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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQA6N90_F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqa6n90f109-datasheets-4272.pdf | TO-3P-3, SC-65-3 | TO-3P | 900V | 198W Tc | N-Channel | 1880pF @ 25V | 1.9Ohm @ 3A, 10V | 5V @ 250μA | 6.4A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDZ291P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdz291p-datasheets-4179.pdf | 9-VFBGA | 9-BGA (1.5x1.6) | 20V | 1.7W Ta | P-Channel | 1010pF @ 10V | 40mOhm @ 4.6A, 4.5V | 1V @ 250μA | 4.6A Ta | 13nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMS4706NR2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntms4706nr2g-datasheets-3936.pdf | 30V | 8.6A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 8 | 30 | 1.5W | 1 | Not Qualified | 4ns | 4 ns | 24 ns | 6.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 830mW Ta | 0.012Ohm | 30V | N-Channel | 950pF @ 24V | 12m Ω @ 10.3A, 10V | 2.5V @ 250μA | 6.4A Ta | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| APT8014JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8014jll-datasheets-4228.pdf | 800V | 42A | SOT-227-4, miniBLOC | Lead Free | 4 | 6 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 20 ns | 19ns | 15 ns | 69 ns | 42A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 595W Tc | 3200 mJ | N-Channel | 7238pF @ 25V | 140m Ω @ 21A, 10V | 5V @ 5mA | 42A Tc | 285nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FDD6N20TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdd6n20tf-datasheets-4229.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 200V | 40W Tc | N-Channel | 230pF @ 25V | 800mOhm @ 2.3A, 10V | 5V @ 250μA | 4.5A Tc | 6.1nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDA2712 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fda2712-datasheets-4230.pdf | TO-3P-3, SC-65-3 | TO-3PN | 250V | 357W Tc | N-Channel | 10175pF @ 25V | 34mOhm @ 40A, 10V | 5V @ 250μA | 64A Tc | 129nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF7N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdpf7n50-datasheets-4231.pdf | TO-220-3 Full Pack | 3 | 2.27g | 3 | EAR99 | e3 | MATTE TIN | NOT SPECIFIED | Single | NOT SPECIFIED | 31.3W | 1 | FET General Purpose Power | 6 ns | 55ns | 35 ns | 25 ns | 7A | 30V | SILICON | ISOLATED | SWITCHING | 39W Tc | TO-220AB | 5A | 20A | 500V | N-Channel | 940pF @ 25V | 900m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 16.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTD50N03RT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | /files/onsemiconductor-ntd50n03r001-datasheets-3743.pdf | 25V | 45A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 4 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | 4 | Single | 50W | 84ns | 6.8 ns | 15 ns | 45A | 20V | 1.5W Ta 50W Tc | 25V | N-Channel | 750pF @ 12V | 12m Ω @ 30A, 11.5V | 2V @ 250μA | 7.8A Ta 45A Tc | 15nC @ 11.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPC3703C | IXYS Integrated Circuits Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~125°C TJ | Tube | 1 (Unlimited) | 125°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixysintegratedcircuitsdivision-cpc3703c-datasheets-4235.pdf | TO-243AA | Lead Free | 130.492855mg | 4 | 1 | 1.1W | 1 | SOT-89-3 | 350pF | 360mA | 20V | 250V | 1.6W Ta | 4Ohm | N-Channel | 350pF @ 25V | 4Ohm @ 200mA, 0V | 360mA Ta | Depletion Mode | 4 Ω | 0V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL540NSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | 100V | 36A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3.8W | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | 81ns | 36A | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 120A | N-Channel | 1800pF @ 25V | 44m Ω @ 18A, 10V | 2V @ 250μA | 36A Tc | 74nC @ 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFC2P100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdfc2p100-datasheets-4244.pdf | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 6 | 1.5W | 1mA | 11ns | 11 ns | 12 ns | 3A | 12V | 20V | -900mV | 1.5W Ta | -20V | P-Channel | 445pF @ 10V | 150m Ω @ 3A, 4.5V | 1.5V @ 250μA | 3A Ta | 4.7nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMB668P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/onsemiconductor-fdmb668p-datasheets-4246.pdf | 8-PowerWDFN | 67mg | 8 | yes | No | Single | 1.9W | 1 | 7 ns | 9ns | 9 ns | 176 ns | 6.1A | 8V | 20V | 1.9W Ta | -20V | P-Channel | 2085pF @ 10V | 35m Ω @ 6.1A, 4.5V | 1V @ 250μA | 6.1A Ta | 59nC @ 10V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTN320N10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtn320n10t-datasheets-4250.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 320A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 680W Tc | 700A | 0.0032Ohm | 2300 mJ | N-Channel | 4.5V @ 1mA | 320A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP149L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp149h6327xtsa1-datasheets-3532.pdf | TO-261-4, TO-261AA | 4 | 4 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 4 | 1.8W | 1 | 5.1 ns | 3.4ns | 21 ns | 45 ns | 660mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 1.8W Ta | 0.66A | 2.6A | N-Channel | 430pF @ 25V | 1.8 Ω @ 660mA, 10V | 1V @ 400μA | 660mA Ta | 14nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFC110N10P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc110n10p-datasheets-4257.pdf | ISOPLUS220™ | 3 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 120W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 25ns | 25 ns | 65 ns | 60A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 120W Tc | 250A | 0.017Ohm | 1000 mJ | 100V | N-Channel | 3550pF @ 25V | 17m Ω @ 55A, 10V | 5V @ 4mA | 60A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| HCT7000MTXV | TT Electronics/Optek Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/ttelectronicsoptektechnology-hct7000m-datasheets-0943.pdf | 3-SMD, No Lead | 3.175mm | 1.3716mm | 2.667mm | 3 | Single | 300mW | 3-SMD | 60pF | 10 ns | 10 ns | 200mA | 40V | 60V | 300mW Ta | 5Ohm | N-Channel | 60pF @ 25V | 5Ohm @ 500mA, 10V | 3V @ 1mA | 200mA Ta | 5 Ω | 10V | ±40V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF10N60CF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-fqpf10n60cf-datasheets-4210.pdf | TO-220-3 Full Pack | 3 | EAR99 | compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 50W Tc | TO-220AB | 9.5A | 38A | 0.73Ohm | 700 mJ | N-Channel | 2040pF @ 25V | 800m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 57nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDZ201N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdz201n-datasheets-4214.pdf | 12-WFBGA | 12-BGA (2x2.5) | 20V | 2W Ta | N-Channel | 1127pF @ 10V | 18mOhm @ 9A, 4.5V | 1.5V @ 250μA | 9A Ta | 15nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN150N15 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn150n15-datasheets-4162.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.07mm | Lead Free | 4 | 44g | No SVHC | 12.5mOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PUFM-X4 | 2.5kV | 50 ns | 60ns | 45 ns | 110 ns | 150A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600W Tc | 600A | 150V | N-Channel | 9100pF @ 25V | 4 V | 12.5m Ω @ 75A, 10V | 4V @ 8mA | 150A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| APT8M80K | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8m80k-datasheets-4167.pdf | 800V | 8A | TO-220-3 | 10.26mm | 9.19mm | 4.72mm | Lead Free | 3 | 6.000006g | yes | FAST SWITCHING, AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 225W | 1 | FET General Purpose Power | R-PSFM-T3 | 8 ns | 11ns | 10 ns | 33 ns | 8A | 30V | SILICON | Single | DRAIN | SWITCHING | 225W Tc | TO-220AB | 45A | 25A | 285 mJ | 800V | N-Channel | 1335pF @ 25V | 1.35 Ω @ 4A, 10V | 5V @ 500μA | 8A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APT8024JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8024jll-datasheets-4170.pdf | 800V | 29A | SOT-227-4, miniBLOC | Lead Free | 4 | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 460W | 1 | FET General Purpose Power | 9 ns | 5ns | 4 ns | 23 ns | 29A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 460W Tc | 2500 mJ | N-Channel | 4670pF @ 25V | 240m Ω @ 14.5A, 10V | 5V @ 2.5mA | 29A Tc | 160nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| BSP318SL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/infineontechnologies-bsp318sh6327xtsa1-datasheets-3145.pdf | TO-261-4, TO-261AA | 4 | 4 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | DUAL | GULL WING | 1.8W | 1 | 12 ns | 15ns | 15 ns | 20 ns | 2.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 1.8W Ta | 60 mJ | N-Channel | 380pF @ 25V | 90m Ω @ 2.6A, 10V | 2V @ 20μA | 2.6A Ta | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB9N50CFTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqb9n50cftmws-datasheets-2239.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 500V | 173W Tc | N-Channel | 1030pF @ 25V | 850mOhm @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R385CPBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipd60r385cpatma1-datasheets-0922.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | yes | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 4 | 40 | 83W | 1 | Not Qualified | R-PSSO-G2 | 10 ns | 5ns | 40 ns | 9A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 83W Tc | TO-252AA | 9A | 27A | 0.385Ohm | 227 mJ | N-Channel | 790pF @ 100V | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 9A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDFMA2P857 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdfma2p857-datasheets-4190.pdf | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | No SVHC | 6 | EAR99 | Single | 1.4W | 1 | Other Transistors | 9 ns | 11ns | 11 ns | 15 ns | -3A | 8V | 20V | -700mV | 1.4W Ta | 3A | -20V | P-Channel | 435pF @ 10V | 120m Ω @ 3A, 4.5V | 1.3V @ 250μA | 3A Ta | 6nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDA15N65 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fda15n65-datasheets-4193.pdf | TO-3P-3, SC-65-3 | Lead Free | 6.401g | 3 | yes | Single | 260W | 1 | 125ns | 65 ns | 105 ns | 16A | 30V | 260W Tc | 650V | N-Channel | 3095pF @ 25V | 440m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 63nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT12F60K | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt12f60k-datasheets-4195.pdf | 600V | 12A | TO-220-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | No | Pure Matte Tin (Sn) | SINGLE | 3 | 255W | 1 | R-PSFM-T3 | 12 ns | 14ns | 11 ns | 37 ns | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 225W Tc | TO-220AB | 0.62Ohm | 305 mJ | N-Channel | 2200pF @ 25V | 620m Ω @ 6A, 10V | 5V @ 500μA | 12A Tc | 55nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76609D3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-hufa76609d3s-datasheets-2683.pdf | 100V | 10A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | Single | 49W | 1 | 18ns | 39 ns | 55 ns | 10A | 16V | 49W Tc | 100V | N-Channel | 425pF @ 25V | 160m Ω @ 10A, 10V | 3V @ 250μA | 10A Tc | 16nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDR858P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 1999 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdr858p-datasheets-4202.pdf | 8-LSOP (0.130, 3.30mm Width) | SuperSOT™-8 | 30V | 1.8W Ta | P-Channel | 2010pF @ 15V | 19mOhm @ 8A, 10V | 3V @ 250μA | 8A Ta | 30nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF7N50U | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdpf7n50u-datasheets-4204.pdf | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 2.27g | 3 | yes | Single | 31.3W | 1 | 6 ns | 55ns | 35 ns | 25 ns | 5A | 30V | 39W Tc | 500V | N-Channel | 940pF @ 25V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5A Tc | 16.6nC @ 10V | 10V | ±30V |
