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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDMS8570SDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | /files/onsemiconductor-fdms8570sdc-datasheets-2932.pdf | 8-PowerTDFN | 5 | 90mg | No SVHC | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 59W | 1 | FET General Purpose Power | R-PDSO-F5 | 11 ns | 4ns | 3 ns | 33 ns | 60A | 12V | SILICON | DRAIN | SWITCHING | 1.5V | 3.3W Ta 59W Tc | MO-240AA | 100A | 45 mJ | 25V | N-Channel | 2825pF @ 13V | 2.8m Ω @ 28A, 10V | 2.2V @ 1mA | 28A Ta 60A Tc | 42nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| IRFS7440PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfs7440trlpbf-datasheets-4846.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 3 | EAR99 | No | GULL WING | Single | 208W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 68ns | 68 ns | 115 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 3V | 208W Tc | 24 ns | 208A | 772A | 0.0025Ohm | 40V | N-Channel | 4730pF @ 25V | 3 V | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 120A Tc | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUD35N05-26L-E3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud35n0526le3-datasheets-2955.pdf | 55V | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | Lead Free | No SVHC | 20mOhm | 3 | No | Single | 50W | 1 | TO-252, (D-Pak) | 885pF | 5 ns | 18ns | 100 ns | 20 ns | 35A | 20V | 55V | 55V | 1V | 7.5W Ta 50W Tc | 20mOhm | 55V | N-Channel | 885pF @ 25V | 1 V | 20mOhm @ 20A, 10V | 1V @ 250μA (Min) | 35A Tc | 13nC @ 5V | 20 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SUD23N06-31L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud23n0631lt4e3-datasheets-7979.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | 1.437803g | No SVHC | 31mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 15ns | 25 ns | 30 ns | 23A | 20V | 60V | SILICON | DRAIN | SWITCHING | 2V | 3W Ta 100W Tc | 50A | 20 mJ | 60V | N-Channel | 670pF @ 25V | 2 V | 31m Ω @ 15A, 10V | 3V @ 250μA | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIR640DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir640dpt1ge3-datasheets-2960.pdf | PowerPAK® SO-8 | 5 | yes | EAR99 | YES | DUAL | C BEND | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 6.25W Ta 104W Tc | 60A | 100A | 0.0022Ohm | 80 mJ | N-Channel | 4930pF @ 20V | 1.7m Ω @ 20A, 10V | 2.3V @ 250μA | 60A Tc | 113nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7820PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-irf7820trpbf-datasheets-6687.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | No SVHC | 8 | EAR99 | No | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 7.1 ns | 3.2ns | 12 ns | 14 ns | 3.7A | 20V | SILICON | SWITCHING | 4V | 2.5W Ta | 200V | N-Channel | 1750pF @ 100V | 4 V | 78m Ω @ 2.2A, 10V | 5V @ 100μA | 3.7A Ta | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SUD40N04-10A-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sud40n0410ae3-datasheets-2968.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | Lead Free | 2 | 10mOhm | 2 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 71W | 1 | FET General Purpose Power | 14 ns | 7.5ns | 14 ns | 30 ns | 40A | 20V | SILICON | DRAIN | 71W Tc | 40V | N-Channel | 1700pF @ 25V | 10m Ω @ 40A, 10V | 3V @ 250μA | 40A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7440TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7440tr2pbf-datasheets-3005.pdf | 8-PowerTDFN | 8-PQFN (5x6) | 40V | N-Channel | 4574pF @ 25V | 2.4mOhm @ 50A, 10V | 3.9V @ 100μA | 85A Tc | 138nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP75N03-04-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sup75n0304e3-datasheets-3010.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | Single | 187W | 1 | FET General Purpose Power | 20 ns | 40ns | 95 ns | 190 ns | 75A | 20V | SILICON | DRAIN | 3.7W Ta 187W Tc | TO-220AB | 250A | 0.006Ohm | 280 mJ | 30V | N-Channel | 10742pF @ 25V | 4m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 250nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-09P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sud50n0309pge3-datasheets-3255.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 1.437803g | 9.5MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 7.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 15ns | 8 ns | 22 ns | 63A | 20V | SILICON | DRAIN | SWITCHING | 7.5W Ta 65.2W Tc | 50A | 50A | 30V | N-Channel | 2200pF @ 25V | 9.5m Ω @ 20A, 10V | 3V @ 250μA | 63A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SUM110N05-06L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | Digi-Reel® | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110n0506le3-datasheets-3043.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.414mm | 4.826mm | 9.652mm | Lead Free | 2 | No SVHC | 6mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 36W | GULL WING | 4 | Single | 3.7W | 1 | FET General Purpose Powers | R-PSSO-G2 | 15 ns | 15ns | 15 ns | 35 ns | 110A | 20V | 55V | SWITCHING | 70 ns | 240A | 55V | N-Channel | 3300pF @ 25V | 3 V | 6m Ω @ 30A, 10V | 3V @ 250μA | 110A Tc | 100nC @ 10V | ||||||||||||||||||||||||||||||||||||||||
| IXTA02N450HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt02n450hv-datasheets-2437.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | e3 | Matte Tin (Sn) | Single | 113W | 1 | FET General Purpose Power | 48ns | 143 ns | 28 ns | 200mA | 20V | 4500V | 113W Tc | 0.2A | 4.5kV | N-Channel | 256pF @ 25V | 750 Ω @ 10mA, 10V | 6.5V @ 250μA | 200mA Tc | 10.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R190CE | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp50r190cexksa1-datasheets-9974.pdf | TO-220-3 Full Pack | 3 | yes | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 32W Tc | TO-220AB | 63A | 0.19Ohm | 339 mJ | N-Channel | 1137pF @ 100V | 190m Ω @ 6.2A, 13V | 3.5V @ 510μA | 18.5A Tc | 47.2nC @ 10V | Super Junction | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFME3N311ZT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-fdfme3n311zt-datasheets-2793.pdf | 6-UFDFN Exposed Pad | 1.6mm | 550μm | 1.6mm | 6 | 25.2mg | No SVHC | 6 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 1.1W | 1 | FET General Purpose Power | 6 ns | 16ns | 2.8 ns | 22 ns | 1.6A | 12V | SILICON | DRAIN | SWITCHING | 1V | 1.4W Ta | 0.299Ohm | 30V | N-Channel | 75pF @ 15V | 1 V | 299m Ω @ 1.6A, 4.5V | 1.5V @ 250μA | 1.8A Ta | 1.4nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| 2N7640-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | Non-RoHS Compliant | 2013 | TO-276AA | 3 | Other Transistors | 16A | N-CHANNEL | 650V | 330W Tc | 1534pF @ 35V | 105m Ω @ 16A | 16A Tc 155°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI020N06NAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi020n06naksa1-datasheets-2805.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 12 Weeks | 3 | no | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 214W | 1 | 24 ns | 45ns | 19 ns | 51 ns | 120A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3W Ta 214W Tc | 29A | 480A | 0.002Ohm | 420 mJ | 60V | N-Channel | 7800pF @ 30V | 2m Ω @ 100A, 10V | 2.8V @ 143μA | 29A Ta 120A Tc | 106nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSZ023N04LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsz023n04lsatma1-datasheets-2799.pdf | 8-PowerTDFN | 3 | 8 | no | EAR99 | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE | Tin | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | S-PDSO-F3 | 13 ns | 38ns | 8 ns | 42 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.1W Ta 69W Tc | 22A | 160A | 0.0032Ohm | 130 mJ | N-Channel | 2630pF @ 20V | 2.35m Ω @ 20A, 10V | 2V @ 250μA | 22A Ta 40A Tc | 37nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA50R800CE | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipa50r800ce-datasheets-2818.pdf | TO-220-3 Full Pack | 3 | 6 Weeks | yes | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 26.4W Tc | TO-220AB | 15.5A | 0.8Ohm | 83 mJ | N-Channel | 280pF @ 100V | 800m Ω @ 1.5A, 13V | 3.5V @ 130μA | 5A Tc | 12.4nC @ 10V | Super Junction | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7639-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-2n7639ga-datasheets-2829.pdf | TO-257-3 | 18 Weeks | 3 | EAR99 | Other Transistors | 15A | N-CHANNEL | 650V | 172W Tc | 1534pF @ 35V | 105m Ω @ 15A | 15A Tc 155°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR642DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir462dpt1ge3-datasheets-7448.pdf | PowerPAK® SO-8 | 6.15mm | 1.04mm | 5.15mm | 5 | 51 Weeks | 506.605978mg | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | Single | NOT SPECIFIED | 5.4W | 1 | R-PDSO-C5 | 30 ns | 105ns | 12 ns | 38 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 4.8W Ta 41.7W Tc | 0.0024Ohm | 40V | N-Channel | 4155pF @ 20V | 2.4m Ω @ 15A, 10V | 2.3V @ 250μA | 60A Tc | 84nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AON6542 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon6542-datasheets-2840.pdf | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | 951pF | 23A | 30V | 4.1W Ta 25W Tc | N-Channel | 951pF @ 15V | 5mOhm @ 20A, 10V | 2.2V @ 250μA | 23A Ta 30A Tc | 22.5nC @ 10V | 5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R380CE | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp50r380cexksa1-datasheets-0408.pdf | TO-220-3 Full Pack | 3 | yes | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 29.2W Tc | TO-220AB | 30A | 0.38Ohm | 210 mJ | N-Channel | 584pF @ 100V | 380m Ω @ 3.2A, 13V | 3.5V @ 260μA | 9.9A Tc | 24.8nC @ 10V | Super Junction | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7437-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfs7437trl7pp-datasheets-5442.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 10.67mm | 4.83mm | 9.65mm | Lead Free | No SVHC | 7 | EAR99 | No | Single | 231W | 1 | FET General Purpose Power | 18 ns | 62ns | 51 ns | 78 ns | 195A | 20V | 40V | 2.2V | 231W Tc | 37 ns | N-Channel | 7437pF @ 25V | 1.4m Ω @ 100A, 10V | 3.9V @ 150μA | 195A Tc | 225nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6442 | Alpha & Omega Semiconductor Inc. | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aon6442-datasheets-6163.pdf | 8-PowerSMD, Flat Leads | FET General Purpose Power | 22A | Single | 40V | 4.2W Ta 35.7W Tc | 65A | N-Channel | 2200pF @ 20V | 4.8m Ω @ 20A, 10V | 2.4V @ 250μA | 22A Ta 32A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA16JT17-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga16jt17247-datasheets-6164.pdf | TO-247-3 | 18 Weeks | No SVHC | 3 | EAR99 | Single | Other Transistors | 16A | N-CHANNEL | 1700V | 282W Tc | 1.7kV | 110m Ω @ 16A | 16A Tc 90°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7416 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/alphaomegasemiconductor-aon7416-datasheets-6166.pdf | 8-PowerVDFN | Lead Free | 13 Weeks | 14A | 30V | 3.1W Ta 25W Tc | N-Channel | 1900pF @ 15V | 8.5m Ω @ 20A, 10V | 1.7V @ 250μA | 14A Ta 40A Tc | 32nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7440PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfr7440trpbf-datasheets-6297.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 20 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | Single | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 39ns | 34 ns | 51 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 3V | 140W Tc | TO-252AA | 34 ns | 760A | 0.0024Ohm | 40V | N-Channel | 4610pF @ 25V | 3 V | 2.4m Ω @ 90A, 10V | 3.9V @ 100μA | 90A Tc | 134nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPA50R650CE | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-ipa50r650ce-datasheets-2905.pdf | TO-220-3 Full Pack | 3 | yes | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 27.2W Tc | TO-220AB | 6.1A | 19A | 0.65Ohm | 102 mJ | N-Channel | 342pF @ 100V | 650m Ω @ 1.8A, 13V | 3.5V @ 150μA | 6.1A Tc | 15nC @ 10V | Super Junction | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFY4N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfp4n60p3-datasheets-2815.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | AVALANCHE RATED | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 114W Tc | TO-252AA | 4A | 8A | 200 mJ | N-Channel | 365pF @ 25V | 2.2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 6.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP21D5UFD-7 | Diodes Incorporated | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp21d5ufd7-datasheets-2713.pdf | 3-UDFN | Lead Free | 6 Weeks | No SVHC | 3 | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 260 | 1 | 40 | 8.5 ns | 4.3ns | 19.2 ns | 20.2 ns | 600mA | 8V | 20V | 400mW Ta | -20V | P-Channel | 46.1pF @ 10V | 1 Ω @ 100mA, 4.5V | 1V @ 250μA | 600mA Ta | 800nC @ 8V | 1.2V 4.5V | ±8V |
