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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT31M100B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt31m100b2-datasheets-4101.pdf | 1kV | 31A | TO-247-3 Variant | Lead Free | 3 | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Pure Matte Tin (Sn) | SINGLE | 3 | 1.04kW | 1 | 39 ns | 35ns | 33 ns | 130 ns | 32A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1040W Tc | N-Channel | 8500pF @ 25V | 380m Ω @ 16A, 10V | 5V @ 2.5mA | 32A Tc | 260nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT31N60BCSG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt31n60bcsg-datasheets-4080.pdf | 600V | 31A | TO-247-3 | Lead Free | 3 | yes | AVALANCHE ENERGY RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 31A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 255W Tc | TO-247AD | 93A | 0.1Ohm | 800 mJ | N-Channel | 3055pF @ 25V | 100m Ω @ 18A, 10V | 3.9V @ 1.2mA | 31A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APT50M80B2VRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | 500V | 58A | TO-247-3 Variant | Lead Free | 3 | 3 | yes | FAST SWITCHING, AVALANCHE RATED, HIGH VOLTAGE | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 625W | 1 | 14 ns | 25ns | 23 ns | 64 ns | 58A | 30V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 0.08Ohm | N-Channel | 8797pF @ 25V | 80m Ω @ 29A, 10V | 4V @ 2.5mA | 58A Tc | 423nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||
| APT5518BFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5518bfllg-datasheets-4081.pdf | 550V | 31A | TO-247-3 | Lead Free | 3 | yes | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 31A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 403W Tc | TO-247AD | 124A | 0.18Ohm | 1300 mJ | N-Channel | 3286pF @ 25V | 180m Ω @ 15.5A, 10V | 5V @ 1mA | 31A Tc | 67nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT20M22B2VFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m22b2vfrg-datasheets-4082.pdf | 200V | 75A | TO-247-3 Variant | Lead Free | 3 | 3 | EAR99 | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 520W | 1 | 16 ns | 25ns | 5 ns | 48 ns | 100A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | 400A | 0.022Ohm | 2500 mJ | N-Channel | 10200pF @ 25V | 22m Ω @ 500mA, 10V | 4V @ 2.5mA | 100A Tc | 435nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| NTMFS4701NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4701nt3g-datasheets-4021.pdf | 30V | 12.3A | 8-PowerTDFN, 5 Leads | Lead Free | 5 | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | 260 | 8 | Single | 40 | 2.3W | 1 | Not Qualified | R-PDSO-F5 | 4ns | 19 ns | 29 ns | 12.3A | 20V | SILICON | DRAIN | SWITCHING | 900mW Ta | 7.7A | 0.008Ohm | 30V | N-Channel | 1280pF @ 24V | 8m Ω @ 20A, 10V | 3V @ 250μA | 7.7A Ta | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| APT26F120L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt26f120b2-datasheets-1331.pdf | 1.2kV | 26A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 22 Weeks | 10.6g | yes | EAR99 | FAST SWITCHING, AVALANCHE RATED | No | Pure Matte Tin (Sn) | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 50 ns | 31ns | 48 ns | 170 ns | 27A | 30V | SILICON | Single | DRAIN | SWITCHING | 1200V | 1135W Tc | 22A | 0.65Ohm | 1.2kV | N-Channel | 9670pF @ 25V | 650m Ω @ 14A, 10V | 5V @ 2.5mA | 27A Tc | 300nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| APT34F60BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt34f60bg-datasheets-4088.pdf | 600V | 34A | TO-247-3 | Lead Free | TO-247-3 | 6.64nF | 34A | 600V | 624W Tc | N-Channel | 6640pF @ 25V | 210mOhm @ 17A, 10V | 5V @ 1mA | 34A Tc | 165nC @ 10V | 210 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT4M120K | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1.2kV | 4A | TO-220-3 | 10.26mm | 9.19mm | 4.72mm | Lead Free | 3 | 17 Weeks | 6.000006g | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Pure Matte Tin (Sn) | SINGLE | 3 | 225W | 1 | R-PSFM-T3 | 7.4 ns | 4.4ns | 6.9 ns | 24 ns | 5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 225W Tc | TO-220AB | 5A | 3.8Ohm | 1.2kV | N-Channel | 1385pF @ 25V | 4 Ω @ 2A, 10V | 5V @ 1mA | 5A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| APT55M65JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt55m65jfll-datasheets-4068.pdf | 550V | 63A | SOT-227-4, miniBLOC | Lead Free | 4 | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 63A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 595W Tc | 252A | 0.065Ohm | 3200 mJ | N-Channel | 9165pF @ 25V | 65m Ω @ 31.5A, 10V | 5V @ 5mA | 63A Tc | 205nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| NTR4503NT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/onsemiconductor-ntr4503nt1g-datasheets-9070.pdf | 30V | 2A | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | OBSOLETE (Last Updated: 3 days ago) | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | YES | DUAL | GULL WING | 240 | 3 | Single | 30 | 730mW | 1 | FET General Purpose Power | Not Qualified | 6.7ns | 6.7 ns | 13.6 ns | 1.5A | 20V | SILICON | SWITCHING | 420mW Ta | 0.11Ohm | 25 pF | 30V | N-Channel | 250pF @ 24V | 110m Ω @ 2.5A, 10V | 3V @ 250μA | 1.5A Ta | 7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| APT5F100K | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5f100k-datasheets-4072.pdf | 1kV | 5A | TO-220-3 | Lead Free | 3 | yes | FAST SWITCHING, AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 225W | 1 | FET General Purpose Power | R-PSFM-T3 | 23 ns | 21ns | 21 ns | 72 ns | 5A | 30V | SILICON | Single | DRAIN | SWITCHING | 1000V | 225W Tc | TO-220AB | 32A | 20A | 2.9Ohm | N-Channel | 1409pF @ 25V | 2.8 Ω @ 3A, 10V | 5V @ 500μA | 5A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| APT5020SVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | 500V | 26A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 3 | yes | No | e3 | PURE MATTE TIN | 300W | SINGLE | GULL WING | 245 | 3 | 30 | 300W | 1 | R-PSSO-G2 | 12 ns | 10ns | 8 ns | 50 ns | 26A | 30V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 0.2Ohm | N-Channel | 4440pF @ 25V | 200m Ω @ 500mA, 10V | 4V @ 1mA | 26A Tc | 225nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||
| APT4F120K | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt4f120k-datasheets-4075.pdf | 1.2kV | 4A | TO-220-3 | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 225W | 1 | TO-220 | 1.385nF | 7.4 ns | 4.4ns | 6.9 ns | 24 ns | 4A | 30V | 1200V | 225W Tc | N-Channel | 1385pF @ 25V | 4.6Ohm @ 2A, 10V | 5V @ 500μA | 4A Tc | 43nC @ 10V | 4.6 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| APT30M85BVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 300V | 40A | TO-247-3 | Lead Free | 3 | yes | EAR99 | FREDFET | No | e1 | TIN SILVER COPPER | SINGLE | 300W | 1 | R-PSFM-T3 | 12 ns | 10ns | 7 ns | 43 ns | 40A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 0.085Ohm | N-Channel | 4950pF @ 25V | 85m Ω @ 500mA, 10V | 4V @ 1mA | 40A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APT15F60B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt15f60b-datasheets-4054.pdf | 600V | 15A | TO-247-3 | Lead Free | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 290W | 1 | R-PSFM-T3 | 16 ns | 19ns | 15 ns | 49 ns | 16A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 290W Tc | 54A | 0.43Ohm | 405 mJ | N-Channel | 2882pF @ 25V | 430m Ω @ 7A, 10V | 5V @ 500μA | 16A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| APT40M70LVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | 400V | 57A | TO-264-3, TO-264AA | Lead Free | 3 | yes | FAST SWITCHING, AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 520W | 1 | R-PSIP-T3 | 16 ns | 16ns | 5 ns | 55 ns | 57A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 520W Tc | 228A | 0.07Ohm | 2500 mJ | N-Channel | 8890pF @ 25V | 70m Ω @ 500mA, 10V | 4V @ 2.5mA | 57A Tc | 495nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APT30M40B2VFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | 300V | 76A | TO-247-3 Variant | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 520W | 1 | 16 ns | 20ns | 4 ns | 48 ns | 76A | 30V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 0.04Ohm | 2500 mJ | N-Channel | 10200pF @ 25V | 40m Ω @ 500mA, 10V | 4V @ 2.5mA | 76A Tc | 425nC @ 10V | |||||||||||||||||||||||||||||||||||||
| APT20N60SC3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20n60bc3g-datasheets-4051.pdf | 600V | 20.7A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | yes | unknown | 3 | 20.7A | 208W Tc | N-Channel | 2440pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 20.7A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT40M70JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt40m70jvfr-datasheets-4058.pdf | 400V | 53A | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 450W | 1 | FET General Purpose Power | 16 ns | 16ns | 5 ns | 54 ns | 53A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 450W Tc | 0.07Ohm | 2500 mJ | N-Channel | 8890pF @ 25V | 70m Ω @ 26.5A, 10V | 4V @ 2.5mA | 53A Tc | 495nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| APT30M85SVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 300V | 40A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 40A | N-Channel | 4950pF @ 25V | 85m Ω @ 500mA, 10V | 40A Tc | 195nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT15F50K | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt15f50k-datasheets-4060.pdf | 500V | 15A | TO-220-3 | Lead Free | 3 | Unknown | 3 | yes | EAR99 | FAST SWITCHING, AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 223W | 1 | FET General Purpose Power | 10 ns | 12ns | 8 ns | 26 ns | 15mA | 30V | SILICON | Single | SWITCHING | 4V | 223W Tc | TO-220AB | 45A | N-Channel | 2250pF @ 25V | 4 V | 390m Ω @ 7A, 10V | 5V @ 500μA | 15A Tc | 55nC @ 10V | |||||||||||||||||||||||||||||||||
| APT20M22B2VRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 200V | 75A | TO-247-3 Variant | Lead Free | 3 | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 520W | 1 | 16 ns | 25ns | 5 ns | 48 ns | 100A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | 400A | 0.022Ohm | 2500 mJ | N-Channel | 10200pF @ 25V | 22m Ω @ 500mA, 10V | 4V @ 2.5mA | 100A Tc | 435nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| APT31N80JC3 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt31n80jc3-datasheets-4065.pdf | 800V | 31A | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | UL RECOGNIZED, AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 833W | 1 | FET General Purpose Power | 25 ns | 15ns | 6 ns | 70 ns | 31A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 833W Tc | 93A | 670 mJ | N-Channel | 4510pF @ 25V | 145m Ω @ 22A, 10V | 3.9V @ 2mA | 31A Tc | 355nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| APT50M65B2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m65lllg-datasheets-0960.pdf | 500V | 67A | TO-247-3 Variant | Lead Free | 3 | 3 | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 694W | 1 | 12 ns | 28ns | 30 ns | 29 ns | 67A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 694W Tc | 268A | 0.065Ohm | N-Channel | 7010pF @ 25V | 65m Ω @ 33.5A, 10V | 5V @ 2.5mA | 67A Tc | 141nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APT20M19JVR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m19jvr-datasheets-4048.pdf | 200V | 112A | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | EAR99 | FAST SWITCHING, UL RECOGNIZED | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 112A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500W Tc | N-Channel | 11640pF @ 25V | 19m Ω @ 500mA, 10V | 4V @ 1mA | 112A Tc | 495nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APT20M38SVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 200V | 67A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 22 Weeks | 3 | yes | EAR99 | AVALANCHE ENERGY RATED | No | Pure Matte Tin (Sn) | SINGLE | GULL WING | 245 | 3 | 30 | 370W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 21ns | 10 ns | 18 ns | 67A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 370W Tc | 268A | N-Channel | 6120pF @ 25V | 38m Ω @ 500mA, 10V | 4V @ 1mA | 67A Tc | 225nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| APT20N60BC3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20n60bc3g-datasheets-4051.pdf | 600V | 20.7A | TO-247-3 | Lead Free | 3 | yes | AVALANCHE ENERGY RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 20.7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 208W Tc | TO-247AD | 62A | 0.19Ohm | 690 mJ | N-Channel | 2440pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 20.7A Tc | 114nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| APT1003RKLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/microsemi-apt1003rkllg-datasheets-5461.pdf | 1kV | 4A | TO-220-3 | Lead Free | 3 | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 139W | 1 | 8 ns | 4ns | 10 ns | 25 ns | 4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 139W Tc | TO-220AB | 4A | 3Ohm | 425 mJ | N-Channel | 694pF @ 25V | 3 Ω @ 2A, 10V | 5V @ 1mA | 4A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| APT10045B2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 1kV | 23A | TO-247-3 Variant | Lead Free | 3 | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 565W | 1 | FET General Purpose Power | 10 ns | 5ns | 8 ns | 30 ns | 23A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 565W Tc | 92A | 0.45Ohm | 2500 mJ | N-Channel | 4350pF @ 25V | 450m Ω @ 11.5A, 10V | 5V @ 2.5mA | 23A Tc | 154nC @ 10V | 10V | ±30V |
