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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FMD80-0045PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-fmd800045ps-datasheets-4339.pdf | i4-Pac™-5 | 5 | 5 | EAR99 | HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | Not Qualified | 150A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 0.0049Ohm | N-Channel | 4.9m Ω @ 110A, 10V | 4V @ 1mA | 150A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH24N50Q | IXYS | $6.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n50q-datasheets-4238.pdf | TO-247-3 | Lead Free | 3 | 230mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | 30ns | 16 ns | 55 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 96A | 500V | N-Channel | 3900pF @ 25V | 230m Ω @ 12A, 10V | 4.5V @ 4mA | 24A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFI7N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp7n80p-datasheets-9747.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | R-PSIP-T3 | 32ns | 24 ns | 55 ns | 7A | 30V | SILICON | SWITCHING | 200W Tc | TO-263 | 7A | 18A | 300 mJ | 800V | N-Channel | 1890pF @ 25V | 1.44 Ω @ 3.5A, 10V | 5V @ 1mA | 7A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFH16N90Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixfk16n90q-datasheets-0642.pdf | TO-247-3 | Lead Free | 3 | 650mOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 24ns | 14 ns | 56 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 64A | 1500 mJ | 900V | N-Channel | 4000pF @ 25V | 650m Ω @ 8A, 10V | 5V @ 4mA | 16A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFH40N50Q2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfh40n50q2-datasheets-4345.pdf | TO-247-3 | 3 | 6g | No SVHC | 140mOhm | 3 | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 13ns | 8 ns | 42 ns | 40A | 30V | 500V | SILICON | DRAIN | SWITCHING | 5V | 560W Tc | TO-247AD | 250 ns | 160A | 2500 mJ | 500V | N-Channel | 4850pF @ 25V | 5 V | 160m Ω @ 500mA, 10V | 4.5V @ 4mA | 40A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FDD8444L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdd8444l-datasheets-4261.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | AEC-Q101 | GULL WING | Single | 153W | 1 | FET General Purpose Power | R-PSSO-G2 | 18.7 ns | 46ns | 19.2 ns | 42 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 153W Tc | 16A | 0.0065Ohm | 295 mJ | 40V | N-Channel | 5530pF @ 25V | 5.2m Ω @ 50A, 10V | 3V @ 250μA | 16A Ta 50A Tc | 60nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXCP01N90E | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixcp01n90e-datasheets-4320.pdf | TO-220-3 | 3 | 3 | yes | e0 | Tin/Lead (Sn/Pb) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 61 ns | 250mA | SILICON | DRAIN | SWITCHING | 40W Tc | TO-220AB | 175A | 0.08Ohm | 900V | N-Channel | 133pF @ 25V | 80 Ω @ 50mA, 10V | 5V @ 25μA | 250mA Tc | 7.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDM100-0045SP | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-fdm1000045sp-datasheets-4322.pdf | i4-Pac™-5 | 5 | 5 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | SINGLE | 260 | 5 | 35 | 1 | Not Qualified | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 0.0072Ohm | N-Channel | 7.2m Ω @ 80A, 10V | 4V @ 1mA | 100A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK26N90 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfx26n90-datasheets-7456.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 60 ns | 35ns | 24 ns | 130 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 104A | 900V | N-Channel | 10800pF @ 25V | 300m Ω @ 13A, 10V | 5V @ 8mA | 26A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFH21N50Q | IXYS | $16.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixft21n50q-datasheets-7416.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 250MOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 280W | 1 | Not Qualified | 28ns | 12 ns | 51 ns | 21A | 30V | SILICON | DRAIN | SWITCHING | 280W Tc | 84A | 1500 mJ | 500V | N-Channel | 3000pF @ 25V | 250m Ω @ 10.5A, 10V | 4.5V @ 4mA | 21A Tc | 84nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFH66N20Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh66n20q-datasheets-4327.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 18ns | 14 ns | 50 ns | 66A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 264A | 0.04Ohm | 1500 mJ | 200V | N-Channel | 3700pF @ 25V | 40m Ω @ 33A, 10V | 4V @ 4mA | 66A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFL60N60 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfl60n60-datasheets-4329.pdf | ISOPLUS264™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | Not Qualified | 52ns | 26 ns | 110 ns | 60A | 20V | SILICON | ISOLATED | SWITCHING | 700W Tc | 240A | 0.08Ohm | 4000 mJ | 600V | N-Channel | 10000pF @ 25V | 80m Ω @ 30A, 10V | 4V @ 8mA | 60A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFC74N20P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc74n20p-datasheets-4331.pdf | ISOPLUS220™ | 3 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 120W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 21ns | 21 ns | 60 ns | 35A | 20V | 200V | SILICON | ISOLATED | SWITCHING | 5V | 120W Tc | 200 ns | 200A | 0.036Ohm | 1000 mJ | 200V | N-Channel | 3300pF @ 25V | 5 V | 36m Ω @ 37A, 10V | 5V @ 4mA | 35A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFK15N100Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft15n100q-datasheets-7380.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 27ns | 14 ns | 67 ns | 15A | 20V | SILICON | DRAIN | 1000V | 360W Tc | 60A | 0.725Ohm | 1500 mJ | 1kV | N-Channel | 4500pF @ 25V | 700m Ω @ 500mA, 10V | 5V @ 4mA | 15A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFK32N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx32n50q-datasheets-8700.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 42ns | 20 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 416W Tc | 128A | 0.15Ohm | 1500 mJ | 500V | N-Channel | 3950pF @ 25V | 160m Ω @ 16A, 10V | 4.5V @ 4mA | 32A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFC52N30P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfc52n30p-datasheets-4304.pdf | ISOPLUS220™ | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | 22ns | 20 ns | 60 ns | 24A | 20V | SILICON | ISOLATED | SWITCHING | 100W Tc | 150A | 0.075Ohm | 1000 mJ | 300V | N-Channel | 3490pF @ 25V | 75m Ω @ 26A, 10V | 5V @ 4mA | 24A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFH13N80Q | IXYS | $7.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft13n80q-datasheets-4344.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 36ns | 19 ns | 55 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 250W Tc | 52A | 0.8Ohm | 750 mJ | 800V | N-Channel | 3250pF @ 25V | 700m Ω @ 6.5A, 10V | 4.5V @ 4mA | 13A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFC12N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc12n80p-datasheets-4312.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 120W | 1 | Not Qualified | 22ns | 22 ns | 62 ns | 7A | 30V | SILICON | ISOLATED | SWITCHING | 120W Tc | 7A | 1000 mJ | 800V | N-Channel | 2800pF @ 25V | 930m Ω @ 6A, 10V | 5.5V @ 2.5mA | 7A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFC20N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/ixys-ixfr20n80p-datasheets-4080.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | Not Qualified | 24ns | 25 ns | 70 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 166W Tc | 0.5Ohm | 1000 mJ | 800V | N-Channel | 4680pF @ 25V | 500m Ω @ 10A, 10V | 5V @ 4mA | 11A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| APT8024LVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 800V | 33A | TO-264-3, TO-264AA | Lead Free | No | 625W | 1 | 18 ns | 15ns | 9 ns | 65 ns | 33A | 30V | N-Channel | 7740pF @ 25V | 240m Ω @ 16.5A, 10V | 4V @ 2.5mA | 33A Tc | 425nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFF24N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixff24n100-datasheets-4316.pdf | i4-Pac™-5 (3 Leads) | 3 | 3 | HIGH VOLTAGE, HIGH RELIABILITY | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 75 ns | 22A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 120A | 1kV | N-Channel | 390m Ω @ 15A, 10V | 5V @ 8mA | 22A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N55Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n55q-datasheets-4284.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 375W | 1 | Not Qualified | 18ns | 13 ns | 50 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 375W Tc | TO-247AD | 104A | 1500 mJ | 550V | N-Channel | 3000pF @ 25V | 230m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH23N60Q | IXYS | $17.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft23n60q-datasheets-4403.pdf | TO-247-3 | 3 | 6g | No SVHC | 320mOhm | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 20ns | 20 ns | 45 ns | 23A | 30V | 600V | SILICON | DRAIN | SWITCHING | 4.5V | 400W Tc | TO-247AD | 250 ns | 92A | 1500 mJ | 600V | N-Channel | 3300pF @ 25V | 4.5 V | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 23A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFC96N15P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc96n15p-datasheets-4288.pdf | ISOPLUS220™ | 3 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 120W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 33ns | 18 ns | 66 ns | 42A | 20V | 150V | SILICON | ISOLATED | SWITCHING | 5V | 120W Tc | 200 ns | 250A | 0.026Ohm | 1000 mJ | 150V | N-Channel | 3500pF @ 25V | 5 V | 26m Ω @ 48A, 10V | 5V @ 4mA | 42A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| FDP8442 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp8442-datasheets-4290.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 254W Tc | TO-220AB | 23A | 0.0031Ohm | 720 mJ | N-Channel | 12200pF @ 25V | 3.1m Ω @ 80A, 10V | 4V @ 250μA | 23A Ta 80A Tc | 235nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFC10N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | ISOPLUS220™ | 3 | 220 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 100W | NOT SPECIFIED | 3 | 150°C | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSIP-T3 | 5A | SILICON | ISOLATED | SWITCHING | 5A | 1.2Ohm | 750 mJ | 800V | N-Channel | 5A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDZ7296 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdz7296-datasheets-4294.pdf | 18-WFBGA | 18-BGA (2.5x4) | 30V | 2.1W Ta | N-Channel | 1520pF @ 15V | 8.5mOhm @ 11A, 10V | 3V @ 250μA | 11A Ta | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC16N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc16n80p-datasheets-4300.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 32ns | 29 ns | 75 ns | 9A | 30V | SILICON | ISOLATED | SWITCHING | 150W Tc | 9A | 48A | 0.65Ohm | 1500 mJ | 800V | N-Channel | 4600pF @ 25V | 650m Ω @ 8A, 10V | 5V @ 4mA | 9A Tc | 71nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFH20N60Q | IXYS | $16.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixft20n60q-datasheets-7472.pdf | TO-247-3 | Lead Free | 3 | 350mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 20ns | 20 ns | 45 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 80A | 600V | N-Channel | 3300pF @ 25V | 350m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| FDMB668P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/onsemiconductor-fdmb668p-datasheets-4246.pdf | 8-PowerWDFN | 67mg | 8 | yes | No | Single | 1.9W | 1 | 7 ns | 9ns | 9 ns | 176 ns | 6.1A | 8V | 20V | 1.9W Ta | -20V | P-Channel | 2085pF @ 10V | 35m Ω @ 6.1A, 4.5V | 1V @ 250μA | 6.1A Ta | 59nC @ 10V | 1.8V 4.5V | ±8V |
