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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTD5406NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/onsemiconductor-std5406nt4g-datasheets-9207.pdf | 40V | 70A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 3 | CONSULT SALES OFFICE (Last Updated: 2 days ago) | yes | EAR99 | No | 3 | Single | 100W | 1 | 7.2 ns | 147ns | 29 ns | 20 ns | 70A | 20V | 3W Ta 100W Tc | 40V | N-Channel | 2500pF @ 32V | 10m Ω @ 30A, 10V | 3.5V @ 250μA | 12.2A Ta 70A Tc | 45nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDM6296 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdm6296-datasheets-4208.pdf | 8-PowerVDFN | compliant | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.1W Ta | N-Channel | 2005pF @ 15V | 10.5m Ω @ 11.5A, 10V | 3V @ 250μA | 11.5A Ta | 17nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT41M80L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt41m80b2-datasheets-0791.pdf | 800V | 41A | TO-264-3, TO-264AA | Lead Free | 3 | 22 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1.04kW | 1 | R-PSFM-T3 | 46 ns | 65ns | 60 ns | 200 ns | 43A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1040W Tc | N-Channel | 8070pF @ 25V | 210m Ω @ 20A, 10V | 5V @ 2.5mA | 43A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFV52N30P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n30p-datasheets-7139.pdf | TO-220-3, Short Tab | Lead Free | 3 | 66MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 22ns | 20 ns | 60 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 150A | 1000 mJ | 300V | N-Channel | 3490pF @ 25V | 66m Ω @ 500mA, 10V | 5V @ 4mA | 52A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFR2607ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfr2607ztrpbf-datasheets-9951.pdf&product=infineontechnologies-irfr2607zpbf-6866731 | 75V | 42A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.2606mm | 6.22mm | Contains Lead, Lead Free | 12 Weeks | No SVHC | 22MOhm | 3 | EAR99 | Tin | No | Single | 110W | 1 | 14 ns | 59ns | 28 ns | 39 ns | 42A | 20V | 75V | 4V | 110W Tc | N-Channel | 1440pF @ 25V | 2 V | 22m Ω @ 30A, 10V | 4V @ 50μA | 42A Tc | 51nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDD3N40TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdd3n40tf-datasheets-4126.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 400V | 30W Tc | N-Channel | 225pF @ 25V | 3.4Ohm @ 1A, 10V | 5V @ 250μA | 2A Tc | 6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5016BFLLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt5016bfllg-datasheets-4127.pdf | 500V | 30A | TO-247-3 | Lead Free | 3 | 22 Weeks | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | R-PSFM-T3 | 10 ns | 10ns | 14 ns | 27 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 329W Tc | TO-247AD | N-Channel | 2833pF @ 25V | 160m Ω @ 15A, 10V | 5V @ 1mA | 30A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| HAT2197R-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/renesaselectronicsamerica-hat2197rele-datasheets-4128.pdf | 30V | 16A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 16 Weeks | 8 | yes | EAR99 | No | DUAL | GULL WING | 260 | 8 | 1 | FET General Purpose Power | 10 ns | 25ns | 4.2 ns | 45 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 0.0099Ohm | N-Channel | 2650pF @ 10V | 6.7m Ω @ 8A, 10V | 16A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| APT14050JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt14050jvfr-datasheets-4131.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 23A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1400V | 1400V | 694W Tc | 92A | 0.5Ohm | 3600 mJ | N-Channel | 13500pF @ 25V | 500m Ω @ 11.5A, 10V | 4V @ 5mA | 23A Tc | 820nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APT7F80K | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt7f80k-datasheets-4132.pdf | 800V | 7.1A | TO-220-3 | Lead Free | 3 | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 225W | 1 | R-PSFM-T3 | 8 ns | 11ns | 10 ns | 33 ns | 7A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 225W Tc | TO-220AB | 7A | 25A | 285 mJ | N-Channel | 1335pF @ 25V | 1.5 Ω @ 4A, 10V | 5V @ 500μA | 7A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| APT40M35JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt40m35jvfr-datasheets-4135.pdf | 400V | 93A | SOT-227-4, miniBLOC | Lead Free | 4 | 22 Weeks | 4 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 700W | 1 | FET General Purpose Power | 20 ns | 30ns | 14 ns | 75 ns | 93A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700W Tc | 372A | 0.035Ohm | 3600 mJ | N-Channel | 20160pF @ 25V | 35m Ω @ 46.5A, 10V | 4V @ 5mA | 93A Tc | 1065nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APT30M70SVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | 300V | 48A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 3 | yes | EAR99 | No | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 370W | 1 | R-PSSO-G2 | 14 ns | 21ns | 10 ns | 57 ns | 48A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 370W Tc | 0.07Ohm | N-Channel | 5870pF @ 25V | 70m Ω @ 500mA, 10V | 4V @ 1mA | 48A Tc | 225nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APT6M100K | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt6m100k-datasheets-4145.pdf | 1kV | 5.8A | TO-220-3 | 10.26mm | 9.19mm | 4.72mm | Lead Free | 3 | 6.000006g | yes | FAST SWITCHING, AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 225W | 1 | FET General Purpose Power | R-PSFM-T3 | 6.4 ns | 5.8ns | 5.4 ns | 22 ns | 6A | 30V | SILICON | Single | DRAIN | SWITCHING | 1000V | 225W Tc | TO-220AB | 6A | 20A | N-Channel | 1410pF @ 25V | 2.5 Ω @ 3A, 10V | 5V @ 1mA | 6A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| APT55M50JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt55m50jfll-datasheets-4151.pdf | 550V | 77A | SOT-227-4, miniBLOC | Lead Free | 4 | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 77A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 694W Tc | 308A | 0.05Ohm | 3600 mJ | N-Channel | 12400pF @ 25V | 50m Ω @ 38.5A, 10V | 5V @ 5mA | 77A Tc | 265nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FDD6N25TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdd6n25tf-datasheets-4152.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | Single | 50W | 25ns | 12 ns | 7 ns | 4.4A | 30V | 50W Tc | 250V | N-Channel | 250pF @ 25V | 1.1 Ω @ 2.2A, 10V | 5V @ 250μA | 4.4A Tc | 6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC042N03S G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc042n03sg-datasheets-4148.pdf | 8-PowerTDFN | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 62.5W Tc | 20A | 200A | 0.0065Ohm | 280 mJ | N-Channel | 3660pF @ 15V | 4.2m Ω @ 50A, 10V | 2V @ 50μA | 20A Ta 95A Tc | 28nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDZ493P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdz493p-datasheets-4153.pdf | 9-WFBGA | 9-BGA (1.55x1.55) | 20V | 1.7W Ta | P-Channel | 754pF @ 10V | 46mOhm @ 4.6A, 4.5V | 1.5V @ 250μA | 4.6A Ta | 11nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6643TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineontechnologies-irf6643trpbf-datasheets-4633.pdf | 150V | 6.2A | DirectFET™ Isometric MZ | 5.45mm | 508μm | 5.05mm | Lead Free | No SVHC | 34.5MOhm | 7 | No | Single | 2.8W | 1 | DIRECTFET™ MZ | 2.34nF | 9.2 ns | 5ns | 4.4 ns | 13 ns | 6.2A | 20V | 150V | 150V | 4V | 2.8W Ta 89W Tc | 100 ns | 29mOhm | 150V | N-Channel | 2340pF @ 25V | 4 V | 34.5mOhm @ 7.6A, 10V | 4.9V @ 150μA | 6.2A Ta 35A Tc | 55nC @ 10V | 34.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| APT60M80L2VRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt60m80l2vrg-datasheets-4119.pdf | 600V | 65A | TO-264-3, TO-264AA | Lead Free | 3 | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 833W | 1 | 14 ns | 24ns | 31 ns | 70 ns | 65A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 833W Tc | 260A | 0.08Ohm | N-Channel | 13300pF @ 25V | 80m Ω @ 32.5A, 10V | 4V @ 5mA | 65A Tc | 590nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| APT29F100L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt29f100b2-datasheets-2224.pdf | 1kV | 29A | TO-264-3, TO-264AA | Lead Free | 3 | 22 Weeks | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1.04kW | 1 | R-PSFM-T3 | 39 ns | 35ns | 33 ns | 130 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1040W Tc | 0.44Ohm | N-Channel | 8500pF @ 25V | 460m Ω @ 16A, 10V | 5V @ 2.5mA | 30A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APT32M80J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt32m80j-datasheets-4090.pdf | 800V | 32A | SOT-227-4, miniBLOC | Lead Free | 4 | 22 Weeks | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 1 | 53 ns | 76ns | 67 ns | 231 ns | 33A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 543W Tc | N-Channel | 9326pF @ 25V | 190m Ω @ 24A, 10V | 5V @ 2.5mA | 33A Tc | 303nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| APT5018BLLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt5018sllg-datasheets-4375.pdf | 500V | 27A | TO-247-3 | Lead Free | 3 | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 300W | 1 | R-PSFM-T3 | 9 ns | 4ns | 2 ns | 18 ns | 27A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | TO-247AD | N-Channel | 2596pF @ 25V | 180m Ω @ 13.5A, 10V | 5V @ 1mA | 27A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| HAT2175H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-hat2175hele-datasheets-4093.pdf | 300V | 15A | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 20 | 15W | 1 | FET General Purpose Power | R-PSSO-G4 | 17 ns | 8.2ns | 4.7 ns | 28 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 15W Tc | 60A | 0.046Ohm | N-Channel | 1445pF @ 10V | 42m Ω @ 7.5A, 10V | 15A Ta | 21nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| APT60M80JVR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemi-apt60m80jvr-datasheets-5489.pdf | 600V | 55A | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 568W | 1 | FET General Purpose Power | 15 ns | 25ns | 31 ns | 73 ns | 55A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 568W Tc | 220A | 0.08Ohm | 3200 mJ | N-Channel | 14500pF @ 25V | 80m Ω @ 500mA, 10V | 4V @ 5mA | 55A Tc | 870nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APT5510JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5510jfll-datasheets-4097.pdf | 550V | 44A | SOT-227-4, miniBLOC | Lead Free | 4 | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 44A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 463W Tc | 176A | 0.1Ohm | 2500 mJ | N-Channel | 5823pF @ 25V | 100m Ω @ 22A, 10V | 5V @ 2.5mA | 44A Tc | 124nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APT28F60B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 600V | 28A | TO-247-3 | Lead Free | 3 | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 520W | 1 | R-PSFM-T3 | 31 ns | 36ns | 29 ns | 95 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | TO-247AD | 0.22Ohm | 780 mJ | N-Channel | 5575pF @ 25V | 250m Ω @ 14A, 10V | 5V @ 1mA | 30A Tc | 140nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APT17N80SC3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt17n80bc3g-datasheets-4044.pdf | 800V | 17A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | AVALANCHE RATED | unknown | e3 | PURE MATTE TIN | SINGLE | GULL WING | 245 | 3 | 30 | 1 | Not Qualified | R-PSSO-G2 | 17A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 208W Tc | 51A | 0.29Ohm | 670 mJ | N-Channel | 2250pF @ 25V | 290m Ω @ 11A, 10V | 3.9V @ 1mA | 17A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| APT31M100B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt31m100b2-datasheets-4101.pdf | 1kV | 31A | TO-247-3 Variant | Lead Free | 3 | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Pure Matte Tin (Sn) | SINGLE | 3 | 1.04kW | 1 | 39 ns | 35ns | 33 ns | 130 ns | 32A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1040W Tc | N-Channel | 8500pF @ 25V | 380m Ω @ 16A, 10V | 5V @ 2.5mA | 32A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APT6017B2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | 600V | 35A | TO-247-3 Variant | Lead Free | 3 | 3 | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 500W | 1 | 11 ns | 7ns | 6 ns | 26 ns | 35A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500W Tc | N-Channel | 4500pF @ 25V | 170m Ω @ 17.5A, 10V | 5V @ 2.5mA | 35A Tc | 100nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| APT60M75JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | 600V | 62A | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | AVALANCHE ENERGY RATED | No | UPPER | UNSPECIFIED | 4 | 700W | 1 | 62A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700W Tc | 0.075Ohm | 3600 mJ | N-Channel | 19800pF @ 25V | 75m Ω @ 31A, 10V | 4V @ 5mA | 62A Tc | 1050nC @ 10V | 10V | ±30V |
