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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUM110N03-04P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0304pe3-datasheets-9890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 12ns | 10 ns | 40 ns | 110A | 20V | SILICON | SWITCHING | 1V | 3.75W Ta 120W Tc | 0.0042Ohm | 30V | N-Channel | 5100pF @ 25V | 4.2m Ω @ 20A, 10V | 3V @ 250μA | 110A Tc | 60nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTMFS4833NST3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SENSEFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4833nst3g-datasheets-9702.pdf | 8-PowerTDFN | Lead Free | 8 | 8 | CONSULT SALES OFFICE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 2.31W | 1 | FET General Purpose Power | 21 ns | 60ns | 44 ns | 37 ns | 26A | 20V | SILICON | SWITCHING | 900mW Ta 86.2W Tc | 16A | 30V | N-Channel | 5250pF @ 12V | 2.2m Ω @ 30A, 10V | 2.5V @ 250μA | 16A Ta 156A Tc | 86nC @ 11.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTMFS4833NST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SENSEFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4833nst3g-datasheets-9702.pdf | 8-PowerTDFN | Lead Free | 8 | 8 | CONSULT SALES OFFICE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 2.31W | 1 | FET General Purpose Power | 21 ns | 60ns | 44 ns | 37 ns | 26A | 20V | SILICON | SWITCHING | 900mW Ta 86.2W Tc | 16A | 30V | N-Channel | 5250pF @ 12V | 2.2m Ω @ 30A, 10V | 2.5V @ 250μA | 16A Ta 156A Tc | 86nC @ 11.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTMFS4936NCT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4936nt1g-datasheets-9016.pdf | 8-PowerTDFN, 5 Leads | 5 | 38 Weeks | 5 | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 2.62W | 1 | FET General Purpose Power | 10.4 ns | 19ns | 8 ns | 29 ns | 19.5A | 20V | SILICON | DRAIN | SWITCHING | 920mW Ta 43W Tc | 11.6A | 0.0048Ohm | 96.8 mJ | 30V | N-Channel | 3044pF @ 15V | 3.8m Ω @ 30A, 10V | 2.2V @ 250μA | 11.6A Ta 79A Tc | 43nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SUD17N25-165-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud17n25165e3-datasheets-9722.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 16 Weeks | 1.437803g | 165mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 3W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 130ns | 100 ns | 30 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 3W Ta 136W Tc | 20A | N-Channel | 1950pF @ 25V | 165m Ω @ 14A, 10V | 4V @ 250μA | 17A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTP5860NLG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/onsemiconductor-ntp5860ng-datasheets-3459.pdf | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 283W | 1 | FET General Purpose Power | 25 ns | 58ns | 144 ns | 98 ns | 220A | 20V | SILICON | DRAIN | SWITCHING | 283W Tc | TO-220AB | 660A | 60V | N-Channel | 10760pF @ 25V | 3m Ω @ 75A, 10V | 4V @ 250μA | 220A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTMFS4854NST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SENSEFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4854nst1g-datasheets-9741.pdf | 8-PowerTDFN | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 2.31W | 1 | FET General Purpose Power | 20 ns | 54ns | 45 ns | 38 ns | 24.4A | 16V | SILICON | SWITCHING | 900mW Ta 86.2W Tc | 15.2A | 25V | N-Channel | 4830pF @ 12V | 2.5m Ω @ 15A, 10V | 2.5V @ 250μA | 15.2A Ta 149A Tc | 85nC @ 11.5V | 3.2V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| AOC2411 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aoc2411-datasheets-4191.pdf | 4-UFBGA, WLCSP | 3.4A | 30V | 800mW Ta | P-Channel | 1630pF @ 15V | 45m Ω @ 1A, 4.5V | 1.4V @ 250μA | 3.4A Ta | 20nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA850DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia850djt1ge3-datasheets-9719.pdf | PowerPAK® SC-70-6 Dual | 6 | 6 | yes | EAR99 | No | e3 | MATTE TIN | C BEND | 260 | 6 | 40 | 7W | 1 | FET General Purpose Power | 10 ns | 15ns | 15 ns | 25 ns | 950mA | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.9W Ta 7W Tc | 0.95A | 190V | N-Channel | 90pF @ 100V | 3.8 Ω @ 360mA, 4.5V | 1.4V @ 250μA | 950mA Tc | 4.5nC @ 10V | Schottky Diode (Isolated) | 1.8V 4.5V | ±16V | |||||||||||||||||||||||||||||||||||||||
| NTMFS4936NCT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfs4936nt1g-datasheets-9016.pdf | 8-PowerTDFN, 5 Leads | 5 | 38 Weeks | 5 | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 2.62W | 1 | FET General Purpose Power | 10.4 ns | 19ns | 8 ns | 29 ns | 19.5A | 20V | SILICON | DRAIN | SWITCHING | 920mW Ta 43W Tc | 11.6A | 0.0048Ohm | 96.8 mJ | 30V | N-Channel | 3044pF @ 15V | 3.8m Ω @ 30A, 10V | 2.2V @ 250μA | 11.6A Ta 79A Tc | 43nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSR302NL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bsr302nl6327htsa1-datasheets-9756.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 12 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | 8541.21.00.95 | e3 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 3.2ns | 3.7A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | 500mW Ta | N-Channel | 750pF @ 15V | 23m Ω @ 3.7A, 10V | 2V @ 30μA | 3.7A Ta | 6.6nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSS7728NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss7728nh6327xtsa1-datasheets-9686.pdf | TO-236-3, SC-59, SOT-23-3 | 8 Weeks | 3 | 360mW | 1 | SOT-23-3 | 56pF | 2.7 ns | 9 ns | 6.1 ns | 200mA | 20V | 60V | 360mW Ta | N-Channel | 56pF @ 25V | 5Ohm @ 500mA, 10V | 2.3V @ 26μA | 200mA Ta | 1.5nC @ 10V | 5 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB408DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib408dkt1ge3-datasheets-9779.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | Lead Free | 3 | 15 Weeks | 95.991485mg | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | 40 | 2.4W | 1 | FET General Purpose Power | R-PDSO-N3 | 13 ns | 11ns | 9 ns | 13 ns | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 6A | 20A | 0.04Ohm | 5 mJ | 30V | N-Channel | 350pF @ 15V | 40m Ω @ 6A, 10V | 2.5V @ 250μA | 7A Tc | 9.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SI1406DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1406dht1ge3-datasheets-1976.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | Unknown | 65mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | Single | 40 | 1W | 1 | FET General Purpose Powers | 155pF | 27 ns | 47ns | 29 ns | 54 ns | 3.1A | 8V | SILICON | SWITCHING | 450mV | 1W Ta | 20V | N-Channel | 450 mV | 65m Ω @ 3.9A, 4.5V | 1.2V @ 250μA | 3.1A Ta | 7.5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SIHB22N60S-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb22n60se3-datasheets-9796.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | Unknown | 190mOhm | 3 | yes | No | GULL WING | 260 | 4 | Single | 40 | 250W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 68ns | 59 ns | 77 ns | 22A | 20V | DRAIN | SWITCHING | 2V | 250W Tc | 65A | 690 mJ | 600V | N-Channel | 2810pF @ 25V | 190m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SN7002NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1996 | /files/infineontechnologies-sn7002nh6327xtsa2-datasheets-5536.pdf | TO-236-3, SC-59, SOT-23-3 | 70 Weeks | 3 | 360mW | 1 | SOT-23-3 | 45pF | 2.4 ns | 3.2ns | 3.6 ns | 5.3 ns | 200mA | 20V | 60V | 360mW Ta | N-Channel | 45pF @ 25V | 5Ohm @ 500mA, 10V | 1.8V @ 26μA | 200mA Ta | 1.5nC @ 10V | 5 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4979NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4979n35g-datasheets-4129.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | e3 | Tin (Sn) | GULL WING | Single | 2.56W | 1 | FET General Purpose Power | R-PSSO-G2 | 41A | SILICON | DRAIN | SWITCHING | 1.38W Ta 26.3W Tc | 9.4A | 150A | 0.019Ohm | 18 mJ | 30V | N-Channel | 837pF @ 15V | 9m Ω @ 30A, 10V | 2.5V @ 250μA | 9.4A Ta 41A Tc | 16.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOU1N60 | Alpha & Omega Semiconductor Inc. | $14.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -50°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -50°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-251-3 Short Leads, IPak, TO-251AA | 16 Weeks | 3 | No | 45W | 1 | TO-251-3 | 160pF | 1.3A | 30V | 600V | 45W Tc | N-Channel | 160pF @ 25V | 9Ohm @ 650mA, 10V | 4.5V @ 250μA | 1.3A Tc | 8nC @ 10V | 9 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB260N06N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp260n06n3gxksa1-datasheets-7741.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 36W Tc | 27A | 108A | 0.0257Ohm | 13 mJ | N-Channel | 1200pF @ 30V | 25.7m Ω @ 27A, 10V | 4V @ 11μA | 27A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSP299L6327HUSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp299e6327-datasheets-7024.pdf | TO-261-4, TO-261AA | 4 | No | 1.8W | 1 | PG-SOT223-4 | 400pF | 8 ns | 15ns | 30 ns | 55 ns | 400mA | 20V | 500V | 1.8W Ta | N-Channel | 400pF @ 25V | 4Ohm @ 400mA, 10V | 4V @ 1mA | 400mA Ta | 4 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD50N03S207GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd50n03s207gbtma1-datasheets-9501.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 136W Tc | TO-252AA | 50A | 200A | 0.0073Ohm | 250 mJ | N-Channel | 2170pF @ 25V | 7.3m Ω @ 50A, 10V | 4V @ 85μA | 50A Tc | 46.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSB012N03LX3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsb012n03lx3g-datasheets-9470.pdf | 3-WDSON | 3 | yes | EAR99 | compliant | 8541.29.00.95 | e3 | MATTE TIN | YES | BOTTOM | NO LEAD | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 89W Tc | 39A | 400A | 0.0012Ohm | 290 mJ | N-Channel | 16900pF @ 15V | 1.2m Ω @ 30A, 10V | 2.2V @ 250μA | 39A Ta 180A Tc | 169nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFR825PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfr825pbf-datasheets-9592.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 119W | 1 | FET General Purpose Power | 8.5 ns | 25ns | 20 ns | 30 ns | 6A | 20V | 3V | 119W Tc | 138 ns | 6A | 500V | N-Channel | 1346pF @ 25V | 1.3 Ω @ 3.7A, 10V | 5V @ 250μA | 6A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPD30N03S2L20GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd30n03s2l20gbtma1-datasheets-9604.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED | compliant | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 60W Tc | 30A | 120A | 0.031Ohm | 70 mJ | N-Channel | 700pF @ 25V | 20m Ω @ 18A, 10V | 2V @ 23μA | 30A Tc | 19nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSF050N03LQ3GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsf050n03lq3gxuma1-datasheets-9588.pdf | 3-WDSON | 2 | yes | EAR99 | compliant | 8541.29.00.95 | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | Not Qualified | R-MBCC-N2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.2W Ta 28W Tc | 15A | 240A | 0.007Ohm | 20 mJ | N-Channel | 3000pF @ 15V | 5m Ω @ 20A, 10V | 2.2V @ 250μA | 15A Ta 60A Tc | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSB012NE2LX | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-bsb012ne2lx-datasheets-9608.pdf | 3-WDSON | 2 | 7 | yes | EAR99 | No | 8541.29.00.95 | Halogen Free | YES | BOTTOM | 2 | 1 | FET General Purpose Power | R-MBCC-N2 | 5.7 ns | 6ns | 4.6 ns | 34 ns | 56A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2.8W Ta 57W Tc | 39A | 400A | 0.0012Ohm | 285 mJ | N-Channel | 4900pF @ 12V | 1.2m Ω @ 30A, 10V | 2V @ 250μA | 37A Ta 170A Tc | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSS169L6906HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss169l6327htsa1-datasheets-3767.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | EAR99 | Tin | DUAL | GULL WING | 1 | 2.7ns | 170mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 360mW Ta | 0.17A | 6Ohm | 7 pF | N-Channel | 68pF @ 25V | 6 Ω @ 170mA, 10V | 1.8V @ 50μA | 170mA Ta | 2.8nC @ 7V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPD053N06N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd053n06n3gbtma1-datasheets-9356.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 115W Tc | TO-252AA | 90A | 360A | 0.0053Ohm | 68 mJ | N-Channel | 6600pF @ 30V | 5.3m Ω @ 90A, 10V | 4V @ 58μA | 90A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSP324L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-bsp324e6327-datasheets-7067.pdf | TO-261-4, TO-261AA | 4 | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | No | DUAL | GULL WING | 4 | 1.8W | 1 | 4.6 ns | 68 ns | 17 ns | 170mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 400V | 1.8W Ta | 0.68A | N-Channel | 154pF @ 25V | 25 Ω @ 170mA, 10V | 2.3V @ 94μA | 170mA Ta | 5.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R380E6BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd65r380e6atma1-datasheets-2896.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 83W Tc | TO-252AA | 29A | 0.38Ohm | 215 mJ | N-Channel | 710pF @ 100V | 380m Ω @ 3.2A, 10V | 3.5V @ 320μA | 10.6A Tc | 39nC @ 10V | 10V | ±20V |
