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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQD30N06TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd30n06tm-datasheets-1098.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 11 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 22.7A | 25V | SILICON | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta 44W Tc | 90.8A | 0.045Ohm | 280 mJ | N-Channel | 945pF @ 25V | 45m Ω @ 11.4A, 10V | 4V @ 250μA | 22.7A Tc | 25nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4983NFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfs4983nft3g-datasheets-8423.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 5 | 1 | Single | 1 | FET General Purpose Power | 13.5 ns | 24.9ns | 10.7 ns | 28.7 ns | 106A | 20V | SILICON | DRAIN | SWITCHING | 1.7W Ta | 22A | 320A | 30V | N-Channel | 3250pF @ 15V | 2.1m Ω @ 30A, 10V | 2.3V @ 1mA | 22A Ta 106A Tc | 47.9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STD16NF06T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std16nf06t4-datasheets-1085.pdf | 60V | 16A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 70MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | STD16 | 3 | Single | 30 | 40W | 1 | FET General Purpose Power | R-PSSO-G2 | 4 ns | 15ns | 5.5 ns | 16 ns | 16A | 20V | SILICON | DRAIN | AMPLIFIER | 2V | 40W Tc | 64A | 60V | N-Channel | 400pF @ 15V | 70m Ω @ 8A, 10V | 2V @ 250μA | 16A Tc | 14.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BUK9Y3R5-40E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y3r540e115-datasheets-1167.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | 1 | Single | 1 | 20.2 ns | 36.8ns | 29.5 ns | 43.2 ns | 100A | 15V | 40V | SILICON | DRAIN | SWITCHING | 167W Tc | MO-235 | 0.0038Ohm | N-Channel | 5137pF @ 25V | 3.6m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 30.2nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7240-100A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk7240100a118-datasheets-0469.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 26 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 114W | 1 | R-PSSO-G2 | 12 ns | 55ns | 30 ns | 48 ns | 34A | 20V | 100V | SILICON | DRAIN | SWITCHING | 114W Tc | 0.04Ohm | 122.5 mJ | 100V | N-Channel | 2293pF @ 25V | 40m Ω @ 25A, 10V | 4V @ 1mA | 34A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R5-30YL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn1r530yl115-datasheets-1178.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 109W | 1 | 46 ns | 72ns | 34 ns | 76 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 109W Tc | MO-235 | 790A | 0.0019Ohm | 30V | N-Channel | 5057pF @ 12V | 1.5m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 77.9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0902NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc0902nsatma1-datasheets-0648.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 4.2 ns | 5.2ns | 3.6 ns | 21 ns | 24A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 48W Tc | 400A | 0.0035Ohm | 40 mJ | N-Channel | 1700pF @ 15V | 2.6m Ω @ 30A, 10V | 2.2V @ 250μA | 24A Ta 100A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FQD5N60CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqu5n60ctu-datasheets-4452.pdf | 600V | 5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 7 Weeks | 260.37mg | No SVHC | 2.5Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 42ns | 46 ns | 38 ns | 2.8A | 30V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 49W Tc | 600V | N-Channel | 670pF @ 25V | 2.5 Ω @ 1.4A, 10V | 4V @ 250μA | 2.8A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| RQ3C150BCTB | ROHM Semiconductor | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 5 | 20 Weeks | EAR99 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 20W Tc | 15A | 60A | 0.0085Ohm | 33 mJ | P-Channel | 4800pF @ 10V | 6.7m Ω @ 15A, 4.5V | 1.2V @ 1mA | 30A Tc | 60nC @ 4.5V | 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD088N06N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd088n06n3gbtma1-datasheets-0934.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | No SVHC | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Not Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 71W | 1 | Not Qualified | R-PSSO-G2 | 15 ns | 40ns | 5 ns | 20 ns | 50A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 71W Tc | TO-252AA | 200A | 0.0088Ohm | N-Channel | 3900pF @ 30V | 8.8m Ω @ 50A, 10V | 4V @ 34μA | 50A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIJA58DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sija58dpt1ge3-datasheets-0836.pdf | PowerPAK® SO-8 | 1.267mm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 4.1W | 175°C | 10 ns | 28 ns | 29.3A | 27.7W Tc | 40V | N-Channel | 3750pF @ 20V | 2.65m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 75nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ858AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj858aept1ge3-datasheets-1015.pdf | PowerPAK® SO-8 | Lead Free | 12 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | 48W | 1 | PowerPAK® SO-8 | 2.45nF | 10 ns | 9ns | 8 ns | 26 ns | 58A | 20V | 40V | 2V | 48W Tc | 6.3mOhm | 40V | N-Channel | 2450pF @ 20V | 6.3mOhm @ 14A, 10V | 2.5V @ 250μA | 58A Tc | 55nC @ 10V | 6.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R400CEAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipd65r400ceauma1-datasheets-0828.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 15.1A | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 118W Tc | 0.4Ohm | 215 mJ | N-Channel | 710pF @ 100V | 400m Ω @ 3.2A, 10V | 3.5V @ 320μA | 15.1A Tc | 39nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R0-30YL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn2r030yl115-datasheets-1062.pdf | SC-100, SOT-669 | 4 | 12 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 30 | 1 | Not Qualified | R-PSSO-G4 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 97W Tc | MO-235 | 667A | 0.0032Ohm | 151 mJ | N-Channel | 3980pF @ 12V | 2m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 64nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3R203NL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tph3r203nll1q-datasheets-1068.pdf | 8-PowerVDFN | 5 | 12 Weeks | 850.995985mg | 8 | EAR99 | No | DUAL | FLAT | 1 | Single | 1 | S-PDSO-F5 | 24 ns | 4.4ns | 5.7 ns | 11.5 ns | 47A | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta 44W Tc | 60A | 200A | 0.0047Ohm | 94 mJ | 30V | N-Channel | 2100pF @ 15V | 3.2m Ω @ 23.5A, 10V | 2.3V @ 300μA | 47A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC7660 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdmc7660-datasheets-1106.pdf | 8-PowerTDFN | 3.3mm | 1.05mm | 3.3mm | Lead Free | 5 | 10 Weeks | 32.13mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 2.3W | 1 | FET General Purpose Power | Not Qualified | S-PDSO-N5 | 14 ns | 6.8ns | 5.7 ns | 36 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 2.3W Ta 41W Tc | MO-240BA | 200A | 0.0022Ohm | 200 mJ | 30V | N-Channel | 4830pF @ 15V | 1.7 V | 2.2m Ω @ 20A, 10V | 2.5V @ 250μA | 20A Ta 40A Tc | 86nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BUK9219-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk921955a118-datasheets-0733.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 26 Weeks | 3 | EAR99 | Tin | not_compliant | 8541.29.00.75 | e3 | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 114W | 1 | Not Qualified | R-PSSO-G2 | 45 ns | 130ns | 130 ns | 400 ns | 55A | 10V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 114W Tc | 219A | 0.02Ohm | 120 mJ | 55V | N-Channel | 2920pF @ 25V | 17.6m Ω @ 25A, 10V | 2V @ 1mA | 55A Tc | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R2-60YLX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn5r260ylx-datasheets-0832.pdf | SC-100, SOT-669 | 4 | 12 Weeks | AVALANCHE RATED | IEC-60134 | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G4 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 195W Tc | MO-235 | 479A | 0.006Ohm | 127 mJ | N-Channel | 6319pF @ 25V | 5.2m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 39.4nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8622 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms8622-datasheets-0242.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 8 Weeks | 74mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | DUAL | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-N5 | 5.7 ns | 1.7ns | 2.1 ns | 10.2 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 31W Tc | MO-240AA | 30A | 0.056Ohm | 100V | N-Channel | 400pF @ 50V | 56m Ω @ 4.8A, 10V | 4V @ 250μA | 4.8A Ta 16.5A Tc | 7nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPN2R703NL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tpn2r703nll1q-datasheets-0917.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 1 | Single | 8-TSON Advance (3.3x3.3) | 2.1nF | 11.5 ns | 4.4ns | 5.7 ns | 24 ns | 45A | 20V | 30V | 700mW Ta 42W Tc | 3.3mOhm | N-Channel | 2100pF @ 15V | 2.7mOhm @ 22.5A, 10V | 2.3V @ 300μA | 45A Tc | 21nC @ 10V | 2.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC7672S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmc7672sf126-datasheets-6605.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 23 Weeks | 200mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | Gold | No | e4 | DUAL | Single | 36W | 1 | FET General Purpose Power | S-PDSO-N5 | 11 ns | 4ns | 3 ns | 26 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 1.6V | 2.3W Ta 36W Tc | 45A | 0.006Ohm | 60 mJ | 30V | N-Channel | 2520pF @ 15V | 1.6 V | 6m Ω @ 14.8A, 10V | 3V @ 1mA | 14.8A Ta 18A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPD80R2K8CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipu80r2k8cebkma1-datasheets-7230.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | 3.949996g | 3 | 1 | Single | PG-TO252-3 | 290pF | 25 ns | 15ns | 18 ns | 72 ns | 1.9A | 30V | 800V | 800V | 42W Tc | 2.4Ohm | N-Channel | 290pF @ 100V | 2.8Ohm @ 1.1A, 10V | 3.9V @ 120μA | 1.9A Tc | 12nC @ 10V | 2.8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ40N04S55R4ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipz40n04s55r4atma1-datasheets-0681.pdf | 8-PowerVDFN | Contains Lead | 3 | 16 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-N3 | 40A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W Tc | 160A | 0.0063Ohm | 53 mJ | N-Channel | 1300pF @ 25V | 5.4m Ω @ 20A, 10V | 3.4V @ 17μA | 40A Tc | 23nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y07-30B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk9y0730b115-datasheets-0702.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 105W | 1 | 25.9 ns | 64.5ns | 64.8 ns | 82.3 ns | 75A | 15V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 105W Tc | MO-235 | 356A | 0.008Ohm | N-Channel | 2500pF @ 25V | 6m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 28.1nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ3E180AJTB | ROHM Semiconductor | $0.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-PowerVDFN | 5 | 10 Weeks | 8 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Ta 30W Tc | 72A | 24.6 mJ | N-Channel | 4290pF @ 15V | 4.5m Ω @ 18A, 4.5V | 1.5V @ 11mA | 18A Ta 30A Tc | 39nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y4R4-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y4r440ex-datasheets-0639.pdf | 19.304mm | SC-100, SOT-669 | 15.875mm | Black | Lead Free | Brass, Plastic | 4 | 12 Weeks | 4 | AVALANCHE RATED | Tin | YES | GULL WING | 4 | Single | 147W | 1 | 10 ns | 18ns | 18 ns | 25 ns | 100A | 20V | 40V | DRAIN | SWITCHING | 24 AWG | 20 AWG | 147W Tc | MO-235 | Gold, Tin | N-Channel | 2781pF @ 25V | 4.4m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMT6009LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmt6009lss13-datasheets-0768.pdf | 8-SOIC (0.154, 3.90mm Width) | 23 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 10.8A | 60V | 1.25W Ta | N-Channel | 1925pF @ 30V | 9.5m Ω @ 13.5A, 10V | 2V @ 250μA | 10.8A Ta | 33.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70N03S4L04ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd70n03s4l04atma1-datasheets-0776.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 3 ns | 2ns | 12 ns | 30A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W Tc | 70A | 280A | 57 mJ | N-Channel | 3300pF @ 25V | 4.3m Ω @ 70A, 10V | 2.2V @ 30μA | 70A Tc | 48nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R0-30YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn2r030yldx-datasheets-0813.pdf | SC-100, SOT-669 | 4 | 12 Weeks | HIGH RELIABILITY | IEC-60134 | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G4 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 142W Tc | MO-235 | 793A | 0.0025Ohm | 397 mJ | N-Channel | 2969pF @ 15V | 2m Ω @ 25A, 10V | 2.2V @ 1mA | 100A Tc | 46nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS6H850NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-nvtfs6h850ntag-datasheets-0730.pdf | 8-PowerWDFN | 5 | 18 Weeks | ACTIVE (Last Updated: 5 hours ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 3.2W Ta 107W Tc | 11A | 300A | 0.0095Ohm | 271 mJ | N-Channel | 1140pF @ 40V | 9.5m Ω @ 10A, 10V | 4V @ 70μA | 11A Ta 68A Tc | 19nC @ 10V | 10V | ±20V |
