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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRL520NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | NOT SPECIFIED | NOT SPECIFIED | 100V | 3.8W Ta 48W Tc | N-Channel | 440pF @ 25V | 180m Ω @ 6A, 10V | 2V @ 250μA | 10A Tc | 20nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7663TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7663-datasheets-8462.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 20V | P-Channel | 2520pF @ 10V | 20m Ω @ 7A, 4.5V | 1.2V @ 250μA | 8.2A Ta | 45nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL23N20D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 200V | 3.8W Ta 170W Tc | N-Channel | 1960pF @ 25V | 100mOhm @ 14A, 10V | 5.5V @ 250μA | 24A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9634G | Vishay Siliconix | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi9634g-datasheets-1591.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | Unknown | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 680pF | 12 ns | 23ns | 21 ns | 34 ns | 4.1A | 20V | 250V | 35W Tc | 1Ohm | P-Channel | 680pF @ 25V | -4 V | 1Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 38nC @ 10V | 1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF1010ESTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 60V | 200W Tc | N-Channel | 3210pF @ 25V | 12mOhm @ 50A, 10V | 4V @ 250μA | 84A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 180W Tc | 75A | 290A | 0.011Ohm | 250 mJ | N-Channel | 3210pF @ 25V | 11m Ω @ 43A, 10V | 4V @ 250μA | 85A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF9Z34NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED, HIGH RELIABILITY | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 68W Tc | 19A | 68A | 0.1Ohm | 180 mJ | P-Channel | 620pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFBC40L | Vishay Siliconix | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc40spbf-datasheets-1879.pdf | 600V | 6.2A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Contains Lead | 2.387001g | 1 | Single | 130W | I2PAK | 1.3nF | 13 ns | 18ns | 20 ns | 55 ns | 6.2A | 20V | 600V | 3.1W Ta 130W Tc | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF840LCL | Vishay Siliconix | $1.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf840lclpbf-datasheets-5874.pdf | 500V | 8A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | Contains Lead | 2.387001g | 1 | Single | I2PAK | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 3.1W Ta 125W Tc | 850mOhm | 500V | N-Channel | 1100pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| 94-4764 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 30V | 3.8W Ta 200W Tc | N-Channel | 5000pF @ 25V | 6mOhm @ 71A, 10V | 1V @ 250μA | 140A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5305L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 55V | 3.8W Ta 110W Tc | P-Channel | 1200pF @ 25V | 60mOhm @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL33N15D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-262-3 Long Leads, I2Pak, TO-262AA | NOT SPECIFIED | NOT SPECIFIED | 150V | 3.8W Ta 170W Tc | N-Channel | 2020pF @ 25V | 56m Ω @ 20A, 10V | 5.5V @ 250μA | 33A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3705NSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 170W Tc | 89A | 310A | 0.012Ohm | 340 mJ | N-Channel | 3600pF @ 25V | 10m Ω @ 46A, 10V | 2V @ 250μA | 89A Tc | 98nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IRLIZ14G | Vishay Siliconix | $5.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irliz14gpbf-datasheets-3414.pdf | 60V | 8A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | TO-220-3 | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 8A | 10V | 60V | 27W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 4.8A, 5V | 2V @ 250μA | 8A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||
| IRFS23N15D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs23n15d-datasheets-1502.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 136W Tc | 23A | 92A | 0.09Ohm | 260 mJ | N-Channel | 1200pF @ 25V | 90m Ω @ 14A, 10V | 5.5V @ 250μA | 23A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRFSL31N20D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfsl31n20d-datasheets-1506.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | 8541.29.00.95 | NO | SINGLE | 1 | R-PSIP-T3 | SILICON | SINGLE | DRAIN | SWITCHING | 200V | 200V | 3.1W Ta 200W Tc | 31A | 124A | 0.082Ohm | 420 mJ | N-Channel | 2370pF @ 25V | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 31A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFZ34NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 68W Tc | 29A | 100A | 0.04Ohm | 130 mJ | N-Channel | 700pF @ 25V | 40m Ω @ 16A, 10V | 4V @ 250μA | 29A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFZ44EL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED, HIGH RELIABILITY | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 110W Tc | 48A | 192A | 0.023Ohm | 220 mJ | N-Channel | 1360pF @ 25V | 23m Ω @ 29A, 10V | 4V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFZ46NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 225 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 107W Tc | 39A | 180A | 0.0165Ohm | 152 mJ | N-Channel | 1696pF @ 25V | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 53A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFZ24NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | 260 | 40 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 45W Tc | 17A | 68A | 0.07Ohm | 71 mJ | N-Channel | 370pF @ 25V | 70m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF2807L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | 75V | 82A | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 200W | TO-262 | 3.82nF | 64ns | 82A | 75V | 230W Tc | 75V | N-Channel | 3820pF @ 25V | 13mOhm @ 43A, 10V | 4V @ 250μA | 82A Tc | 160nC @ 10V | 13 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB41N15D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 200W Tc | TO-220AB | 41A | 164A | 0.045Ohm | 470 mJ | N-Channel | 2520pF @ 25V | 45m Ω @ 25A, 10V | 5.5V @ 250μA | 41A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRF820AL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf820alpbf-datasheets-4820.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 4.83mm | 9.65mm | 2.387001g | 1 | Single | I2PAK | 340pF | 8.1 ns | 12ns | 13 ns | 16 ns | 2.5A | 30V | 500V | 50W Tc | 3Ohm | 500V | N-Channel | 340pF @ 25V | 3Ohm @ 1.5A, 10V | 4.5V @ 250μA | 2.5A Tc | 17nC @ 10V | 3 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF3315L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 150V | 3.8W Ta 94W Tc | N-Channel | 1300pF @ 25V | 82mOhm @ 12A, 10V | 4V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF820A | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf820apbf-datasheets-2338.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | Unknown | 3 | No | 1 | Single | 50W | 1 | TO-220AB | 340pF | 8.1 ns | 12ns | 13 ns | 16 ns | 2.5A | 30V | 500V | 4.5V | 50W Tc | 3Ohm | N-Channel | 340pF @ 25V | 4.5 V | 3Ohm @ 1.5A, 10V | 4.5V @ 250μA | 2.5A Tc | 17nC @ 10V | 3 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IRL1104L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 40V | 2.4W Ta 167W Tc | N-Channel | 3445pF @ 25V | 8mOhm @ 62A, 10V | 1V @ 250μA | 104A Tc | 68nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3704L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 20V | 87W Tc | N-Channel | 1996pF @ 10V | 9mOhm @ 15A, 10V | 3V @ 250μA | 77A Tc | 19nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB23N20D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.8W Ta 170W Tc | TO-220AB | 24A | 96A | 0.1Ohm | 250 mJ | N-Channel | 1960pF @ 25V | 100m Ω @ 14A, 10V | 5.5V @ 250μA | 24A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF1010NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 55V | 180W Tc | N-Channel | 3210pF @ 25V | 11mOhm @ 43A, 10V | 4V @ 250μA | 85A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14L | Vishay Siliconix | $1.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-irlz14spbf-datasheets-8912.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 2.387001g | 1 | Single | TO-262-3 | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 10A | 10V | 60V | 3.7W Ta 43W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 6A, 5V | 2V @ 250μA | 10A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V |
