Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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BSS84PW L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss84pw-datasheets-2449.pdf | SC-70, SOT-323 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 300mW Ta | 0.15A | 8Ohm | 3.8 pF | P-Channel | 19.1pF @ 25V | 8 Ω @ 150mA, 10V | 2V @ 20μA | 150mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IPA50R399CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa50r399cpxksa1-datasheets-3819.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 83W Tc | TO-220AB | 9A | 20A | 0.399Ohm | 215 mJ | N-Channel | 890pF @ 100V | 399m Ω @ 4.9A, 10V | 3.5V @ 330μA | 9A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IPB100N04S204ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb100n04s204atma1-datasheets-3827.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 300W Tc | 100A | 400A | 0.0033Ohm | 810 mJ | N-Channel | 5300pF @ 25V | 3.3m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 172nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S2L03ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb100n04s2l03atma1-datasheets-3831.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 300W Tc | 100A | 400A | 0.003Ohm | 810 mJ | N-Channel | 6000pF @ 25V | 3m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 230nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
BSS84PL6433HTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss84pe6327-datasheets-5060.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 360mW | 1 | SOT-23-3 | 19pF | 170mA | 20V | 60V | 360mW Ta | P-Channel | 19pF @ 25V | 8Ohm @ 170mA, 10V | 2V @ 20μA | 170mA Ta | 1.5nC @ 10V | 8 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R520CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r520cpxksa1-datasheets-3840.pdf | TO-220-3 Full Pack | 3 | yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 30W Tc | TO-220AB | 6.8A | 17A | 0.52Ohm | 166 mJ | N-Channel | 630pF @ 100V | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 6.8A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IPB160N04S2L03ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb160n04s2l03atma1-datasheets-3845.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | EAR99 | ULTRA-LOW RESISTANCE | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 300W Tc | 160A | 640A | 0.0037Ohm | 810 mJ | N-Channel | 6000pF @ 15V | 2.7m Ω @ 80A, 10V | 2V @ 250μA | 160A Tc | 230nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPB06CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb06cn10ng-datasheets-3849.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 214W Tc | 100A | 400A | 0.0062Ohm | 480 mJ | N-Channel | 9200pF @ 50V | 6.2m Ω @ 100A, 10V | 4V @ 180μA | 100A Tc | 139nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BSS214NW L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss214nwl6327-datasheets-3855.pdf | SC-70, SOT-323 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 500mW Ta | 1.5A | 0.14Ohm | N-Channel | 143pF @ 10V | 140m Ω @ 1.5A, 4.5V | 1.2V @ 3.7μA | 1.5A Ta | 0.8nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
IPB100N06S205ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb100n06s205atma1-datasheets-3859.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 300W Tc | 100A | 400A | 0.0047Ohm | 810 mJ | N-Channel | 5110pF @ 25V | 4.7m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
BSS139L6906HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 76pF | 100mA | 250V | 360mW Ta | N-Channel | 76pF @ 25V | 14Ohm @ 0.1mA, 10V | 1V @ 56μA | 100mA Ta | 3.5nC @ 5V | Depletion Mode | 14 Ω | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB26CN10NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb26cn10ngatma1-datasheets-3866.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 1 | Not Qualified | R-PSSO-G2 | 35A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 71W Tc | 140A | 0.026Ohm | 65 mJ | N-Channel | 2070pF @ 50V | 26m Ω @ 35A, 10V | 4V @ 39μA | 35A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
RDN080N25FU6 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rdn080n25fu6-datasheets-3736.pdf | TO-220-3 Full Pack | yes | unknown | 35W | FET General Purpose Power | 8A | Single | 35W Tc | 8A | 250V | N-Channel | 543pF @ 10V | 500m Ω @ 4A, 10V | 4V @ 1mA | 8A Ta | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP322PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp322pl6327htsa1-datasheets-3797.pdf | TO-261-4, TO-261AA | 4 | No | 1.8W | 1 | PG-SOT223-4 | 372pF | 4.6 ns | 4.3ns | 8.3 ns | 21.2 ns | 1A | 20V | 100V | 1.8W Ta | P-Channel | 372pF @ 25V | 800mOhm @ 1A, 10V | 1V @ 380μA | 1A Tc | 16.5nC @ 10V | 800 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
2SK3403(Q) | Toshiba Semiconductor and Storage | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3403q-datasheets-3744.pdf | TO-220-3, Short Tab | Lead Free | 3 | No | Single | 100W | 1 | 28ns | 10 ns | 13A | 30V | 100W Tc | 450V | N-Channel | 1600pF @ 25V | 400m Ω @ 6A, 10V | 5V @ 1mA | 13A Ta | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
SSR1N60BTM_F080 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ssu1n60btuws-datasheets-4777.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 600V | 2.5W Ta 28W Tc | N-Channel | 215pF @ 25V | 12Ohm @ 450mA, 10V | 4V @ 250μA | 900mA Tc | 7.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RDN150N20FU6 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rdn150n20fu6-datasheets-3747.pdf | TO-220-3 Full Pack | yes | EAR99 | 40W | 15A | 40W Tc | 200V | N-Channel | 1224pF @ 10V | 160m Ω @ 7.5A, 10V | 4V @ 1mA | 15A Ta | 64nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS138NL6433HTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss138nl6433htma1-datasheets-3753.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 41pF | 230mA | 60V | 360mW Ta | N-Channel | 41pF @ 25V | 3.5Ohm @ 230mA, 10V | 1.4V @ 250μA | 230mA Ta | 1.4nC @ 10V | 3.5 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
BSR316PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-bsr316pl6327htsa1-datasheets-3757.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | e3 | DUAL | GULL WING | 260 | 3 | 40 | 500mW | 1 | Not Qualified | 6ns | 360mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 500mW Ta | 20 pF | P-Channel | 165pF @ 25V | 1.8 Ω @ 360mA, 10V | 1V @ 170μA | 360mA Ta | 7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
BSC152N10NSFGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc152n10nsfgatma1-datasheets-3761.pdf | 8-PowerTDFN | 5 | 8 | no | EAR99 | No | DUAL | FLAT | 8 | 114W | 1 | R-PDSO-F5 | 14 ns | 24ns | 6 ns | 22 ns | 9.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 114W Tc | 252A | N-Channel | 1900pF @ 50V | 15.2m Ω @ 25A, 10V | 4V @ 72μA | 9.4A Ta 63A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
RDN120N25FU6 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rdn120n25-datasheets-9622.pdf | TO-220-3 Full Pack | yes | 40W | FET General Purpose Power | 12A | Single | 40W Tc | 250V | N-Channel | 1224pF @ 10V | 210m Ω @ 6A, 10V | 4V @ 1mA | 12A Ta | 62nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS169L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss169l6327htsa1-datasheets-3767.pdf | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 68pF | 170mA | 100V | 360mW Ta | N-Channel | 68pF @ 25V | 6Ohm @ 170mA, 10V | 1.8V @ 50μA | 170mA Ta | 2.8nC @ 7V | Depletion Mode | 6 Ω | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS139L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 76pF | 100mA | 250V | 360mW Ta | N-Channel | 76pF @ 25V | 14Ohm @ 0.1mA, 10V | 1V @ 56μA | 100mA Ta | 3.5nC @ 5V | Depletion Mode | 14 Ω | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS126L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss126e6906-datasheets-7116.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 500mW | 1 | SOT-23-3 | 28pF | 21mA | 20V | 600V | 500mW Ta | N-Channel | 28pF @ 25V | 500Ohm @ 16mA, 10V | 1.6V @ 8μA | 21mA Ta | 2.1nC @ 5V | Depletion Mode | 500 Ω | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
BSP321PL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp321pl6327htsa1-datasheets-3778.pdf | TO-261-4, TO-261AA | 4 | PG-SOT223-4 | 319pF | 980mA | 100V | 1.8W Ta | P-Channel | 319pF @ 25V | 900mOhm @ 980mA, 10V | 4V @ 380μA | 980mA Tc | 12nC @ 10V | 900 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS159NL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss159ne6327-datasheets-7184.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 44pF | 230mA | 60V | 360mW Ta | N-Channel | 44pF @ 25V | 3.5Ohm @ 160mA, 10V | 2.4V @ 26μA | 230mA Ta | 2.9nC @ 5V | Depletion Mode | 3.5 Ω | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCA8048-H(TE12L,Q | Toshiba Semiconductor and Storage | $1.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 8 | EAR99 | No | 2.8W | 1 | FET General Purpose Power | 3.6ns | 7.3 ns | 35A | 20V | Single | 60V | 1.6W Ta 45W Tc | N-Channel | 7540pF @ 10V | 6.6m Ω @ 18A, 10V | 2.3V @ 1mA | 35A Ta | 90nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
BSS209PW L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss209pwl6327-datasheets-3787.pdf | SC-70, SOT-323 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | compliant | 8541.21.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 300mW Ta | 0.58A | 0.55Ohm | P-Channel | 89.9pF @ 15V | 550m Ω @ 580mA, 4.5V | 1.2V @ 3.5μA | 580mA Ta | 1.38nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
BSS306NL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss306nl6327htsa1-datasheets-3793.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 275pF | 2.3A | 30V | 500mW Ta | N-Channel | 275pF @ 15V | 57mOhm @ 2.3A, 10V | 2V @ 11μA | 2.3A Ta | 1.5nC @ 5V | 57 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
NTD5804NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/onsemiconductor-ntd5804nt4g-datasheets-3677.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 4 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 71W | 1 | FET General Purpose Power | R-PSSO-G2 | 11.8 ns | 18.7ns | 5.9 ns | 26.8 ns | 69A | 20V | SILICON | DRAIN | SWITCHING | 2V | 71W Tc | 0.0085Ohm | 40V | N-Channel | 2850pF @ 25V | 8.5m Ω @ 30A, 10V | 3.5V @ 250μA | 69A Tc | 45nC @ 10V | 5V 10V | ±20V |
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