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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSF083N03LQ G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-bsf083n03lqg-datasheets-5402.pdf | 3-WDSON | 3 | EAR99 | AVALANCHE RATED | compliant | e3 | MATTE TIN | YES | BOTTOM | NO LEAD | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.2W Ta 36W Tc | 13A | 212A | 0.0142Ohm | 30 mJ | N-Channel | 1800pF @ 15V | 8.3m Ω @ 20A, 10V | 2.2V @ 250μA | 13A Ta 53A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| RSS040P03FU6TB | ROHM Semiconductor | $2.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss040p03fu6tb-datasheets-5406.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 106MOhm | 8 | No | 2W | 8-SOP | 800pF | 12 ns | 25ns | 15 ns | 45 ns | 4A | 20V | -30V | 30V | -2.5V | 2W Ta | 58mOhm | -30V | P-Channel | 800pF @ 10V | -2.5 V | 58mOhm @ 4A, 10V | 2.5V @ 1mA | 4A Ta | 8nC @ 5V | 58 mΩ | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB80N04S3H4ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipb80n04s3h4atma1-datasheets-5408.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | EAR99 | e3 | Tin (Sn) | Halogen Free | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 80A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 115W Tc | 0.0048Ohm | N-Channel | 3900pF @ 25V | 4.5m Ω @ 80A, 10V | 4V @ 65μA | 80A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| RSS050P03FU6TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss050p03tb-datasheets-4461.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | yes | EAR99 | No | 2W | Other Transistors | 12 ns | 25ns | 35 ns | 70 ns | 5A | 20V | Single | 30V | -2.5V | 2W Ta | 5A | -30V | P-Channel | 1200pF @ 10V | 42m Ω @ 5A, 10V | 2.5V @ 1mA | 5A Ta | 13nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSS314PEL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss314pel6327htsa1-datasheets-5415.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 294pF | 1.5A | 30V | 500mW Ta | P-Channel | 294pF @ 15V | 140mOhm @ 1.5A, 10V | 2V @ 6.3μA | 1.5A Ta | 2.9nC @ 10V | 140 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S4L05ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s4l05atma2-datasheets-0347.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 107W Tc | 80A | 320A | 0.0048Ohm | 152 mJ | N-Channel | 8180pF @ 25V | 4.8m Ω @ 80A, 10V | 2.2V @ 60μA | 80A Tc | 110nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| BSS127H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss127h6327xtsa1-datasheets-5357.pdf | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 600V | 500mW Ta | N-Channel | 28pF @ 25V | 500Ohm @ 16mA, 10V | 2.6V @ 8μA | 21mA Ta | 1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2170H-EL-E | Renesas Electronics America | $0.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2170hele-datasheets-5426.pdf | SC-100, SOT-669 | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 20 | 1 | FET General Purpose Power | R-PSSO-G4 | 15 ns | 43ns | 7.1 ns | 44 ns | 45A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 30W Tc | 180A | N-Channel | 4650pF @ 10V | 4.2m Ω @ 22.5A, 10V | 3V @ 1mA | 45A Ta | 62nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| RSS100N03FU6TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-rss100n03tb-datasheets-9691.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 18.9MOhm | 8 | EAR99 | No | 2W | 10 ns | 16ns | 24 ns | 55 ns | 10A | 20V | 30V | 2.5V | 2W Ta | 30V | N-Channel | 1070pF @ 10V | 2.5 V | 13m Ω @ 10A, 10V | 2.5V @ 1mA | 10A Ta | 14nC @ 5V | 4V 10V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSF053N03LT G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsf053n03ltg-datasheets-5364.pdf | 3-WDSON | 3 | EAR99 | AVALANCHE RATED | compliant | e3 | MATTE TIN | YES | BOTTOM | NO LEAD | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.2W Ta 42W Tc | 16A | 284A | 0.0053Ohm | 75 mJ | N-Channel | 2700pF @ 15V | 5.3m Ω @ 30A, 10V | 2.2V @ 250μA | 16A Ta 71A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSB024N03LX G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsb024n03lxg-datasheets-5370.pdf | 3-WDSON | 3 | EAR99 | compliant | e3 | MATTE TIN | YES | BOTTOM | NO LEAD | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-XBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 78W Tc | 27A | 400A | 0.0024Ohm | 220 mJ | N-Channel | 4900pF @ 15V | 2.4m Ω @ 30A, 10V | 2.2V @ 250μA | 27A Ta 145A Tc | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TPCP8103-H(TE85LFM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 8 | No | 6.5 ns | 9 ns | 4.8A | 20V | 40V | 840mW Ta | P-Channel | 800pF @ 10V | 40m Ω @ 2.4A, 10V | 2V @ 1mA | 4.8A Ta | 19nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB180N06S4H1ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb180n06s4h1atma2-datasheets-1794.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | EAR99 | ULTRA-LOW RESISTANCE | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 250W Tc | 180A | 720A | 0.0017Ohm | 700 mJ | N-Channel | 21900pF @ 25V | 1.7m Ω @ 100A, 10V | 4V @ 200μA | 180A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPB120N06S402ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb120n06s402atma2-datasheets-3797.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 188W Tc | 120A | 480A | 0.0024Ohm | 560 mJ | N-Channel | 15750pF @ 25V | 2.4m Ω @ 100A, 10V | 4V @ 140μA | 120A Tc | 195nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| RRS090P03TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 9A | 30V | P-Channel | 9A Ta | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSS110N03FU6TB | ROHM Semiconductor | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss110n03tb-datasheets-9759.pdf | 8-SOIC (0.154, 3.90mm Width) | 40 Weeks | No SVHC | 10.3mOhm | 8 | EAR99 | No | 2W | 9 ns | 17ns | 30 ns | 60 ns | 11A | 20V | 30V | 2.5V | 2W Ta | 30V | N-Channel | 1300pF @ 10V | 2.5 V | 10.7m Ω @ 11A, 10V | 2.5V @ 1mA | 11A Ta | 17nC @ 5V | 4V 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S407ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s407atma2-datasheets-1177.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 79W Tc | 80A | 320A | 0.0071Ohm | 71 mJ | N-Channel | 4500pF @ 25V | 7.1m Ω @ 80A, 10V | 4V @ 40μA | 80A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TPCC8A01-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 8-TSON Advance (3.3x3.3) | 1.9nF | 2.2ns | 3.4 ns | 21A | 20V | 30V | 700mW Ta 30W Tc | N-Channel | 1900pF @ 10V | 9.9mOhm @ 10.5A, 10V | 2.3V @ 1mA | 21A Ta | 20nC @ 10V | 9.9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J108TU(TE85L) | Toshiba Semiconductor and Storage | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | Lead Free | 3 | No | Single | 800mW | 1 | 1.8A | 8V | 20V | 500mW Ta | -20V | P-Channel | 250pF @ 10V | 158m Ω @ 800mA, 4V | 1V @ 1mA | 1.8A Ta | 1.8V 4V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCP8004(TE85L,F) | Toshiba Semiconductor and Storage | $1.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 8 | No | 12ns | 9 ns | 8.3A | 20V | 30V | 840mW Ta | N-Channel | 1270pF @ 10V | 8.5m Ω @ 4.2A, 10V | 2.5V @ 1mA | 8.3A Ta | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4800NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttfs4800ntwg-datasheets-5350.pdf | 8-PowerWDFN | 3.15mm | 800μm | 3.15mm | Lead Free | 5 | No SVHC | 8 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 8 | Single | NOT SPECIFIED | 2.2W | 1 | Not Qualified | S-XDSO-F5 | 11.1 ns | 14 ns | 8.3A | 20V | SILICON | DRAIN | SWITCHING | 860mW Ta 33.8W Tc | 5A | 57A | 0.027Ohm | 36.6 mJ | 30V | N-Channel | 964pF @ 15V | 20m Ω @ 20A, 10V | 3V @ 250μA | 5A Ta 32A Tc | 16.6nC @ 10V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||
| TPCC8006-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcc8006hte12lqm-datasheets-5352.pdf | 8-PowerVDFN | 8 | No | 8-TSON Advance (3.3x3.3) | 2.2nF | 3.8ns | 9.7 ns | 22A | 20V | 30V | 700mW Ta 27W Tc | N-Channel | 2200pF @ 10V | 8mOhm @ 11A, 10V | 2.3V @ 200μA | 22A Ta | 27nC @ 10V | 8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT1072H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-hat1072hele-datasheets-5354.pdf | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 30W | 1 | Other Transistors | R-PSSO-G4 | 28 ns | 60ns | 140 ns | 305 ns | 40A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 30W Tc | 0.0077Ohm | P-Channel | 9500pF @ 10V | 4.5m Ω @ 20A, 10V | 40A Ta | 155nC @ 10V | 4.5V 10V | +10V, -20V | ||||||||||||||||||||||||||||||||||||
| NTTFS4840NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttfs4840ntwg-datasheets-5307.pdf | 8-PowerWDFN | 3.15mm | 800μm | 3.15mm | Lead Free | 5 | No SVHC | 8 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 8 | Single | NOT SPECIFIED | 2.2W | 1 | Not Qualified | S-XDSO-F5 | 10.5 ns | 11.5 ns | 7.3A | 20V | SILICON | DRAIN | SWITCHING | 840mW Ta 27.8W Tc | 4.6A | 77A | 0.036Ohm | 30V | N-Channel | 580pF @ 15V | 24m Ω @ 20A, 10V | 3V @ 250μA | 4.6A Ta 26A Tc | 10.8nC @ 10V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||||||||||
| TPCC8002-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcc8002hte12lq-datasheets-6257.pdf | 8-PowerVDFN | 8 | No | 8-TSON Advance (3.3x3.3) | 2.5nF | 2.8ns | 5.9 ns | 22A | 20V | 30V | 700mW Ta 30W Tc | N-Channel | 2500pF @ 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 22A Ta | 27nC @ 10V | 8.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NDD03N60Z-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/onsemiconductor-ndd03n60z1g-datasheets-5314.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 7.62mm | 2.38mm | Lead Free | 3.6Ohm | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | 4 | Single | 61W | 1 | 9 ns | 8ns | 10 ns | 16 ns | 2.6A | 30V | 61W Tc | 600V | N-Channel | 312pF @ 25V | 3.6 Ω @ 1.2A, 10V | 4.5V @ 50μA | 2.6A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTV03N400S | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtv03n400s-datasheets-5320.pdf | PLUS-220SMD | Lead Free | 2 | 220 | yes | AVALANCHE RATED | No | SINGLE | GULL WING | 3 | 130W | 1 | FET General Purpose Power | R-PSSO-G2 | 300mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4000V | 130W Tc | 300A | 800A | 4kV | N-Channel | 435pF @ 25V | 290 Ω @ 500mA, 10V | 4V @ 250μA | 300mA Tc | 16.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| RSS105N03FU6TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss105n03tb-datasheets-9693.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOP | 1.13nF | 10.5A | 30V | 2W Ta | N-Channel | 1130pF @ 10V | 11.7mOhm @ 10.5A, 10V | 2.5V @ 1mA | 10.5A Ta | 15nC @ 5V | 11.7 mΩ | 4V 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCC8003-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcc8003hte12lqm-datasheets-5329.pdf | 8-PowerVDFN | 8 | No | 8-TSON Advance (3.3x3.3) | 1.3nF | 2.2ns | 2.7 ns | 13A | 20V | 30V | 700mW Ta 22W Tc | N-Channel | 1300pF @ 10V | 16.9mOhm @ 6.5A, 10V | 2.3V @ 200μA | 13A Ta | 17nC @ 10V | 16.9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2172H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-hat2172hele-datasheets-5331.pdf | SC-100, SOT-669 | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 1 | FET General Purpose Power | R-PSSO-G4 | 12 ns | 20ns | 4.5 ns | 38 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 20W Tc | 0.0092Ohm | N-Channel | 2420pF @ 10V | 7.5m Ω @ 15A, 10V | 3V @ 1mA | 30A Ta | 32nC @ 10V | 7V 10V | ±20V |
