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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK9840-55/CUX | Nexperia USA Inc. | $2.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk984055cux-datasheets-7687.pdf | TO-261-4, TO-261AA | 4 | 12 Weeks | 4 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | Tin | DUAL | GULL WING | 4 | 1 | 17 ns | 65ns | 70 ns | 70 ns | 10.7A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 8.3W Tc | 5A | 60 mJ | N-Channel | 1400pF @ 25V | 40m Ω @ 5A, 5V | 2V @ 1mA | 5A Ta 10.7A Tc | 5V | ±10V | ||||||||||||||||||||||||||||||||||||
| MCH6320-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mch6320tle-datasheets-0093.pdf | 6-SMD, Flat Leads | Lead Free | 4 Weeks | 6 | yes | 8.8 ns | 80ns | 50 ns | 41 ns | 3.5A | 10V | 12V | 1.5W Ta | P-Channel | 405pF @ 6V | 70m Ω @ 1.5A, 4.5V | 1.4V @ 1mA | 3.5A Ta | 5.6nC @ 4.5V | 1.8V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH3475-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-mch3475tle-datasheets-2549.pdf | 3-SMD, Flat Lead | Lead Free | 6 Weeks | 3 | yes | e6 | Tin/Bismuth (Sn/Bi) | 3.4 ns | 3.6ns | 4 ns | 10.5 ns | 1.8A | 20V | 30V | 800mW Ta | N-Channel | 88pF @ 10V | 180m Ω @ 900mA, 10V | 2.6V @ 1mA | 1.8A Ta | 2nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2813T1L-E1-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | 16 Weeks | 8 | 27A | 30V | 1.5W Ta 52W Tc | P-Channel | 3130pF @ 10V | 6.2m Ω @ 27A, 10V | 27A Tc | 80nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK98150-55/CUF | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9815055135-datasheets-6844.pdf | TO-261-4, TO-261AA | 12 Weeks | 4 | Tin | SOT-223 | 330pF | 11 ns | 38ns | 20 ns | 25 ns | 5.5A | 10V | 55V | 8.3W Tc | N-Channel | 330pF @ 25V | 150mOhm @ 5A, 5V | 2V @ 1mA | 5.5A Tc | 150 mΩ | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| ECH8315-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ech8315tlh-datasheets-5632.pdf | 8-SMD, Flat Lead | Lead Free | 4 Weeks | yes | 7.5A | 30V | 1.5W Ta | P-Channel | 875pF @ 10V | 25m Ω @ 3.5A, 10V | 2.6V @ 1mA | 7.5A Ta | 18nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4196LS-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2sk4196ls-datasheets-0007.pdf | TO-220-3 | Lead Free | 3 | yes | EAR99 | Tin | e3 | NO | 3 | Single | FET General Purpose Powers | 13 ns | 32ns | 18 ns | 39 ns | 5A | 30V | 500V | 2W Ta 30W Tc | 5A | N-Channel | 360pF @ 30V | 1.56 Ω @ 2.8A, 10V | 5A Tc | 14.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| MCH3476-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mch3476tlh-datasheets-0652.pdf | 3-SMD, Flat Lead | Lead Free | 4 Weeks | 3 | SC-70FL/MCPH3 | 128pF | 5.1 ns | 11ns | 12 ns | 14.5 ns | 2A | 12V | 20V | 800mW Ta | N-Channel | 128pF @ 10V | 125mOhm @ 1A, 4.5V | 1.3V @ 1mA | 2A Ta | 1.8nC @ 4.5V | 125 mΩ | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R460CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r460cexksa1-datasheets-0791.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3.949996g | yes | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 11 ns | 9ns | 10 ns | 70 ns | 9.1A | 20V | SILICON | DRAIN | SWITCHING | 600V | 600V | 74W Tc | 26A | 0.46Ohm | N-Channel | 620pF @ 100V | 460m Ω @ 3.4A, 10V | 3.5V @ 280μA | 9.1A Tc | 28nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTMFS4C705NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 38 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQK0607AQDQS#H1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rqk0607aqdqsh1-datasheets-7685.pdf | TO-243AA | 16 Weeks | 4 | yes | EAR99 | No | 4 | FET General Purpose Power | 10 ns | 33ns | 5 ns | 26 ns | 2.4A | 12V | Single | 60V | 1.5W Ta | N-Channel | 170pF @ 10V | 270m Ω @ 1.2A, 4.5V | 2.4A Ta | 2nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| NDD60N900U1-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/onsemiconductor-ndd60n900u11g-datasheets-7774.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 5 Weeks | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | FET General Purpose Power | 5.7A | Single | 600V | 74W Tc | 5.9A | N-Channel | 360pF @ 50V | 900m Ω @ 2.5A, 10V | 4V @ 250μA | 5.7A Tc | 12nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2299WP-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2299wpele-datasheets-7692.pdf | 8-PowerWDFN | 8 | 16 Weeks | 8 | yes | EAR99 | DUAL | NO LEAD | 260 | 8 | 20 | 1 | FET General Purpose Power | Not Qualified | 14A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 25W Tc | 0.11Ohm | N-Channel | 710pF @ 25V | 110m Ω @ 7A, 10V | 14A Ta | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| 3LP01C-TB-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-3lp01ctbh-datasheets-4067.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.5mm | Lead Free | 3 | 3 | yes | EAR99 | e6 | Tin/Bismuth (Sn/Bi) | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 250mW | 1 | FET General Purpose Powers | 24 ns | 55ns | 130 ns | 120 ns | 100mA | 10V | SILICON | SWITCHING | 30V | 250mW Ta | -30V | P-Channel | 7.5pF @ 10V | 10.4 Ω @ 50mA, 4V | 100mA Ta | 1.43nC @ 10V | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||
| RJK5002DPD-00#J2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk5002dpd00j2-datasheets-7703.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | EAR99 | 4 | FET General Purpose Power | 2.4A | Single | 500V | 30W Tc | N-Channel | 165pF @ 25V | 5 Ω @ 1.2A, 10V | 2.4A Ta | 6.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK6014DPK-00#T0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk6014dpk00t0-datasheets-7627.pdf | TO-3P-3, SC-65-3 | Lead Free | 16 Weeks | yes | NOT SPECIFIED | 4 | NOT SPECIFIED | 16A | 600V | 150W Tc | N-Channel | 1800pF @ 25V | 575m Ω @ 8A, 10V | 16A Ta | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2287WP-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2287wpele-datasheets-7629.pdf | 8-PowerWDFN | 8 | 16 Weeks | 8 | yes | EAR99 | DUAL | NO LEAD | 260 | 8 | 20 | 1 | FET General Purpose Power | Not Qualified | 17A | SILICON | SINGLE WITH BUILT-IN DIODE | 200V | 200V | 30W Tc | 34A | 0.094Ohm | N-Channel | 1200pF @ 25V | 94m Ω @ 8.5A, 10V | 17A Ta | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| RJK6024DPH-E0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0349DSP-01#J0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/renesaselectronicsamerica-rjk0349dsp00j0-datasheets-1951.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8-SOP | 3.85nF | 20A | 30V | 2.5W Ta | N-Channel | 3850pF @ 10V | 3.8mOhm @ 10A, 10V | 20A Ta | 25nC @ 4.5V | 3.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R520C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd60r520c6atma1-datasheets-7565.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 66W Tc | 8.1A | 22A | 0.52Ohm | 153 mJ | N-Channel | 512pF @ 100V | 520m Ω @ 2.8A, 10V | 3.5V @ 230μA | 8.1A Tc | 23.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPP80N04S2H4AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | TO-220-3 | 3 | AVALANCHE RATED | SINGLE | 1 | R-PSFM-T3 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 300W Tc | TO-220AB | 320A | 0.004Ohm | 660 mJ | N-Channel | 4400pF @ 25V | 4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 148nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3430-Z-E1-AZ | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-2sk3430az-datasheets-7624.pdf | TO-220-3 | 16 Weeks | 3 | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | FET General Purpose Power | 110 ns | 1.8μs | 350 ns | 170 ns | 80A | 20V | Single | 40V | 1.5W Ta 84W Tc | N-Channel | 2800pF @ 10V | 7.3m Ω @ 40A, 10V | 80A Tc | 50nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| UPA2812T1L-E1-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2812t1le1at-datasheets-7648.pdf | 8-PowerVDFN | 16 Weeks | 8 | 30A | 30V | 1.5W Ta 52W Tc | P-Channel | 3740pF @ 10V | 4.8m Ω @ 30A, 10V | 30A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2131R-EL-E | Renesas Electronics America | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2131rele-datasheets-7649.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | yes | EAR99 | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | 900mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 350V | 350V | 2.5W Ta | 0.9A | 7.2A | 3.2Ohm | N-Channel | 460pF @ 25V | 3 Ω @ 450mA, 10V | 900mA Ta | 20nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| 2SK3431-AZ | Renesas Electronics America | $14.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-2sk3431az-datasheets-7662.pdf | TO-220-3 | 3 | 16 Weeks | 3 | EAR99 | 8541.29.00.95 | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 120 ns | 1.8μs | 440 ns | 350 ns | 83A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.5W Ta 100W Tc | TO-220AB | 0.0089Ohm | N-Channel | 6100pF @ 10V | 5.6m Ω @ 42A, 10V | 83A Tc | 110nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| 2SK3431-Z-E1-AZ | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-2sk3431az-datasheets-7662.pdf | TO-220-3 | 16 Weeks | 3 | 3 | FET General Purpose Power | 120 ns | 1.8μs | 440 ns | 350 ns | 83A | 20V | Single | 40V | 1.5W Ta 100W Tc | N-Channel | 6100pF @ 10V | 5.6m Ω @ 42A, 10V | 83A Tc | 110nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| H7N1002LSTL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-h7n1002lse-datasheets-7603.pdf | SC-83 | 2 | 16 Weeks | EAR99 | e6 | TIN BISMUTH | SINGLE | GULL WING | 250 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 75A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 100W Tc | 300A | 0.015Ohm | N-Channel | 9700pF @ 10V | 10m Ω @ 37.5A, 10V | 75A Ta | 155nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| RJK0355DSP-01#J0 | Renesas Electronics America | $6.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk0355dsp00j0-datasheets-3851.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 12A | 30V | 1.8W Ta | N-Channel | 860pF @ 10V | 11.1m Ω @ 6A, 10V | 12A Ta | 6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP8G202NG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | RoHS Compliant | 2015 | /files/onsemiconductor-ntp8g202ng-datasheets-7610.pdf | TO-220-3 | 10.53mm | 15.75mm | 4.83mm | Lead Free | 14 Weeks | No SVHC | 3 | yes | 6.2 ns | 9.7 ns | 9A | 18V | 600V | 2.1V | 65W Tc | N-Channel | 760pF @ 400V | 350m Ω @ 5.5A, 8V | 2.6V @ 500μA | 9A Tc | 9.3nC @ 4.5V | 8V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||
| N0439N-S19-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-n0439ns19ay-datasheets-7615.pdf | TO-220-3 | 16 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 90A | Single | 40V | 1.8W Ta 147W Tc | N-Channel | 5850pF @ 25V | 3.3m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 102nC @ 10V | 10V | ±20V |
