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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Width | Lead Free | Number of Terminations | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF3711ZSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 79W Tc | N-Channel | 2150pF @ 10V | 6m Ω @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP75N03L09 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb75n03l09t4g-datasheets-7845.pdf | 30V | 75A | TO-220-3 | Contains Lead | 3 | 3 | OBSOLETE (Last Updated: 2 days ago) | no | EAR99 | AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn80Pb20) | 240 | 3 | Single | 30 | 125W | 1 | FET General Purpose Power | Not Qualified | 130ns | 105 ns | 65 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 125W Tc | TO-220AB | 225A | 0.008Ohm | 1500 mJ | 30V | N-Channel | 5635pF @ 25V | 8m Ω @ 37.5A, 5V | 2V @ 250μA | 75A Tc | 75nC @ 5V | 5V | ±20V | |||||||||||||||||||||||||||||||
| NTP75N03-006 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb75n0306t4-datasheets-9123.pdf | 30V | 75A | TO-220-3 | Contains Lead | Single | 2.5W | 130ns | 105 ns | 65 ns | 75A | 20V | 2.5W Ta 125W Tc | 30V | N-Channel | 5635pF @ 25V | 6.5m Ω @ 37.5A, 10V | 2V @ 250μA | 75A Tc | 75nC @ 5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD24N06-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd24n06t4g-datasheets-7594.pdf | 60V | 24A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | Single | 62.5W | 24ns | 27 ns | 25 ns | 24A | 20V | 1.36W Ta 62.5W Tj | 60V | N-Channel | 1200pF @ 25V | 42m Ω @ 10A, 10V | 4V @ 250μA | 24A Ta | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6617TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-649144-datasheets-8647.pdf | DirectFET™ Isometric ST | DIRECTFET™ ST | 30V | 2.1W Ta 42W Tc | N-Channel | 1300pF @ 15V | 8.1mOhm @ 15A, 10V | 2.35V @ 250μA | 14A Ta 55A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 64-2042 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 40V | 220W Tc | N-Channel | 4340pF @ 25V | 3.7mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 45W Tc | N-Channel | 870pF @ 10V | 11m Ω @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3707ZSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 57W Tc | 42A | 230A | 0.0095Ohm | 40 mJ | N-Channel | 1210pF @ 15V | 9.5m Ω @ 21A, 10V | 2.25V @ 250μA | 59A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF3709ZCSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 79W Tc | 42A | 350A | 0.0063Ohm | 60 mJ | N-Channel | 2130pF @ 15V | 6.3m Ω @ 21A, 10V | 2.25V @ 250μA | 87A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTD14N03R | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd14n03r1g-datasheets-7738.pdf | 25V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | GULL WING | 235 | 3 | Single | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 27 ns | 9.6 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 1.04W Ta 20.8W Tc | 11.4A | 28A | 0.13Ohm | 25V | N-Channel | 115pF @ 20V | 95m Ω @ 5A, 10V | 2V @ 250μA | 2.5A Ta | 1.8nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF6691TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | 20V | 32A | DirectFET™ Isometric MT | Contains Lead | No SVHC | 7 | No | 2.8W | DIRECTFET™ MT | 6.58nF | 650mV | 23 ns | 95ns | 10 ns | 25 ns | 32A | 12V | 20V | 20V | 2.5V | 2.8W Ta 89W Tc | 32 ns | 1.8mOhm | 20V | N-Channel | 6580pF @ 10V | 2.5 V | 1.8mOhm @ 15A, 10V | 2.5V @ 250μA | 32A Ta 180A Tc | 71nC @ 4.5V | 1.8 mΩ | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
| IRF3711ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 79W Tc | N-Channel | 2150pF @ 10V | 6m Ω @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010EZ | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | TO-220-3 | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 140W Tc | TO-220AB | 75A | 340A | 0.0085Ohm | 99 mJ | N-Channel | 2810pF @ 25V | 8.5m Ω @ 51A, 10V | 4V @ 100μA | 75A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-220-3 | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 140W Tc | TO-220AB | 75A | 360A | 0.0075Ohm | 130 mJ | N-Channel | 2840pF @ 25V | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715ZSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 45W Tc | N-Channel | 870pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD20N03L27-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd20n03l27t4g-datasheets-7438.pdf | 30V | 20A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | Single | 74W | 137ns | 31 ns | 38 ns | 20A | 20V | 1.75W Ta 74W Tc | 30V | N-Channel | 1260pF @ 25V | 27m Ω @ 10A, 5V | 2V @ 250μA | 20A Ta | 18.9nC @ 10V | 4V 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD15N06L-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd15n06lt4-datasheets-9111.pdf | 60V | 15A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 120ns | 15A | 1.5W Ta 48W Tj | N-Channel | 440pF @ 25V | 100m Ω @ 7.5A, 5V | 2V @ 250μA | 15A Ta | 20nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD20N06-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd20n06t4g-datasheets-3486.pdf | 60V | 20A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | Single | 60W | 60.5ns | 37.1 ns | 27.1 ns | 20A | 20V | 1.88W Ta 60W Tj | 60V | N-Channel | 1015pF @ 25V | 46m Ω @ 10A, 10V | 4V @ 250μA | 20A Ta | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP45N06L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb45n06lt4g-datasheets-0452.pdf | 60V | 45A | TO-220-3 | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn80Pb20) | 240 | 3 | Single | 30 | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 341ns | 158 ns | 36 ns | 45A | 15V | SILICON | DRAIN | SWITCHING | 2.4W Ta 125W Tj | TO-220AB | 150A | 0.028Ohm | 240 mJ | 60V | N-Channel | 1700pF @ 25V | 28m Ω @ 22.5A, 5V | 2V @ 250μA | 45A Ta | 32nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||
| NTHS5445T1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nths5445t1-datasheets-9245.pdf | -8V | -5.2A | 8-SMD, Flat Lead | Contains Lead | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | C BEND | 8 | 1 | Other Transistors | Not Qualified | 5.2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 8V | 8V | 1.3W Ta | 0.035Ohm | P-Channel | 35m Ω @ 5.2A, 4.5V | 450mV @ 250μA | 5.2A Ta | 26nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| NTD15N06-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd15n06001-datasheets-9247.pdf | 60V | 15A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 25ns | 15A | 1.5W Ta 48W Tj | N-Channel | 450pF @ 25V | 90m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Ta | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD18N06-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd18n06t4g-datasheets-8023.pdf | 60V | 18A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | Single | 55W | 23ns | 20 ns | 19 ns | 18A | 20V | 2.1W Ta 55W Tj | 60V | N-Channel | 710pF @ 25V | 60m Ω @ 9A, 10V | 4V @ 250μA | 18A Ta | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6620TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-649145-datasheets-6504.pdf | 20V | 27A | DirectFET™ Isometric MX | 5.05mm | Lead Free | No SVHC | 2.7mOhm | 7 | No | 2.8W | DIRECTFET™ MX | 4.13nF | 18 ns | 80ns | 6.6 ns | 20 ns | 22A | 20V | 20V | 20V | 2.45V | 2.8W Ta 89W Tc | 23 ns | 2.1Ohm | 20V | N-Channel | 4130pF @ 10V | 2.45 V | 2.7mOhm @ 27A, 10V | 2.45V @ 250μA | 27A Ta 150A Tc | 42nC @ 4.5V | 2.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTF3055-160T3LF | ON Semiconductor | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntf3055160t1-datasheets-9179.pdf | 60V | 2A | TO-261-4, TO-261AA | Contains Lead | 4 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 9.2ns | 2A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.3W Ta | 2A | 6A | 0.16Ohm | 65 mJ | N-Channel | 280pF @ 25V | 160m Ω @ 1A, 10V | 4V @ 250μA | 2A Ta | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NIF9N05CLT3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | /files/onsemiconductor-nif9n05clt3g-datasheets-7799.pdf | 52V | 2.6A | TO-261-4, TO-261AA | Contains Lead | 4 | 4 | OBSOLETE (Last Updated: 4 days ago) | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 4 | 30 | 1.69W | 1 | FET General Purpose Power | Not Qualified | 290ns | 290 ns | 1.54 μs | 2.6A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 1.69W Ta | 10A | 0.125Ohm | 110 mJ | 52V | N-Channel | 250pF @ 35V | 125m Ω @ 2.6A, 10V | 2.5V @ 100μA | 2.6A Ta | 7nC @ 4.5V | 3V 10V | ±15V | ||||||||||||||||||||||||||||||
| IRF540ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 92W Tc | 36A | 140A | 0.0265Ohm | 83 mJ | N-Channel | 1770pF @ 25V | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTD20P06L-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd20p06l001-datasheets-9265.pdf | -60V | -15A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 3 | Single | 65W | 90ns | 70 ns | 28 ns | 15.5A | 20V | 60V | 65W Tc | -60V | P-Channel | 1190pF @ 25V | 150m Ω @ 7.5A, 5V | 2V @ 250μA | 15.5A Ta | 26nC @ 5V | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMS3P03R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntms3p03r2g-datasheets-7852.pdf | -30V | -3.05A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | OBSOLETE (Last Updated: 1 day ago) | no | EAR99 | AVALANCHE RATED | not_compliant | e0 | DUAL | GULL WING | 240 | 8 | 30 | 2W | 1 | Other Transistors | Not Qualified | 16ns | 45 ns | 45 ns | 2.34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 730mW Ta | 135 pF | -30V | P-Channel | 750pF @ 24V | 85m Ω @ 3.05A, 10V | 2.5V @ 250μA | 2.34A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF6609TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6609-datasheets-6487.pdf | 20V | 31A | DirectFET™ Isometric MT | 5.05mm | Lead Free | No SVHC | 2mOhm | 7 | 2.8W | DIRECTFET™ MT | 6.29nF | 800mV | 95ns | 9.8 ns | 26 ns | 150A | 20V | 20V | 20V | 2.45V | 1.8W Ta 89W Tc | 32 ns | 1.6Ohm | 20V | N-Channel | 6290pF @ 10V | 2.45 V | 2mOhm @ 31A, 10V | 2.45V @ 250μA | 31A Ta 150A Tc | 69nC @ 4.5V | 2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF3707ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 57W Tc | 42A | 230A | 0.0095Ohm | 40 mJ | N-Channel | 1210pF @ 15V | 9.5m Ω @ 21A, 10V | 2.25V @ 250μA | 59A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V |
