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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTMS4503NR2 | ON Semiconductor | $3.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntms4503nr2-datasheets-9471.pdf | 28V | 14A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | EAR99 | not_compliant | e0 | YES | DUAL | GULL WING | 235 | 8 | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | 70ns | 23 ns | 21 ns | 9A | 20V | SILICON | SWITCHING | 930mW Ta | 9A | 28V | N-Channel | 2400pF @ 16V | 8m Ω @ 14A, 10V | 2V @ 250μA | 9A Ta | 23nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSS123ATA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-bss123atc-datasheets-8314.pdf | 100V | 170mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Contains Lead | 3 | 7.994566mg | No SVHC | 3 | EAR99 | 15A | unknown | e3 | Matte Tin (Sn) | 100V | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | Not Qualified | 10 ns | 10ns | 10 ns | 15 ns | 170mA | 20V | 100V | SILICON | SWITCHING | 360mW Ta | 100V | N-Channel | 25pF @ 25V | 2 V | 6 Ω @ 170mA, 10V | 2V @ 1mA | 170mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFR120ZTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 35W Tc | TO-252AA | 8.7A | 35A | 0.19Ohm | 18 mJ | N-Channel | 310pF @ 25V | 190m Ω @ 5.2A, 10V | 4V @ 250μA | 8.7A Tc | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLIB4343 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | TO-220-3 Full Pack | TO-220AB Full-Pak | 55V | 39W Tc | N-Channel | 740pF @ 50V | 50mOhm @ 4.7A, 10V | 1V @ 250μA | 19A Tc | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF2804STRL-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2804strl7pp-datasheets-6651.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | EAR99 | FET General Purpose Power | 160A | Single | 40V | 330W Tc | 320A | N-Channel | 6930pF @ 25V | 1.6m Ω @ 160A, 10V | 4V @ 250μA | 160A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMS4404NR2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntms4404nr2-datasheets-9432.pdf | 30V | 12A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 235 | 8 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 830mW Ta | 7A | 0.0115Ohm | 300 pF | N-Channel | 2500pF @ 24V | 11.5m Ω @ 12A, 10V | 3V @ 250μA | 7A Ta | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLL024Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-261-4, TO-261AA | 4 | EAR99 | HIGH RELIABILITY | e0 | TIN LEAD | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1W Ta | 5A | 0.1Ohm | N-Channel | 380pF @ 25V | 60m Ω @ 3A, 10V | 3V @ 250μA | 5A Tc | 11nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTP13N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp13n10g-datasheets-7898.pdf | 100V | 13A | TO-220-3 | Contains Lead | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | no | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | 240 | 3 | Single | 30 | 64.7W | 1 | FET General Purpose Power | Not Qualified | 40ns | 36 ns | 20 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 64.7W Tc | TO-220AB | 0.165Ohm | 85 mJ | 100V | N-Channel | 550pF @ 25V | 165m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Ta | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| 2SK3546J0L | Panasonic Electronic Components | $12.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk3546j0l-datasheets-9445.pdf | 50V | 100mA | SC-89, SOT-490 | Lead Free | SSMini3-F1 | 12pF | 100mA | 50V | 125mW Ta | N-Channel | 12pF @ 3V | 12Ohm @ 10mA, 4V | 1.5V @ 1μA | 100mA Ta | 12 Ω | 2.5V 4V | ±7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540Z | Infineon Technologies | $0.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-220-3 | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 92W Tc | TO-220AB | 36A | 140A | 0.0265Ohm | 120 mJ | N-Channel | 1770pF @ 25V | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDN336P-NL | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdn336p-datasheets-1251.pdf | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 20V | 500mW Ta | P-Channel | 330pF @ 10V | 200mOhm @ 1.3A, 4.5V | 1.5V @ 250μA | 1.3A Ta | 5nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF450 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | 500V | 12A | TO-204AA, TO-3 | Contains Lead | 2 | 10g | No SVHC | 2 | No | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 150W | 1 | FET General Purpose Power | 35 ns | 190ns | 130 ns | 170 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 150W Tc | 48A | 0.5Ohm | 8 mJ | 500V | N-Channel | 2700pF @ 25V | 4 V | 500m Ω @ 12A, 10V | 4V @ 250μA | 12A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTP22N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb22n06t4-datasheets-9038.pdf | 60V | 22A | TO-220-3 | Contains Lead | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSFM-T3 | 39ns | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60W Tj | TO-220AB | 66A | 0.06Ohm | 72 mJ | N-Channel | 700pF @ 25V | 60m Ω @ 11A, 10V | 4V @ 250μA | 22A Ta | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 64-9146 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | DirectFET™ Isometric MT | DIRECTFET™ MT | 6.58nF | 180A | 20V | 2.8W Ta 89W Tc | N-Channel | 6580pF @ 10V | 1.8mOhm @ 15A, 10V | 2.5V @ 250μA | 32A Ta 180A Tc | 71nC @ 4.5V | 1.8 mΩ | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIB8N50K | Vishay Siliconix | $1.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfib8n50kpbf-datasheets-9318.pdf | 500V | 6.7A | TO-220-3 Full Pack, Isolated Tab | Lead Free | 3 | 3 | unknown | e0 | TIN LEAD | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 45W | 1 | FET General Purpose Power | Not Qualified | 16ns | 8.4 ns | 28 ns | 6.7A | 30V | SILICON | SWITCHING | 45W Tc | TO-220AB | 27A | 290 mJ | 500V | N-Channel | 2160pF @ 25V | 350m Ω @ 4A, 10V | 5V @ 250μA | 6.7A Tc | 89nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SI4480DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4480dyt1e3-datasheets-8336.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 186.993455mg | 35mOhm | 8 | No | 1 | Single | 2.5W | 1 | 8-SO | 12.5 ns | 12.5ns | 22 ns | 52 ns | 6A | 20V | 80V | 2.5W Ta | 35mOhm | 80V | N-Channel | 35mOhm @ 6A, 10V | 2V @ 250μA (Min) | 50nC @ 10V | 35 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTB75N06LT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp75n06l-datasheets-9231.pdf | 60V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 235 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 265ns | 75A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4W Ta 214W Tj | 225A | 0.011Ohm | 844 mJ | N-Channel | 4370pF @ 25V | 11m Ω @ 37.5A, 5V | 2V @ 250μA | 75A Ta | 92nC @ 5V | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTP60N06L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp60n06lg-datasheets-7883.pdf | 60V | 60A | TO-220-3 | Contains Lead | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | 240 | 3 | Single | 30 | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 576ns | 237 ns | 100 ns | 60A | 15V | SILICON | DRAIN | SWITCHING | 2.4W Ta 150W Tj | TO-220AB | 180A | 0.016Ohm | 454 mJ | 60V | N-Channel | 3075pF @ 25V | 16m Ω @ 30A, 5V | 2V @ 250μA | 60A Ta | 65nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||||
| NTB18N06LT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp18n06lg-datasheets-7848.pdf | 60V | 15A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn80Pb20) | GULL WING | 225 | 3 | Single | 30 | 48.4W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 121ns | 42 ns | 11 ns | 15A | 10V | SILICON | DRAIN | SWITCHING | 48.4W Tc | 45A | 0.1Ohm | 61 mJ | 60V | N-Channel | 440pF @ 25V | 100m Ω @ 7.5A, 5V | 2V @ 250μA | 15A Tc | 20nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||
| IRF3711ZCSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 79W Tc | N-Channel | 2150pF @ 10V | 6mOhm @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR4104TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 140W Tc | TO-252AA | 42A | 480A | 0.0055Ohm | 145 mJ | N-Channel | 2950pF @ 25V | 5.5m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF6623TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6623-datasheets-4357.pdf | 20V | 16A | DirectFET™ Isometric ST | 3.95mm | Lead Free | No SVHC | 5.7mOhm | 7 | No | 2.1W | 1 | DIRECTFET™ ST | 1.36nF | 40ns | 12 ns | 55A | 20V | 20V | 20V | 2.2V | 1.4W Ta 42W Tc | 20 ns | 4.4Ohm | 20V | N-Channel | 1360pF @ 10V | 2.2 V | 5.7mOhm @ 15A, 10V | 2.2V @ 250μA | 16A Ta 55A Tc | 17nC @ 4.5V | 5.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFR4104TRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 140W Tc | TO-252AA | 42A | 480A | 0.0055Ohm | 145 mJ | N-Channel | 2950pF @ 25V | 5.5m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF1404ZSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 40V | 220W Tc | N-Channel | 4340pF @ 25V | 3.7m Ω @ 75A, 10V | 4V @ 250μA | 180A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3709ZCSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 79W Tc | 42A | 350A | 0.0063Ohm | 60 mJ | N-Channel | 2130pF @ 15V | 6.3m Ω @ 21A, 10V | 2.25V @ 250μA | 87A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF4104 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-220-3 | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 140W Tc | TO-220AB | 75A | 470A | 0.0055Ohm | 220 mJ | N-Channel | 3000pF @ 25V | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| MTD20P06HDLT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | /files/onsemiconductor-mtd20p06hdlt4-datasheets-9390.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 72W Tc | 15A | 45A | 0.175Ohm | 300 mJ | P-Channel | 1190pF @ 25V | 175m Ω @ 7.5A, 5V | 2V @ 250μA | 15A Tc | 29nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| NTP30N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp30n06-datasheets-9392.pdf | 60V | 30A | TO-220-3 | Contains Lead | 3 | EAR99 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 88.2W Tc | TO-220AB | 80A | 0.042Ohm | 101 mJ | N-Channel | 1200pF @ 25V | 42m Ω @ 15A, 10V | 4V @ 250μA | 27A Ta | 46nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF540ZSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 92W Tc | 36A | 140A | 0.0265Ohm | 120 mJ | N-Channel | 1770pF @ 25V | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715ZSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 45W Tc | N-Channel | 870pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V |
