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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPI037N08N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb035n08n3gatma1-datasheets-8879.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 80V | 214W Tc | N-Channel | 8110pF @ 40V | 3.75mOhm @ 100A, 10V | 3.5V @ 155μA | 100A Tc | 117nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD135N08N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd135n08n3gatma1-datasheets-4635.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 79W Tc | TO-252AA | 45A | 180A | 0.0135Ohm | 50 mJ | N-Channel | 1730pF @ 40V | 13.5m Ω @ 45A, 10V | 3.5V @ 33μA | 45A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||
| IPI16CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp16cne8ng-datasheets-1118.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 85V | 85V | 100W Tc | 53A | 212A | 0.0165Ohm | 107 mJ | N-Channel | 3230pF @ 40V | 16.5m Ω @ 53A, 10V | 4V @ 61μA | 53A Tc | 48nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IPI22N03S4L15AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ipb22n03s4l15atma1-datasheets-3227.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | ULTRA LOW RESISTANCE | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 31W Tc | 22A | 88A | 0.0149Ohm | 20 mJ | N-Channel | 980pF @ 25V | 14.9m Ω @ 22A, 10V | 2.2V @ 10μA | 22A Tc | 14nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IPI05CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb05cn10ng-datasheets-3911.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 300W Tc | 100A | 400A | 0.0054Ohm | 826 mJ | N-Channel | 12000pF @ 50V | 5.4m Ω @ 100A, 10V | 4V @ 250μA | 100A Tc | 181nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IPI08CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb08cn10ng-datasheets-4117.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 167W Tc | 95A | 380A | 0.0085Ohm | 262 mJ | N-Channel | 6660pF @ 50V | 8.5m Ω @ 95A, 10V | 4V @ 130μA | 95A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IPI100P03P3L-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi100p03p3l04-datasheets-4246.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 4mOhm | EAR99 | 3 | Single | 200W | 45ns | 180 ns | 200 ns | 100A | 5V | 30V | 200W Tc | -30V | P-Channel | 9300pF @ 25V | 4.3m Ω @ 80A, 10V | 2.1V @ 475μA | 100A Tc | 200nC @ 10V | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||||||||
| IPI100N08N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp100n08n3gxksa1-datasheets-0887.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | compliant | NO | SINGLE | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 100W Tc | 70A | 280A | 0.01Ohm | 90 mJ | N-Channel | 2410pF @ 40V | 10m Ω @ 46A, 10V | 3.5V @ 46μA | 70A Tc | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPI037N06L3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb034n06l3gatma1-datasheets-8225.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | NO | SINGLE | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 167W Tc | 90A | 360A | 0.0037Ohm | 165 mJ | N-Channel | 13000pF @ 30V | 3.7m Ω @ 90A, 10V | 2.2V @ 93μA | 90A Tc | 79nC @ 4.5V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPI070N08N3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb067n08n3gatma1-datasheets-8491.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 136W Tc | 80A | 320A | 0.0067Ohm | 150 mJ | N-Channel | 3840pF @ 40V | 7m Ω @ 73A, 10V | 3.5V @ 73μA | 80A Tc | 56nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
| IPI04CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi04cn10ng-datasheets-4192.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 300W Tc | 100A | 400A | 0.0042Ohm | 1000 mJ | N-Channel | 13800pF @ 50V | 4.2m Ω @ 100A, 10V | 4V @ 250μA | 100A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IPD80N06S3-09 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd80n06s309-datasheets-4197.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | ULTRA LOW RESISTANCE | unknown | 8541.29.00.95 | e3 | MATTE TIN | GULL WING | 4 | Single | 107W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 42ns | 37 ns | 26 ns | 80A | 20V | SILICON | DRAIN | 107W Tc | TO-252AA | 320A | 0.0084Ohm | 170 mJ | 55V | N-Channel | 6100pF @ 25V | 8.4m Ω @ 40A, 10V | 4V @ 55μA | 80A Tc | 88nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IPD49CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp50cn10ngxksa1-datasheets-2295.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 44W Tc | TO-252AA | 20A | 80A | 0.049Ohm | 29 mJ | N-Channel | 1090pF @ 50V | 49m Ω @ 20A, 10V | 4V @ 20μA | 20A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IPI075N15N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi075n15n3ghksa1-datasheets-4204.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 150V | 300W Tc | N-Channel | 5470pF @ 75V | 7.5m Ω @ 100A, 10V | 4V @ 270μA | 100A Tc | 93nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S2L05ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2l05atma1-datasheets-4210.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 19 ns | 93ns | 90 ns | 67 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 0.0057Ohm | 800 mJ | N-Channel | 5700pF @ 25V | 4.5m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| IPB80N06S2L09ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2l09atma1-datasheets-4143.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 190W Tc | 80A | 320A | 0.011Ohm | 370 mJ | N-Channel | 2620pF @ 25V | 8.2m Ω @ 52A, 10V | 2V @ 125μA | 80A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD64CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd64cn10ng-datasheets-4147.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 44W Tc | TO-252AA | 17A | 68A | 0.064Ohm | 34 mJ | N-Channel | 569pF @ 50V | 64m Ω @ 17A, 10V | 4V @ 20μA | 17A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IPI028N08N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp028n08n3gxksa1-datasheets-4327.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 3 | EAR99 | SINGLE | 1 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 300W Tc | 400A | 0.0028Ohm | N-Channel | 14200pF @ 40V | 2.8m Ω @ 100A, 10V | 3.5V @ 270μA | 100A Tc | 206nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPI070N06N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi070n06ng-datasheets-4155.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 250W Tc | 80A | 320A | 0.007Ohm | 530 mJ | N-Channel | 4100pF @ 30V | 7m Ω @ 80A, 10V | 4V @ 180μA | 80A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IPI06CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb06cn10ng-datasheets-3849.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 214W Tc | 100A | 400A | 0.0065Ohm | 480 mJ | N-Channel | 9200pF @ 50V | 6.5m Ω @ 100A, 10V | 4V @ 180μA | 100A Tc | 139nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IPI024N06N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp024n06n3gxksa1-datasheets-2413.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 60V | 250W Tc | N-Channel | 23000pF @ 30V | 2.4mOhm @ 100A, 10V | 4V @ 196μA | 120A Tc | 275nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI032N06N3 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb029n06n3gatma1-datasheets-7548.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 188W Tc | 120A | 480A | 0.0032Ohm | 235 mJ | N-Channel | 13000pF @ 30V | 3.2m Ω @ 100A, 10V | 4V @ 118μA | 120A Tc | 165nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IPI040N06N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp040n06n3gxksa1-datasheets-3660.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 60V | 188W Tc | N-Channel | 11000pF @ 30V | 4mOhm @ 90A, 10V | 4V @ 90μA | 90A Tc | 98nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB79CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb79cn10ng-datasheets-4178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 31W Tc | 13A | 52A | 0.079Ohm | 17 mJ | N-Channel | 716pF @ 50V | 79m Ω @ 13A, 10V | 4V @ 12μA | 13A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IPB08CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb08cn10ng-datasheets-4117.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 167W Tc | 95A | 380A | 0.0082Ohm | 262 mJ | N-Channel | 6660pF @ 50V | 8.2m Ω @ 95A, 10V | 4V @ 130μA | 95A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| NTD5806NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/onsemiconductor-ntd5806nt4g-datasheets-3741.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 19MOhm | 4 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 260 | 4 | Single | 40 | 40W | 1 | FET General Purpose Power | R-PSSO-G2 | 10.6 ns | 49ns | 2.6 ns | 14.2 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 40W Tc | 65A | 38 mJ | 40V | N-Channel | 860pF @ 25V | 19m Ω @ 15A, 10V | 2.5V @ 250μA | 33A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||
| IRFS644B_FP001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-irfs644bfp001-datasheets-4124.pdf | TO-220-3 Full Pack | TO-220F | 250V | 43W Tc | N-Channel | 1600pF @ 25V | 280mOhm @ 7A, 10V | 4V @ 250μA | 14A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD33CN10NGBUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd33cn10ngbuma1-datasheets-4125.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 58W Tc | TO-252AA | 27A | 108A | 0.033Ohm | 47 mJ | N-Channel | 1570pF @ 50V | 33m Ω @ 27A, 10V | 4V @ 29μA | 27A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IPB80N06S2L11ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2l11atma1-datasheets-4131.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 158W Tc | 80A | 320A | 0.0147Ohm | 280 mJ | N-Channel | 2075pF @ 25V | 10.7m Ω @ 60A, 10V | 2V @ 93μA | 80A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD16CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb16cn10ng-datasheets-3887.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 100W Tc | 53A | 212A | 0.016Ohm | 107 mJ | N-Channel | 3220pF @ 50V | 16m Ω @ 53A, 10V | 4V @ 61μA | 53A Tc | 48nC @ 10V | 10V | ±20V |
