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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| RJK1003DPP-E0#T2 | Renesas Electronics America | $3.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk1003dppe0t2-datasheets-1370.pdf | TO-220-3 Full Pack | 16 Weeks | NOT SPECIFIED | 3 | NOT SPECIFIED | 50A | 100V | 25W Tc | N-Channel | 4150pF @ 10V | 11m Ω @ 25A, 10V | 50A Ta | 59nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2813T1L-E2-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2813t1le2at-datasheets-1493.pdf | 8-PowerVDFN | 16 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 8 | NOT SPECIFIED | Other Transistors | 16 ns | 41ns | 234 ns | 196 ns | 27A | 20V | Single | 30V | 1.5W Ta | P-Channel | 3130pF @ 10V | 6.2m Ω @ 27A, 10V | 27A Tc | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFH4201TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-irfh4201trpbf-datasheets-1335.pdf | 8-PowerVDFN | 6mm | 900μm | 5mm | Lead Free | 5 | No SVHC | 5 | EAR99 | Copper, Silver, Tin | No | DUAL | Single | 3.5W | 1 | FET General Purpose Power | 20 ns | 43ns | 19 ns | 24 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 25V | 1.6V | 3.5W Ta 156W Tc | 400A | 478 mJ | N-Channel | 6100pF @ 13V | 0.95m Ω @ 50A, 10V | 2.1V @ 150μA | 49A Ta | 94nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI5415EDU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5415edut1ge3-datasheets-1196.pdf | PowerPAK® ChipFET™ Single | 15 Weeks | 8 | EAR99 | No | Single | 45ns | 25 ns | 75 ns | 25A | -1V | 20V | 3.1W Ta 31W Tc | -20V | P-Channel | 4300pF @ 10V | 9.8m Ω @ 10A, 4.5V | 1V @ 250μA | 25A Tc | 120nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFH4213TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh4213trpbf-datasheets-1346.pdf | 8-PowerTDFN | 6mm | 900μm | 5mm | Lead Free | No SVHC | 5 | EAR99 | Copper, Silver, Tin | No | Single | 3.6W | 1 | FET General Purpose Power | 14 ns | 35ns | 12 ns | 17 ns | 41A | 20V | 25V | 1.6V | 3.6W Ta 89W Tc | N-Channel | 3420pF @ 13V | 1.35m Ω @ 50A, 10V | 2.1V @ 100μA | 41A Ta | 54nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| 2SK2225-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-2sk2225e-datasheets-1401.pdf | TO-3PFM, SC-93-3 | 25.5mm | 3 | 16 Weeks | EAR99 | e2 | Tin/Copper (Sn/Cu) | NO | SINGLE | NOT SPECIFIED | 3 | 1 | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 17 ns | 150 ns | 2A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1500V | 50W Tc | 2A | 7A | 1.5kV | N-Channel | 984.7pF @ 30V | 12 Ω @ 1A, 15V | 2A Ta | 15V | ±20V | |||||||||||||||||||||||||||||||||
| RJK6018DPM-00#T1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk6018dpm00t1-datasheets-1412.pdf | TO-3PFM, SC-93-3 | 16 Weeks | yes | NOT SPECIFIED | 3 | NOT SPECIFIED | FET General Purpose Power | 30A | Single | 600V | 60W Tc | N-Channel | 4100pF @ 25V | 235m Ω @ 15A, 10V | 30A Ta | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2392DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2392dst1ge3-datasheets-1189.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | 68ns | 20 ns | 10 ns | 3.1A | 3V | SILICON | SWITCHING | 1.25W Ta 2.5W Tc | 0.126Ohm | 100V | N-Channel | 196pF @ 50V | 126m Ω @ 2A, 10V | 3V @ 250μA | 3.1A Tc | 10.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| RJK6013DPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk6013dpe00j3-datasheets-1425.pdf | SC-83 | Lead Free | 16 Weeks | 83 | NOT SPECIFIED | 4 | NOT SPECIFIED | FET General Purpose Power | 11A | Single | 600V | 100W Tc | N-Channel | 1450pF @ 25V | 700m Ω @ 5.5A, 10V | 11A Ta | 37.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR8403 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfr8403trl-datasheets-3883.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 26 Weeks | No SVHC | 3 | EAR99 | Tin | No | IRFR8403 | 1 | Single | 99W | FET General Purpose Power | 10 ns | 32ns | 23 ns | 31 ns | 100A | 20V | 3V | 99W Tc | 40V | N-Channel | 3171pF @ 25V | 3 V | 3.1m Ω @ 76A, 10V | 3.9V @ 100μA | 100A Tc | 99nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AUIRFS8409 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfb8409-datasheets-0594.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 39 Weeks | No SVHC | 3 | EAR99 | Tin | No | IRFS8409 | 1 | Single | 375W | FET General Purpose Power | 32 ns | 105ns | 100 ns | 160 ns | 195A | 20V | 3.9V | 375W Tc | 40V | N-Channel | 14240pF @ 25V | 2.2 V | 1.2m Ω @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 450nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AUIRFS8408-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfs84087trl-datasheets-2297.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 10 Weeks | No SVHC | 7 | No | IRFS8408 | 1 | Single | 294W | 1 | D2PAK | 10.25nF | 23 ns | 125ns | 85 ns | 107 ns | 240A | 20V | 40V | 3V | 294W Tc | 1mOhm | 40V | N-Channel | 10250pF @ 25V | 3 V | 1mOhm @ 100A, 10V | 3.9V @ 250μA | 240A Tc | 315nC @ 10V | 1 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||
| AUIRFR8401 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/infineontechnologies-auirfu8401-datasheets-0743.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 13 Weeks | No SVHC | 3 | Tin | No | IRFR8401 | 1 | Single | 79W | 1 | D-Pak | 2.2nF | 7.9 ns | 34ns | 24 ns | 25 ns | 100A | 20V | 40V | 3.9V | 79W Tc | 4.25mOhm | 40V | N-Channel | 2200pF @ 25V | 2.2 V | 4.25mOhm @ 60A, 10V | 3.9V @ 50μA | 100A Tc | 63nC @ 10V | 4.25 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||
| PMR290UNE,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | SC-75, SOT-416 | 3 | 2013-06-14 00:00:00 | 20V | 250mW Ta 770mW Tc | N-Channel | 83pF @ 10V | 380m Ω @ 500mA, 4.5V | 950mV @ 250μA | 700mA Ta | 0.68nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK6032DPH-E0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk6032dphe0t2-datasheets-1354.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 16 Weeks | EAR99 | 4 | FET General Purpose Power | 3A | Single | 600V | 40.3W Tc | 3A | N-Channel | 285pF @ 25V | 4.3 Ω @ 1.5A, 10V | 3A Ta | 9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2812T1L-E2-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2812t1le2at-datasheets-1268.pdf | 8-PowerVDFN | 16 Weeks | 8 | yes | EAR99 | NOT SPECIFIED | 8 | NOT SPECIFIED | Other Transistors | 24 ns | 53ns | 252 ns | 176 ns | 30A | 20V | Single | 30V | 1.5W Ta | P-Channel | 3740pF @ 10V | 4.8m Ω @ 30A, 10V | 30A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8408-7TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfs84087trl-datasheets-2297.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | compliant | IRFS8408 | 40V | 294W Tc | N-Channel | 10250pF @ 25V | 1m Ω @ 100A, 10V | 3.9V @ 250μA | 240A Tc | 315nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK2508DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/renesaselectronicsamerica-rjk2508dpk00t0-datasheets-1271.pdf | TO-3P-3, SC-65-3 | 16 Weeks | yes | EAR99 | NOT SPECIFIED | 4 | NOT SPECIFIED | 50A | 250V | 150W Tc | N-Channel | 2600pF @ 25V | 64m Ω @ 25A, 10V | 50A Ta | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH4210TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | /files/infineontechnologies-irfh4210trpbf-datasheets-1363.pdf | 8-PowerTDFN | 6mm | 900μm | 5mm | Lead Free | No SVHC | 1.1MOhm | 5 | EAR99 | No | Single | 3.6W | 1 | FET General Purpose Power | 20 ns | 44ns | 15 ns | 24 ns | 45A | 20V | 25V | 1.6V | 3.6W Ta 104W Tc | N-Channel | 4812pF @ 13V | 1.35m Ω @ 50A, 10V | 2.1V @ 100μA | 45A Ta | 74nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| RJL5012DPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjl5012dpe00j3-datasheets-1274.pdf | SC-83 | 16 Weeks | 83 | NOT SPECIFIED | 4 | NOT SPECIFIED | 12A | 500V | 100W Tc | N-Channel | 1050pF @ 25V | 700m Ω @ 6A, 10V | 12A Ta | 27.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2736GR-E1-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2736gre1at-datasheets-1277.pdf | 8-PowerSOIC (0.173, 4.40mm Width) | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | Other Transistors | 14A | Single | 30V | 1.1W Ta | P-Channel | 3400pF @ 10V | 7m Ω @ 14A, 10V | 14A Ta | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK5020DPK-00#T0 | Renesas Electronics America | $27.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk5020dpk00t0-datasheets-1282.pdf | TO-3P-3, SC-65-3 | 16 Weeks | yes | NOT SPECIFIED | 4 | NOT SPECIFIED | 40A | 500V | 200W Tc | N-Channel | 5150pF @ 25V | 118m Ω @ 20A, 10V | 40A Ta | 126nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK5026DPP-M0#T2 | Renesas Electronics America | $6.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk5026dppm0t2-datasheets-1285.pdf | TO-220-3 Full Pack | Lead Free | 16 Weeks | NOT SPECIFIED | 3 | NOT SPECIFIED | 6A | 500V | 28.5W Tc | N-Channel | 440pF @ 25V | 1.7 Ω @ 3A, 10V | 6A Ta | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK5026DPP-E0#T2 | Renesas Electronics America | $3.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk5026dppe0t2-datasheets-1288.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | NOT SPECIFIED | 3 | NOT SPECIFIED | 26 ns | 19ns | 14 ns | 50 ns | 6A | 30V | 500V | 28.5W Tc | N-Channel | 440pF @ 25V | 1.7 Ω @ 3A, 10V | 6A Ta | 14nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RJK6002DPD-00#J2 | Renesas Electronics America | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk6002dpd00j2-datasheets-1292.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | NOT SPECIFIED | 4 | NOT SPECIFIED | 30W | 1 | 2A | 30V | 600V | 30W Tc | N-Channel | 165pF @ 25V | 6.8 Ω @ 1A, 10V | 2A Ta | 6.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF11N62 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aotf11n62-datasheets-9766.pdf | TO-220-3 Full Pack | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 11A | 620V | 50W Tc | N-Channel | 1990pF @ 25V | 650m Ω @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2018 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2018-datasheets-1300.pdf | Die | 14 Weeks | Die | 540pF | 12A | 150V | N-Channel | 540pF @ 100V | 25mOhm @ 6A, 5V | 2.5V @ 3mA | 12A Ta | 7.5nC @ 5V | 25 mΩ | 5V | +6V, -5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK4013DPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk4013dpe00j3-datasheets-1249.pdf | SC-83 | 16 Weeks | 83 | NOT SPECIFIED | 4 | NOT SPECIFIED | 17A | 400V | 100W Tc | N-Channel | 1450pF @ 25V | 300m Ω @ 8.5A, 10V | 17A Ta | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK6013DPP-E0#T2 | Renesas Electronics America | $6.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk6013dppe0t2-datasheets-1252.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | FET General Purpose Powers | 11A | Single | 600V | 30W Tc | N-Channel | 1450pF @ 25V | 700m Ω @ 5.5A, 10V | 11A Ta | 37.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RJL6012DPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjl6012dpe00j3-datasheets-1256.pdf | SC-83 | Lead Free | 16 Weeks | 83 | NOT SPECIFIED | 4 | NOT SPECIFIED | FET General Purpose Power | 10A | Single | 600V | 100W Tc | N-Channel | 1050pF @ 25V | 1.1 Ω @ 5A, 10V | 10A Ta | 28nC @ 10V | 10V | ±30V |
