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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TP0610K-T1 | Vishay Siliconix | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-tp0610kt1e3-datasheets-5432.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Contains Lead | 1.437803g | 3 | 1 | Single | 350mW | 1 | SOT-23-3 (TO-236) | 23pF | 185mA | 20V | 60V | 350mW Ta | 10Ohm | P-Channel | 23pF @ 25V | 6Ohm @ 500mA, 10V | 3V @ 250μA | 185mA Ta | 1.7nC @ 15V | 6 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| EPC2007 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~125°C TJ | Cut Tape (CT) | 1 (Unlimited) | GaNFET (Gallium Nitride) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/epc-epc2007-datasheets-5891.pdf | Die | Die Outline (5-Solder Bar) | 205pF | 6A | 100V | N-Channel | 205pF @ 50V | 30mOhm @ 6A, 5V | 2.5V @ 1.2mA | 6A Ta | 2.8nC @ 5V | 30 mΩ | 5V | +6V, -5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80P03P4L04AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80p03p4l04aksa1-datasheets-5902.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 14 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 137W Tc | 80A | 320A | 0.007Ohm | 410 mJ | P-Channel | 11300pF @ 25V | 4.4m Ω @ 80A, 10V | 2V @ 253μA | 80A Tc | 160nC @ 10V | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||||||||||||
| EPC2010 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~125°C TJ | Cut Tape (CT) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/epc-epc2010-datasheets-5932.pdf | Die | 14 Weeks | Die | 540pF | 12A | 200V | N-Channel | 540pF @ 100V | 25mOhm @ 6A, 5V | 2.5V @ 3mA | 12A Ta | 7.5nC @ 5V | 25 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2012 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~125°C TJ | Cut Tape (CT) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2012-datasheets-5942.pdf | Die | Die | 145pF | 3A | 200V | N-Channel | 145pF @ 100V | 100mOhm @ 3A, 5V | 2.5V @ 1mA | 3A Ta | 1.8nC @ 5V | 100 mΩ | 5V | +6V, -5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2303BDS-T1 | Vishay Siliconix | $0.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2303bdst1e3-datasheets-8001.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | 1.437803g | 3 | 1 | Single | 900mW | SOT-23-3 (TO-236) | 180pF | 55 ns | 40ns | 40 ns | 10 ns | 1.49A | 20V | 30V | 700mW Ta | 200mOhm | -30V | P-Channel | 180pF @ 15V | 200mOhm @ 1.7A, 10V | 3V @ 250μA | 1.49A Ta | 10nC @ 10V | 200 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7860ADP-T1-E3 | Vishay Siliconix | $0.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7860adpt1e3-datasheets-5966.pdf | PowerPAK® SO-8 | Lead Free | 5 | 9.5mOhm | 8 | yes | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.8W | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 12ns | 12 ns | 46 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 50A | 60 mJ | 30V | N-Channel | 9.5m Ω @ 16A, 10V | 3V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| EPC2014 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/epc-epc2014-datasheets-5968.pdf | Die | 14 Weeks | Die Outline (5-Solder Bar) | 325pF | 10A | 40V | N-Channel | 325pF @ 20V | 16mOhm @ 5A, 5V | 2.5V @ 2mA | 10A Ta | 2.8nC @ 5V | 16 mΩ | 5V | +6V, -5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002E | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n7002et1e3-datasheets-4071.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | 12 Weeks | 8.193012mg | No SVHC | 3 | 1 | Single | 350mW | SOT-23-3 (TO-236) | 21pF | 240mA | 20V | 60V | 350mW Ta | 7.5Ohm | 60V | N-Channel | 21pF @ 5V | 2 V | 3Ohm @ 250mA, 10V | 2.5V @ 250μA | 240mA Ta | 0.6nC @ 4.5V | 3 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AO4452 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 3.1W Ta | 8A | 0.025Ohm | N-Channel | 2200pF @ 50V | 25m Ω @ 8A, 10V | 4V @ 250μA | 8A Ta | 34nC @ 10V | 7V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI2343DS-T1 | Vishay Siliconix | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2343dst1ge3-datasheets-3348.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | 1.437803g | 3 | 1 | Single | SOT-23-3 (TO-236) | 540pF | 10 ns | 15ns | 15 ns | 31 ns | 3.1A | 20V | 30V | 750mW Ta | 53mOhm | P-Channel | 540pF @ 15V | 53mOhm @ 4A, 10V | 3V @ 250μA | 3.1A Ta | 21nC @ 10V | 53 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFV12N90PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n90p-datasheets-4161.pdf | PLUS-220SMD | 2 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 380W | 1 | Not Qualified | R-PSSO-G2 | 12A | 30V | SILICON | DRAIN | SWITCHING | 380W Tc | 24A | 0.9Ohm | 500 mJ | 900V | N-Channel | 3080pF @ 25V | 900m Ω @ 6A, 10V | 6.5V @ 1mA | 12A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| BSS159NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss159ne6327-datasheets-7184.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | YES | DUAL | GULL WING | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 0.23A | 5.9 pF | N-Channel | 44pF @ 25V | 3.5 Ω @ 160mA, 10V | 2.4V @ 26μA | 230mA Ta | 2.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N06S407ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd90n06s407atma2-datasheets-0449.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 79W Tc | N-Channel | 4500pF @ 25V | 6.9m Ω @ 90A, 10V | 4V @ 40μA | 90A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS118N10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips118n10ng-datasheets-5737.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | unknown | e3 | MATTE TIN | NO | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 125W Tc | TO-251AA | 75A | 300A | 0.0118Ohm | 120 mJ | N-Channel | 4320pF @ 50V | 11.8m Ω @ 75A, 10V | 4V @ 83μA | 75A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB021N06N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp024n06n3gxksa1-datasheets-2413.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 250W Tc | 120A | 480A | 0.0021Ohm | 634 mJ | N-Channel | 23000pF @ 30V | 2.1m Ω @ 100A, 10V | 4V @ 196μA | 120A Tc | 275nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPP120N06S4H1AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp120n06s4h1aksa2-datasheets-1522.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 250W Tc | TO-220AB | 120A | 480A | 0.0024Ohm | 1060 mJ | N-Channel | 21900pF @ 25V | 2.4m Ω @ 100A, 10V | 4V @ 200μA | 120A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| CSD25201W15 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/texasinstruments-csd25201w15-datasheets-5751.pdf | 9-UFBGA, DSBGA | Contains Lead | 9 | No SVHC | 9 | no | BOTTOM | BALL | NOT SPECIFIED | CSD25201 | 9 | Single | NOT SPECIFIED | 1.5W | 1 | Other Transistors | Not Qualified | 9.5 ns | 11ns | 38 ns | 51 ns | 4A | -6V | SILICON | SWITCHING | 20V | -700mV | 1.5W Ta | 4A | 0.07Ohm | -20V | P-Channel | 510pF @ 10V | -700 mV | 40m Ω @ 2A, 4.5V | 1.1V @ 250μA | 4A Ta | 5.6nC @ 4.5V | 1.8V 4.5V | |||||||||||||||||||||||||||||||||||||
| IPP90N06S404AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/infineontechnologies-ipi90n06s404aksa1-datasheets-5648.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | 3 | EAR99 | Halogen Free | Single | 30 ns | 40 ns | 90A | 20V | 60V | 150W Tc | N-Channel | 10400pF @ 25V | 4m Ω @ 90A, 10V | 4V @ 90μA | 90A Tc | 128nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD110N12N3GBUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips110n12n3gbkma1-datasheets-5653.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | no | EAR99 | SINGLE | GULL WING | 4 | 136W | 1 | Not Qualified | R-PSSO-G2 | 16 ns | 8 ns | 24 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 120V | 136W Tc | 300A | N-Channel | 4310pF @ 60V | 11m Ω @ 75A, 10V | 4V @ 83μA | 75A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPB60R600CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r600cpatma1-datasheets-5776.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | no | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 60W | 1 | R-PSSO-G2 | 17 ns | 12ns | 17 ns | 75 ns | 6.1A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60W Tc | 0.6Ohm | N-Channel | 550pF @ 100V | 600m Ω @ 3.3A, 10V | 3.5V @ 220μA | 6.1A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB034N06N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb034n06n3gatma1-datasheets-5800.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 7 | 40 | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 167W Tc | 100A | 400A | 0.0034Ohm | 149 mJ | N-Channel | 11000pF @ 30V | 3.4m Ω @ 100A, 10V | 4V @ 93μA | 100A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTTFS4941NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-nttfs4941ntag-datasheets-5037.pdf | 8-PowerWDFN | Lead Free | 5 | 23 Weeks | 8 | LIFETIME (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 1 | FET General Purpose Power | S-PDSO-F5 | 11 ns | 21ns | 3 ns | 19 ns | 46A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 840mW Ta 25.5W Tc | 0.009Ohm | N-Channel | 1619pF @ 15V | 6.2m Ω @ 20A, 10V | 2.2V @ 250μA | 8.3A Ta 46A Tc | 22.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SPD30N03S2L07GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/infineontechnologies-spd30n03s2l07gbtma1-datasheets-5806.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 1 | R-PSSO-G2 | 8 ns | 17ns | 47 ns | 62 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 136W Tc | 120A | 0.0098Ohm | 250 mJ | N-Channel | 2530pF @ 25V | 6.7m Ω @ 30A, 10V | 2V @ 85μA | 30A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPP120N06S403AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb120n06s403atma2-datasheets-8197.pdf | TO-220-3 | 3 | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 167W Tc | TO-220AB | 120A | 480A | 0.0032Ohm | 392 mJ | N-Channel | 13150pF @ 25V | 3.2m Ω @ 100A, 10V | 4V @ 120μA | 120A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSL802SNL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsl802snl6327htsa1-datasheets-4982.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 6 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | DUAL | GULL WING | 6 | 2W | 1 | 10 ns | 30ns | 5.5 ns | 20 ns | 7.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 2W Ta | 0.022Ohm | 77 pF | N-Channel | 1347pF @ 10V | 22m Ω @ 7.5A, 2.5V | 750mV @ 30μA | 7.5A Ta | 4.7nC @ 2.5V | 1.8V 2.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SI2323DS-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2323dst1e3-datasheets-7974.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | 1.437803g | 3 | 1 | Single | 1.25W | SOT-23-3 (TO-236) | 1.02nF | 25 ns | 43ns | 43 ns | 71 ns | 3.7A | 8V | 20V | 750mW Ta | 39mOhm | -20V | P-Channel | 1020pF @ 10V | 39mOhm @ 4.7A, 4.5V | 1V @ 250μA | 3.7A Ta | 19nC @ 4.5V | 39 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| IPI90N06S4L04AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb90n06s4l04atma2-datasheets-9134.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 150W Tc | 90A | 360A | 0.0034Ohm | 331 mJ | N-Channel | 13000pF @ 25V | 3.7m Ω @ 90A, 10V | 2.2V @ 90μA | 90A Tc | 170nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80P03P4L07AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipi80p03p4l07aksa1-datasheets-5629.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 8 ns | 4ns | 60 ns | 15 ns | 80A | 5V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 88W Tc | TO-220AB | 0.0072Ohm | P-Channel | 5700pF @ 25V | 7.2m Ω @ 80A, 10V | 2V @ 130μA | 80A Tc | 80nC @ 10V | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||||||
| IPP60R520C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipp60r520c6xksa1-datasheets-5671.pdf | TO-220-3 | Lead Free | 3 | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 66W | 1 | Not Qualified | 13 ns | 10ns | 14 ns | 85 ns | 8.1A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 66W Tc | TO-220AB | 22A | 0.52Ohm | N-Channel | 512pF @ 100V | 520m Ω @ 2.8A, 10V | 3.5V @ 230μA | 8.1A Tc | 23.4nC @ 10V | 10V | ±20V |
