Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB08CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb08cn10ng-datasheets-4117.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 167W Tc | 95A | 380A | 0.0082Ohm | 262 mJ | N-Channel | 6660pF @ 50V | 8.2m Ω @ 95A, 10V | 4V @ 130μA | 95A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTD5806NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntd5806nt4g-datasheets-3741.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 19MOhm | 4 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 260 | 4 | Single | 40 | 40W | 1 | FET General Purpose Power | R-PSSO-G2 | 10.6 ns | 49ns | 2.6 ns | 14.2 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 40W Tc | 65A | 38 mJ | 40V | N-Channel | 860pF @ 25V | 19m Ω @ 15A, 10V | 2.5V @ 250μA | 33A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| IRFS644B_FP001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-irfs644bfp001-datasheets-4124.pdf | TO-220-3 Full Pack | TO-220F | 250V | 43W Tc | N-Channel | 1600pF @ 25V | 280mOhm @ 7A, 10V | 4V @ 250μA | 14A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD33CN10NGBUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd33cn10ngbuma1-datasheets-4125.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 58W Tc | TO-252AA | 27A | 108A | 0.033Ohm | 47 mJ | N-Channel | 1570pF @ 50V | 33m Ω @ 27A, 10V | 4V @ 29μA | 27A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPB80N06S2L11ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2l11atma1-datasheets-4131.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 158W Tc | 80A | 320A | 0.0147Ohm | 280 mJ | N-Channel | 2075pF @ 25V | 10.7m Ω @ 60A, 10V | 2V @ 93μA | 80A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD16CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb16cn10ng-datasheets-3887.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 100W Tc | 53A | 212A | 0.016Ohm | 107 mJ | N-Channel | 3220pF @ 50V | 16m Ω @ 53A, 10V | 4V @ 61μA | 53A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPD50R520CP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd50r520cp-datasheets-4138.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | compliant | 8541.29.00.95 | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 550V | 500V | 66W Tc | TO-252AA | 7.1A | 15A | 0.52Ohm | 166 mJ | N-Channel | 680pF @ 100V | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 7.1A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPD25CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp26cne8ng-datasheets-1266.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 71W Tc | 35A | 140A | 0.025Ohm | 65 mJ | N-Channel | 2070pF @ 40V | 25m Ω @ 35A, 10V | 4V @ 39μA | 35A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSS308PEL6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss308pel6327htsa1-datasheets-4078.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | SOT-23-3 | 500pF | 2A | 30V | 500mW Ta | P-Channel | 500pF @ 15V | 80mOhm @ 2A, 10V | 2V @ 11μA | 2A Ta | 5nC @ 10V | 80 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD160N04LGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipd160n04lgbtma1-datasheets-4082.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 31W Tc | TO-252AA | 30A | 210A | 0.016Ohm | 5 mJ | N-Channel | 1200pF @ 20V | 16m Ω @ 30A, 10V | 2V @ 10μA | 30A Tc | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPB80N06S2L-H5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2lh5atma4-datasheets-3553.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 300W Tc | 80A | 320A | 0.0062Ohm | 700 mJ | N-Channel | 5000pF @ 25V | 4.7m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPD082N10N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi086n10n3gxksa1-datasheets-9282.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 125W Tc | 80A | 320A | 0.0082Ohm | 110 mJ | N-Channel | 3980pF @ 50V | 8.2m Ω @ 73A, 10V | 3.5V @ 75μA | 80A Tc | 55nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPD068N10N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd068n10n3gbtma1-datasheets-4020.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 150W Tc | 90A | 360A | 0.0068Ohm | 130 mJ | N-Channel | 4910pF @ 50V | 6.8m Ω @ 90A, 10V | 3.5V @ 90μA | 90A Tc | 68nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD170N04NGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd170n04ngbtma1-datasheets-4026.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | no | EAR99 | No | SINGLE | GULL WING | 4 | 1 | R-PSSO-G2 | 5.7 ns | 1ns | 2.2 ns | 7 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 31W Tc | TO-252AA | 210A | 0.017Ohm | 5 mJ | N-Channel | 880pF @ 20V | 17m Ω @ 30A, 10V | 4V @ 10μA | 30A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPB80N06S3-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s305-datasheets-1109.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | 40 | 165W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50ns | 47 ns | 46 ns | 80A | 20V | SILICON | DRAIN | 165W Tc | 320A | 345 mJ | 55V | N-Channel | 10760pF @ 25V | 5.1m Ω @ 63A, 10V | 4V @ 110μA | 80A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPD096N08N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd096n08n3gbtma1-datasheets-4034.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 100W Tc | 73A | 292A | 0.0096Ohm | 90 mJ | N-Channel | 2410pF @ 40V | 9.6m Ω @ 46A, 10V | 3.5V @ 46μA | 73A Tc | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD30N06S223ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd30n06s223atma1-datasheets-4040.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 100W Tc | 30A | 120A | 0.023Ohm | 150 mJ | N-Channel | 901pF @ 25V | 23m Ω @ 21A, 10V | 4V @ 50μA | 30A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S2L07ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2l07atma1-datasheets-4046.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 210W Tc | 80A | 320A | 0.0097Ohm | 450 mJ | N-Channel | 3160pF @ 25V | 6.7m Ω @ 60A, 10V | 2V @ 150μA | 80A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD50N06S2L13ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50n06s2l13atma1-datasheets-4050.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | ULTRA-LOW RESISTANCE | AEC-Q101 | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 136W Tc | 50A | 200A | 0.0167Ohm | 240 mJ | N-Channel | 1800pF @ 25V | 12.7m Ω @ 34A, 10V | 2V @ 80μA | 50A Tc | 69nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD16CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp16cne8ng-datasheets-1118.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 100W Tc | 53A | 212A | 0.016Ohm | 107 mJ | N-Channel | 3230pF @ 40V | 16m Ω @ 53A, 10V | 4V @ 61μA | 53A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPD30N03S2L07ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineon-ipd30n03s2l07atma1-datasheets-1983.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 10 ns | 30ns | 16 ns | 40 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 136W Tc | 120A | 0.0098Ohm | 250 mJ | N-Channel | 1900pF @ 25V | 6.7m Ω @ 30A, 10V | 2V @ 85μA | 30A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD50R399CP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ipd50r399cp-datasheets-4065.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | compliant | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 550V | 500V | 83W Tc | TO-252AA | 9A | 20A | 0.399Ohm | 215 mJ | N-Channel | 890pF @ 100V | 399m Ω @ 4.9A, 10V | 3.5V @ 330μA | 9A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPB50CN10NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb50cn10ngatma1-datasheets-4070.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 1 | Not Qualified | R-PSSO-G2 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 44W Tc | 80A | 0.05Ohm | 29 mJ | N-Channel | 1090pF @ 50V | 50m Ω @ 20A, 10V | 4V @ 20μA | 20A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPD12CN10NGBUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp12cn10ng-datasheets-1275.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | no | EAR99 | FAST SWITCHING | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 125W Tc | TO-252AA | 67A | 268A | 0.0124Ohm | 154 mJ | N-Channel | 4320pF @ 50V | 12.4m Ω @ 67A, 10V | 4V @ 83μA | 67A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPD14N06S280ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd14n06s280atma1-datasheets-4003.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 47W Tc | 17A | 68A | 0.08Ohm | 43 mJ | N-Channel | 293pF @ 25V | 80m Ω @ 7A, 10V | 4V @ 14μA | 17A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPA50R299CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipa50r299cpxksa1-datasheets-3936.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 104W | 1 | Not Qualified | 35 ns | 14ns | 12 ns | 80 ns | 12A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 550V | 104W Tc | TO-220AB | 26A | 0.299Ohm | 289 mJ | N-Channel | 1190pF @ 100V | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 12A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IPB80N06S209ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s209atma1-datasheets-3943.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 190W Tc | 80A | 320A | 0.0088Ohm | 370 mJ | N-Channel | 2360pF @ 25V | 8.8m Ω @ 50A, 10V | 4V @ 125μA | 80A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPB12CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp12cne8ng-datasheets-1234.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85V | 85V | 125W Tc | 67A | 268A | 0.0129Ohm | 154 mJ | N-Channel | 4340pF @ 40V | 12.9m Ω @ 67A, 10V | 4V @ 83μA | 67A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPB80N04S204ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s204atma1-datasheets-3954.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 300W Tc | 80A | 320A | 0.0034Ohm | 810 mJ | N-Channel | 5300pF @ 25V | 3.4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| 2SK4021(Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk4021q-datasheets-3958.pdf | TO-251-3 Stub Leads, IPak | 6.5mm | 5.5mm | 2.3mm | Lead Free | 3 | No | Single | 15ns | 15 ns | 4.5A | 20V | 250V | 20W Tc | N-Channel | 440pF @ 10V | 1 Ω @ 2.5A, 10V | 3.5V @ 1mA | 4.5A Ta | 10nC @ 10V | 10V | ±20V |
