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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF7413GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7413gtrpbf-datasheets-6340.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | Single | 2.5W | 8-SO | 1.8nF | 8.6 ns | 50ns | 46 ns | 52 ns | 13A | 20V | 30V | 2.5W Ta | 11mOhm | 30V | N-Channel | 1800pF @ 25V | 11mOhm @ 7.3A, 10V | 3V @ 250μA | 13A Ta | 79nC @ 10V | 11 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AON7444 | Alpha & Omega Semiconductor Inc. | $4.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | 8-PowerVDFN | 5 | yes | EAR99 | e4 | Gold (Au) | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | S-PDSO-F5 | 33A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3.1W Ta 42W Tc | 75A | 0.022Ohm | 45 mJ | N-Channel | 2000pF @ 30V | 22m Ω @ 9A, 10V | 2.6V @ 250μA | 9A Ta 33A Tc | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF7410GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf7410gtrpbf-datasheets-6266.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | 18 Weeks | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | 13 ns | 18ns | 300 ns | 271 ns | 16A | 8V | SILICON | SWITCHING | 12V | 2.5W Ta | 65A | 0.007Ohm | -12V | P-Channel | 8676pF @ 10V | 7m Ω @ 16A, 4.5V | 900mV @ 250μA | 16A Ta | 91nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| IRF1405ZSTRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auxakf1405zs7p-datasheets-3012.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | EAR99 | 55V | 230W Tc | N-Channel | 5360pF @ 25V | 4.9m Ω @ 88A, 10V | 4V @ 150μA | 120A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7406GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7406gtrpbf-datasheets-6376.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | Single | 2.5W | 8-SO | 1.1nF | 16 ns | 33ns | 47 ns | 45 ns | -5.8A | 20V | 30V | 2.5W Ta | 45mOhm | -30V | P-Channel | 1100pF @ 25V | 45mOhm @ 2.8A, 10V | 1V @ 250μA | 5.8A Ta | 59nC @ 10V | 45 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF7821GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 155°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineon-irf7821gtrpbf-datasheets-6087.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | No SVHC | 8 | No | Single | 2.5W | 1 | 8-SO | 1.01nF | 6.3 ns | 2.7ns | 7.3 ns | 9.7 ns | 13.6A | 20V | 30V | 2.5W Ta | 9.1mOhm | 30V | N-Channel | 1010pF @ 15V | 1 V | 9.1mOhm @ 13A, 10V | 1V @ 250μA | 13.6A Ta | 14nC @ 4.5V | 9.1 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF7424GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | Single | 2.5W | 1 | 8-SO | 4.03nF | 15 ns | 23ns | 76 ns | 150 ns | 11A | 20V | 30V | 2.5W Ta | 13.5mOhm | -30V | P-Channel | 4030pF @ 25V | 13.5mOhm @ 11A, 10V | 2.5V @ 250μA | 11A Ta | 110nC @ 10V | 13.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSS816NW L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss816nwl6327-datasheets-6459.pdf | SC-70, SOT-323 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 500mW Ta | 1.4A | 0.16Ohm | 10 pF | N-Channel | 180pF @ 10V | 160m Ω @ 1.4A, 2.5V | 750mV @ 3.7μA | 1.4A Ta | 0.6nC @ 2.5V | 1.8V 2.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| AOT3N60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot430-datasheets-0079.pdf | TO-220-3 | unknown | FET General Purpose Power | 2.5A | Single | 600V | 83W Tc | N-Channel | 370pF @ 25V | 3.5 Ω @ 1.25A, 10V | 4.5V @ 250μA | 2.5A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K35MFV(TPL3) | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-723 | 1.2mm | 500μm | 800μm | 11 Weeks | 3 | No | Single | 150mW | 180mA | 10V | 150mW Ta | 20V | N-Channel | 9.5pF @ 3V | 3 Ω @ 50mA, 4V | 1V @ 1mA | 180mA Ta | 1.2V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB440 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | 75A | 60V | 150W Tc | N-Channel | 4560pF @ 30V | 7.5m Ω @ 30A, 10V | 4V @ 250μA | 75A Tc | 88nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB418L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 333W | 1 | 105A | 25V | 100V | 2.1W Ta 333W Tc | N-Channel | 5200pF @ 50V | 9.7m Ω @ 20A, 10V | 3.9V @ 250μA | 9.5A Ta 105A Tc | 83nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT5N60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot430-datasheets-0079.pdf | TO-220-3 | 132W | 1 | 5A | 30V | 600V | 132W Tc | N-Channel | 700pF @ 25V | 1.8 Ω @ 2.5A, 10V | 4.5V @ 250μA | 5A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD4180 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 150W | 1 | 13.5A | 25V | 80V | 3.1W Ta 150W Tc | N-Channel | 2410pF @ 40V | 14m Ω @ 20A, 10V | 4V @ 250μA | 10A Ta 54A Tc | 38nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3460 | Alpha & Omega Semiconductor Inc. | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-ao3460-datasheets-6050.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 16 Weeks | 3 | No | 1.4W | 1 | FET General Purpose Power | 650mA | 20V | Single | 60V | 1.4W Ta | 0.65A | N-Channel | 27pF @ 30V | 1.7 Ω @ 650mA, 10V | 2.5V @ 250μA | 650mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT416 | Alpha & Omega Semiconductor Inc. | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | TO-220-3 | Lead Free | FET General Purpose Power | 42A | Single | 100V | 1.92W Ta 150W Tc | N-Channel | 1450pF @ 50V | 37m Ω @ 20A, 10V | 4V @ 250μA | 4.7A Ta 42A Tc | 23nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2001 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~125°C TJ | Cut Tape (CT) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/epc-epc2001-datasheets-5861.pdf | Die | Die Outline (11-Solder Bar) | 950pF | 25A | 100V | N-Channel | 950pF @ 50V | 7mOhm @ 25A, 5V | 2.5V @ 5mA | 25A Ta | 10nC @ 5V | 7 mΩ | 5V | +6V, -5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4444 | Alpha & Omega Semiconductor Inc. | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-ao4444-datasheets-5997.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8 | No | e3 | Matte Tin (Sn) | 3.1W | 1 | 11A | 25V | 80V | 3.1W Ta | N-Channel | 2865pF @ 40V | 12m Ω @ 11A, 10V | 3.8V @ 250μA | 11A Ta | 46nC @ 10V | 7V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6702 | Alpha & Omega Semiconductor Inc. | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon6702-datasheets-6151.pdf | 8-PowerSMD, Flat Leads | 85A | 30V | 2.3W Ta 83W Tc | N-Channel | 7080pF @ 15V | 2m Ω @ 20A, 10V | 2.4V @ 250μA | 26A Ta 85A Tc | 123nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9204PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf9204pbf-datasheets-6153.pdf | TO-220-3 | 3 | No | 143W | 1 | TO-220AB | 7.676nF | 56A | 20V | 40V | 143W Tc | 23mOhm | -40V | P-Channel | 7676pF @ 25V | 16mOhm @ 37A, 10V | 3V @ 100μA | 56A Ta | 224nC @ 10V | 16 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3077GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb3077gpbf-datasheets-6176.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | No SVHC | 3 | No | Single | 370W | 1 | TO-220AB | 9.4nF | 25 ns | 87ns | 95 ns | 69 ns | 210A | 20V | 75V | 4V | 370W Tc | 3.3mOhm | 75V | N-Channel | 9400pF @ 50V | 4 V | 3.3mOhm @ 75A, 10V | 4V @ 250μA | 120A Tc | 220nC @ 10V | 3.3 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AON6450 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | 8-PowerSMD, Flat Leads | Lead Free | 52A | 100V | 2.3W Ta 83W Tc | N-Channel | 3100pF @ 50V | 14.5m Ω @ 20A, 10V | 4V @ 250μA | 9A Ta 52A Tc | 52nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT3N50 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot3n50-datasheets-6055.pdf | TO-220-3 | Lead Free | 16 Weeks | No | 74W | 1 | 3A | 30V | 500V | 74W Tc | N-Channel | 331pF @ 25V | 3 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4310GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb4310gpbf-datasheets-6195.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | Unknown | 3 | No | Single | 300W | 1 | TO-220AB | 7.67nF | 26 ns | 110ns | 78 ns | 68 ns | 130A | 20V | 100V | 300W Tc | 7mOhm | 100V | N-Channel | 7670pF @ 50V | 4 V | 7mOhm @ 75A, 10V | 4V @ 250μA | 130A Tc | 250nC @ 10V | 7 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP45N06S4L08AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi45n06s4l08aksa1-datasheets-0259.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 71W Tc | TO-220AB | 45A | 180A | 0.0079Ohm | 97 mJ | N-Channel | 4780pF @ 25V | 8.2m Ω @ 45A, 10V | 2.2V @ 35μA | 45A Tc | 64nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFB4310ZGPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb4310zgpbf-datasheets-6219.pdf | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Unknown | 3 | No | Single | 250W | 1 | TO-220AB | 6.86nF | 20 ns | 60ns | 57 ns | 55 ns | 120A | 20V | 100V | 250W Tc | 6mOhm | 100V | N-Channel | 6860pF @ 50V | 4 V | 6mOhm @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 6 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPD320N20N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd320n20n3gatma1-datasheets-6190.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 136W Tc | TO-252AA | 34A | 136A | 0.032Ohm | 190 mJ | N-Channel | 2350pF @ 100V | 32m Ω @ 34A, 10V | 4V @ 90μA | 34A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI2302ADS-T1 | Vishay Siliconix | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2302adst1e3-datasheets-7998.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | 1.437803g | 1 | Single | 900mW | SOT-23-3 (TO-236) | 300pF | 760mV | 7 ns | 55ns | 55 ns | 16 ns | 2.1A | 8V | 20V | 700mW Ta | 60mOhm | 20V | N-Channel | 300pF @ 10V | 60mOhm @ 3.6A, 4.5V | 1.2V @ 50μA | 2.1A Ta | 10nC @ 4.5V | 60 mΩ | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| IPP120N06S402AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-ipi120n06s402aksa2-datasheets-4027.pdf | TO-220-3 | 3 | 16 Weeks | 3 | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 25 ns | 5ns | 10 ns | 50 ns | 120A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 188W Tc | TO-220AB | 480A | 0.0028Ohm | 560 mJ | N-Channel | 15750pF @ 25V | 2.8m Ω @ 100A, 10V | 4V @ 140μA | 120A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TP0610K-T1 | Vishay Siliconix | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-tp0610kt1e3-datasheets-5432.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Contains Lead | 1.437803g | 3 | 1 | Single | 350mW | 1 | SOT-23-3 (TO-236) | 23pF | 185mA | 20V | 60V | 350mW Ta | 10Ohm | P-Channel | 23pF @ 25V | 6Ohm @ 500mA, 10V | 3V @ 250μA | 185mA Ta | 1.7nC @ 15V | 6 Ω | 4.5V 10V | ±20V |
