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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT23F60S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt23f60b-datasheets-4039.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED, HIGH RELIABILITY | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 1 | Not Qualified | R-PSSO-G2 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 415W Tc | 80A | 0.29Ohm | 615 mJ | N-Channel | 4415pF @ 25V | 290m Ω @ 11A, 10V | 5V @ 1mA | 24A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPU50R950CEBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-ipu50r950cebkma1-datasheets-1661.pdf | TO-251-3 Short Leads, IPak, TO-251AA | no | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 500V | 34W Tc | N-Channel | 231pF @ 100V | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 4.3A Tc | 10.5nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J36MFV,L3F | Toshiba Semiconductor and Storage | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SOT-723 | VESM | 43pF | 330mA | 20V | 150mW Ta | P-Channel | 43pF @ 10V | 1.31Ohm @ 100mA, 4.5V | 330mA Ta | 1.2nC @ 4V | 1.31 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP3F36N8TA | Diodes Incorporated | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmp3f36n8ta-datasheets-1675.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 8 | 2 | Dual | 40 | 2.8W | 1 | Other Transistors | 3.1 ns | 5ns | 40 ns | 75 ns | 9.6A | 20V | SILICON | SWITCHING | 30V | 1.56W Ta | -30V | P-Channel | 2265pF @ 15V | 20m Ω @ 10A, 10V | 2.5V @ 250μA | 7.2A Ta | 43.9nC @ 15V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| DMG7401SFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg7401sfg13-datasheets-1622.pdf | 8-PowerVDFN | 3.35mm | 850μm | 3.35mm | 5 | 72.007789mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | 260 | Single | 40 | 1 | Other Transistors | S-PDSO-N5 | 11.3 ns | 15.4ns | 22 ns | 38 ns | 9.8A | 25V | SILICON | DRAIN | SWITCHING | 30V | 30V | 940mW Ta | 0.011Ohm | 391 pF | P-Channel | 2987pF @ 15V | 11m Ω @ 12A, 20V | 3V @ 250μA | 9.8A Ta | 58nC @ 10V | 4.5V 20V | ±25V | ||||||||||||||||||||||||||||||||
| APT20F50S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20f50b-datasheets-3992.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED, HIGH RELIABILITY | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 1 | Not Qualified | R-PSSO-G2 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 290W Tc | 60A | 0.3Ohm | 405 mJ | N-Channel | 2950pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 500μA | 20A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8408 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfs8408-datasheets-1519.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | No SVHC | 3 | EAR99 | Tin | No | IRFS8408 | 1 | Single | 294W | FET General Purpose Power | 29 ns | 202ns | 119 ns | 108 ns | 195A | 20V | 3V | 294W Tc | 40V | N-Channel | 10820pF @ 25V | 3 V | 1.6m Ω @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 324nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIA467EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia467edjt1ge3-datasheets-1496.pdf | PowerPAK® SC-70-6 | 3 | 15 Weeks | yes | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 19W | 1 | S-PDSO-N3 | 25ns | 50 ns | 90 ns | 31A | 8V | SILICON | DRAIN | SWITCHING | 12V | 3.5W Ta 19W Tc | 60A | 0.0145Ohm | 5.8 mJ | -12V | P-Channel | 2520pF @ 6V | 13m Ω @ 5A, 4.5V | 1V @ 250μA | 31A Tc | 72nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| RJK6014DPP-E0#T2 | Renesas Electronics America | $6.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk6014dppe0t2-datasheets-1530.pdf | TO-220-3 Full Pack | 16 Weeks | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | 600V | 35W Tc | N-Channel | 1800pF @ 25V | 575m Ω @ 8A, 10V | 16A Ta | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM4226TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-irfhm4226trpbf-datasheets-1550.pdf | 8-TQFN Exposed Pad | 3.3mm | 900μm | 3.3mm | Lead Free | 5 | No SVHC | 2.2MOhm | 5 | EAR99 | No | DUAL | Single | 2.7W | 1 | FET General Purpose Power | 11 ns | 35ns | 8.1 ns | 14 ns | 28A | 20V | SILICON | DRAIN | SWITCHING | 25V | 1.6V | 2.7W Ta 39W Tc | 40A | 420A | N-Channel | 2000pF @ 13V | 2.2m Ω @ 30A, 10V | 2.1V @ 50μA | 28A Ta | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NP60N055NUK-S18-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np60n055muks18ay-datasheets-1081.pdf | TO-262-3 Full Pack, I2Pak | 16 Weeks | 3 | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | FET General Purpose Powers | 60A | Single | 55V | 1.8W Ta 105W Tc | N-Channel | 3750pF @ 25V | 6m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD42N03-3M9P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud42n033m9pge3-datasheets-0504.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 1.437803g | No SVHC | 2 | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 11 ns | 10ns | 10 ns | 35 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 1V | 2.5W Ta 73.5W Tc | 0.0039Ohm | 30V | N-Channel | 3535pF @ 15V | 3.9m Ω @ 22A, 10V | 2.5V @ 250μA | 42A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| RJK6015DPK-00#T0 | Renesas Electronics America | $3.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk6015dpk00t0-datasheets-1584.pdf | TO-3P-3, SC-65-3 | Lead Free | 16 Weeks | 3 | yes | NOT SPECIFIED | 4 | NOT SPECIFIED | 21A | 600V | 150W Tc | N-Channel | 2600pF @ 25V | 360m Ω @ 10.5A, 10V | 21A Ta | 67nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM4234TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-irfhm4234trpbf-datasheets-1587.pdf | 8-TQFN Exposed Pad | 3.3mm | 900μm | 3.3mm | Lead Free | 5 | No SVHC | 4.4MOhm | 5 | EAR99 | Copper, Silver, Tin | No | DUAL | Single | 2.8W | 1 | FET General Purpose Power | 7.8 ns | 30ns | 5.3 ns | 8 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 25V | 1.6V | 2.8W Ta 28W Tc | 63A | 270A | 39 mJ | N-Channel | 1011pF @ 13V | 4.4m Ω @ 30A, 10V | 2.1V @ 25μA | 20A Ta | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPP60R600P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-ipd60r600p6-datasheets-1513.pdf | TO-220-3 | Lead Free | 12 Weeks | 3 | Halogen Free | PG-TO220-3 | 557pF | 11 ns | 7ns | 14 ns | 33 ns | 7.3A | 20V | 600V | 600V | 63W Tc | 540mOhm | N-Channel | 557pF @ 100V | 600mOhm @ 2.4A, 10V | 4.5V @ 200μA | 7.3A Tc | 12nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4150TZ-E | Renesas Electronics America | $0.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-2sk4150tze-datasheets-1600.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 16 Weeks | 3 | yes | EAR99 | 8541.21.00.95 | BOTTOM | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 400mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 750mW Ta | 0.4A | 5.9Ohm | N-Channel | 80pF @ 25V | 5.7 Ω @ 200mA, 4V | 400mA Ta | 3.7nC @ 4V | 2.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFH4234TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irfh4234trpbf-datasheets-1534.pdf | 8-PowerTDFN | 6mm | 900μm | 5mm | Lead Free | No SVHC | 5 | EAR99 | Copper, Silver, Tin | No | Single | 3.5W | 1 | FET General Purpose Power | 7.8 ns | 30ns | 5.3 ns | 8 ns | 22A | 20V | 25V | 1.6V | 3.5W Ta 27W Tc | 60A | N-Channel | 1011pF @ 13V | 4.6m Ω @ 30A | 2.1V @ 25μA | 22A Ta | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD50R1K4CEBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50r1k4cebtma1-datasheets-1578.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | no | EAR99 | compliant | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Powers | Single | 500V | 25W Tc | 3.1A | N-Channel | 178pF @ 100V | 1.4 Ω @ 900mA, 13V | 3.5V @ 70μA | 3.1A Tc | 1nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT18F60S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt18f60b-datasheets-0466.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 3 | yes | AVALANCHE RATED, HIGH RELIABILITY | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 335W | 1 | Not Qualified | R-PSSO-G2 | 19A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 335W Tc | 65A | 495 mJ | N-Channel | 3550pF @ 25V | 370m Ω @ 9A, 10V | 5V @ 1mA | 19A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| ZXM62P03E6TC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxm62p03e6ta-datasheets-8569.pdf | SOT-23-6 | 3.1mm | 1.3mm | 1.8mm | 6 | 14.996898mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 40 | 625mW | 1 | 2.8 ns | 6.4ns | 6.4 ns | 13.9 ns | 1.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 625mW Ta | -30V | P-Channel | 330pF @ 25V | 230m Ω @ 800mA, 4.5V | 1V @ 250μA | 1.5A Ta | 10.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AUIRFR8405 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfu8405-datasheets-7653.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 15 Weeks | No SVHC | 3 | EAR99 | Tin | No | IRFR8405 | 1 | Single | 163W | FET General Purpose Power | 12 ns | 80ns | 51 ns | 51 ns | 100A | 20V | 163W Tc | 40V | N-Channel | 5171pF @ 25V | 3 V | 1.98m Ω @ 90A, 10V | 3.9V @ 100μA | 100A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| UPA2735GR-E1-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2735gre1at-datasheets-1507.pdf | 8-PowerSOIC (0.173, 4.40mm Width) | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | Other Transistors | 35 ns | 85ns | 400 ns | 300 ns | 16A | 20V | Single | 30V | 1.1W Ta | P-Channel | 6250pF @ 10V | 5m Ω @ 16A, 10V | 16A Ta | 195nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH4213TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh4213trpbf-datasheets-1346.pdf | 8-PowerTDFN | 6mm | 900μm | 5mm | Lead Free | No SVHC | 5 | EAR99 | Copper, Silver, Tin | No | Single | 3.6W | 1 | FET General Purpose Power | 14 ns | 35ns | 12 ns | 17 ns | 41A | 20V | 25V | 1.6V | 3.6W Ta 89W Tc | N-Channel | 3420pF @ 13V | 1.35m Ω @ 50A, 10V | 2.1V @ 100μA | 41A Ta | 54nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| 2SK2225-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-2sk2225e-datasheets-1401.pdf | TO-3PFM, SC-93-3 | 25.5mm | 3 | 16 Weeks | EAR99 | e2 | Tin/Copper (Sn/Cu) | NO | SINGLE | NOT SPECIFIED | 3 | 1 | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 17 ns | 150 ns | 2A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1500V | 50W Tc | 2A | 7A | 1.5kV | N-Channel | 984.7pF @ 30V | 12 Ω @ 1A, 15V | 2A Ta | 15V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| RJK6018DPM-00#T1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk6018dpm00t1-datasheets-1412.pdf | TO-3PFM, SC-93-3 | 16 Weeks | yes | NOT SPECIFIED | 3 | NOT SPECIFIED | FET General Purpose Power | 30A | Single | 600V | 60W Tc | N-Channel | 4100pF @ 25V | 235m Ω @ 15A, 10V | 30A Ta | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2392DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2392dst1ge3-datasheets-1189.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | 68ns | 20 ns | 10 ns | 3.1A | 3V | SILICON | SWITCHING | 1.25W Ta 2.5W Tc | 0.126Ohm | 100V | N-Channel | 196pF @ 50V | 126m Ω @ 2A, 10V | 3V @ 250μA | 3.1A Tc | 10.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| RJK6013DPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk6013dpe00j3-datasheets-1425.pdf | SC-83 | Lead Free | 16 Weeks | 83 | NOT SPECIFIED | 4 | NOT SPECIFIED | FET General Purpose Power | 11A | Single | 600V | 100W Tc | N-Channel | 1450pF @ 25V | 700m Ω @ 5.5A, 10V | 11A Ta | 37.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK5034DPP-E0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 Full Pack | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8403 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfsl8403-datasheets-8156.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 10 Weeks | No SVHC | 3 | Tin | No | 1 | Single | 99W | 1 | D2PAK | 3.183nF | 10 ns | 77ns | 43 ns | 26 ns | 123A | 20V | 40V | 99W Tc | 2.6mOhm | N-Channel | 3183pF @ 25V | 3 V | 3.3mOhm @ 70A, 10V | 3.9V @ 100μA | 123A Tc | 93nC @ 10V | 3.3 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFH4213DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irfh4213dtrpbf-datasheets-1444.pdf | 8-PowerTDFN | 6mm | 900μm | 5mm | Lead Free | No SVHC | 1.35MOhm | 5 | EAR99 | No | Single | 3.6W | 1 | FET General Purpose Power | 14 ns | 30ns | 12 ns | 18 ns | 40A | 20V | 25V | 1.6V | 3.6W Ta 96W Tc | N-Channel | 3520pF @ 13V | 1.35m Ω @ 50A, 10V | 2.1V @ 100μA | 40A Ta | 55nC @ 10V | 4.5V 10V | ±20V |
