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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP60R1K4C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-ipp60r1k4c6xksa1-datasheets-8439.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 12 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 8 ns | 40 ns | 3.2A | 30V | 600V | 28.4W Tc | 650V | N-Channel | 200pF @ 100V | 1.4 Ω @ 1.1A, 10V | 3.5V @ 90μA | 3.2A Tc | 1.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF8327STR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf8327strpbf-datasheets-1858.pdf | DirectFET™ Isometric SQ | 30V | 2.2W Ta 42W Tc | N-Channel | 1430pF @ 15V | 7.3m Ω @ 14A, 10V | 2.4V @ 25μA | 14A Ta 60A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLH5036TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/infineontechnologies-irlh5036tr2pbf-datasheets-0624.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5.0038mm | Lead Free | 5 | No SVHC | 5.5MOhm | 8 | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | 260 | 40 | 160W | 1 | FET General Purpose Power | R-PDSO-N5 | 23 ns | 48ns | 15 ns | 28 ns | 100A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1V | 3.6W Ta 160W Tc | 20A | 400A | 60V | N-Channel | 5360pF @ 25V | 1 V | 4.4m Ω @ 50A, 10V | 2.5V @ 150μA | 20A Ta 100A Tc | 90nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||
| IPU50R1K4CEBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu50r1k4cebkma1-datasheets-8518.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.41mm | 3 | no | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Powers | 6.5 ns | 6ns | 30 ns | 23 ns | 3.1A | 30V | 500V | 25W Tc | N-Channel | 178pF @ 100V | 1.4 Ω @ 900mA, 13V | 3.5V @ 70μA | 3.1A Tc | 8.2nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| MKE11R600DCGFC | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-mke11r600dcgfc-datasheets-8341.pdf | ISOPLUSi5-Pak™ | 5 | 6.500007g | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | 5 | Single | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T5 | 6ns | 4 ns | 75 ns | 15A | 20V | SILICON | ISOLATED | SWITCHING | 0.165Ohm | 522 mJ | 600V | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 15A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP65R099C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipa65r099c6xksa1-datasheets-8309.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 10.6 ns | 9ns | 6 ns | 77 ns | 38A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 278W Tc | TO-220AB | 115A | 0.099Ohm | 845 mJ | N-Channel | 2780pF @ 100V | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 38A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AOB12N60FDL | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | FET General Purpose Power | 12A | Single | 600V | 278W Tc | N-Channel | 2010pF @ 25V | 650m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT12N140 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtt12n140-datasheets-8289.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 150°C | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1400V | 1400V | 890W Tc | 40A | 2Ohm | 750 mJ | N-Channel | 3720pF @ 25V | 2 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 106nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPA65R099C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipa65r099c6xksa1-datasheets-8309.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 35W | 1 | 10.6 ns | 9ns | 6 ns | 77 ns | 38A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 0.099Ohm | 845 mJ | N-Channel | 2780pF @ 100V | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 38A Tc | 127nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AOT10T60L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot430-datasheets-0079.pdf | TO-220-3 | FET General Purpose Power | 10A | Single | 600V | 208W Tc | N-Channel | 1346pF @ 100V | 700m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU60R2K0C6BKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipu60r2k0c6akma1-datasheets-8413.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | No SVHC | 1.8Ohm | 3 | no | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 22.3W Tc | 6A | 11 mJ | N-Channel | 140pF @ 100V | 2 Ω @ 760mA, 10V | 3.5V @ 60μA | 2.4A Tc | 6.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI3460DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3460dvt1ge3-datasheets-6204.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 990.6μm | 1.65mm | Lead Free | 6 | 19.986414mg | 27mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.1W | 1 | FET General Purpose Power | 15 ns | 30ns | 30 ns | 70 ns | 6.8A | 8V | SILICON | 1.1W Ta | 20V | N-Channel | 27m Ω @ 5.1A, 4.5V | 450mV @ 1mA (Min) | 5.1A Ta | 20nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| MCP87018T-U/MF | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/microchiptechnology-mcp87018tumf-datasheets-3781.pdf | 8-PowerTDFN | 5mm | 1mm | 6mm | Lead Free | 3 Weeks | No SVHC | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | YES | 260 | MCP87018 | Single | 40 | 2.2W | FET General Purpose Powers | 6.53 ns | 28.3ns | 28.05 ns | 26.35 ns | 100A | 10V | 2.2W Ta | 25V | N-Channel | 2925pF @ 12.5V | 1.3 V | 1.9m Ω @ 25A, 10V | 1.6V @ 250μA | 100A Tc | 37nC @ 4.5V | 3.3V 10V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||
| DMG9N65CTI | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg9n65cti-datasheets-3795.pdf | TO-220-3 Full Pack, Isolated Tab | 16.07mm | 16.07mm | 4.9mm | 3 | 2.299997g | No SVHC | 3 | no | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 39 ns | 29ns | 28 ns | 122 ns | 9A | 30V | SILICON | SWITCHING | 650V | 650V | 13W Tc | TO-220AB | 9A | N-Channel | 2310pF @ 25V | 1.3 Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IRFHM831TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-irfhm831tr2pbf-datasheets-5015.pdf | 8-PowerTDFN | 3.2766mm | 990.6μm | 3.3mm | Lead Free | 5 | 13 Weeks | No SVHC | 12.6MOhm | 8 | EAR99 | No | DUAL | Single | 2.5W | 1 | FET General Purpose Power | S-PDSO-N5 | 6.9 ns | 12ns | 4.7 ns | 6.2 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 2.5W Ta 27W Tc | 40A | 96A | 50 mJ | 30V | N-Channel | 1050pF @ 25V | 1.8 V | 7.8m Ω @ 12A, 10V | 2.35V @ 25μA | 14A Ta 40A Tc | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| MCP87055T-U/LC | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/microchiptechnology-mcp87055tulc-datasheets-3639.pdf | 8-PowerTDFN | 3.3mm | 1mm | 3.3mm | Lead Free | 15 Weeks | No SVHC | 7MOhm | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | YES | 260 | MCP87055 | Single | 40 | 1.8W | FET General Purpose Power | 4.5 ns | 11ns | 4.6 ns | 9 ns | 60A | 10V | 1.8W Ta | 25V | N-Channel | 890pF @ 12.5V | 1.35 V | 6m Ω @ 20A, 10V | 1.7V @ 250μA | 60A Tc | 14nC @ 4.5V | 4.5V 10V | +10V, -8V | |||||||||||||||||||||||||||||||||||||||
| IRFH5206TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-irfh5206tr2pbf-datasheets-0576.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | No SVHC | 6.7MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 6.4 ns | 11ns | 8.2 ns | 22 ns | 89A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 3.6W Ta 100W Tc | 350A | 60V | N-Channel | 2490pF @ 25V | 6.7m Ω @ 50A, 10V | 4V @ 100μA | 16A Ta 89A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| MCP87130T-U/LC | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/microchiptechnology-mcp87130tumf-datasheets-1570.pdf | 8-PowerTDFN | 3.3mm | 1mm | 3.3mm | Lead Free | 11 Weeks | No SVHC | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | YES | 260 | MCP87130 | Single | 40 | 1.8W | FET General Purpose Powers | 2.2 ns | 5.4ns | 2.1 ns | 4.2 ns | 42A | 10V | 1.7W Ta | 43A | 25V | N-Channel | 400pF @ 12.5V | 1.35 V | 13.5m Ω @ 10A, 10V | 1.7V @ 250μA | 43A Tc | 8nC @ 4.5V | 3.3V 10V | +10V, -8V | |||||||||||||||||||||||||||||||||||||||
| MCP87050T-U/MF | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/microchiptechnology-mcp87050tumf-datasheets-3688.pdf | 8-PowerTDFN | 5mm | 1mm | 6mm | Lead Free | 5 Weeks | No SVHC | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | YES | 260 | MCP87050 | Single | 40 | 2.2W | FET General Purpose Power | 5 ns | 18ns | 11 ns | 100A | 10V | 2.2W Ta | 25V | N-Channel | 1040pF @ 12.5V | 1.3 V | 5m Ω @ 20A, 10V | 1.6V @ 250μA | 100A Tc | 15nC @ 4.5V | 4.5V 10V | +10V, -8V | |||||||||||||||||||||||||||||||||||||||||
| SUD50N06-07L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0607lge3-datasheets-4822.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 4 | Single | 30 | 136W | 1 | FET General Purpose Powers | 15 ns | 13ns | 14 ns | 62 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 136W Tc | 50A | 60V | N-Channel | 5800pF @ 25V | 7.4m Ω @ 20A, 10V | 3V @ 250μA | 96A Tc | 144nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| MCP87030T-U/MF | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/microchiptechnology-mcp87030tumf-datasheets-3699.pdf | 8-PowerTDFN | 5mm | 1mm | 6mm | Lead Free | No SVHC | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | YES | 260 | MCP87030 | 40 | 2.2W | FET General Purpose Powers | 5 ns | 17ns | 16 ns | 14 ns | 100A | 10V | Single | 1.3V | 2.2W Ta | 25V | N-Channel | 1635pF @ 12.5V | 1.3 V | 3.5m Ω @ 20A, 10V | 1.6V @ 250μA | 100A Tc | 22nC @ 4.5V | 4.5V 10V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||
| AUIRF6218STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf6218s-datasheets-3388.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 9 Weeks | EAR99 | AVALANCHE RATED | compliant | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 250W Tc | 27A | 110A | 0.15Ohm | 210 mJ | P-Channel | 2210pF @ 25V | 150m Ω @ 16A, 10V | 5V @ 250μA | 27A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| UPA2766T1A-E2-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2766t1ae2ay-datasheets-3582.pdf | 8-PowerVDFN | Lead Free | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 8 | NOT SPECIFIED | FET General Purpose Power | 130A | Single | 30V | 1.5W Ta 83W Tc | N-Channel | 10850pF @ 10V | 1.82m Ω @ 39A, 4.5V | 130A Tc | 257nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7434GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-220-3 | 18 Weeks | 294W | TO-220-3 | 10.82nF | 195A | 40V | N-Channel | 10820pF @ 25V | 1.6mOhm @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 324nC @ 10V | 1.6 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN023-40YLCX | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | SC-100, SOT-669 | 4 | 40V | 25W Tc | N-Channel | 520pF @ 20V | 23m Ω @ 5A, 10V | 1.95V @ 1mA | 24A Tc | 8.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB417AEDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib417aedkt1ge3-datasheets-3636.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 32mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 1 | 2.4W | 1 | Other Transistors | S-PDSO-N3 | 19 ns | 27ns | 29 ns | 32 ns | 9A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 13W Tc | 9A | 8V | P-Channel | 878pF @ 4V | 32m Ω @ 3A, 4.5V | 1V @ 250μA | 9A Tc | 18.5nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||
| IPD035N06L3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd035n06l3gatma1-datasheets-3439.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 167W Tc | TO-252AA | 162A | 165 mJ | N-Channel | 13000pF @ 30V | 3.5m Ω @ 90A, 10V | 2.2V @ 93μA | 90A Tc | 79nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPD30N06S2L23ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd30n06s2l23atma1-datasheets-3443.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 100W Tc | 30A | 120A | 0.03Ohm | 150 mJ | N-Channel | 1091pF @ 25V | 23m Ω @ 22A, 10V | 2V @ 50μA | 30A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD25CN10NGBUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd25cn10ngbuma1-datasheets-3459.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 71W Tc | 35A | 140A | 0.025Ohm | 65 mJ | N-Channel | 2070pF @ 50V | 25m Ω @ 35A, 10V | 4V @ 39μA | 35A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD30N06S2L-13 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd30n06s2l13-datasheets-3471.pdf&product=infineontechnologies-ipd30n06s2l13-6925838 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 136W Tc | 30A | 200A | 0.017Ohm | 240 mJ | N-Channel | 1800pF @ 25V | 13m Ω @ 30A, 10V | 2V @ 80μA | 30A Tc | 69nC @ 10V | 4.5V 10V | ±20V |
