Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Height | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB080N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp080n03lg-datasheets-7674.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 47W | 1 | Not Qualified | R-PSSO-G2 | 4.6 ns | 3.6ns | 2.8 ns | 18 ns | 50A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 47W Tc | 48A | 50 mJ | N-Channel | 1900pF @ 15V | 8m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| AOD446 | Alpha & Omega Semiconductor Inc. | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 2.1W | 1 | 10A | 25V | 75V | 2.1W Ta 20W Tc | N-Channel | 350pF @ 30V | 130m Ω @ 5A, 20V | 3V @ 250μA | 10A Tc | 6.5nC @ 10V | 4.5V 20V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB065N15N3GE8187ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb065n15n3gatma1-datasheets-1086.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | PG-TO263-7 | 7.3nF | 130A | 150V | 300W Tc | N-Channel | 7300pF @ 75V | 6.5mOhm @ 100A, 10V | 4V @ 270μA | 130A Tc | 93nC @ 10V | 6.5 mΩ | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB023N06N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb023n06n3gatma1-datasheets-8937.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | yes | EAR99 | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 7 | 40 | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 214W Tc | 140A | 560A | 0.0023Ohm | 330 mJ | N-Channel | 16000pF @ 30V | 2.3m Ω @ 100A, 10V | 4V @ 141μA | 140A Tc | 198nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSP320SL6433HTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp320sl6433htma1-datasheets-8904.pdf | TO-261-4, TO-261AA | 4 | 4 | AVALANCHE RATED | No | DUAL | GULL WING | 1.8W | 1 | 11 ns | 25ns | 35 ns | 25 ns | 2.9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 1.8W Ta | 60 mJ | N-Channel | 340pF @ 25V | 120m Ω @ 2.9A, 10V | 4V @ 20μA | 2.9A Ta | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPB023N04NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb023n04ngatma1-datasheets-8976.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 1 | Not Qualified | R-PSSO-G2 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 167W Tc | 400A | 150 mJ | N-Channel | 10000pF @ 20V | 2.3m Ω @ 90A, 10V | 4V @ 95μA | 90A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSP125L6433HTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/infineontechnologies-bsp125e6433-datasheets-7071.pdf | TO-261-4, TO-261AA | 4 | 4 | LOGIC LEVEL COMPATIBLE | No | DUAL | GULL WING | 1.8W | 1 | 7.7 ns | 14.4ns | 110 ns | 20 ns | 120mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 600V | 600V | 1.8W Ta | N-Channel | 150pF @ 25V | 45 Ω @ 120mA, 10V | 2.3V @ 94μA | 120mA Ta | 6.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDP5500 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp5500f085-datasheets-0177.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 375W Tc | TO-220AB | 0.007Ohm | 860 mJ | N-Channel | 3565pF @ 25V | 7m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 269nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB039N04LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb039n04lgatma1-datasheets-8997.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 94W Tc | 400A | 0.0052Ohm | 60 mJ | N-Channel | 6100pF @ 25V | 3.9m Ω @ 80A, 10V | 2V @ 45μA | 80A Tc | 78nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AON7426 | Alpha & Omega Semiconductor Inc. | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aon7426-datasheets-4109.pdf | 8-PowerVDFN | 16 Weeks | FET General Purpose Power | 18A | Single | 30V | 3.1W Ta 29W Tc | 40A | N-Channel | 2120pF @ 15V | 5.5m Ω @ 18A, 10V | 2.35V @ 250μA | 18A Ta 40A Tc | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP135L6433HTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp135l6327htsa1-datasheets-7013.pdf | TO-261-4, TO-261AA | 4 | No | 1.8W | 1 | PG-SOT223-4 | 146pF | 5.4 ns | 5.6ns | 182 ns | 28 ns | 120mA | 20V | 600V | 1.8W Ta | N-Channel | 146pF @ 25V | 45Ohm @ 120mA, 10V | 1V @ 94μA | 120mA Ta | 4.9nC @ 5V | Depletion Mode | 45 Ω | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AOW480 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aow298-datasheets-0480.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 333W | 1 | TO-262 | 7.82nF | 15A | 25V | 80V | 1.9W Ta 333W Tc | N-Channel | 7820pF @ 40V | 4.5mOhm @ 20A, 10V | 4V @ 250μA | 15A Ta 180A Tc | 140nC @ 10V | 4.5 mΩ | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB075N04LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb075n04lgatma1-datasheets-9023.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 56W | 1 | Not Qualified | R-PSSO-G2 | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 56W Tc | 20 mJ | N-Channel | 2800pF @ 25V | 7.5m Ω @ 50A, 10V | 2V @ 20μA | 50A Tc | 36nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AOL1413 | Alpha & Omega Semiconductor Inc. | $6.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | 3-PowerSMD, Flat Leads | 3 | EAR99 | DUAL | 3 | 1 | Not Qualified | R-PDSO-F3 | 38A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.1W Ta 38W Tc | 70A | 0.036Ohm | P-Channel | 2200pF @ 15V | 17m Ω @ 20A, 10V | 3.5V @ 250μA | 38A Tc | 38nC @ 10V | 5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB052N04NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb052n04ngatma1-datasheets-9027.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 79W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 70A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 79W Tc | 400A | 0.0052Ohm | 35 mJ | N-Channel | 3300pF @ 20V | 5.2m Ω @ 70A, 10V | 4V @ 33μA | 70A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPB072N15N3GE8187ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb072n15n3ge8187atma1-datasheets-9044.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 150V | 300W Tc | N-Channel | 5470pF @ 75V | 7.2m Ω @ 100A, 10V | 4V @ 270μA | 100A Tc | 93nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123L6433HTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss123e6327-datasheets-5104.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | LOGIC LEVEL COMPATIBLE | DUAL | GULL WING | 360mW | 1 | 170mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 360mW Ta | 6Ohm | N-Channel | 69pF @ 25V | 6 Ω @ 170mA, 10V | 1.8V @ 50μA | 170mA Ta | 2.67nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOT12N65 | Alpha & Omega Semiconductor Inc. | $8.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot430-datasheets-0079.pdf | TO-220-3 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 12A | 650V | 278W Tc | N-Channel | 2150pF @ 25V | 720m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT210L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | TO-220-3 | 176W | 1 | FET General Purpose Power | 105A | 20V | Single | 30V | 1.9W Ta 176W Tc | N-Channel | 4300pF @ 15V | 2.9m Ω @ 20A, 10V | 2.2V @ 250μA | 20A Ta 105A Tc | 58nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP083N15A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp083n15af102-datasheets-5278.pdf | TO-220-3 | yes | unknown | NO | FET General Purpose Power | Single | 150V | 294W Tc | 105A | N-Channel | 6040pF @ 25V | 8.3m Ω @ 75A, 10V | 4V @ 250μA | 83A Tc | 84nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC889N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc889n03lsgatma1-datasheets-8713.pdf | 8-PowerTDFN | 5 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | DUAL | FLAT | 2.5W | 1 | R-PDSO-F5 | 2.8 ns | 2.2ns | 2.4 ns | 13 ns | 13A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 28W Tc | 0.009Ohm | N-Channel | 1300pF @ 15V | 9m Ω @ 30A, 10V | 2.2V @ 250μA | 13A Ta 45A Tc | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSO303SPHXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bso303sphxuma1-datasheets-8821.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 17 Weeks | 8 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1.56W | 1 | Not Qualified | 11ns | 7.2A | 20V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 1.56W Ta | 36A | 97 mJ | P-Channel | 2330pF @ 25V | 21m Ω @ 9.1A, 10V | 2V @ 100μA | 7.2A Ta | 54nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSO613SPVGHUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/infineontechnologies-bso613spv-datasheets-7075.pdf | -60V | -3.44A | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 26 Weeks | No SVHC | 8 | yes | EAR99 | AVALANCHE RATED | Tin | PG-SO 8 | e3 | Not Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | 10 ns | 11ns | 32 ns | -3.44A | 20V | -60V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | -3V | 2.5W Ta | -60V | P-Channel | 875pF @ 25V | 130m Ω @ 3.44A, 10V | 4V @ 1mA | 3.44A Ta | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IRLH7134TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irlh7134tr2pbf-datasheets-8701.pdf | 8-PowerTDFN | 5 | 52 Weeks | 8 | EAR99 | No | DUAL | FLAT | 3.6W | 1 | FET General Purpose Power | R-PDSO-F5 | 21 ns | 75ns | 13 ns | 18 ns | 26A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.6W Ta 104W Tc | 640A | 0.0033Ohm | N-Channel | 3720pF @ 25V | 3.3m Ω @ 50A, 10V | 2.5V @ 100μA | 26A Ta 85A Tc | 58nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| BSF077N06NT3GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsf077n06nt3gxuma1-datasheets-8850.pdf | 3-WDSON | 3 | EAR99 | compliant | YES | BOTTOM | NO LEAD | 3 | 1 | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.2W Ta 38W Tc | 13A | 224A | 0.0077Ohm | 150 mJ | N-Channel | 3700pF @ 30V | 7.7m Ω @ 30A, 10V | 4V @ 33μA | 13A Ta 56A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AOTF12N60FD | Alpha & Omega Semiconductor Inc. | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | TO-220-3 Full Pack | 16 Weeks | FET General Purpose Powers | 12A | Single | 600V | 50W Tc | N-Channel | 2010pF @ 25V | 650m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF2N60 | Alpha & Omega Semiconductor Inc. | $20.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aotf7t60pl-datasheets-2991.pdf | TO-220-3 Full Pack | TO-220-3F | 325pF | 2A | 600V | 31W Tc | N-Channel | 325pF @ 25V | 4.4Ohm @ 1A, 10V | 4.5V @ 250μA | 2A Tc | 11.4nC @ 10V | 4.4 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO080P03NS3EGXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bso080p03ns3egxuma1-datasheets-8880.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | 16 ns | 47ns | 19 ns | 64 ns | 12A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1.6W Ta | 149 mJ | P-Channel | 6750pF @ 15V | 8m Ω @ 14.8A, 10V | 3.1V @ 150μA | 12A Ta | 81nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||
| BSP296L6433HTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp296e6327-datasheets-5056.pdf | TO-261-4, TO-261AA | 4 | EAR99 | No | 4 | 1.79W | 1 | 5.2 ns | 7.9ns | 21.4 ns | 37.4 ns | 1.1A | 20V | 100V | 1.79W Ta | N-Channel | 364pF @ 25V | 700m Ω @ 1.1A, 10V | 1.8V @ 400μA | 1.1A Ta | 17.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB022N04LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb022n04lgatma1-datasheets-8896.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 167W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 90A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 167W Tc | 400A | 0.0029Ohm | N-Channel | 13000pF @ 20V | 2.2m Ω @ 90A, 10V | 2V @ 95μA | 90A Tc | 166nC @ 10V | 4.5V 10V | ±20V |
