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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPD096N08N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd096n08n3gbtma1-datasheets-4034.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | yes | EAR99 | Halogen Free | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100W Tc | 73A | 292A | 0.0096Ohm | 90 mJ | N-Channel | 2410pF @ 40V | 9.6m Ω @ 46A, 10V | 3.5V @ 46μA | 73A Tc | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STS11NF30L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sts11nf30l-datasheets-1397.pdf | 30V | 11A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.25mm | 4mm | Lead Free | 8 | No SVHC | 8 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | STS11 | 8 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 22 ns | 39ns | 16 ns | 23 ns | 11A | 18V | SILICON | SWITCHING | 1V | 2.5W Tc | 44A | 30V | N-Channel | 1440pF @ 25V | 10.5m Ω @ 5.5A, 10V | 1V @ 250μA | 11A Tc | 30nC @ 5V | 5V 10V | ±18V | |||||||||||||||||||||||||||||||
| STD6NK50ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 500V | 5.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 1.2Ohm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD6N | 3 | Single | 30 | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 23.5ns | 23 ns | 31 ns | 5.6A | 30V | SILICON | SWITCHING | 3.75V | 90W Tc | 22.4A | 500V | N-Channel | 690pF @ 25V | 3.75 V | 1.2 Ω @ 2.8A, 10V | 4.5V @ 50μA | 5.6A Tc | 24.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| FDS8842NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds8842nz-datasheets-1550.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 9 Weeks | 130mg | 7MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 13 ns | 7ns | 5 ns | 34 ns | 14.9A | 20V | SILICON | SWITCHING | 2.5W Ta | 330 pF | 40V | N-Channel | 3845pF @ 15V | 7m Ω @ 14.9A, 10V | 3V @ 250μA | 14.9A Ta | 73nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FCD4N60TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcd4n60tf-datasheets-6786.pdf | 600V | 3.9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.517mm | 6.22mm | Lead Free | 2 | 13 Weeks | 260.37mg | No SVHC | 1.2Ohm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | GULL WING | FCD4N60 | 1 | Single | 50W | 1 | FET General Purpose Power | 150°C | R-PSSO-G2 | 16 ns | 45ns | 30 ns | 36 ns | 3.9A | 30V | 600V | SILICON | DRAIN | SWITCHING | 5V | 50W Tc | 600V | N-Channel | 540pF @ 25V | 5 V | 1.2 Ω @ 2A, 10V | 5V @ 250μA | 3.9A Tc | 16.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| 2N7008-G | Microchip Technology | $0.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microchiptechnology-2n7008g-datasheets-1600.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | Lead Free | 3 | 16 Weeks | 453.59237mg | 3 | EAR99 | Tin | No | e3 | BOTTOM | WIRE | 1 | Single | 1W | 1 | FET General Purpose Power | 20 ns | 20 ns | 230mA | 30V | SILICON | SWITCHING | 1W Tc | 5 pF | 60V | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 230mA Tj | 5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| BUK9Y15-100E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk9y15100e115-datasheets-1584.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | 1 | Single | 1 | 21 ns | 32ns | 59 ns | 85 ns | 69A | 15V | 100V | SILICON | DRAIN | SWITCHING | 195W Tc | MO-235 | 100V | N-Channel | 6139pF @ 25V | 14.7m Ω @ 20A, 10V | 2.1V @ 1mA | 69A Tc | 45.8nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| TK560P65Y,RQ | Toshiba Semiconductor and Storage | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk560p65yrq-datasheets-1568.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | DPAK | 650V | 60W Tc | N-Channel | 380pF @ 300V | 560mOhm @ 3.5A, 10V | 4V @ 240μA | 7A Tc | 14.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD6670A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fdd6670a-datasheets-1466.pdf | 30V | 66A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Contains Lead | 2 | 10 Weeks | 260.37mg | No SVHC | 8MOhm | 3 | ACTIVE (Last Updated: 16 hours ago) | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | GULL WING | Single | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 12ns | 19 ns | 29 ns | 66A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.8V | 3.2W Ta 63W Tc | 67 mJ | 30V | N-Channel | 1755pF @ 15V | 1.8 V | 8m Ω @ 15A, 10V | 3V @ 250μA | 15A Ta 66A Tc | 22nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| IPN80R900P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn80r900p7atma1-datasheets-1621.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 7W Tc | 0.9Ohm | N-Channel | 350pF @ 500V | 900m Ω @ 2.2A, 10V | 3.5V @ 110μA | 6A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7640S2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf7640s2tr-datasheets-1624.pdf | DirectFET™ Isometric SB | Lead Free | 2 | 16 Weeks | 6 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 30W | 1 | FET General Purpose Power | R-XBCC-N2 | 4 ns | 12ns | 6.2 ns | 6.3 ns | 5.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 30W Tc | 77A | 84A | 57 mJ | 60V | N-Channel | 450pF @ 25V | 36m Ω @ 13A, 10V | 5V @ 25μA | 5.8A Ta 21A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPD80R1K2P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd80r1k2p7atma1-datasheets-1283.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 37W Tc | TO-252AA | 11A | 10 mJ | N-Channel | 300pF @ 500V | 1.2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 4.5A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y9R9-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y9r980ex-datasheets-1292.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | GULL WING | 4 | 1 | Single | 195W | 1 | 15 ns | 23ns | 21 ns | 34 ns | 89A | 20V | 80V | SILICON | DRAIN | SWITCHING | 195W Tc | MO-235 | 0.0099Ohm | 80V | N-Channel | 498pF @ 25V | 98m Ω @ 5A, 10V | 4V @ 1mA | 89A Tc | 51.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BUK9675-100A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk9675100a118-datasheets-1501.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 98W | 1 | R-PSSO-G2 | 13 ns | 120ns | 57 ns | 58 ns | 23A | 15V | 100V | SILICON | DRAIN | SWITCHING | 99W Tc | 91A | 0.084Ohm | 100 mJ | 100V | N-Channel | 1704pF @ 25V | 72m Ω @ 10A, 10V | 2V @ 1mA | 23A Tc | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||
| SISS71DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss71dnt1ge3-datasheets-1290.pdf | PowerPAK® 1212-8S | 5 | 14 Weeks | No SVHC | 8 | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N5 | -23A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | -2.5V | 57W Tc | 40A | 31 mJ | P-Channel | 1050pF @ 50V | 59m Ω @ 5A, 10V | 2.5V @ 250μA | 23A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BUK9Y19-75B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk9y1975b115-datasheets-1311.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | Tin | No | e3 | NO | SINGLE | THROUGH-HOLE | 4 | 106W | 1 | 13 ns | 11ns | 21 ns | 77 ns | 48.2A | 15V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 106W Tc | MO-235 | N-Channel | 3096pF @ 25V | 18m Ω @ 20A, 10V | 2.15V @ 1mA | 48.2A Tc | 30nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||
| DMT4004LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt4004lps13-datasheets-1316.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 90A | 40V | 2.6W Ta 138W Tc | N-Channel | 4508pF @ 20V | 2.5m Ω @ 50A, 10V | 3V @ 250μA | 26A Ta 90A Tc | 82.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9240-100A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nxpusainc-buk9240100ac111-datasheets-6607.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 2 | 26 Weeks | 4.535924g | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 114W | 1 | R-PSSO-G2 | 20 ns | 135ns | 90 ns | 125 ns | 33A | 10V | 100V | SILICON | DRAIN | SWITCHING | 114W Tc | TO-252AA | 0.0446Ohm | 100V | N-Channel | 3072pF @ 25V | 38.6m Ω @ 25A, 10V | 2V @ 1mA | 33A Tc | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||
| SIJA54DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sija54dpt1ge3-datasheets-1354.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60A | 40V | 36.7W Tc | N-Channel | 5300pF @ 20V | 2.35m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 104nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMPH4015SK3Q-13 | Diodes Incorporated | $10.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph4015sk313-datasheets-1073.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 15 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 45A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.7W Ta | 14A | 100A | 0.015Ohm | 260 mJ | P-Channel | 4234pF @ 20V | 11m Ω @ 9.8A, 10V | 2.5V @ 250μA | 14A Ta 45A Tc | 91nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| PSMN050-80BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn05080bs118-datasheets-1367.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 56W | 1 | R-PSSO-G2 | 9.2 ns | 1ns | 2.4 ns | 16 ns | 22A | 5.2V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 56W Tc | 88A | 0.046Ohm | 18 mJ | 73V | N-Channel | 633pF @ 12V | 46m Ω @ 10A, 10V | 4V @ 1mA | 22A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI7629DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7629dnt1ge3-datasheets-1286.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | 4.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 21.3A | 12V | SILICON | DRAIN | SWITCHING | 20V | 20V | 3.7W Ta 52W Tc | 35A | 20 mJ | P-Channel | 5790pF @ 10V | 4.6m Ω @ 20A, 10V | 1.5V @ 250μA | 35A Tc | 177nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||
| IPD60R400CEAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r400ceauma1-datasheets-1301.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 1 | R-PSSO-G2 | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 112W Tc | 30A | 0.4Ohm | 210 mJ | N-Channel | 700pF @ 100V | 400m Ω @ 3.8A, 10V | 3.5V @ 300μA | 14.7A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| PSMN017-30BL,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn01730bl118-datasheets-1279.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 47W | 1 | R-PSSO-G2 | 10.7 ns | 9.2ns | 5.1 ns | 11.4 ns | 32A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 47W Tc | 154A | 30V | N-Channel | 552pF @ 15V | 17m Ω @ 10A, 10V | 2.15V @ 1mA | 32A Tc | 10.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| CXDM1002N TR PBFREE | Central Semiconductor Corp | $0.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cxdm1002ntrpbfree-datasheets-1081.pdf | TO-243AA | 20 Weeks | YES | FET General Purpose Power | Single | 100V | 1.2W Ta | 2A | N-Channel | 550pF @ 25V | 300m Ω @ 2A, 10V | 2.5V @ 250μA | 2A Ta | 6nC @ 5V | 4.5V 10V | 20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y30-75B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/nexperiausainc-buk9y3075bc2115-datasheets-3649.pdf | SC-100, SOT-669 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 4 | 12 Weeks | 4.535924g | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | SINGLE | GULL WING | 260 | 4 | 30 | 85W | 1 | 16 ns | 106ns | 83 ns | 51 ns | 34A | 15V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85W Tc | MO-235 | 0.03Ohm | 78 mJ | 75V | N-Channel | 2070pF @ 25V | 28m Ω @ 15A, 10V | 2V @ 1mA | 34A Tc | 19nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||
| BUK9207-30B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~185°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk920730b118-datasheets-1211.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 26 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 167W | 1 | R-PSSO-G2 | 19 ns | 82ns | 107 ns | 100 ns | 112A | 15V | 30V | SILICON | DRAIN | SWITCHING | 167W Tc | TO-252AA | 75A | 424A | 0.0077Ohm | 30V | N-Channel | 3430pF @ 25V | 5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 31nC @ 5V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||
| RSD201N10TL | ROHM Semiconductor | $3.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | EAR99 | not_compliant | e2 | Tin/Copper (Sn98Cu2) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSSO-G2 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 850mW Ta 20W Tc | 0.05Ohm | N-Channel | 2100pF @ 25V | 46m Ω @ 20A, 10V | 2.5V @ 1mA | 20A Tc | 55nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TPH7R006PL,L1Q | Toshiba Semiconductor and Storage | $0.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tph7r006pll1q-datasheets-1253.pdf | 8-PowerVDFN | 12 Weeks | 8-SOP Advance (5x5) | 60V | 81W Tc | N-Channel | 1875pF @ 30V | 13.5mOhm @ 10A, 4.5V | 2.5V @ 200μA | 60A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7214-75B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk721475b118-datasheets-2190.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 167W | 1 | R-PSSO-G2 | 18 ns | 114ns | 45 ns | 52 ns | 70A | 20V | 75V | SILICON | DRAIN | SWITCHING | 158W Tc | TO-252AA | 75V | N-Channel | 2612pF @ 25V | 14m Ω @ 25A, 10V | 4V @ 1mA | 70A Tc | 41nC @ 10V | 10V | ±20V |
