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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPD60R520C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd60r520c6atma1-datasheets-7565.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 66W Tc | 8.1A | 22A | 0.52Ohm | 153 mJ | N-Channel | 512pF @ 100V | 520m Ω @ 2.8A, 10V | 3.5V @ 230μA | 8.1A Tc | 23.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP80N04S2H4AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | TO-220-3 | 3 | AVALANCHE RATED | SINGLE | 1 | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 300W Tc | TO-220AB | 320A | 0.004Ohm | 660 mJ | N-Channel | 4400pF @ 25V | 4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 148nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N04S204AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-ipb100n04s204atma4-datasheets-4363.pdf | TO-220-3 | Contains Lead | 3 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 100A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 400A | 0.0036Ohm | 810 mJ | N-Channel | 5300pF @ 25V | 3.6m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 172nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPU60R1K0CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | -40°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu60r1k0ceakma1-datasheets-7553.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 6 Weeks | yes | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 12A | 1Ohm | 46 mJ | N-Channel | 280pF @ 100V | 1 Ω @ 1.5A, 10V | 3.5V @ 130μA | 4.3A Tc | 13nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C410NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c410nlaft3g-datasheets-3897.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | 260 | 30 | 1 | FET General Purpose Power | R-PDSO-F5 | 315A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 167W Tc | 900A | 0.0013Ohm | 706 mJ | N-Channel | 8862pF @ 25V | 0.9m Ω @ 50A, 10V | 2V @ 250μA | 48A Ta 315A Tc | 143nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| H7N1002LS-E | Renesas Electronics America | $7.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-h7n1002lse-datasheets-7603.pdf | SC-83 | 16 Weeks | 3 | 100W | 1 | 4-LDPAK | 9.7nF | 75A | 20V | 100V | 100W Tc | N-Channel | 9700pF @ 10V | 10mOhm @ 37.5A, 10V | 75A Ta | 155nC @ 10V | 10 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9880-55,135 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk988055135-datasheets-6992.pdf | TO-261-4, TO-261AA | Lead Free | 4 | 73 | EAR99 | ESD PROTECTED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | DUAL | GULL WING | 260 | 4 | 40 | 1.8W | 1 | FET General Purpose Power | R-PDSO-G4 | 10 ns | 30ns | 30 ns | 30 ns | 7.5A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 8.3W Tc | 3.5A | 40A | 0.08Ohm | 30 mJ | 55V | N-Channel | 650pF @ 25V | 80m Ω @ 5A, 5V | 2V @ 1mA | 7.5A Tc | 5V | ±10V | ||||||||||||||||||||||||||||||||||
| IPP100N06S205AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb100n06s205atma4-datasheets-6871.pdf | TO-220-3 | Contains Lead | 3 | 6.000006g | Halogen Free | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSFM-T3 | 100A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 400A | 0.005Ohm | N-Channel | 5110pF @ 25V | 5m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLZ24NS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirlz24nstrl-datasheets-7299.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 18A | 55V | 3.8W Ta 45W Tc | N-Channel | 480pF @ 25V | 60m Ω @ 11A, 10V | 2V @ 250μA | 18A Tc | 15nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2L06AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2l06atma2-datasheets-5969.pdf | TO-220-3 | 3 | LOGIC LEVEL COMPATIBLE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 80A | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | 250W Tc | TO-220AB | 320A | 0.0081Ohm | 530 mJ | N-Channel | 3800pF @ 25V | 6.3m Ω @ 69A, 10V | 2V @ 180μA | 80A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C06NT1G-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4c06nt1g-datasheets-0731.pdf | 8-PowerTDFN | 8 | 1 | FET General Purpose Power | 69A | Single | 30V | 770mW Ta | N-Channel | 1683pF @ 15V | 4m Ω @ 30A, 10V | 2.1V @ 250μA | 11A Ta 69A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86568-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdms86568f085-datasheets-7375.pdf | 8-PowerTDFN | 172.8mg | 8 | LIFETIME (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 80A | 60V | 214W Tj | N-Channel | 4335pF @ 30V | 3.5m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 71nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R750E6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ E6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/infineontechnologies-ipd60r750e6btma1-datasheets-5371.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 3 | 1 | PG-TO252-3 | 373pF | 9 ns | 7ns | 12 ns | 50 ns | 5.7A | 20V | 600V | 600V | 48W Tc | 680mOhm | N-Channel | 373pF @ 100V | 750mOhm @ 2A, 10V | 3.5V @ 170μA | 5.7A Tc | 17.2nC @ 10V | 750 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R380C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd65r380c6btma1-datasheets-8795.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 83W Tc | 10.6A | 29A | 0.38Ohm | 215 mJ | N-Channel | 710pF @ 100V | 380m Ω @ 3.2A, 10V | 3.5V @ 320μA | 10.6A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| 2SK1518-E | Renesas Electronics America | $6.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-2sk1518e-datasheets-7519.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 16 Weeks | 3 | yes | No | e2 | Tin/Copper (Sn/Cu) | SINGLE | 4 | 120W | 1 | FET General Purpose Power | 35 ns | 130ns | 105 ns | 240 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 120W Tc | 80A | 0.27Ohm | N-Channel | 3050pF @ 10V | 270m Ω @ 10A, 10V | 20A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPI80N04S204AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n04s204aksa2-datasheets-7521.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | yes | EAR99 | AVALANCHE RATED | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 80A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | 320A | 0.0037Ohm | 810 mJ | N-Channel | 5300pF @ 25V | 3.7m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AON6232A | Alpha & Omega Semiconductor Inc. | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerSMD, Flat Leads | 8-DFN (5x6) | 3.25nF | 85A | 40V | 6.2W Ta 113.5W Tc | N-Channel | 3250pF @ 20V | 2.9mOhm @ 20A, 10V | 2.5V @ 250μA | 35A Ta 85A Tc | 60nC @ 10V | 2.9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS9411-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdms9411f085-datasheets-7480.pdf | 8-PowerTDFN | 40 Weeks | yes | not_compliant | e3 | Tin (Sn) | YES | 260 | NOT SPECIFIED | FET General Purpose Power | Single | 40V | 68.2W Tj | 30A | N-Channel | 1100pF @ 20V | 7.8m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU60R950C6AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu60r950c6akma1-datasheets-7435.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 12 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 37W Tc | 12A | 0.95Ohm | 46 mJ | N-Channel | 280pF @ 100V | 950m Ω @ 1.5A, 10V | 3.5V @ 130μA | 4.4A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPU60R600C6AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu60r600c6akma1-datasheets-7441.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 12 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 63W Tc | 19A | 0.6Ohm | 133 mJ | N-Channel | 440pF @ 100V | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 7.3A Tc | 20.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AON6370 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerSMD, Flat Leads | 16 Weeks | 8-DFN (5x6) | 840pF | 47A | 30V | 6.2W Ta 26W Tc | N-Channel | 840pF @ 15V | 7.2mOhm @ 20A, 10V | 2.2V @ 250μA | 23A Ta 47A Tc | 13nC @ 10V | 7.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU50R950CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50r950ceauma1-datasheets-7430.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 6 Weeks | yes | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 4.3A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 53W Tc | 12.8A | 0.95Ohm | 68 mJ | N-Channel | 231pF @ 100V | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 4.3A Tc | 10.5nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL7437TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs7437trlpbf-datasheets-9988.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 195A | 40V | 230W Tc | N-Channel | 7330pF @ 25V | 1.8m Ω @ 100A, 10V | 3.9V @ 150μA | 195A Tc | 225nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R280CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50r280ceatma1-datasheets-7455.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 52 Weeks | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 119W Tc | 42.9A | 0.28Ohm | 231 mJ | N-Channel | 773pF @ 100V | 280m Ω @ 4.2A, 13V | 3.5V @ 350μA | 13A Tc | 32.6nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C410NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c410nlaft3g-datasheets-3897.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | FET General Purpose Power | 315A | Single | 40V | 3.8W Ta 167W Tc | N-Channel | 8862pF @ 25V | 0.9m Ω @ 50A, 10V | 2V @ 250μA | 48A Ta 315A Tc | 143nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDPL180N10BG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndpl180n10bg-datasheets-7373.pdf | TO-220-3 | 10mm | 15.7mm | 4.5mm | Lead Free | 5 Weeks | No SVHC | 3 | yes | Single | 95 ns | 185 ns | 180A | 20V | 100V | 4V | 2.1W Ta 200W Tc | N-Channel | 6950pF @ 50V | 3m Ω @ 15V, 50A | 4V @ 1mA | 180A Ta | 95nC @ 10V | 10V 15V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS9408-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms9408f085-datasheets-7383.pdf | 8-PowerTDFN | 5 | 172.8mg | 8 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 260 | Single | NOT SPECIFIED | 1 | R-PDSO-F5 | 80A | SILICON | DRAIN | SWITCHING | 40V | 40V | 214W Tj | 143 mJ | N-Channel | 5120pF @ 25V | 79ns | 51ns | 1.8m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 92nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFH7190TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7190trpbf-datasheets-7392.pdf | 8-PowerTDFN | 7.5mOhm | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 82A | 100V | 3.6W Ta 104W Tc | N-Channel | 1685pF @ 50V | 7.5m Ω @ 49A, 10V | 3.6V @ 100μA | 15A Ta 82A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD2904 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 2.785nF | 70A | 100V | 2.7W Ta 125W Tc | N-Channel | 2785pF @ 50V | 10mOhm @ 20A, 10V | 3.4V @ 250μA | 10.5A Ta 70A Tc | 52nC @ 10V | 10 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDD60N550U1T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndd60n550u135g-datasheets-7304.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 17 Weeks | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 8.2A | Single | 600V | 94W Tc | 8.5A | N-Channel | 540pF @ 50V | 550m Ω @ 4A, 10V | 4V @ 250μA | 8.2A Tc | 18nC @ 10V | 10V | ±25V |
