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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSC046N10NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-bsc046n10ns3gatma1-datasheets-8360.pdf | 8-PowerTDFN | Contains Lead | 5 | 16 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 156W | 1 | FET General Purpose Power | R-PDSO-F5 | 14ns | 17A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 156W Tc | 400A | 0.0046Ohm | 350 mJ | 100V | N-Channel | 4500pF @ 50V | 4.6m Ω @ 50A, 10V | 3.5V @ 120μA | 17A Ta 100A Tc | 63nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
| NX3008NBKT,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/nxpusainc-nx3008nbkt115-datasheets-8795.pdf | SC-75, SOT-416 | 3 | 2013-06-14 00:00:00 | 30V | 250mW Ta 770mW Tc | N-Channel | 50pF @ 15V | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 350mA Ta | 0.68nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6770T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Power | Not Qualified | S-XSFM-P3 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 500V | 500V | 4W Ta 150W Tc | 0.5Ohm | N-Channel | 500m Ω @ 12A, 10V | 4V @ 250μA | 12A Ta | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6764T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-204AE | 3 | EAR99 | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Power | Not Qualified | S-XSFM-P3 | 38A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 100V | 100V | 4W Ta 150W Tc | TO-254AA | 0.065Ohm | N-Channel | 65m Ω @ 38A, 10V | 4V @ 250μA | 38A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NX3020NAKT,115 | NXP USA Inc. | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | SC-75, SOT-416 | 3 | 30V | 230mW Ta 1.06W Tc | N-Channel | 13pF @ 10V | 4.5 Ω @ 100mA, 10V | 1.5V @ 250μA | 180mA Ta | 0.44nC @ 4.5V | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR7843CTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineon-irlr7843ctrpbf-datasheets-9202.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | 3 | No | Single | 140W | D-Pak | 4.38nF | 25 ns | 42ns | 19 ns | 34 ns | 161A | 20V | 30V | 140W Tc | 3.3mOhm | 30V | N-Channel | 4380pF @ 15V | 3.3mOhm @ 15A, 10V | 2.3V @ 250μA | 161A Tc | 50nC @ 4.5V | 3.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPI65R150CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r150cfdatma1-datasheets-9715.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 16 Weeks | 3 | yes | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 12.4 ns | 7.6ns | 5.6 ns | 52.8 ns | 22.4A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 195.3W Tc | 72A | 0.15Ohm | 614 mJ | 700V | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PMF250XN,115 | NXP USA Inc. | $0.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | SC-70, SOT-323 | 3 | 2013-06-14 00:00:00 | 30V | 275mW Ta 1.065W Tc | N-Channel | 50pF @ 15V | 300m Ω @ 900mA, 4.5V | 1.5V @ 250μA | 900mA Ta | 1.1nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMF87EN,115 | NXP USA Inc. | $0.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmf87en115-datasheets-8848.pdf | SC-70, SOT-323 | 3 | 30V | 275mW Ta | N-Channel | 135pF @ 15V | 80m Ω @ 1.7A, 10V | 2.5V @ 250μA | 1.7A Ta | 4.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8308MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf8308mtrpbf-datasheets-4769.pdf | DirectFET™ Isometric MX | 30V | 2.8W Ta 89W Tc | N-Channel | 4404pF @ 15V | 2.5m Ω @ 27A, 10V | 2.35V @ 100μA | 27A Ta 150A Tc | 42nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMN15UN,115 | NXP USA Inc. | $0.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmn15un115-datasheets-8865.pdf | SC-74, SOT-457 | 30V | N-Channel | 8A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002E | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | /files/panasonicelectroniccomponents-2n7002e-datasheets-8674.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60V | 350mW Ta | N-Channel | 40pF @ 10V | 3 Ω @ 100mA, 10V | 3V @ 250μA | 300mA Ta | 0.8nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R250C6XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd65r250c6xtma1-datasheets-8291.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSSO-G2 | 13 ns | 11ns | 12 ns | 100 ns | 16.1A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 208.3W Tc | 46A | 0.25Ohm | 290 mJ | 700V | N-Channel | 950pF @ 100V | 250m Ω @ 4.4A, 10V | 3.5V @ 400μA | 16.1A Tc | 44nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| PMPB40SNA,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/nexperiausainc-pmpb40sna115-datasheets-8544.pdf | 6-UDFN Exposed Pad | 6 | Tin | 6 | 1.7W | 1 | 9 ns | 23ns | 12 ns | 12.9A | 20V | 60V | 1.7W Ta 12.5W Tc | N-Channel | 612pF @ 30V | 43m Ω @ 4.8A, 10V | 3V @ 250μA | 12.9A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU60R950C6BKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipu60r950c6bkma1-datasheets-8567.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.41mm | Contains Lead | 3 | 3 | no | EAR99 | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 37W | 1 | 10 ns | 8ns | 13 ns | 60 ns | 4.4A | 20V | 600V | SILICON | SWITCHING | 37W Tc | 0.95Ohm | 46 mJ | 650V | N-Channel | 280pF @ 100V | 950m Ω @ 1.5A, 10V | 3.5V @ 130μA | 4.4A Tc | 1.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFH8321TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfh8321trpbf-datasheets-8547.pdf | 8-TQFN Exposed Pad | Lead Free | 16 Weeks | 8 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 3.4W | FET General Purpose Power | 14 ns | 20ns | 6.8 ns | 12 ns | 21A | 20V | 3.4W Ta 54W Tc | 30V | N-Channel | 2600pF @ 10V | 4.9m Ω @ 20A, 10V | 2V @ 50μA | 21A Ta 83A Tc | 59nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF6728MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6728mtrpbf-datasheets-5770.pdf | DirectFET™ Isometric MX | 5.45mm | 530μm | 5.05mm | No SVHC | 7 | No | 75W | 1 | DIRECTFET™ MX | 4.11nF | 16 ns | 34ns | 19 ns | 19 ns | 140A | 20V | 30V | 1.8V | 2.1W Ta 75W Tc | 3.6mOhm | 30V | N-Channel | 4110pF @ 15V | 1.8 V | 2.5mOhm @ 23A, 10V | 2.35V @ 100μA | 23A Ta 140A Tc | 42nC @ 4.5V | 2.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF8304MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf8304mtr1pbf-datasheets-8530.pdf | DirectFET™ Isometric MX | 7 | No | 2.8W | 1 | DIRECTFET™ MX | 4.7nF | 16 ns | 22ns | 13 ns | 19 ns | 170A | 20V | 30V | 2.8W Ta 100W Tc | 3.2mOhm | 30V | N-Channel | 4700pF @ 15V | 2.2mOhm @ 28A, 10V | 2.35V @ 100μA | 28A Ta 170A Tc | 42nC @ 4.5V | 2.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF6892STR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6892str1pbf-datasheets-8406.pdf | DirectFET™ Isometric S3C | 25V | 2.1W Ta 42W Tc | N-Channel | 2510pF @ 13V | 1.7m Ω @ 28A, 10V | 2.1V @ 50μA | 28A Ta 125A Tc | 25nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6768T1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-2n6768t1-datasheets-8627.pdf | TO-254-3, TO-254AA (Straight Leads) | 3 | EAR99 | SINGLE | PIN/PEG | 3 | 1 | FET General Purpose Power | Not Qualified | S-XSFM-P3 | 14A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 400V | 400V | 4W Ta 150W Tc | 0.3Ohm | N-Channel | 400m Ω @ 14A, 10V | 4V @ 250μA | 14A Ta | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPI65R099C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipa65r099c6xksa1-datasheets-8309.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 12 Weeks | 3 | yes | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 10.6 ns | 9ns | 6 ns | 77 ns | 38A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 278W Tc | 115A | 0.099Ohm | 845 mJ | N-Channel | 2780pF @ 100V | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 38A Tc | 127nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AOTF10T60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aotf7t60pl-datasheets-2991.pdf | TO-220-3 Full Pack | FET General Purpose Power | 10A | Single | 600V | 43W Tc | N-Channel | 1346pF @ 100V | 700m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8302MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf8302mtrpbf-datasheets-1997.pdf | DirectFET™ Isometric MX | DIRECTFET™ MX | 30V | 2.8W Ta 104W Tc | N-Channel | 6030pF @ 15V | 1.8mOhm @ 31A, 10V | 2.35V @ 150μA | 31A Ta 190A Tc | 53nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLMS2002GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlms2002trpbf-datasheets-3937.pdf | SOT-23-6 | 2.9972mm | 1.2954mm | 1.75mm | 6 | No | Single | 2W | Micro6™(SOT23-6) | 1.31nF | 8.5 ns | 11ns | 16 ns | 36 ns | 6.5A | 12V | 20V | 2W Ta | 30mOhm | 20V | N-Channel | 1310pF @ 15V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250μA | 6.5A Ta | 22nC @ 5V | 30 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| PMPB16XN,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | 6-UDFN Exposed Pad | 6 | e3 | TIN | IEC-60134 | YES | DUAL | NO LEAD | 6 | 1 | FET General Purpose Power | S-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.7W Ta 12.5W Tc | 7.2A | 28A | 0.021Ohm | N-Channel | 775pF @ 15V | 21m Ω @ 7.2A, 4.5V | 1.5V @ 250μA | 7.2A Ta | 10.8nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF8327STR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf8327strpbf-datasheets-1858.pdf | DirectFET™ Isometric SQ | 30V | 2.2W Ta 42W Tc | N-Channel | 1430pF @ 15V | 7.3m Ω @ 14A, 10V | 2.4V @ 25μA | 14A Ta 60A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLH5036TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/infineontechnologies-irlh5036tr2pbf-datasheets-0624.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5.0038mm | Lead Free | 5 | No SVHC | 5.5MOhm | 8 | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | 260 | 40 | 160W | 1 | FET General Purpose Power | R-PDSO-N5 | 23 ns | 48ns | 15 ns | 28 ns | 100A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1V | 3.6W Ta 160W Tc | 20A | 400A | 60V | N-Channel | 5360pF @ 25V | 1 V | 4.4m Ω @ 50A, 10V | 2.5V @ 150μA | 20A Ta 100A Tc | 90nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||
| IPU50R1K4CEBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu50r1k4cebkma1-datasheets-8518.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.41mm | 3 | no | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 25W | 1 | FET General Purpose Powers | 6.5 ns | 6ns | 30 ns | 23 ns | 3.1A | 30V | 500V | 25W Tc | N-Channel | 178pF @ 100V | 1.4 Ω @ 900mA, 13V | 3.5V @ 70μA | 3.1A Tc | 8.2nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF6893MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6893mtrpbf-datasheets-9496.pdf | DirectFET™ Isometric MX | 25V | 2.1W Ta 69W Tc | N-Channel | 3480pF @ 13V | 1.6m Ω @ 29A, 10V | 2.1V @ 100μA | 29A Ta 168A Tc | 38nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU50R3K0CEBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-ipd50r3k0cebtma1-datasheets-2402.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.41mm | Contains Lead | 3 | 3 | no | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 7.3 ns | 5.8ns | 49 ns | 23 ns | 1.7A | 20V | 500V | SILICON | SWITCHING | 18W Tc | 4.1A | 3Ohm | 18 mJ | 550V | N-Channel | 84pF @ 100V | 3 Ω @ 400mA, 13V | 3.5V @ 30μA | 1.7A Tc | 4.3nC @ 10V | 13V | ±20V |
