Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPI80N06S407AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s407atma2-datasheets-1177.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 79W Tc | 80A | 320A | 0.0071Ohm | 71 mJ | N-Channel | 4500pF @ 25V | 7.4m Ω @ 80A, 10V | 4V @ 40μA | 80A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N06S405ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd90n06s405atma2-datasheets-0263.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 107W Tc | N-Channel | 6500pF @ 25V | 5.1m Ω @ 90A, 10V | 4V @ 60μA | 90A Tc | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI45N06S409AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipi45n06s409aksa2-datasheets-1344.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 71W Tc | 45A | 180A | 0.0094Ohm | 97 mJ | N-Channel | 3785pF @ 25V | 9.4m Ω @ 45A, 10V | 4V @ 34μA | 45A Tc | 47nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N06S4L05ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd90n06s4l05atma2-datasheets-1056.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 107W Tc | 90A | 360A | 0.0046Ohm | 135 mJ | N-Channel | 8180pF @ 25V | 4.6m Ω @ 90A, 10V | 2.2V @ 60μA | 90A Tc | 110nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IPP60R600C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp60r600c6xksa1-datasheets-5574.pdf | TO-220-3 | 3 | yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 63W Tc | TO-220AB | 7.3A | 19A | 0.6Ohm | 133 mJ | N-Channel | 440pF @ 100V | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 7.3A Tc | 20.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPI80N06S4L07AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80n06s4l07aksa2-datasheets-7616.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 79W Tc | 80A | 320A | 0.0064Ohm | 71 mJ | N-Channel | 5680pF @ 25V | 6.7m Ω @ 80A, 10V | 2.2V @ 40μA | 80A Tc | 75nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB90N06S404ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb90n06s404atma2-datasheets-4761.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 150W Tc | 90A | 360A | 0.0037Ohm | 331 mJ | N-Channel | 10400pF @ 25V | 3.7m Ω @ 90A, 10V | 4V @ 90μA | 90A Tc | 128nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD90N06S4L06ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd90n06s4l06atma2-datasheets-9762.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | ULTRA-LOW RESISTANCE | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 79W Tc | 90A | 360A | 0.0063Ohm | 67 mJ | N-Channel | 5680pF @ 25V | 6.3m Ω @ 90A, 10V | 2.2V @ 40μA | 90A Tc | 75nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IPI052NE7N3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp052ne7n3gxksa1-datasheets-5325.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 75V | 75V | 150W Tc | 80A | 320A | 0.0052Ohm | 370 mJ | N-Channel | 4750pF @ 37.5V | 5.2m Ω @ 80A, 10V | 3.8V @ 91μA | 80A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD90N06S404ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd90n06s404atma2-datasheets-1285.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | EAR99 | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 150W Tc | 90A | 360A | 0.0038Ohm | 331 mJ | N-Channel | 10400pF @ 25V | 3.8m Ω @ 90A, 10V | 4V @ 90μA | 90A Tc | 128nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPD30N06S4L23ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd30n06s4l23atma2-datasheets-0048.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 36W Tc | 30A | 120A | 0.023Ohm | 18 mJ | N-Channel | 1560pF @ 25V | 23m Ω @ 30A, 10V | 2.2V @ 10μA | 30A Tc | 21nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD50N06S4L08ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50n06s4l08atma2-datasheets-0839.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 60V | 71W Tc | N-Channel | 4780pF @ 25V | 7.8mOhm @ 50A, 10V | 2.2V @ 35μA | 50A Tc | 64nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI50R199CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi50r199cpxksa1-datasheets-5533.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 8 Weeks | 3 | yes | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 35 ns | 14ns | 10 ns | 80 ns | 17A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 139W Tc | 40A | 0.199Ohm | N-Channel | 1800pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 17A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPI120N06S4H1AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp120n06s4h1aksa2-datasheets-1522.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 30 ns | 5ns | 15 ns | 60 ns | 120A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | 480A | 0.0024Ohm | 1060 mJ | N-Channel | 21900pF @ 25V | 2.4m Ω @ 100A, 10V | 4V @ 200μA | 120A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| RSS065N03FU6TB | ROHM Semiconductor | $4.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss065n03tb-datasheets-1085.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 27mOhm | 8 | EAR99 | No | 2W | 8 ns | 8ns | 8 ns | 31 ns | 6.5A | 20V | 30V | 2.5V | 2W Ta | 30V | N-Channel | 430pF @ 10V | 2.5 V | 26m Ω @ 6.5A, 10V | 2.5V @ 1mA | 6.5A Ta | 6.1nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| RSS080N05FU6TB | ROHM Semiconductor | $7.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 8A | 60V | N-Channel | 8A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB45N06S409ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi45n06s409aksa2-datasheets-1344.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 71W Tc | N-Channel | 3785pF @ 25V | 9.1m Ω @ 45A, 10V | 4V @ 34μA | 45A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N06S403ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb120n06s403atma2-datasheets-8197.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 167W Tc | 120A | 480A | 0.0028Ohm | 392 mJ | N-Channel | 13150pF @ 25V | 2.8m Ω @ 100A, 10V | 4V @ 120μA | 120A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSZ120P03NS3EGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsz120p03ns3egatma1-datasheets-5472.pdf | 8-PowerTDFN | Contains Lead | 5 | 10 Weeks | 8 | no | EAR99 | ESD PROTECTED | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 52W | 1 | Not Qualified | S-PDSO-N5 | 11ns | 40A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2.1W Ta 52W Tc | 0.02Ohm | 73 mJ | P-Channel | 3360pF @ 15V | 12m Ω @ 20A, 10V | 3.1V @ 73μA | 11A Ta 40A Tc | 45nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||
| RSS130N03FU6TB | ROHM Semiconductor | $13.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss130n03fu6tb-datasheets-5480.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 11.1MOhm | 8 | yes | EAR99 | No | 2W | FET General Purpose Power | 13 ns | 30ns | 55 ns | 88 ns | 13A | 20V | 30V | Single | 2W Ta | 30V | N-Channel | 2000pF @ 10V | 2.5 V | 8.1m Ω @ 13A, 10V | 2.5V @ 1mA | 13A Ta | 35nC @ 5V | 4V 10V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S405ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s405atma2-datasheets-0964.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 107W Tc | 80A | 320A | 0.0057Ohm | 152 mJ | N-Channel | 6500pF @ 25V | 5.4m Ω @ 80A, 10V | 4V @ 60μA | 80A Tc | 81nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPA60R520C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipa60r520c6xksa1-datasheets-5489.pdf | TO-220-3 Full Pack | 3 | 52 Weeks | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 29W Tc | TO-220AB | 8.1A | 22A | 0.52Ohm | 153 mJ | N-Channel | 512pF @ 100V | 520m Ω @ 2.8A, 10V | 3.5V @ 230μA | 8.1A Tc | 23.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TK40P03M1(T6RSS-Q) | Toshiba Semiconductor and Storage | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 33W | DP | 1.15nF | 15ns | 14 ns | 40A | 20V | 30V | N-Channel | 1150pF @ 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100μA | 40A Ta | 17.5nC @ 10V | 10.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N06S4L03ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd90n06s4l03atma2-datasheets-4239.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 150W Tc | 90A | 360A | 0.0035Ohm | 331 mJ | N-Channel | 13000pF @ 25V | 3.5m Ω @ 90A, 10V | 2.2V @ 90μA | 90A Tc | 170nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| BSB053N03LP G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-bsb053n03lpg-datasheets-5433.pdf | 3-WDSON | 3 | EAR99 | AVALANCHE RATED | compliant | e3 | MATTE TIN | YES | BOTTOM | NO LEAD | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.3W Ta 42W Tc | 17A | 284A | 0.0053Ohm | 75 mJ | N-Channel | 2700pF @ 15V | 5.3m Ω @ 30A, 10V | 2.2V @ 250μA | 17A Ta 71A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSB019N03LX G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsb019n03lxg-datasheets-5437.pdf | 3-WDSON | 3 | EAR99 | AVALANCHE RATED | compliant | e3 | MATTE TIN | YES | BOTTOM | NO LEAD | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 89W Tc | 31A | 400A | 0.0019Ohm | 290 mJ | N-Channel | 8400pF @ 15V | 1.9m Ω @ 30A, 10V | 2.2V @ 250μA | 32A Ta 174A Tc | 92nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPB120N06S4H1ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp120n06s4h1aksa2-datasheets-1522.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 250W Tc | 120A | 480A | 0.0021Ohm | 1060 mJ | N-Channel | 21900pF @ 25V | 2.1m Ω @ 100A, 10V | 4V @ 200μA | 120A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S4L07ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80n06s4l07aksa2-datasheets-7616.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 79W Tc | 80A | 320A | 0.0064Ohm | 71 mJ | N-Channel | 5680pF @ 25V | 6.4m Ω @ 80A, 10V | 2.2V @ 40μA | 80A Tc | 75nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| TPCC8103(TE12L,QM) | Toshiba Semiconductor and Storage | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 9.3ns | 68 ns | 18A | 20V | 30V | 700mW Ta 27W Tc | P-Channel | 1600pF @ 10V | 12m Ω @ 9A, 10V | 2V @ 1mA | 18A Ta | 38nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J307T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 700μm | 1.6mm | 3 | No | Single | 35 ns | 160 ns | 5A | 8V | 20V | 700mW Ta | P-Channel | 1170pF @ 10V | 31m Ω @ 4A, 4.5V | 1V @ 1mA | 5A Ta | 19nC @ 4.5V | 1.5V 4.5V | ±8V |
