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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF830AL | Vishay Siliconix | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf830aspbf-datasheets-3844.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 2.387001g | 1 | Single | I2PAK | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 3.1W Ta 74W Tc | 1.4Ohm | 500V | N-Channel | 620pF @ 25V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRF3707L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 30V | 87W Tc | N-Channel | 1990pF @ 15V | 12.5mOhm @ 15A, 10V | 3V @ 250μA | 62A Tc | 19nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB17N20D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-220-3 | TO-220AB | 200V | 3.8W Ta 140W Tc | N-Channel | 1100pF @ 25V | 170mOhm @ 9.8A, 10V | 5.5V @ 250μA | 16A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF20L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | 900V | 1.7A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Contains Lead | 2.387001g | 1 | Single | I2PAK | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.7A | 20V | 900V | 3.1W Ta 54W Tc | 8Ohm | 900V | N-Channel | 490pF @ 25V | 8Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF740AL | Vishay Siliconix | $1.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf740alpbf-datasheets-5440.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 2.387001g | 1 | Single | I2PAK | 1.03nF | 10 ns | 35ns | 22 ns | 24 ns | 10A | 30V | 400V | 3.1W Ta 125W Tc | 550mOhm | N-Channel | 1030pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF3515L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | TO-262-3 Long Leads, I2Pak, TO-262AA | 150V | 200W Tc | N-Channel | 2260pF @ 25V | 45m Ω @ 25A, 10V | 4.5V @ 250μA | 41A Tc | 107nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF530NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 100V | 3.8W Ta 70W Tc | N-Channel | 920pF @ 25V | 90mOhm @ 9A, 10V | 4V @ 250μA | 17A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ34NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 55V | 3.8W Ta 68W Tc | N-Channel | 700pF @ 25V | 40mOhm @ 16A, 10V | 4V @ 250μA | 29A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1310NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 100V | 3.8W Ta 160W Tc | N-Channel | 1900pF @ 25V | 36mOhm @ 22A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3315L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 150V | 3.8W Ta 94W Tc | N-Channel | 1300pF @ 25V | 82mOhm @ 12A, 10V | 4V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF820A | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf820apbf-datasheets-2338.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | Unknown | 3 | No | 1 | Single | 50W | 1 | TO-220AB | 340pF | 8.1 ns | 12ns | 13 ns | 16 ns | 2.5A | 30V | 500V | 4.5V | 50W Tc | 3Ohm | N-Channel | 340pF @ 25V | 4.5 V | 3Ohm @ 1.5A, 10V | 4.5V @ 250μA | 2.5A Tc | 17nC @ 10V | 3 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IRL1104L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 40V | 2.4W Ta 167W Tc | N-Channel | 3445pF @ 25V | 8mOhm @ 62A, 10V | 1V @ 250μA | 104A Tc | 68nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLBA1304 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | TO-273AA | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN OVER NICKEL | NO | SINGLE | 250 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | 95A | 740A | 0.004Ohm | 1160 mJ | N-Channel | 7660pF @ 25V | 4m Ω @ 110A, 10V | 1V @ 250μA | 185A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IRFI740GLC | Vishay Siliconix | $10.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi740glcpbf-datasheets-1795.pdf | 400V | 6A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 40W | TO-220-3 | 1.1nF | 11 ns | 31ns | 20 ns | 25 ns | 5.7A | 30V | 400V | 40W Tc | 550mOhm | 400V | N-Channel | 1100pF @ 25V | 550mOhm @ 3.4A, 10V | 4V @ 250μA | 5.7A Tc | 39nC @ 10V | 550 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IRFU9214 | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9214trpbf-datasheets-8548.pdf | -250V | -2.7A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Contains Lead | 329.988449mg | 3 | 1 | Single | 50W | 1 | TO-251AA | 220pF | 11 ns | 14ns | 17 ns | 20 ns | 2.7A | 20V | 250V | 50W Tc | 3Ohm | -250V | P-Channel | 220pF @ 25V | 3Ohm @ 1.7A, 10V | 4V @ 250μA | 2.7A Tc | 14nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRL1104 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | TO-220-3 | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 167W Tc | 104A | 416A | 0.008Ohm | 340 mJ | N-Channel | 3445pF @ 25V | 8m Ω @ 62A, 10V | 1V @ 250μA | 104A Tc | 68nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IRFB9N30A | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb9n30apbf-datasheets-8916.pdf | 300V | 9.3A | TO-220-3 | Contains Lead | TO-220AB | 920pF | 25ns | 9.3A | 300V | 96W Tc | N-Channel | 920pF @ 25V | 450mOhm @ 5.6A, 10V | 4V @ 250μA | 9.3A Tc | 33nC @ 10V | 450 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI734G | Vishay Siliconix | $0.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi734gpbf-datasheets-9976.pdf | 450V | 3.4A | TO-220-3 Full Pack, Isolated Tab | Contains Lead | TO-220-3 | 680pF | 22ns | 3.4A | 450V | 35W Tc | N-Channel | 680pF @ 25V | 1.2Ohm @ 2A, 10V | 4V @ 250μA | 3.4A Tc | 45nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3415L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 150V | 3.8W Ta 200W Tc | N-Channel | 2400pF @ 25V | 42mOhm @ 22A, 10V | 4V @ 250μA | 43A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF640NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-640007-datasheets-8258.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 225 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 150W Tc | 18A | 72A | 0.15Ohm | 247 mJ | N-Channel | 1160pF @ 25V | 150m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFZ48R | Vishay Siliconix | $1.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz48rpbf-datasheets-5378.pdf | 60V | 50A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 190W | TO-220AB | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | 60V | 190W Tc | 18mOhm | 60V | N-Channel | 2400pF @ 25V | 18mOhm @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF3710L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 225 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 200W Tc | 57A | 180A | 0.023Ohm | 280 mJ | N-Channel | 3130pF @ 25V | 23m Ω @ 28A, 10V | 4V @ 250μA | 57A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF3205L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 225 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | 75A | 390A | 0.008Ohm | 264 mJ | N-Channel | 3247pF @ 25V | 8m Ω @ 62A, 10V | 4V @ 250μA | 110A Tc | 146nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF540NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 130W Tc | 33A | 110A | 0.044Ohm | 185 mJ | N-Channel | 1960pF @ 25V | 44m Ω @ 16A, 10V | 4V @ 250μA | 33A Tc | 71nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF1404L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 225 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.8W Ta 200W Tc | 75A | 650A | 0.004Ohm | 519 mJ | N-Channel | 7360pF @ 25V | 4m Ω @ 95A, 10V | 4V @ 250μA | 162A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFB33N15D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 170W Tc | TO-220AB | 33A | 130A | 0.056Ohm | 330 mJ | N-Channel | 2020pF @ 25V | 56m Ω @ 20A, 10V | 5.5V @ 250μA | 33A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRL3215 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3215-datasheets-1409.pdf | TO-220-3 | 150V | 80W Tc | N-Channel | 775pF @ 25V | 166m Ω @ 7.2A, 10V | 2V @ 250μA | 12A Tc | 35nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7523D1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | 30V | 2.7A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Contains Lead | Micro8™ | 210pF | 2.7A | 30V | 1.25W Ta | N-Channel | 210pF @ 25V | 130mOhm @ 1.7A, 10V | 1V @ 250μA | 2.7A Ta | 12nC @ 10V | Schottky Diode (Isolated) | 130 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7467 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W Ta | N-Channel | 2530pF @ 15V | 12mOhm @ 11A, 10V | 2V @ 250μA | 11A Ta | 32nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FA57SA50LC | Vishay Semiconductor Diodes Division | $4.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 500V | 57A | SOT-227-4, miniBLOC | Contains Lead | 4 | 625W | SOT-227 | 10nF | 152ns | 57A | 500V | 625W Tc | N-Channel | 10000pF @ 25V | 80mOhm @ 34A, 10V | 4V @ 250μA | 57A Tc | 338nC @ 10V | 80 mΩ | 10V | ±20V |
