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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPD035N06L3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd035n06l3gatma1-datasheets-3439.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 167W Tc | TO-252AA | 162A | 165 mJ | N-Channel | 13000pF @ 30V | 3.5m Ω @ 90A, 10V | 2.2V @ 93μA | 90A Tc | 79nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD30N06S2L23ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd30n06s2l23atma1-datasheets-3443.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 100W Tc | 30A | 120A | 0.03Ohm | 150 mJ | N-Channel | 1091pF @ 25V | 23m Ω @ 22A, 10V | 2V @ 50μA | 30A Tc | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD25CN10NGBUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd25cn10ngbuma1-datasheets-3459.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 71W Tc | 35A | 140A | 0.025Ohm | 65 mJ | N-Channel | 2070pF @ 50V | 25m Ω @ 35A, 10V | 4V @ 39μA | 35A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD30N06S2L-13 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd30n06s2l13-datasheets-3471.pdf&product=infineontechnologies-ipd30n06s2l13-6925838 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 136W Tc | 30A | 200A | 0.017Ohm | 240 mJ | N-Channel | 1800pF @ 25V | 13m Ω @ 30A, 10V | 2V @ 80μA | 30A Tc | 69nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFU3607-701PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu3607pbf-datasheets-2133.pdf | TO-252-4, DPak (3 Leads + Tab) | 75V | 140W Tc | N-Channel | 3070pF @ 50V | 9m Ω @ 46A, 10V | 4V @ 100μA | 56A Tc | 84nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1011X-T1-GE3 | Vishay Siliconix | $1.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1011xt1ge3-datasheets-3456.pdf | SC-89, SOT-490 | Lead Free | 3 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | 190mW | 1 | 480mA | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 190mW Ta | 0.64Ohm | P-Channel | 62pF @ 6V | 640m Ω @ 400mA, 4.5V | 800mV @ 250μA | 4nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||
| HUF76633P3-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | TO-220-3 | 3 | yes | ULTRA LOW RESISTANCE | compliant | e3 | TIN | NO | SINGLE | 260 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 145W Tc | TO-220AB | 38A | 0.035Ohm | N-Channel | 1820pF @ 25V | 35m Ω @ 39A, 10V | 3V @ 250μA | 39A Tc | 67nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPD07N20GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spd07n20gbtma1-datasheets-3513.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | Not Halogen Free | SINGLE | GULL WING | 260 | 4 | 40 | 40W | 1 | R-PSSO-G2 | 10 ns | 40ns | 30 ns | 55 ns | 7A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | 40W Tc | 7A | 28A | 0.4Ohm | N-Channel | 530pF @ 25V | 400m Ω @ 4.5A, 10V | 4V @ 1mA | 7A Tc | 31.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TK16J60W,S1VQ | Toshiba Semiconductor and Storage | $6.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-3P-3, SC-65-3 | 1.35nF | 16 Weeks | Single | 130W | 25ns | 5 ns | 100 ns | 15.8A | 30V | 130W Tc | 600V | N-Channel | 1350pF @ 300V | 190m Ω @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7860DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7860dpt1ge3-datasheets-3692.pdf | PowerPAK® SO-8 | 5.969mm | 1.0668mm | 5.0038mm | Lead Free | 5 | No SVHC | 8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 3.45nF | 18 ns | 12ns | 12 ns | 46 ns | 18A | 20V | 30V | SILICON | DRAIN | SWITCHING | 3V | 1.8W Ta | 50A | 45 mJ | 30V | N-Channel | 3 V | 8m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| GA06JT12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga06jt12247-datasheets-6286.pdf | TO-247-3 | 18 Weeks | 38.000013g | 3 | 146W | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 6A | 1200V | 220m Ω @ 6A | 6A Tc 90°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF5210S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf5210s-datasheets-3307.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.1W Ta 170W Tc | 38A | 140A | 0.06Ohm | 120 mJ | P-Channel | 2780pF @ 25V | 60m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD053N08N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd053n08n3gatma1-datasheets-0586.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 150W Tc | TO-252AA | 90A | 360A | 0.0053Ohm | 190 mJ | N-Channel | 4750pF @ 40V | 5.3m Ω @ 90A, 10V | 3.5V @ 90μA | 90A Tc | 69nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFB7446GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7446gpbf-datasheets-3314.pdf | TO-220-3 | 14 Weeks | 3 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 120A | 40V | 99W Tc | N-Channel | 3183pF @ 25V | 3.3m Ω @ 70A, 10V | 3.9V @ 100μA | 120A Tc | 93nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4332-203PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfp4332pbf-datasheets-2000.pdf | TO-247-3 | TO-247AC | 250V | 360W Tc | N-Channel | 5860pF @ 25V | 33mOhm @ 35A, 10V | 5V @ 250μA | 57A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLR024Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-auirlr024z-datasheets-3323.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 35W Tc | TO-252AA | 16A | 64A | 0.058Ohm | 25 mJ | N-Channel | 380pF @ 25V | 58m Ω @ 9.6A, 10V | 3V @ 250μA | 16A Tc | 9.9nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRFU3607 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/infineontechnologies-auirfu3607-datasheets-3419.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 11 Weeks | 3 | EAR99 | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 1 | Single | 30 | 140W | 1 | FET General Purpose Power | 16 ns | 110ns | 96 ns | 43 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 75V | 75V | 140W Tc | 56A | 0.009Ohm | N-Channel | 3070pF @ 50V | 9m Ω @ 46A, 10V | 4V @ 100μA | 56A Tc | 84nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFB7437GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 | 230W | TO-220AB | 7.33nF | 195A | 40V | N-Channel | 7330pF @ 25V | 2mOhm @ 100A, 10V | 3.9V @ 150μA | 195A Tc | 225nC @ 10V | 2 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6534 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon6534-datasheets-2633.pdf | 8-PowerSMD, Flat Leads | 30A | 30V | 4.1W Ta 25W Tc | N-Channel | 951pF @ 15V | 8m Ω @ 20A, 10V | 2.6V @ 250μA | 20A Ta 30A Tc | 22.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLU024Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-auirlu024z-datasheets-3340.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 13 Weeks | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 35W | 1 | FET General Purpose Power | 16A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 35W Tc | 64A | 0.058Ohm | 25 mJ | N-Channel | 380pF @ 25V | 58m Ω @ 9.6A, 10V | 3V @ 250μA | 16A Tc | 9.9nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IRFHP8334TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 2013 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7737L2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | DirectFET™ Isometric L6 | DIRECTFET L6 | 40V | 3.3W Ta 83W Tc | N-Channel | 5469pF @ 25V | 1.9mOhm @ 94A, 10V | 4V @ 150μA | 31A Ta 156A Tc | 134nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF4905S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-auirf4905s-datasheets-3358.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | 42A | 280A | 0.02Ohm | 140 mJ | P-Channel | 3500pF @ 25V | 20m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRLL024Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirll024ztr-datasheets-9900.pdf | TO-261-4, TO-261AA | EAR99 | compliant | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 55V | 1W Ta | 5A | N-Channel | 380pF @ 25V | 60m Ω @ 3A, 10V | 3V @ 250μA | 5A Ta | 11nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3607TRL701P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu3607pbf-datasheets-2133.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 9mOhm | IPAK (TO-251) | 3.07nF | 56A | 75V | 140W Tc | N-Channel | 3070pF @ 50V | 9mOhm @ 46A, 10V | 4V @ 100μA | 56A Tc | 84nC @ 10V | 9 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHP8321TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 2013 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4510GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb4510gpbf-datasheets-3382.pdf | TO-220-3 | 3 | 140W | 1 | TO-220AB | 3.18nF | 62A | 20V | 100V | 140W Tc | N-Channel | 3180pF @ 50V | 13.5mOhm @ 37A, 10V | 4V @ 100μA | 62A Tc | 87nC @ 10V | 13.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF6218S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf6218s-datasheets-3388.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 3 | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 250W | 1 | Other Transistors | R-PSSO-G2 | 21 ns | 70ns | 30 ns | 35 ns | 27A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 250W Tc | -150V | P-Channel | 2210pF @ 25V | 150m Ω @ 16A, 10V | 5V @ 250μA | 27A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF7738L2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | DirectFET™ Isometric L6 | 40V | 3.3W Ta 94W Tc | N-Channel | 7471pF @ 25V | 1.6m Ω @ 109A, 10V | 4V @ 250μA | 35A Ta 184A Tc | 194nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLL2705 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirll2705tr-datasheets-4936.pdf | TO-261-4, TO-261AA | EAR99 | compliant | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 55V | 1W Ta | 5.2A | N-Channel | 870pF @ 25V | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 5.2A Ta | 48nC @ 10V | 4V 10V | ±16V |
