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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| JAN2N6849 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/564 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6849-datasheets-1758.pdf | TO-205AF Metal Can | 3 | 3 | EAR99 | HIGH RELIABILITY | Lead, Tin | BOTTOM | WIRE | 800mW | 1 | Other Transistors | Qualified | 6.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 800mW Ta 25W Tc | P-Channel | 320m Ω @ 6.5A, 10V | 4V @ 250μA | 6.5A Tc | 34.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| APT33N90JCCU2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt33n90jccu2-datasheets-1761.pdf | SOT-227-4, miniBLOC | 4 | 22 Weeks | 4 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | UPPER | UNSPECIFIED | 4 | 290W | 1 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 290W Tc | 75A | N-Channel | 6800pF @ 100V | 120m Ω @ 26A, 10V | 3.5V @ 3mA | 33A Tc | 270nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| JAN2N6758 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/542 | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jan2n6758-datasheets-1724.pdf | TO-204AA, TO-3 | 2 | 3 | no | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | MIL-19500/542 | BOTTOM | PIN/PEG | 2 | 1 | Qualified | O-MBFM-P2 | 35 ns | 80ns | 40 ns | 60 ns | 9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 4W Ta 75W Tc | 9A | 0.49Ohm | N-Channel | 490m Ω @ 9A, 10V | 4V @ 250μA | 9A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| APTM100DA18CT1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | SP1 | 10 | 1 | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 12 | 657W | 1 | FET General Purpose Power | 85 ns | 75ns | 70 ns | 285 ns | 40A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1000V | 657W Tc | 260A | N-Channel | 14800pF @ 25V | 216m Ω @ 33A, 10V | 5V @ 2.5mA | 40A Tc | 570nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| APTC90SKM60T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc90skm60t1g-datasheets-1688.pdf | SP1 | 10 | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | UPPER | UNSPECIFIED | 12 | 1 | FET General Purpose Power | Not Qualified | 59A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 900V | 900V | 462W Tc | 0.06Ohm | N-Channel | 13600pF @ 100V | 60m Ω @ 52A, 10V | 3.5V @ 6mA | 59A Tc | 540nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| 2SK2035(T5L,F,T) | Toshiba Semiconductor and Storage | $11.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | SC-75, SOT-416 | 3 | No | 100mW | 1 | SSM | 8.5pF | 100mA | 10V | 20V | 100mW Ta | N-Channel | 8.5pF @ 3V | 12Ohm @ 10mA, 2.5V | 100mA Ta | 12 Ω | 2.5V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT11F80S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt11f80s-datasheets-1692.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | HIGH RELIABILITY | Pure Matte Tin (Sn) | SINGLE | GULL WING | 245 | 3 | 30 | 1 | Not Qualified | R-PSSO-G2 | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 337W Tc | 46A | 1Ohm | 524 mJ | N-Channel | 2471pF @ 25V | 900m Ω @ 6A, 10V | 5V @ 1mA | 12A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT33N90JCU2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt33n90jcu2-datasheets-1693.pdf | SOT-227-4, miniBLOC | 4 | EAR99 | No | 290W | 1 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 33A | 20V | 900V | 290W Tc | N-Channel | 6800pF @ 100V | 120m Ω @ 26A, 10V | 3.5V @ 3mA | 33A Tc | 270nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| APT30N60SC6 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt30n60bc6-datasheets-3544.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | e3 | TIN | SINGLE | GULL WING | 3 | 219W | 1 | R-PSSO-G2 | 9 ns | 17ns | 48 ns | 74 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 219W Tc | 89A | N-Channel | 2267pF @ 25V | 125m Ω @ 14.5A, 10V | 3.5V @ 960μA | 30A Tc | 88nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIA439EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia439edjt1ge3-datasheets-1696.pdf | PowerPAK® SC-70-6 | 3 | 25 Weeks | yes | EAR99 | No | DUAL | Single | 19W | 1 | S-PDSO-N3 | 20ns | 25 ns | 95 ns | 28A | 8V | SILICON | DRAIN | SWITCHING | 20V | 3.5W Ta 19W Tc | 60A | 0.018Ohm | 5.8 mJ | -20V | P-Channel | 2410pF @ 10V | 16.5m Ω @ 5A, 4.5V | 1V @ 250μA | 28A Tc | 69nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SSM3K7002BF,LF | Toshiba Semiconductor and Storage | $0.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k7002bflf-datasheets-1703.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | No | 1 | Single | 3.3 ns | 14.5 ns | 200mA | 3.1V | 200mW Ta | 60V | N-Channel | 17pF @ 25V | 2.1 Ω @ 500mA, 10V | 200mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT33N90JCU3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-apt33n90jcu3-datasheets-1712.pdf | SOT-227-4, miniBLOC | 4 | 22 Weeks | 4 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | UPPER | UNSPECIFIED | 4 | 290W | 1 | FET General Purpose Power | Not Qualified | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 290W Tc | 75A | N-Channel | 6800pF @ 100V | 120m Ω @ 26A, 10V | 3.5V @ 3mA | 33A Tc | 270nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| APT18M80S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt18m80s-datasheets-1714.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | AVALANCHE RATED | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 1 | Not Qualified | R-PSSO-G2 | 19A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 500W Tc | 70A | 0.53Ohm | 795 mJ | N-Channel | 3760pF @ 25V | 530m Ω @ 9A, 10V | 5V @ 1mA | 19A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APT47N65SCS3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -55°C~150°C TJ | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | TO-247 | 417W Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60DAM24CT1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | SP4 | 10 | 4 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | UPPER | UNSPECIFIED | 12 | 1 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 600V | 600V | 462W Tc | 260A | N-Channel | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 95A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SSM3K318T,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 3 | 1 | Single | TSM | 235pF | 14 ns | 9.5 ns | 2.5A | 2.8V | 60V | 700mW Ta | 101mOhm | 60V | N-Channel | 235pF @ 30V | 107mOhm @ 2A, 10V | 2.5A Ta | 7nC @ 10V | 107 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC90DAM60CT1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc90dam60ct1g-datasheets-1717.pdf | SP1 | 10 | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | UPPER | UNSPECIFIED | 12 | 1 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 59A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 900V | 900V | 462W Tc | 0.06Ohm | N-Channel | 13600pF @ 100V | 60m Ω @ 52A, 10V | 3.5V @ 6mA | 59A Tc | 540nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| 2SK1829TE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | SC-70, SOT-323 | 16 Weeks | unknown | 20V | 100mW Ta | N-Channel | 5.5pF @ 3V | 40 Ω @ 10mA, 2.5V | 50mA Ta | 2.5V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT38N60SC6 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt38n60sc6-datasheets-1721.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | e3 | TIN | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 600V | 600V | 278W Tc | 38A | 112A | 0.099Ohm | 796 mJ | N-Channel | 2826pF @ 25V | 99m Ω @ 18A, 10V | 3.5V @ 1.2mA | 38A Tc | 112nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SSM3J14TTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSII | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | unknown | YES | Other Transistors | Single | 30V | 700mW Ta | 2.7A | P-Channel | 413pF @ 15V | 85m Ω @ 1.35A, 10V | 2.7A Ta | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC90DAM60T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc90dam60t1g-datasheets-1684.pdf | SP1 | 10 | 22 Weeks | 1 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | UPPER | UNSPECIFIED | 12 | 1 | FET General Purpose Power | 70 ns | 20ns | 25 ns | 400 ns | 59A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 900V | 900V | 462W Tc | 0.06Ohm | N-Channel | 13600pF @ 100V | 60m Ω @ 52A, 10V | 3.5V @ 6mA | 59A Tc | 540nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| APT15F60S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt15f60b-datasheets-4054.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | AVALANCHE RATED, HIGH RELIABILITY | SINGLE | GULL WING | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 290W Tc | 54A | 0.43Ohm | 405 mJ | N-Channel | 2882pF @ 25V | 430m Ω @ 7A, 10V | 5V @ 500μA | 16A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| HN4K03JUTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | 5-TSSOP, SC-70-5, SOT-353 | 2 | Dual | FET General Purpose Powers | 160 ns | 150 ns | 100mA | 1.5V | 200mW Ta | 0.1A | 20V | N-Channel | 8.5pF @ 3V | 12 Ω @ 10mA, 2.5V | 100mA Ta | 2.5V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM5N16FUTE85LF | Toshiba Semiconductor and Storage | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 5-TSSOP, SC-70-5, SOT-353 | 12 Weeks | 2 | Dual | FET General Purpose Powers | 70 ns | 125 ns | 100mA | 1.1V | 200mW Ta | 0.1A | 20V | N-Channel | 9.3pF @ 3V | 3 Ω @ 10mA, 4V | 100mA Ta | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J16CT(TPL3) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SC-101, SOT-883 | 11 Weeks | unknown | 1 | Single | Other Transistors | 130 ns | 190 ns | 100mA | -1.1V | 20V | 100mW Ta | -20V | P-Channel | 11pF @ 3V | 8 Ω @ 10mA, 4V | 1.1V @ 100μA | 100mA Ta | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K01T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | TO-236-3, SC-59, SOT-23-3 | 3 | No | 1 | Single | 1.25W | FET General Purpose Powers | 45 ns | 69 ns | 3.2A | 1.1V | 1.25W Ta | 30V | N-Channel | 152pF @ 10V | 120m Ω @ 1.6A, 4V | 3.2A Ta | 2.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT28F60S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt28f60s-datasheets-1651.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 3 | yes | AVALANCHE RATED, HIGH RELIABILITY | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 520W | 1 | Not Qualified | R-PSSO-G2 | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 520W Tc | 0.22Ohm | 780 mJ | N-Channel | 5575pF @ 25V | 220m Ω @ 14A, 10V | 5V @ 1mA | 30A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| DMP3120L-7 | Diodes Incorporated | $20.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp3120l7-datasheets-8148.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | 3 | 1.437803g | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | Other Transistors | 5.6 ns | 6.8ns | 6.8 ns | 35.3 ns | 2.8A | 12V | SILICON | SWITCHING | 30V | 1.4W Ta | 9A | P-Channel | 285pF @ 15V | 120m Ω @ 2.8A, 4.5V | 1.4V @ 250μA | 2.8A Ta | 6.7nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||
| ZXMP3F35N8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmp3f35n8ta-datasheets-1655.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 506.605978mg | 12mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 8 | 2 | Dual | 40 | 2.8W | 1 | Other Transistors | 5.4 ns | 9.9ns | 55.6 ns | 103 ns | 12.3A | 20V | SILICON | SWITCHING | 30V | 1.56W Ta | 17.1A | -30V | P-Channel | 4600pF @ 15V | 12m Ω @ 12A, 10V | 2.6V @ 250μA | 9.3A Ta | 77.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| DMP3008SFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp3008sfg7-datasheets-0205.pdf | 8-PowerVDFN | 5 | 18 Weeks | 72.007789mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | 260 | 8 | 2 | 40 | 1 | Other Transistors | S-PDSO-N5 | 10.5 ns | 8.5ns | 40 ns | 90 ns | 8.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900mW Ta | 7.1A | 30V | P-Channel | 2230pF @ 15V | 17m Ω @ 10A, 10V | 2.1V @ 250μA | 8.6A Ta | 47nC @ 10V | 4.5V 10V | ±20V |
