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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF5210L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 225 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 200W Tc | 38A | 140A | 0.06Ohm | 120 mJ | P-Channel | 2700pF @ 25V | 60m Ω @ 24A, 10V | 4V @ 250μA | 40A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF1104L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 225 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.4W Ta 170W Tc | 100A | 400A | 0.009Ohm | 350 mJ | N-Channel | 2900pF @ 25V | 9m Ω @ 60A, 10V | 4V @ 250μA | 100A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFIBC40GLC | Vishay Siliconix | $2.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfibc40glcpbf-datasheets-2127.pdf | 600V | 4A | TO-220-3 Full Pack, Isolated Tab | 10.6mm | 9.8mm | 4.8mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | TO-220-3 | 1.1nF | 12 ns | 20ns | 17 ns | 27 ns | 3.5A | 20V | 600V | 40W Tc | 1.2Ohm | 600V | N-Channel | 1100pF @ 25V | 1.2Ohm @ 2.1A, 10V | 4V @ 250μA | 3.5A Tc | 39nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF3706STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 88W Tc | N-Channel | 2410pF @ 10V | 8.5m Ω @ 15A, 10V | 2V @ 250μA | 77A Tc | 35nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLBA3803P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | TO-273AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | e3 | MATTE TIN OVER NICKEL | NO | SINGLE | 250 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 270W Tc | 179A | 720A | 0.005Ohm | 610 mJ | N-Channel | 5000pF @ 25V | 5m Ω @ 71A, 10V | 1V @ 250μA | 179A Tc | 140nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||
| IRF3515STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 150V | 200W Tc | N-Channel | 2260pF @ 25V | 45mOhm @ 25A, 10V | 4.5V @ 250μA | 41A Tc | 107nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL11N50A | Vishay Siliconix | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfsl11n50apbf-datasheets-8150.pdf | 500V | 11A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Contains Lead | 2.387001g | 1 | Single | TO-262-3 | 1.426nF | 14 ns | 34ns | 27 ns | 32 ns | 11A | 30V | 500V | 190W Tc | 550mOhm | 500V | N-Channel | 1426pF @ 25V | 550mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 51nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRLML5203 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.25W Ta | 3A | 24A | 0.098Ohm | P-Channel | 510pF @ 25V | 98m Ω @ 3A, 10V | 2.5V @ 250μA | 3A Ta | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRL3705NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 55V | 3.8W Ta 170W Tc | N-Channel | 3600pF @ 25V | 10mOhm @ 46A, 10V | 2V @ 250μA | 89A Tc | 98nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9530NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED | unknown | NO | SINGLE | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 79W Tc | 14A | 56A | 0.2Ohm | 250 mJ | P-Channel | 760pF @ 25V | 200m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLZ24NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | 55V | 3.8W Ta 45W Tc | N-Channel | 480pF @ 25V | 60m Ω @ 11A, 10V | 2V @ 250μA | 18A Tc | 15nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7207 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Tc | MS-012AA | 5.4A | 43A | 0.06Ohm | 140 mJ | P-Channel | 780pF @ 15V | 60m Ω @ 5.4A, 4.5V | 700mV @ 250μA | 5.4A Tc | 22nC @ 4.5V | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| IRF1104S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 40V | 2.4W Ta 170W Tc | N-Channel | 2900pF @ 25V | 9mOhm @ 60A, 10V | 4V @ 250μA | 100A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL540NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | EAR99 | 100V | 3.8W Ta 140W Tc | N-Channel | 1800pF @ 25V | 44m Ω @ 18A, 10V | 2V @ 250μA | 36A Tc | 74nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9540NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 225 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 140W Tc | 23A | 76A | 0.117Ohm | 430 mJ | P-Channel | 1300pF @ 25V | 117m Ω @ 11A, 10V | 4V @ 250μA | 23A Tc | 97nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRL2203NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 30V | 3.8W Ta 180W Tc | N-Channel | 3290pF @ 25V | 7mOhm @ 60A, 10V | 3V @ 250μA | 116A Tc | 60nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7534D1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | -20V | -4.3A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Contains Lead | 8 | 1.25W | Micro8™ | 1.066nF | 46ns | 4.3A | 20V | 1.25W Ta | P-Channel | 1066pF @ 10V | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250μA | 4.3A Ta | 15nC @ 5V | Schottky Diode (Isolated) | 55 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLBL1304 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | Super D2-Pak | SUPER D2-PAK | 40V | 300W Tc | N-Channel | 7660pF @ 25V | 4.5mOhm @ 110A, 10V | 1V @ 250μA | 185A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL23N15D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs23n15d-datasheets-1502.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | NOT SPECIFIED | NOT SPECIFIED | 150V | 3.8W Ta 136W Tc | N-Channel | 1200pF @ 25V | 90m Ω @ 14A, 10V | 5.5V @ 250μA | 23A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLMS4502TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | SOT-23-6 | Micro6™(TSOP-6) | 12V | 1.7W Ta | P-Channel | 1820pF @ 10V | 42mOhm @ 5.5A, 4.5V | 600mV @ 250μA | 5.5A Ta | 33nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL2910L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 100V | 3.8W Ta 200W Tc | N-Channel | 3700pF @ 25V | 26mOhm @ 29A, 10V | 2V @ 250μA | 55A Tc | 140nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3303L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 30V | 3.8W Ta 68W Tc | N-Channel | 870pF @ 25V | 26mOhm @ 20A, 10V | 1V @ 250μA | 38A Tc | 26nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU2703 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlu2703-datasheets-1564.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 245 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 45W Tc | 20A | 96A | 0.045Ohm | 77 mJ | N-Channel | 450pF @ 25V | 45m Ω @ 14A, 10V | 1V @ 250μA | 23A Tc | 15nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IRLZ34NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | 55V | 3.8W Ta 68W Tc | N-Channel | 880pF @ 25V | 35m Ω @ 16A, 10V | 2V @ 250μA | 30A Tc | 25nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010EL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 60V | 200W Tc | N-Channel | 3210pF @ 25V | 12mOhm @ 50A, 10V | 4V @ 250μA | 84A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7526D1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | -30V | -2A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Contains Lead | NOT SPECIFIED | NOT SPECIFIED | 2A | 30V | 1.25W Ta | P-Channel | 180pF @ 25V | 200m Ω @ 1.2A, 10V | 1V @ 250μA | 2A Ta | 11nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z24NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 55V | 3.8W Ta 45W Tc | P-Channel | 350pF @ 25V | 175mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL520NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | NOT SPECIFIED | NOT SPECIFIED | 100V | 3.8W Ta 48W Tc | N-Channel | 440pF @ 25V | 180m Ω @ 6A, 10V | 2V @ 250μA | 10A Tc | 20nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7663TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7663-datasheets-8462.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 20V | P-Channel | 2520pF @ 10V | 20m Ω @ 7A, 4.5V | 1.2V @ 250μA | 8.2A Ta | 45nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL23N20D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 200V | 3.8W Ta 170W Tc | N-Channel | 1960pF @ 25V | 100mOhm @ 14A, 10V | 5.5V @ 250μA | 24A Tc | 86nC @ 10V | 10V | ±30V |
