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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TPCA8A04-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 45W | FET General Purpose Power | 4.9ns | 8.3 ns | 44A | 20V | Single | 30V | N-Channel | 5700pF @ 10V | 3.2m Ω @ 22A, 10V | 2.3V @ 1mA | 44A Ta | 59nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCP8005-H(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 8 | EAR99 | No | 1.68W | FET General Purpose Power | 3ns | 4 ns | 11A | 20V | Single | 840mW Ta | 30V | N-Channel | 2150pF @ 10V | 12.9m Ω @ 5.5A, 10V | 2.5V @ 1mA | 11A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3462(TE16L1,NQ) | Toshiba Semiconductor and Storage | $3.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3462te16l1nq-datasheets-3690.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | PW-MOLD | 267pF | 3A | 250V | 20W Tc | N-Channel | 267pF @ 10V | 1.7Ohm @ 1.5A, 10V | 3.5V @ 1mA | 3A Ta | 12nC @ 10V | 1.7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3031LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn3031lss13-datasheets-3425.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 8 | 506.605978mg | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 40 | 1 | FET General Purpose Power | 4 ns | 4.4ns | 9.4 ns | 23 ns | 9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 9A | 40A | N-Channel | 741pF @ 15V | 18.5m Ω @ 9A, 10V | 2.1V @ 250μA | 9A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SFW9Z34TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sfw9z34tm-datasheets-3703.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 60V | 3.8W Ta 82W Tc | P-Channel | 1155pF @ 25V | 140mOhm @ 9A, 10V | 4V @ 250μA | 18A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4017(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-251-3 Stub Leads, IPak | 6.5mm | 5.5mm | 2.3mm | Lead Free | 52 Weeks | No SVHC | 3 | Silver, Tin | No | Single | 20W | 1 | 10ns | 4 ns | 5A | 20V | 60V | 2.5V | 20W Tc | N-Channel | 730pF @ 10V | 2.5 V | 100m Ω @ 2.5A, 10V | 2.5V @ 1mA | 5A Ta | 15nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| 2SK3868(Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3868qm-datasheets-3710.pdf | TO-220-3 Full Pack | 5A | 500V | 35W Tc | N-Channel | 550pF @ 25V | 1.7 Ω @ 2.5A, 10V | 4V @ 1mA | 5A Ta | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFW9530TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sfw9530tm-datasheets-3712.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 100V | 3.8W Ta 66W Tc | P-Channel | 1035pF @ 25V | 300mOhm @ 5.3A, 10V | 4V @ 250μA | 10.5A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8035-H(TE12L,QM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 1.9W | 8-SOP (5.5x6.0) | 7.8nF | 5.1ns | 11 ns | 18A | 20V | 30V | 1W Ta | 3.2mOhm | 30V | N-Channel | 7800pF @ 10V | 3.2mOhm @ 9A, 10V | 2.3V @ 1mA | 18A Ta | 82nC @ 10V | 3.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-2n7002l6327htsa1-datasheets-3719.pdf | TO-236-3, SC-59, SOT-23-3 | 60V | 500mW Ta | N-Channel | 20pF @ 25V | 3 Ω @ 500mA, 10V | 2.5V @ 250μA | 300mA Ta | 0.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RDN100N20FU6 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rdn100n20-datasheets-9685.pdf | TO-220-3 Full Pack | 3 | 10A | 200V | 35W Tc | N-Channel | 543pF @ 10V | 360m Ω @ 5A, 10V | 4V @ 1mA | 10A Ta | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD5N53TM_WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdd5n53tmws-datasheets-1914.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 260.37mg | 3 | Single | 40W | 1 | 22ns | 20 ns | 28 ns | 4A | 30V | 40W Tc | 530V | N-Channel | 640pF @ 25V | 1.5 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD5805NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/onsemiconductor-ntd5805nt4g-datasheets-3672.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | No SVHC | 4 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | 4 | Single | 47W | 1 | 10.2 ns | 17.9ns | 4.5 ns | 22.9 ns | 51A | 20V | 1.5V | 47W Tc | 40V | N-Channel | 1725pF @ 25V | 9.5m Ω @ 15A, 10V | 3.5V @ 250μA | 51A Tc | 80nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3466(TE24L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3466te24lq-datasheets-3727.pdf | SC-97 | 5A | 500V | 50W Tc | N-Channel | 780pF @ 10V | 1.5 Ω @ 5A, 10V | 4V @ 1mA | 5A Ta | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8051-H(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 3.4ns | 6.7 ns | 13A | 20V | 80V | 1W Ta | N-Channel | 7540pF @ 10V | 9.7m Ω @ 6.5A, 10V | 2.3V @ 1mA | 13A Ta | 85nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSF045N03MQ3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsf045n03mq3g-datasheets-3729.pdf | 3-WDSON | 2 | yes | EAR99 | compliant | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 28W | 30V | 30V | 18A | 252A | 0.0059Ohm | 30 mJ | N-Channel | 2600pF @ 15V | 4.5m Ω @ 20A, 10V | 2.2V @ 250μA | 18A Ta 63A Tc | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTD5804NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/onsemiconductor-ntd5804nt4g-datasheets-3677.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 4 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 71W | 1 | FET General Purpose Power | R-PSSO-G2 | 11.8 ns | 18.7ns | 5.9 ns | 26.8 ns | 69A | 20V | SILICON | DRAIN | SWITCHING | 2V | 71W Tc | 0.0085Ohm | 40V | N-Channel | 2850pF @ 25V | 8.5m Ω @ 30A, 10V | 3.5V @ 250μA | 69A Tc | 45nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| 2SK2866(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2866f-datasheets-3643.pdf | TO-220-3 | Lead Free | 3 | No | Single | 125W | 1 | 22ns | 36 ns | 10A | 30V | 125W Tc | 600V | N-Channel | 2040pF @ 10V | 750m Ω @ 5A, 10V | 4V @ 1mA | 10A Ta | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3906(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3906q-datasheets-3645.pdf | TO-3P-3, SC-65-3 | 15.9mm | 19mm | 4.8mm | Lead Free | Unknown | 3 | No | Single | 150W | 1 | 12ns | 10 ns | 20A | 30V | 600V | 4V | 150W Tc | 600V | N-Channel | 4250pF @ 25V | 4 V | 330m Ω @ 10A, 10V | 4V @ 1mA | 20A Ta | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2544(F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2544f-datasheets-3648.pdf | TO-220-3 | Lead Free | No | Single | 80W | 1 | TO-220AB | 1.3nF | 25ns | 40 ns | 6A | 30V | 600V | 80W Tc | 1.25Ohm | 600V | N-Channel | 1300pF @ 10V | 1.25Ohm @ 3A, 10V | 4V @ 1mA | 6A Ta | 30nC @ 10V | 1.25 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTLJS3180PZTBG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntljs3180pztag-datasheets-3386.pdf | 6-WDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | 1.9W | 1 | Not Qualified | 15ns | 15 ns | 70 ns | 3.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700mW Ta | 0.05Ohm | 20V | P-Channel | 1100pF @ 16V | 38m Ω @ 3A, 4.5V | 1V @ 250μA | 3.5A Ta | 19.5nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| TPC8026(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpc8026te12lqm-datasheets-3652.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | 1.9W | 8-SOP (5.5x6.0) | 1.8nF | 15ns | 21 ns | 13A | 20V | 30V | 1W Ta | 6.6mOhm | 30V | N-Channel | 1800pF @ 10V | 6.6mOhm @ 6.5A, 10V | 2.5V @ 1mA | 13A Ta | 42nC @ 10V | 6.6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB3860 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdb3860-datasheets-3403.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | NOT SPECIFIED | NOT SPECIFIED | 100V | 3.1W Ta 71W Tc | N-Channel | 1740pF @ 50V | 37m Ω @ 5.9A, 10V | 4.5V @ 250μA | 6.4A Ta 30A Tc | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4847NAT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4847nat1g-datasheets-3356.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 38 Weeks | 5 | LIFETIME (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | 5 | 1 | 17.7 ns | 53ns | 8.7 ns | 21 ns | 85A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 880mW Ta 48.4W Tc | 0.0062Ohm | N-Channel | 2614pF @ 12V | 4.1m Ω @ 30A, 10V | 2.5V @ 250μA | 11.5A Ta 85A Tc | 28nC @ 4.5V | 4.5V 11.5V | ±16V | |||||||||||||||||||||||||||||||||||||
| TPC8036-H(TE12L,QM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 8-SOP (5.5x6.0) | 4.6nF | 4.5ns | 7.4 ns | 18A | 20V | 30V | 1W Ta | N-Channel | 4600pF @ 10V | 4.5mOhm @ 9A, 10V | 2.3V @ 1mA | 18A Ta | 49nC @ 10V | 4.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8025(TE12L,Q,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | No | 12ns | 23 ns | 40A | 20V | 30V | 1.6W Ta 45W Tc | N-Channel | 2200pF @ 10V | 3.5m Ω @ 20A, 10V | 2.5V @ 1mA | 40A Ta | 49nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4016(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk4016q-datasheets-3662.pdf | TO-220-3 Full Pack | 10mm | 8.1mm | 4.5mm | Lead Free | 3 | No | Single | 50W | 1 | 60ns | 50 ns | 13A | 30V | 600V | 50W Tc | 600V | N-Channel | 3100pF @ 25V | 4 V | 500m Ω @ 6.5A, 10V | 4V @ 1mA | 13A Ta | 62nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3662(F) | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | Lead Free | 3 | TO-220NIS | 5.12nF | 35A | 60V | 35W Tc | N-Channel | 5120pF @ 10V | 12.5mOhm @ 18A, 10V | 2.5V @ 1mA | 35A Ta | 91nC @ 10V | 12.5 mΩ | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLC530TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | https://pdf.utmel.com/r/datasheets/onsemiconductor-lm7918ct-datasheets-7491.pdf | TO-220-3 | TO-220-3 | 330V | N-Channel | 7A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8036-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | 38A | 30V | 1.6W Ta 45W Tc | N-Channel | 4600pF @ 10V | 4.2m Ω @ 19A, 10V | 2.3V @ 500μA | 38A Ta | 50nC @ 10V | 4.5V 10V | ±20V |
