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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPB80N04S204ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s204atma1-datasheets-3954.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 300W Tc | 80A | 320A | 0.0034Ohm | 810 mJ | N-Channel | 5300pF @ 25V | 3.4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4021(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk4021q-datasheets-3958.pdf | TO-251-3 Stub Leads, IPak | 6.5mm | 5.5mm | 2.3mm | Lead Free | 3 | No | Single | 15ns | 15 ns | 4.5A | 20V | 250V | 20W Tc | N-Channel | 440pF @ 10V | 1 Ω @ 2.5A, 10V | 3.5V @ 1mA | 4.5A Ta | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S208ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s208atma1-datasheets-3961.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 215W Tc | 80A | 320A | 0.0077Ohm | 450 mJ | N-Channel | 2860pF @ 25V | 7.7m Ω @ 58A, 10V | 4V @ 150μA | 80A Tc | 96nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R250CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r250cpatma1-datasheets-3965.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 104W Tc | 12A | 40A | 0.25Ohm | 345 mJ | N-Channel | 1200pF @ 100V | 250m Ω @ 7.8A, 10V | 3.5V @ 440μA | 12A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S205ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s205atma1-datasheets-3969.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 300W Tc | 80A | 320A | 0.0048Ohm | 810 mJ | N-Channel | 5110pF @ 25V | 4.8m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPB26CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb26cne8ng-datasheets-3973.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 71W Tc | 35A | 140A | 0.026Ohm | 65 mJ | N-Channel | 2070pF @ 40V | 26m Ω @ 35A, 10V | 4V @ 39μA | 35A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S207ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n06s207atma1-datasheets-3976.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | EAR99 | Halogen Free | 37ns | 36 ns | 61 ns | 80A | 55V | 250W Tc | N-Channel | 3400pF @ 25V | 6.3m Ω @ 68A, 10V | 4V @ 180μA | 80A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD12CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp12cne8ng-datasheets-1234.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | compliant | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 125W Tc | TO-252AA | 67A | 268A | 0.0124Ohm | 154 mJ | N-Channel | 4340pF @ 40V | 12.4m Ω @ 67A, 10V | 4V @ 83μA | 67A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD105N04LGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ipd105n04lgbtma1-datasheets-3984.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 1 | Not Qualified | R-PSSO-G2 | 40A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 42W Tc | TO-252AA | 280A | 0.0105Ohm | 10 mJ | N-Channel | 1900pF @ 20V | 10.5m Ω @ 40A, 10V | 2V @ 14μA | 40A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FQP32N20C_F080 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqp32n20c-datasheets-5296.pdf | TO-220-3 | TO-220-3 | 200V | 156W Tc | N-Channel | 2200pF @ 25V | 82mOhm @ 14A, 10V | 4V @ 250μA | 28A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA100N08N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa100n08n3gxksa1-datasheets-3922.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 35W | 1 | Not Qualified | 13 ns | 30ns | 5 ns | 23 ns | 40A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 35W Tc | TO-220AB | N-Channel | 2410pF @ 40V | 10m Ω @ 40A, 10V | 3.5V @ 46μA | 40A Tc | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPB80N04S2L03ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-ipb80n04s2l03atma1-datasheets-3928.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | Halogen Free | YES | GULL WING | Single | 300W | 1 | R-PSSO-G2 | 19 ns | 50ns | 27 ns | 77 ns | 80A | 20V | 40V | SILICON | DRAIN | 300W Tc | 810 mJ | 40V | N-Channel | 6000pF @ 25V | 3.1m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 213nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSS670S2LL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss670s2l-datasheets-5616.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 360mW | 1 | SOT-23-3 | 75pF | 540mA | 20V | 55V | 360mW Ta | N-Channel | 75pF @ 25V | 650mOhm @ 270mA, 10V | 2V @ 2.7μA | 540mA Ta | 2.26nC @ 10V | 650 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSR315PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-bsr315pl6327htsa1-datasheets-3874.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | 8541.21.00.95 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 28ns | 620mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 500mW Ta | 0.62A | 0.8Ohm | P-Channel | 176pF @ 25V | 800m Ω @ 620mA, 10V | 2V @ 160μA | 620mA Ta | 6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB12CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp12cn10ng-datasheets-1275.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | FAST SWITCHING | compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 125W Tc | 67A | 268A | 0.0126Ohm | 154 mJ | N-Channel | 4320pF @ 50V | 12.6m Ω @ 67A, 10V | 4V @ 83μA | 67A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPA60R600CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r600cpxksa1-datasheets-3882.pdf | TO-220-3 Full Pack | 3 | yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 28W Tc | TO-220AB | 6.1A | 15A | 0.6Ohm | 144 mJ | N-Channel | 550pF @ 100V | 600m Ω @ 3.3A, 10V | 3.5V @ 220μA | 6.1A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPB16CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb16cn10ng-datasheets-3887.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 100W Tc | 53A | 212A | 0.0165Ohm | 107 mJ | N-Channel | 3220pF @ 50V | 16.5m Ω @ 53A, 10V | 4V @ 61μA | 53A Tc | 48nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSS138W L6433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss138we6327-datasheets-2396.pdf | SC-70, SOT-323 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 500mW Ta | 0.28A | 4.2 pF | N-Channel | 43pF @ 25V | 3.5 Ω @ 220mA, 10V | 1.4V @ 26μA | 280mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPB114N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb114n03lg-datasheets-3894.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 38W Tc | 30A | 210A | 0.0114Ohm | 30 mJ | N-Channel | 1500pF @ 15V | 11.4m Ω @ 30A, 10V | 2.2V @ 250μA | 30A Tc | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPB08CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp08cne8ng-datasheets-1165.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 167W Tc | 95A | 380A | 0.0082Ohm | 262 mJ | N-Channel | 6690pF @ 40V | 8.2m Ω @ 95A, 10V | 4V @ 130μA | 95A Tc | 99nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPB160N04S203ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb160n04s203atma4-datasheets-6819.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | EAR99 | ULTRA-LOW RESISTANCE | AEC-Q101 | YES | SINGLE | GULL WING | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 300W Tc | 160A | 640A | 0.0029Ohm | 810 mJ | N-Channel | 5300pF @ 25V | 2.9m Ω @ 60A, 10V | 4V @ 250μA | 160A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDU8796_F071 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdd8796-datasheets-2729.pdf | TO-251-3 Short Leads, IPak, TO-251AA | compliant | NOT SPECIFIED | NOT SPECIFIED | 25V | 88W Tc | N-Channel | 2610pF @ 13V | 5.7m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 52nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSR92PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsr92pl6327htsa1-datasheets-3907.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | Tin | PG-SC-59 | 109pF | 6.3ns | 140mA | 20V | 250V | 500mW Ta | 8Ohm | P-Channel | 109pF @ 25V | 11Ohm @ 140mA, 10V | 1V @ 130μA | 140mA Ta | 4.8nC @ 10V | 11 Ω | 2.8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS316NL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss316nl6327htsa1-datasheets-3914.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 94pF | 1.4A | 30V | 500mW Ta | N-Channel | 94pF @ 15V | 160mOhm @ 1.4A, 10V | 2V @ 3.7μA | 1.4A Ta | 0.6nC @ 5V | 160 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSH70N10A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ssh70n10a-datasheets-3918.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | No | 70A | 100V | Single | 300W | 1 | 24ns | 84 ns | 112 ns | 70A | 20V | 300W Tc | 100V | N-Channel | 4870pF @ 25V | 4 V | 23m Ω @ 35A, 10V | 4V @ 250μA | 70A Tc | 195nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS139L6906HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 76pF | 100mA | 250V | 360mW Ta | N-Channel | 76pF @ 25V | 14Ohm @ 0.1mA, 10V | 1V @ 56μA | 100mA Ta | 3.5nC @ 5V | Depletion Mode | 14 Ω | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB26CN10NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb26cn10ngatma1-datasheets-3866.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 1 | Not Qualified | R-PSSO-G2 | 35A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 71W Tc | 140A | 0.026Ohm | 65 mJ | N-Channel | 2070pF @ 50V | 26m Ω @ 35A, 10V | 4V @ 39μA | 35A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FQD5N50CTM_F080 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqd5n50ctf-datasheets-2706.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 500V | 2.5W Ta 48W Tc | N-Channel | 625pF @ 25V | 1.4Ohm @ 2A, 10V | 4V @ 250μA | 4A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFP9540 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sfp9540-datasheets-3872.pdf | TO-220-3 | Lead Free | No SVHC | 3 | Single | 132W | 1 | 22ns | 26 ns | 45 ns | 17A | 30V | -100V | 100V | 132W Tc | -100V | P-Channel | 1535pF @ 25V | -4 V | 200m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS126L6906HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss126e6906-datasheets-7116.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 28pF | 21mA | 600V | 500mW Ta | N-Channel | 28pF @ 25V | 500Ohm @ 16mA, 10V | 1.6V @ 8μA | 21mA Ta | 2.1nC @ 5V | Depletion Mode | 500 Ω | 0V 10V | ±20V |
