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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTJS4405NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntjs4405nt4g-datasheets-5439.pdf | 25V | 1A | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | EAR99 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 6 | 40 | 630mW | 1 | Not Qualified | R-PDSO-G6 | 4.7ns | 4.7 ns | 25 ns | 1A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 630mW Ta | 1A | 0.35Ohm | 12 pF | 25V | N-Channel | 60pF @ 10V | 350m Ω @ 600mA, 4.5V | 1.5V @ 250μA | 1A Ta | 1.5nC @ 4.5V | 2.7V 4.5V | ±8V | ||||||||||||||||||||||||||
| APL602J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apl602j-datasheets-4027.pdf | 600V | 43A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 22 Weeks | 30.000004g | 4 | UL RECOGNIZED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 4 | 1 | Single | 565W | 1 | FET General Purpose Power | 13 ns | 24ns | 14 ns | 58 ns | 43A | 30V | SILICON | ISOLATED | AMPLIFIER | 565W Tc | 3000 mJ | 600V | N-Channel | 9000pF @ 25V | 125m Ω @ 21.5A, 12V | 4V @ 2.5mA | 43A Tc | 12V | ±30V | ||||||||||||||||||||||
| NTR1P02T3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-ntr1p02t1g-datasheets-9227.pdf | -20V | -1A | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 400mW | 1 | Other Transistors | Not Qualified | 9ns | 9 ns | 9 ns | 1A | 20V | SILICON | SWITCHING | 400mW Ta | 1A | -20V | P-Channel | 165pF @ 5V | 180m Ω @ 1.5A, 10V | 2.3V @ 250μA | 1A Ta | 2.5nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| NTY100N10G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nty100n10-datasheets-4003.pdf | 100V | 123A | TO-264-3, TO-264AA | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 2 weeks ago) | yes | EAR99 | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 313W | 1 | FET General Purpose Power | Not Qualified | 150ns | 250 ns | 340 ns | 123A | 20V | SILICON | SWITCHING | 313W Tc | 0.01Ohm | 500 mJ | 100V | N-Channel | 10110pF @ 25V | 10m Ω @ 50A, 10V | 4V @ 250μA | 123A Tc | 350nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| NTD24N06L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd24n06l-datasheets-5446.pdf | 60V | 24A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | GULL WING | 240 | 3 | Single | 30 | 62.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 97ns | 52 ns | 23 ns | 24A | 15V | SILICON | DRAIN | SWITCHING | 1.36W Ta 62.5W Tj | 72A | 0.045Ohm | 162 mJ | 60V | N-Channel | 1140pF @ 25V | 45m Ω @ 10A, 5V | 2V @ 250μA | 24A Ta | 32nC @ 5V | 5V | ±15V | |||||||||||||||||||||
| APT20M38BVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 200V | 67A | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE ENERGY RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 370W | 1 | FET General Purpose Power | R-PSFM-T3 | 14 ns | 21ns | 10 ns | 18 ns | 67A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 370W Tc | TO-247AD | 268A | 0.038Ohm | N-Channel | 6120pF @ 25V | 38m Ω @ 500mA, 10V | 4V @ 1mA | 67A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| APT23F60B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt23f60b-datasheets-4039.pdf | 600V | 23A | TO-247-3 | Lead Free | 3 | 22 Weeks | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 415W | 1 | R-PSFM-T3 | 25 ns | 29ns | 23 ns | 75 ns | 24A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 415W Tc | TO-247AD | 80A | 0.29Ohm | N-Channel | 4415pF @ 25V | 290m Ω @ 11A, 10V | 5V @ 1mA | 24A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| NTD24N06L-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd24n06l1g-datasheets-5451.pdf | 60V | 24A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 2 | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 62.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 97ns | 52 ns | 23 ns | 24A | 15V | SILICON | DRAIN | SWITCHING | 1.36W Ta 62.5W Tj | 72A | 0.045Ohm | 162 mJ | 60V | N-Channel | 1140pF @ 25V | 45m Ω @ 10A, 5V | 2V @ 250μA | 24A Ta | 32nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||
| APT22F120L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt22f120b2-datasheets-4011.pdf | 1.2kV | 22A | TO-264-3, TO-264AA | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Pure Matte Tin (Sn) | SINGLE | 3 | 1.04kW | 1 | R-PSFM-T3 | 45 ns | 27ns | 42 ns | 145 ns | 23A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1040W Tc | 90A | 0.7Ohm | N-Channel | 8370pF @ 25V | 700m Ω @ 12A, 10V | 5V @ 2.5mA | 23A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| APT17N80BC3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt17n80bc3g-datasheets-4044.pdf | 800V | 17A | TO-247-3 | Lead Free | 3 | yes | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 17A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 208W Tc | 51A | 0.29Ohm | 670 mJ | N-Channel | 2250pF @ 25V | 290m Ω @ 11A, 10V | 3.9V @ 1mA | 17A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| NTR0202PLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntr0202plt1g-datasheets-4482.pdf | -20V | -400mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | 8541.21.00.95 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 225mW | 1 | Other Transistors | Not Qualified | 6ns | 6 ns | 18 ns | 400mA | 20V | SILICON | SWITCHING | 225mW Ta | 0.4A | 0.8Ohm | -20V | P-Channel | 70pF @ 5V | 800m Ω @ 200mA, 10V | 2.3V @ 250μA | 400mA Ta | 2.18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| NTP35N15G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ntp35n15g-datasheets-4019.pdf | 150V | 37A | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | AVALANCHE RATED | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 178W | 1 | FET General Purpose Power | Not Qualified | 125ns | 120 ns | 90 ns | 37A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta 178W Tj | TO-220AB | 0.05Ohm | 700 mJ | 150V | N-Channel | 3200pF @ 25V | 50m Ω @ 18.5A, 10V | 4V @ 250μA | 37A Ta | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| NTMFS4701NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4701nt3g-datasheets-4021.pdf | 30V | 12.3A | 8-PowerTDFN, 5 Leads | Lead Free | 5 | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | 260 | 8 | Single | 40 | 2.3W | 1 | Not Qualified | R-PDSO-F5 | 4ns | 19 ns | 29 ns | 7.7A | 20V | SILICON | DRAIN | SWITCHING | 900mW Ta | 0.008Ohm | 30V | N-Channel | 1280pF @ 24V | 8m Ω @ 20A, 10V | 3V @ 250μA | 7.7A Ta | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| APT20F50B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20f50b-datasheets-3992.pdf | 500V | 20A | TO-247-3 | Lead Free | 3 | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 290W | 1 | R-PSFM-T3 | 13 ns | 15ns | 11 ns | 34 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 290W Tc | 60A | 0.3Ohm | 405 mJ | N-Channel | 2950pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 500μA | 20A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| NTR4503NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntr4503nt1g-datasheets-9070.pdf | 30V | 2A | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 2 weeks ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 40 | 730mW | 1 | FET General Purpose Power | Not Qualified | 6.7ns | 6.7 ns | 13.6 ns | 1.5A | 20V | SILICON | SWITCHING | 420mW Ta | 2A | 0.11Ohm | 25 pF | 30V | N-Channel | 250pF @ 24V | 110m Ω @ 2.5A, 10V | 3V @ 250μA | 1.5A Ta | 7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| VN2222LLRLRA | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-vn2222ll-datasheets-6317.pdf | 60V | 150mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Contains Lead | 3 | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn80Pb20) | BOTTOM | 240 | 3 | Single | 30 | 400mW | 1 | FET General Purpose Power | Not Qualified | O-PBCY-T3 | 10 ns | 150mA | 20V | SILICON | SWITCHING | 400mW Ta | 0.15A | 5 pF | 60V | N-Channel | 60pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 1mA | 150mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||
| NTR4501NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntr4501nt1g-datasheets-3712.pdf | 20V | 3.2A | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 40 | 1.25W | 1 | FET General Purpose Power | Not Qualified | 12ns | 12 ns | 12 ns | 3.2A | 12V | SILICON | SWITCHING | 1.25W Tj | 0.08Ohm | 20V | N-Channel | 200pF @ 10V | 80m Ω @ 3.6A, 4.5V | 1.2V @ 250μA | 3.2A Ta | 6nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||
| NTR4503NT3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntr4503nt1g-datasheets-9070.pdf | 30V | 2A | TO-236-3, SC-59, SOT-23-3 | Contains Lead | not_compliant | Single | 730mW | 6.7ns | 6.7 ns | 13.6 ns | 1.5A | 20V | 420mW Ta | 30V | N-Channel | 250pF @ 24V | 110m Ω @ 2.5A, 10V | 3V @ 250μA | 1.5A Ta | 7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTY100N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nty100n10-datasheets-4003.pdf | 100V | 123A | TO-264-3, TO-264AA | Contains Lead | 3 | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | 240 | 3 | Single | 30 | 313W | 1 | FET General Purpose Power | Not Qualified | 150ns | 250 ns | 340 ns | 123A | 20V | SILICON | SWITCHING | 313W Tc | 0.01Ohm | 500 mJ | 100V | N-Channel | 10110pF @ 25V | 10m Ω @ 50A, 10V | 4V @ 250μA | 123A Tc | 350nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| NTS4101PT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nts4101pt1g-datasheets-2021.pdf | -20V | -1.37A | SC-70, SOT-323 | Contains Lead | 3 | 3 | OBSOLETE (Last Updated: 1 week ago) | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 329mW | 1 | Other Transistors | Not Qualified | 14.9ns | 14.9 ns | 26 ns | 1.37A | 8V | SILICON | SWITCHING | 20V | 329mW Ta | 0.12Ohm | 85 pF | -20V | P-Channel | 840pF @ 20V | 120m Ω @ 1A, 4.5V | 1.5V @ 100μA | 1.37A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||
| NTZS3151PT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntzs3151pt5g-datasheets-4006.pdf | -20V | -860mA | SOT-563, SOT-666 | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | 6 | Single | 40 | 170mW | 1 | Not Qualified | 12ns | 12 ns | 23.7 ns | 860mA | 8V | SILICON | SWITCHING | 20V | 170mW Ta | 0.15Ohm | -20V | P-Channel | 458pF @ 16V | 150m Ω @ 950mA, 4.5V | 1V @ 250μA | 860mA Ta | 5.6nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||
| APT1204R7KFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt1204r7kfllg-datasheets-4008.pdf | 1.2kV | 3.5A | TO-220-3 | Lead Free | 3 | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 135W | 1 | 7 ns | 2ns | 24 ns | 20 ns | 3.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 135W Tc | TO-220AB | 425 mJ | N-Channel | 715pF @ 25V | 4.7 Ω @ 1.75A, 10V | 5V @ 1mA | 3.5A Tc | 31nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| APT22F120B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt22f120b2-datasheets-4011.pdf | 1.2kV | 22A | TO-247-3 Variant | Lead Free | 3 | 3 | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1.04kW | 1 | 45 ns | 27ns | 42 ns | 145 ns | 23A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1040W Tc | 90A | 0.7Ohm | N-Channel | 8370pF @ 25V | 700m Ω @ 12A, 10V | 5V @ 2.5mA | 23A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| APT10M11B2VFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10m11b2vfrg-datasheets-4013.pdf | 100V | 100A | TO-247-3 Variant | Lead Free | 3 | yes | EAR99 | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | 400A | 0.011Ohm | 2500 mJ | N-Channel | 10300pF @ 25V | 11m Ω @ 500mA, 10V | 4V @ 2.5mA | 100A Tc | 450nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| NTR4502PT3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntr4502pt1g-datasheets-9118.pdf | -30V | -1.95A | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 3 | Single | 30 | 1.25W | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | 12ns | 12 ns | 19 ns | 1.13A | -20V | SILICON | SWITCHING | 30V | 400mW Tj | TO-236AB | 0.2Ohm | -30V | P-Channel | 200pF @ 15V | 200m Ω @ 1.95A, 10V | 3V @ 250μA | 1.13A Ta | 10nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| APT12M80B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt12m80b-datasheets-4015.pdf | 800V | 12A | TO-247-3 | Lead Free | 3 | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 335W | 1 | R-PSFM-T3 | 14 ns | 20ns | 18 ns | 60 ns | 13A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 335W Tc | TO-247AD | 45A | 0.8Ohm | 525 mJ | N-Channel | 2470pF @ 25V | 800m Ω @ 6A, 10V | 5V @ 1mA | 13A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| NTD95N02RG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd95n02r1g-datasheets-3859.pdf | 24V | 95A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | GULL WING | 260 | 4 | Single | 40 | 86W | 1 | Not Qualified | R-PSSO-G2 | 82ns | 70 ns | 26 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 1.25W Ta 86W Tc | 0.005Ohm | 24V | N-Channel | 2400pF @ 20V | 5m Ω @ 20A, 10V | 2V @ 250μA | 12A Ta 32A Tc | 21nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| APT11N80KC3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 800V | 11A | TO-220-3 | 10.66mm | 9.66mm | 4.82mm | Lead Free | 3 | 6.000006g | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 156W | 1 | 25 ns | 15ns | 7 ns | 70 ns | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 156W Tc | TO-220AB | 0.45Ohm | 470 mJ | N-Channel | 1585pF @ 25V | 450m Ω @ 7.1A, 10V | 3.9V @ 680μA | 11A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| NTMFS4122NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4122nt1g-datasheets-8974.pdf | 30V | 14A | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 5 | LAST SHIPMENTS (Last Updated: 2 weeks ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | 260 | 5 | 40 | 2.2W | 1 | FET General Purpose Power | Not Qualified | 20ns | 31 ns | 30 ns | 9.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900mW Ta | 0.006Ohm | 30V | N-Channel | 2310pF @ 24V | 6m Ω @ 14A, 10V | 2.5V @ 250μA | 9.1A Ta | 30nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| NTR4501NT3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntr4501nt1g-datasheets-3712.pdf | 20V | 3.2A | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 3 | Single | 30 | 1.25W | 1 | FET General Purpose Power | Not Qualified | 12ns | 12 ns | 12 ns | 3.2A | 12V | SILICON | SWITCHING | 1.25W Tj | 10A | 0.08Ohm | 20V | N-Channel | 200pF @ 10V | 80m Ω @ 3.6A, 4.5V | 1.2V @ 250μA | 3.2A Ta | 6nC @ 4.5V | 1.8V 4.5V | ±12V |
