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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPD60R520C6BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r520c6atma1-datasheets-7565.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 66W Tc | 8.1A | 22A | 0.52Ohm | 153 mJ | N-Channel | 512pF @ 100V | 520m Ω @ 2.8A, 10V | 3.5V @ 230μA | 8.1A Tc | 23.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPD530N15N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd530n15n3gatma1-datasheets-3316.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 68W Tc | 21A | 84A | 0.053Ohm | 60 mJ | N-Channel | 887pF @ 75V | 53m Ω @ 18A, 10V | 4V @ 35μA | 21A Tc | 12nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD90R1K2C3BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd90r1k2c3atma1-datasheets-7966.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 83W Tc | TO-252AA | 5.1A | 10A | 68 mJ | N-Channel | 710pF @ 100V | 1.2 Ω @ 2.8A, 10V | 3.5V @ 310μA | 5.1A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPD042P03L3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd042p03l3gatma1-datasheets-8185.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 150W Tc | 70A | 280A | 0.0068Ohm | 269 mJ | P-Channel | 12400pF @ 15V | 4.2m Ω @ 70A, 10V | 2V @ 270μA | 70A Tc | 175nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPB65R190C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-ipa65r190c6xksa1-datasheets-9912.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 151W Tc | 66A | 0.19Ohm | 485 mJ | N-Channel | 1620pF @ 100V | 190m Ω @ 7.3A, 10V | 3.5V @ 730μA | 20.2A Tc | 73nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD068P03L3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd068p03l3gatma1-datasheets-8979.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 100W Tc | 70A | 280A | 0.0068Ohm | 149 mJ | P-Channel | 7720pF @ 15V | 6.8m Ω @ 70A, 10V | 2V @ 150μA | 70A Tc | 91nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPB136N08N3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi139n08n3ghksa1-datasheets-4312.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 79W Tc | 45A | 180A | 0.0136Ohm | 50 mJ | N-Channel | 1730pF @ 40V | 13.6m Ω @ 45A, 10V | 3.5V @ 33μA | 45A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPD122N10N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd122n10n3gbtma1-datasheets-9288.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 94W Tc | TO-252AA | 59A | 236A | 0.0122Ohm | 70 mJ | N-Channel | 2500pF @ 50V | 12.2m Ω @ 46A, 10V | 3.5V @ 46μA | 59A Tc | 35nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPD038N04NGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd038n04ngbtma1-datasheets-9308.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 94W | 1 | Not Qualified | R-PSSO-G2 | 90A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 94W Tc | TO-252AA | 400A | 0.0038Ohm | 55 mJ | N-Channel | 4500pF @ 20V | 3.8m Ω @ 90A, 10V | 4V @ 45μA | 90A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IPB049N06L3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb049n06l3gatma1-datasheets-9321.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 115W Tc | 80A | 320A | 0.0047Ohm | 77 mJ | N-Channel | 8400pF @ 30V | 4.7m Ω @ 80A, 10V | 2.2V @ 58μA | 80A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPB65R660CFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp65r660cfdxksa1-datasheets-9968.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | no | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 9 ns | 8ns | 10 ns | 40 ns | 6A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | 6A | 17A | 0.66Ohm | 115 mJ | N-Channel | 615pF @ 100V | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 6A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| AOTF474 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aotf472-datasheets-8644.pdf | TO-220-3 Full Pack | TO-220FL | 3.37nF | 47A | 75V | 1.9W Ta 57.5W Tc | N-Channel | 3370pF @ 30V | 11.3mOhm @ 30A, 10V | 4V @ 250μA | 9A Ta 47A Tc | 60nC @ 10V | 11.3 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R520CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r520cpatma1-datasheets-9205.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 66W Tc | 6.8A | 17A | 0.52Ohm | 166 mJ | N-Channel | 630pF @ 100V | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 6.8A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD180N10N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd180n10n3gatma1-datasheets-5168.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 71W Tc | TO-252AA | 43A | 172A | 0.018Ohm | 50 mJ | N-Channel | 1800pF @ 50V | 18m Ω @ 33A, 10V | 3.5V @ 33μA | 43A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPD60R520CPBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd60r520cpbtma1-datasheets-9393.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | No | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 66W | 1 | R-PSSO-G2 | 17 ns | 12ns | 16 ns | 74 ns | 6.8A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 66W Tc | TO-252AA | 0.52Ohm | N-Channel | 630pF @ 100V | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 6.8A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPB65R420CFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-ipp65r420cfdxksa1-datasheets-7631.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | No SVHC | 3 | no | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 83.3W | 1 | R-PSSO-G2 | 10 ns | 7ns | 8 ns | 38 ns | 8.7A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 4V | 83.3W Tc | 27A | 0.42Ohm | 227 mJ | N-Channel | 870pF @ 100V | 420m Ω @ 3.4A, 10V | 4.5V @ 340μA | 8.7A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IPB093N04LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb093n04lgatma1-datasheets-9142.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 47W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 47W Tc | 46A | 0.0093Ohm | N-Channel | 2100pF @ 20V | 9.3m Ω @ 50A, 10V | 2V @ 16μA | 50A Tc | 28nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPB60R950C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipb60r950c6atma1-datasheets-9210.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | No SVHC | 2 | no | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 37W | 1 | Not Qualified | 10 ns | 8ns | 13 ns | 60 ns | 4.4A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 37W Tc | 0.95Ohm | 46 mJ | N-Channel | 280pF @ 100V | 950m Ω @ 1.5A, 10V | 3.5V @ 130μA | 4.4A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IPB65R600C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipa65r600c6xksa1-datasheets-0025.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 63W Tc | 18A | 0.6Ohm | 142 mJ | N-Channel | 440pF @ 100V | 600m Ω @ 2.1A, 10V | 3.5V @ 210μA | 7.3A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AOTF8N60 | Alpha & Omega Semiconductor Inc. | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aotf7t60pl-datasheets-2991.pdf | TO-220-3 Full Pack | unknown | FET General Purpose Powers | 8A | Single | 600V | 50W Tc | 8A | N-Channel | 1370pF @ 25V | 900m Ω @ 4A, 10V | 4.5V @ 250μA | 8A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R299CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | /files/infineontechnologies-ipb60r299cpatma1-datasheets-9111.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 13 Weeks | 3 | no | EAR99 | No | Halogen Free | 4 | 96W | 1 | 10 ns | 5ns | 40 ns | 11A | 20V | 600V | 96W Tc | N-Channel | 1100pF @ 100V | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 11A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSC889N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc889n03msgatma1-datasheets-8858.pdf | 8-PowerTDFN | 5 | 8 | EAR99 | No | DUAL | 2.5W | 1 | R-PDSO-N5 | 7.7 ns | 4.2ns | 5 ns | 7.2 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 28W Tc | N-Channel | 1500pF @ 15V | 9.1m Ω @ 30A, 10V | 2V @ 250μA | 12A Ta 44A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI5429DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5429dut1ge3-datasheets-8656.pdf | PowerPAK® ChipFET™ Dual | 3.08mm | 850μm | 1.98mm | No SVHC | 8 | EAR99 | No | 31W | Single | 31W | 1 | 35 ns | 50ns | 20 ns | 60 ns | 12A | 20V | 30V | -1V | -30V | P-Channel | 2320pF @ 15V | 15m Ω @ 7A, 10V | 2.2V @ 250μA | 12A Tc | 63nC @ 10V | |||||||||||||||||||||||||||||||||||||||||
| IPB097N08N3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp100n08n3gxksa1-datasheets-0887.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 100W Tc | 70A | 280A | 0.0097Ohm | 90 mJ | N-Channel | 2410pF @ 40V | 9.7m Ω @ 46A, 10V | 3.5V @ 46μA | 70A Tc | 35nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPB60R600C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r600c6atma1-datasheets-9137.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 63W Tc | 7.3A | 19A | 0.6Ohm | 133 mJ | N-Channel | 440pF @ 100V | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 7.3A Tc | 20.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPB041N04NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb041n04ngatma1-datasheets-8933.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 94W Tc | 80A | 400A | 0.0041Ohm | 60 mJ | N-Channel | 4500pF @ 20V | 4.1m Ω @ 80A, 10V | 4V @ 45μA | 80A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPB60R385CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineontechnologies-ipb60r385cpatma1-datasheets-9154.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 3 | no | EAR99 | Halogen Free | 4 | Single | 83W | 10 ns | 5ns | 5 ns | 40 ns | 9A | 20V | 600V | 3V | 83W Tc | 650V | N-Channel | 790pF @ 100V | 3 V | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 9A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AOI1N60L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -50°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -50°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-251-3 Stub Leads, IPak | TO-251A | 160pF | 1.3A | 600V | 45W Tc | N-Channel | 160pF @ 25V | 9Ohm @ 650mA, 10V | 4.5V @ 250μA | 1.3A Tc | 8nC @ 10V | 9 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB230N06L3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp230n06l3g-datasheets-7708.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 36W | 1 | Not Qualified | R-PSSO-G2 | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 36W Tc | 0.023Ohm | N-Channel | 1600pF @ 30V | 23m Ω @ 30A, 10V | 2.2V @ 11μA | 30A Tc | 10nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPB65R380C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r380c6atma1-datasheets-9180.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 83W Tc | 10.6A | 29A | 0.38Ohm | 215 mJ | N-Channel | 710pF @ 100V | 380m Ω @ 3.2A, 10V | 3.5V @ 320μA | 10.6A Tc | 39nC @ 10V | 10V | ±20V |
