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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI1405DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1405dlt1ge3-datasheets-6027.pdf | 6-TSSOP, SC-88, SOT-363 | 2.3876mm | 990.6μm | 1.3462mm | Lead Free | 125mOhm | 6 | No | Single | 568mW | SC-70-6 (SOT-363) | 8 ns | 36ns | 36 ns | 33 ns | 1.6A | 8V | 8V | 568mW Ta | 210mOhm | 8V | P-Channel | 125mOhm @ 1.8A, 4.5V | 450mV @ 250μA (Min) | 1.6A Ta | 7nC @ 4.5V | 54 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF6215S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf6215strl-datasheets-3042.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 9 Weeks | EAR99 | AVALANCHE RATED | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 110W Tc | 13A | 44A | 0.29Ohm | 310 mJ | P-Channel | 860pF @ 25V | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R650CEBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/infineontechnologies-ipd50r650ceauma1-datasheets-3165.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 47W Tc | TO-252AA | 6.1A | 19A | 0.65Ohm | 102 mJ | N-Channel | 342pF @ 100V | 650m Ω @ 1.8A, 13V | 3.5V @ 150μA | 6.1A Tc | 15nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7805QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf7805qtr-datasheets-3288.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 26 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | DUAL | GULL WING | 2.5W | 1 | FET General Purpose Power | 16 ns | 20ns | 16 ns | 38 ns | 13A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 30V | N-Channel | 1 V | 11m Ω @ 7A, 4.5V | 3V @ 250μA | 13A Ta | 31nC @ 5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI1307DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1307dlt1ge3-datasheets-6164.pdf | SC-70, SOT-323 | 2.1844mm | 990.6μm | 1.3462mm | Lead Free | 3 | 290mOhm | 3 | yes | EAR99 | 68A | unknown | e3 | MATTE TIN | 12V | DUAL | GULL WING | 260 | 3 | Single | 40 | 290mW | 1 | Not Qualified | 7.5 ns | 32ns | 32 ns | 17 ns | 850mA | 8V | SILICON | 290mW Ta | -12V | P-Channel | 290m Ω @ 1A, 4.5V | 450mV @ 250μA (Min) | 850mA Ta | 5nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| AUIRF7805Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-auirf7805qtr-datasheets-3288.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | compliant | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 40 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 13A | 100A | 0.011Ohm | N-Channel | 11m Ω @ 7A, 4.5V | 3V @ 250μA | 13A Ta | 31nC @ 5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLL2705 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirll2705tr-datasheets-4936.pdf | TO-261-4, TO-261AA | EAR99 | compliant | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 55V | 1W Ta | 5.2A | N-Channel | 870pF @ 25V | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 5.2A Ta | 48nC @ 10V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFBA1405 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/infineontechnologies-auirfba1405-datasheets-3210.pdf | TO-273AA | Lead Free | 8 Weeks | 3 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 330W | 1 | FET General Purpose Power | 13 ns | 190ns | 110 ns | 130 ns | 95A | 20V | Single | 330W Tc | 55V | N-Channel | 5480pF @ 25V | 5m Ω @ 101A, 10V | 4V @ 250μA | 95A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3445ADV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3445advt1ge3-datasheets-6097.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 42mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | Single | 40 | 1.1W | 1 | Other Transistors | 260pF | 20 ns | 40ns | 60 ns | 80 ns | 4.4A | 8V | SILICON | 1.1W Ta | -8V | P-Channel | 42m Ω @ 5.8A, 4.5V | 1V @ 250μA | 4.4A Ta | 19nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR4292 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfu4292-datasheets-1261.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 26 Weeks | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 250V | 100W Tc | 9.3A | N-Channel | 705pF @ 25V | 345m Ω @ 5.6A, 10V | 5V @ 50μA | 9.3A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4412ADY-T1-E3 | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4412adyt1ge3-datasheets-6274.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 24mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.3W | 1 | 15 ns | 6ns | 6 ns | 26 ns | 5.8A | 20V | SILICON | 1.3W Ta | 30A | 30V | N-Channel | 24m Ω @ 8A, 10V | 1V @ 250μA (Min) | 5.8A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI4888DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4888dyt1ge3-datasheets-6431.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | Unknown | 7mOhm | 8 | No | Single | 1.6W | 1 | 8-SO | 14 ns | 10ns | 10 ns | 44 ns | 16A | 20V | 30V | 1.6W Ta | 7mOhm | 30V | N-Channel | 800 mV | 7mOhm @ 16A, 10V | 1.6V @ 250μA | 11A Ta | 24nC @ 5V | 7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7484Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf7484qtr-datasheets-8037.pdf | 8-SOIC (0.154, 3.90mm Width) | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.5W Ta | N-Channel | 3520pF @ 25V | 10m Ω @ 14A, 7V | 2V @ 250μA | 14A Ta | 100nC @ 7V | 7V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP75P05-08-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sup75p0508e3-datasheets-3242.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | No SVHC | 3 | yes | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 3 | Single | 30 | 250W | 1 | Other Transistors | Not Qualified | 13 ns | 140ns | 175 ns | 115 ns | -75A | 20V | SILICON | DRAIN | 55V | -2V | 3.7W Ta 250W Tc | TO-220AB | 240A | 0.008Ohm | 30V | P-Channel | 8500pF @ 25V | -2 V | 8m Ω @ 30A, 10V | 3V @ 250μA | 75A Tc | 225nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPW50R190CEFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/infineontechnologies-ipp50r190cexksa1-datasheets-9974.pdf | TO-247-3 | Lead Free | 3 | 6 Weeks | 3 | yes | No | 3 | Single | 127W | 1 | FET General Purpose Power | 9.5 ns | 8.5ns | 7.5 ns | 54 ns | 18.5A | 20V | 500V | SILICON | SWITCHING | 127W Tc | N-Channel | 1137pF @ 100V | 190m Ω @ 6.2A, 13V | 3.5V @ 510μA | 18.5A Tc | 47.2nC @ 10V | Super Junction | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7437PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfs7437trlpbf-datasheets-9988.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 3 | EAR99 | No | GULL WING | Single | 230W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 70ns | 53 ns | 78 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 3V | 230W Tc | 30 ns | 802 mJ | N-Channel | 7330pF @ 25V | 3 V | 1.8m Ω @ 100A, 10V | 3.9V @ 150μA | 195A Tc | 225nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI4836DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4836dyt1ge3-datasheets-6582.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 3mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.6W | 1 | FET General Purpose Power | 860pF | 35 ns | 41ns | 115 ns | 190 ns | 17A | 8V | SILICON | SWITCHING | 1.6W Ta | 12V | N-Channel | 3m Ω @ 25A, 4.5V | 400mV @ 250μA (Min) | 17A Ta | 75nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SI4404DY-T1-E3 | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4404dyt1ge3-datasheets-6289.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 6.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.6W | 1 | 2nF | 20 ns | 15ns | 40 ns | 105 ns | 23A | 20V | SILICON | 1.6W Ta | 30V | N-Channel | 1 V | 6.5m Ω @ 23A, 10V | 3V @ 250μA | 15A Ta | 55nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AOB2618L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 1 | 23A | 20V | 60V | 2.1W Ta 41.5W Tc | N-Channel | 950pF @ 30V | 19m Ω @ 20A, 10V | 2.5V @ 250μA | 7A Ta 23A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2335DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2335dst1ge3-datasheets-6121.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Unknown | 51mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 30 | 750mW | 1 | Other Transistors | 13 ns | 15ns | 15 ns | 50 ns | -4A | 8V | SILICON | 12V | 750mW Ta | -12V | P-Channel | 1225pF @ 6V | -450 mV | 51m Ω @ 4A, 4.5V | 450mV @ 250μA (Min) | 3.2A Ta | 15nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SI2305ADS-T1-E3 | Vishay Siliconix | $1.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2305adst1ge3-datasheets-0154.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 40mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 3 | Single | 30 | 1 | Other Transistors | 11ns | 11 ns | 22 ns | 4.1A | 8V | SILICON | SWITCHING | 960mW Ta 1.7W Tc | 5.4A | -8V | P-Channel | 740pF @ 4V | 40m Ω @ 4.1A, 4.5V | 800mV @ 250μA | 5.4A Tc | 15nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SI4860DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4860dyt1ge3-datasheets-6401.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.6W | 1 | FET General Purpose Powers | 4.5nF | 18 ns | 12ns | 12 ns | 46 ns | 16A | 20V | SILICON | SWITCHING | 1V | 1.6W Ta | 30V | N-Channel | 1 V | 8m Ω @ 16A, 10V | 1V @ 250μA (Min) | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI4401DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4401dyt1ge3-datasheets-6298.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 506.605978mg | No SVHC | 15.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 17 ns | 18ns | 55 ns | 122 ns | -10.5A | 20V | SILICON | 40V | 40V | -1V | 1.5W Ta | P-Channel | -1 V | 15.5m Ω @ 10.5A, 10V | 1V @ 250μA (Min) | 8.7A Ta | 50nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFH7446TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7446trpbf-datasheets-2685.pdf | 8-PowerTDFN | 40V | N-Channel | 3174pF @ 25V | 3.3m Ω @ 50A, 10V | 3.9V @ 100μA | 85A Tc | 98nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTF03N400 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtf03n400-datasheets-3089.pdf | i4-Pac™-5 (3 Leads) | 3 | yes | EAR99 | UL RECOGNIZED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 70W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 16ns | 58 ns | 86 ns | 300mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4000V | 70W Tc | 0.3A | 0.8A | 4kV | N-Channel | 435pF @ 25V | 300 Ω @ 150mA, 10V | 4V @ 250μA | 300mA Tc | 16.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SUD50P04-13L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud50p0413lge3-datasheets-4867.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 13mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 93.7mW | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 10ns | 20 ns | 50 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | -3V | 3W Ta 93.7W Tc | 50A | 80 mJ | 40V | P-Channel | 3120pF @ 25V | 13m Ω @ 30A, 10V | 3V @ 250μA | 60A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SUD50P04-15-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50p0415e3-datasheets-3027.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 26 Weeks | 1.437803g | No SVHC | 15mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 100W | 1 | Other Transistors | R-PSSO-G2 | 15 ns | 380ns | 140 ns | 75 ns | -50A | 20V | SILICON | DRAIN | 40V | -1V | 3W Ta 100W Tc | -40V | P-Channel | 5400pF @ 25V | -1 V | 15m Ω @ 30A, 10V | 1V @ 250μA (Min) | 50A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SUP70N03-09BP-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70n0309bpe3-datasheets-3111.pdf | TO-220-3 | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 93W | 1 | FET General Purpose Power | 10 ns | 8ns | 9 ns | 25 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 93W Tc | TO-220AB | 70A | 200A | 0.009Ohm | 30V | N-Channel | 1500pF @ 25V | 800 mV | 9m Ω @ 30A, 10V | 2V @ 250μA | 70A Tc | 19nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFS7440PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfs7440trlpbf-datasheets-4846.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 3 | EAR99 | No | GULL WING | Single | 208W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 68ns | 68 ns | 115 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 3V | 208W Tc | 24 ns | 208A | 772A | 0.0025Ohm | 40V | N-Channel | 4730pF @ 25V | 3 V | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 120A Tc | 135nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SUD35N05-26L-E3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud35n0526le3-datasheets-2955.pdf | 55V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | Lead Free | No SVHC | 20mOhm | 3 | No | Single | 50W | 1 | TO-252, (D-Pak) | 885pF | 5 ns | 18ns | 100 ns | 20 ns | 35A | 20V | 55V | 55V | 1V | 7.5W Ta 50W Tc | 20mOhm | 55V | N-Channel | 885pF @ 25V | 1 V | 20mOhm @ 20A, 10V | 1V @ 250μA (Min) | 35A Tc | 13nC @ 5V | 20 mΩ | 4.5V 10V | ±20V |
