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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP80N06S407AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s407atma2-datasheets-1177.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 79W Tc | TO-220AB | 80A | 320A | 0.0071Ohm | 71 mJ | N-Channel | 4500pF @ 25V | 7.4m Ω @ 80A, 10V | 4V @ 40μA | 80A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP80N04S3H4AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s3h4atma1-datasheets-5408.pdf | TO-220-3 | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 115W Tc | TO-220AB | 80A | 320A | 0.0048Ohm | 370 mJ | N-Channel | 3900pF @ 25V | 4.8m Ω @ 80A, 10V | 4V @ 65μA | 80A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S4L07AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80n06s4l07aksa2-datasheets-7616.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 79W Tc | TO-220AB | 80A | 320A | 0.0064Ohm | 71 mJ | N-Channel | 5680pF @ 25V | 6.7m Ω @ 80A, 10V | 2.2V @ 40μA | 80A Tc | 75nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI90N06S4L04AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb90n06s4l04atma2-datasheets-9134.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 150W Tc | 90A | 360A | 0.0034Ohm | 331 mJ | N-Channel | 13000pF @ 25V | 3.7m Ω @ 90A, 10V | 2.2V @ 90μA | 90A Tc | 170nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP80P03P4L07AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipi80p03p4l07aksa1-datasheets-5629.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 8 ns | 4ns | 60 ns | 15 ns | 80A | 5V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 88W Tc | TO-220AB | 0.0072Ohm | P-Channel | 5700pF @ 25V | 7.2m Ω @ 80A, 10V | 2V @ 130μA | 80A Tc | 80nC @ 10V | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||||||
| IPP60R520C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipp60r520c6xksa1-datasheets-5671.pdf | TO-220-3 | Lead Free | 3 | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 66W | 1 | Not Qualified | 13 ns | 10ns | 14 ns | 85 ns | 8.1A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 66W Tc | TO-220AB | 22A | 0.52Ohm | N-Channel | 512pF @ 100V | 520m Ω @ 2.8A, 10V | 3.5V @ 230μA | 8.1A Tc | 23.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPP45P03P4L11AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipi45p03p4l11aksa1-datasheets-5543.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 7 ns | 3ns | 14 ns | 45 ns | 45A | 5V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 58W Tc | TO-220AB | 180A | 0.0111Ohm | 110 mJ | P-Channel | 3770pF @ 25V | 11.1m Ω @ 45A, 10V | 2V @ 85μA | 45A Tc | 55nC @ 10V | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||
| IPP80N06S405AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s405aksa2-datasheets-4081.pdf | TO-220-3 | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 107W Tc | TO-220AB | 80A | 320A | 0.0057Ohm | 152 mJ | N-Channel | 6500pF @ 25V | 5.7m Ω @ 80A, 10V | 4V @ 60μA | 80A Tc | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTTFS4943NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttfs4943ntwg-datasheets-5120.pdf | 8-PowerWDFN | Lead Free | 5 | 8 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | 8 | Single | NOT SPECIFIED | 2.17W | 1 | Not Qualified | S-XDSO-N5 | 21ns | 2.96 ns | 17.7 ns | 41A | SILICON | DRAIN | SWITCHING | 840mW Ta 22.3W Tc | 8A | 0.011Ohm | 30V | N-Channel | 1386pF @ 15V | 7.2m Ω @ 20A, 10V | 2.2V @ 250μA | 8A Ta 41A Tc | 20.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| RSS090P03FU6TB | ROHM Semiconductor | $3.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss090p03tb-datasheets-9736.pdf | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 8 | EAR99 | No | 2W | Other Transistors | 25 ns | 50ns | 80 ns | 150 ns | 9A | 20V | Single | 30V | -2.5V | 2W Ta | 9A | -30V | P-Channel | 4000pF @ 10V | 14m Ω @ 9A, 10V | 2.5V @ 1mA | 9A Ta | 39nC @ 5V | 4V 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPI034NE7N3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 75V | 75V | 214W Tc | 100A | 400A | 0.0034Ohm | 640 mJ | N-Channel | 8130pF @ 37.5V | 3.4m Ω @ 100A, 10V | 3.8V @ 155μA | 100A Tc | 117nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S4L05AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s4l05atma2-datasheets-0347.pdf | TO-220-3 | 3 | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 107W Tc | TO-220AB | 80A | 320A | 0.0048Ohm | 152 mJ | N-Channel | 8180pF @ 25V | 5.1m Ω @ 80A, 10V | 2.2V @ 60μA | 80A Tc | 110nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD50N06S409ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50n06s409atma2-datasheets-9321.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 71W Tc | 50A | 200A | 0.009Ohm | 87 mJ | N-Channel | 3785pF @ 25V | 9m Ω @ 50A, 10V | 4V @ 34μA | 50A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPI120N06S403AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-ipb120n06s403atma2-datasheets-8197.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 40 ns | 10ns | 15 ns | 80 ns | 120A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 167W Tc | 480A | N-Channel | 13150pF @ 25V | 3.2m Ω @ 100A, 10V | 4V @ 120μA | 120A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| RSS075P03FU6TB | ROHM Semiconductor | $3.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss075p03tb-datasheets-9664.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | No | 2W | 8-SOP | 2.9nF | 20 ns | 35ns | 90 ns | 85 ns | 7.5A | 20V | -30V | 30V | -2.5V | 2W Ta | 21mOhm | -30V | P-Channel | 2900pF @ 10V | -2.5 V | 21mOhm @ 7.5A, 10V | 2.5V @ 1mA | 7.5A Ta | 30nC @ 5V | 21 mΩ | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFX74N50P2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk74n50p2-datasheets-4293.pdf | TO-247-3 | 3 | 247 | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.4kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 74A | 30V | SILICON | DRAIN | SWITCHING | 1400W Tc | 185A | 0.077Ohm | 3000 mJ | 500V | N-Channel | 9900pF @ 25V | 77m Ω @ 500mA, 10V | 5V @ 4mA | 74A Tc | 165nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IPI90N06S404AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/infineontechnologies-ipi90n06s404aksa1-datasheets-5648.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10mm | 9.25mm | 4.4mm | 3 | EAR99 | Halogen Free | Single | 30 ns | 40 ns | 90A | 20V | 60V | 150W Tc | N-Channel | 10400pF @ 25V | 4m Ω @ 90A, 10V | 4V @ 90μA | 90A Tc | 128nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS110N12N3GBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips110n12n3gbkma1-datasheets-5653.pdf | TO-251-3 Stub Leads, IPak | Contains Lead | 3 | 3 | no | EAR99 | e3 | Tin (Sn) | Not Halogen Free | SINGLE | 4 | 1 | Not Qualified | 75A | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 136W Tc | 0.011Ohm | 120 mJ | N-Channel | 4310pF @ 60V | 11m Ω @ 75A, 10V | 4V @ 83μA | 75A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S4L05AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s4l05atma2-datasheets-0347.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 107W Tc | 80A | 320A | 0.0048Ohm | 152 mJ | N-Channel | 8180pF @ 25V | 5.1m Ω @ 80A, 10V | 2.2V @ 60μA | 80A Tc | 110nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP065N04N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp065n04ng-datasheets-5596.pdf | TO-220-3 | 3 | yes | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 68W Tc | TO-220AB | 50A | 350A | 0.0065Ohm | 50 mJ | N-Channel | 2800pF @ 20V | 6.5m Ω @ 50A, 10V | 4V @ 200μA | 50A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK13A65U(STA4,Q,M) | Toshiba Semiconductor and Storage | $4.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | No | 40W | 1 | TO-220SIS | 950pF | 30ns | 8 ns | 13A | 30V | 650V | 40W Tc | N-Channel | 950pF @ 10V | 380mOhm @ 6.5A, 10V | 5V @ 1mA | 13A Ta | 17nC @ 10V | 380 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPI120N06S402AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi120n06s402aksa2-datasheets-4027.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | compliant | NO | SINGLE | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 188W Tc | 120A | 480A | 0.0028Ohm | 560 mJ | N-Channel | 15750pF @ 25V | 2.8m Ω @ 100A, 10V | 4V @ 140μA | 120A Tc | 195nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S405AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s405aksa2-datasheets-4081.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | compliant | NO | SINGLE | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 107W Tc | 80A | 320A | 0.0057Ohm | 152 mJ | N-Channel | 6500pF @ 25V | 5.7m Ω @ 80A, 10V | 4V @ 60μA | 80A Tc | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPI70N10S3L12AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/infineontechnologies-ipi70n10s3l12aksa1-datasheets-5612.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 16 Weeks | 3 | EAR99 | Halogen Free | 10 ns | 5ns | 28 ns | 70A | 20V | 100V | 125W Tc | N-Channel | 5550pF @ 25V | 12.1m Ω @ 70A, 10V | 2.4V @ 83μA | 70A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB90N06S4L04ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb90n06s4l04atma2-datasheets-9134.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 150W Tc | 90A | 360A | 0.0034Ohm | 331 mJ | N-Channel | 13000pF @ 25V | 3.4m Ω @ 90A, 10V | 2.2V @ 90μA | 90A Tc | 170nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI80N04S3H4AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s3h4atma1-datasheets-5408.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 80A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 115W Tc | 0.0048Ohm | N-Channel | 3900pF @ 25V | 4.8m Ω @ 80A, 10V | 4V @ 65μA | 80A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPI126N10N3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipb123n10n3gatma1-datasheets-4205.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 94W Tc | 58A | 232A | 0.0126Ohm | 70 mJ | N-Channel | 2500pF @ 50V | 12.6m Ω @ 46A, 10V | 3.5V @ 46μA | 58A Tc | 35nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPI80P03P4L07AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80p03p4l07aksa1-datasheets-5629.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 8 ns | 4ns | 60 ns | 15 ns | 80A | 5V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 88W Tc | 0.0072Ohm | P-Channel | 5700pF @ 25V | 7.2m Ω @ 80A, 10V | 2V @ 130μA | 80A Tc | 80nC @ 10V | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||||
| IPD90N06S405ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd90n06s405atma2-datasheets-0263.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 107W Tc | N-Channel | 6500pF @ 25V | 5.1m Ω @ 90A, 10V | 4V @ 60μA | 90A Tc | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI45N06S409AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipi45n06s409aksa2-datasheets-1344.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 71W Tc | 45A | 180A | 0.0094Ohm | 97 mJ | N-Channel | 3785pF @ 25V | 9.4m Ω @ 45A, 10V | 4V @ 34μA | 45A Tc | 47nC @ 10V | 10V | ±20V |
