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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDU8780 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdu8780-datasheets-5502.pdf | 25V | 35A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | NOT SPECIFIED | Single | NOT SPECIFIED | 50W | 1 | 9ns | 24 ns | 43 ns | 35A | 20V | 50W Tc | 25V | N-Channel | 1440pF @ 13V | 8.5m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP295E6327T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp295e6327-datasheets-5163.pdf | 50V | 1.8A | TO-261-4, TO-261AA | Lead Free | 4 | PG-SOT223-4 | 368pF | 20ns | 1.8A | 60V | 1.8W Ta | N-Channel | 368pF @ 25V | 300mOhm @ 1.8A, 10V | 1.8V @ 400μA | 1.8A Ta | 17nC @ 10V | 300 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP316PE6327T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp316pe6327-datasheets-5601.pdf | TO-261-4, TO-261AA | 100V | 1.8W Ta | P-Channel | 146pF @ 25V | 1.8 Ω @ 680mA, 10V | 2V @ 170μA | 680mA Ta | 6.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTD5P06VT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-mtd5p06vt4-datasheets-6398.pdf | -60V | -5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 340MOhm | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | YES | GULL WING | 260 | 3 | Single | 40 | 40W | 1 | Other Transistors | R-PSSO-G2 | 11 ns | 26ns | 19 ns | 17 ns | 5A | 15V | SILICON | DRAIN | SWITCHING | 60V | 2.8V | 2.1W Ta 40W Tc | 5A | -60V | P-Channel | 510pF @ 25V | 450m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 20nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||
| SPD04N50C3T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd04n50c3t-datasheets-5525.pdf | 560V | 4.5A | TO-252-3 | Lead Free | 3 | 50W | 470pF | 4.5A | 560V | 950 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF10N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqaf10n80-datasheets-5529.pdf | TO-3P-3 Full Pack | TO-3PF | 800V | 113W Tc | N-Channel | 2700pF @ 25V | 1.05Ohm @ 3.35A, 10V | 5V @ 250μA | 6.7A Tc | 71nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP171PE6327T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp171ph6327xtsa1-datasheets-0653.pdf | -60V | -1.9A | TO-261-4, TO-261AA | Lead Free | 4 | PG-SOT223-4 | 460pF | 8ns | 1.9A | 60V | 1.8W Ta | P-Channel | 460pF @ 25V | 300mOhm @ 1.9A, 10V | 2V @ 460μA | 1.9A Ta | 20nC @ 10V | 300 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF47P06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqaf47p06-datasheets-5536.pdf | TO-3P-3 Full Pack | TO-3PF | 60V | 100W Tc | P-Channel | 3600pF @ 25V | 26mOhm @ 19A, 10V | 4V @ 250μA | 38A Tc | 110nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A25G | Diodes Incorporated | $1.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmn6a25g-datasheets-5544.pdf | 60V | 6.7A | TO-261-4, TO-261AA | Lead Free | 4 | No SVHC | no | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 40 | 1 | Not Qualified | R-PDSO-G4 | 4.8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2W Ta | 28.5A | 0.05Ohm | N-Channel | 1063pF @ 30V | 50m Ω @ 3.6A, 10V | 1V @ 250μA | 4.8A Ta | 20.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| ZXMN6A25K | Diodes Incorporated | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmn6a25k-datasheets-5530.pdf | 60V | 10.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | no | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 3 | 40 | 1 | Not Qualified | R-PSSO-G2 | 4ns | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.11W Ta | 7A | 36A | 0.05Ohm | N-Channel | 1063pF @ 30V | 50m Ω @ 3.6A, 10V | 3V @ 250μA | 7A Ta | 20.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| ZXMN10A11K | Diodes Incorporated | $2.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmn10a11k-datasheets-9709.pdf | 100V | 2.9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | no | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1.7ns | 2.4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.11W Ta | 3.5A | 9.9A | 0.35Ohm | N-Channel | 274pF @ 50V | 350m Ω @ 2.6A, 10V | 4V @ 250μA | 2.4A Ta | 5.4nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDU8796 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdu8796-datasheets-5475.pdf | TO-251-3 Short Leads, IPak, TO-251AA | compliant | NOT SPECIFIED | NOT SPECIFIED | 25V | 88W Tc | N-Channel | 2610pF @ 13V | 5.7m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 52nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN5L06-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn5l067-datasheets-5476.pdf | 50V | 280mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | 280mA | 20V | SILICON | SWITCHING | 350mW Ta | 0.28A | 3Ohm | 5 pF | 50V | N-Channel | 50pF @ 25V | 3 Ω @ 200mA, 2.7V | 1.2V @ 250μA | 280mA Ta | 1.8V 2.7V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FQP6N90 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqp6n90-datasheets-5414.pdf | TO-220-3 | 3 | yes | EAR99 | compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 167W Tc | TO-220AB | 6A | 24A | 2.3Ohm | 650 mJ | N-Channel | 1880pF @ 25V | 1.9 Ω @ 2.9A, 10V | 5V @ 250μA | 5.8A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| ZXMP2120E5TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zxmp2120e5ta-datasheets-5482.pdf | -200V | -122mA | SC-74A, SOT-753 | 3.1mm | 1.3mm | 1.8mm | Lead Free | 5 | 29.993795mg | No SVHC | 28Ohm | 5 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 5 | 1 | Single | 40 | 750mW | 1 | 7 ns | 15ns | 15 ns | 12 ns | 122mA | 20V | SILICON | SWITCHING | 200V | 750mW Ta | 7 pF | -200V | P-Channel | 100pF @ 25V | 28 Ω @ 150mA, 10V | 3.5V @ 1mA | 122mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||
| BSO4410T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso4410-datasheets-5612.pdf | 30V | 11.1A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8-SO | 1.28nF | 33ns | 11.1A | 30V | 2.5W Ta | N-Channel | 1280pF @ 25V | 13mOhm @ 11.1A, 10V | 2V @ 42μA | 11.1A Ta | 21nC @ 5V | 13 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2963(TE12L,F) | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk2963te12lf-datasheets-5493.pdf | 100V | 1A | TO-243AA | 4.6mm | 1.6mm | 2.5mm | Lead Free | 3 | Copper, Silver, Tin | No | Single | 1.5W | 1 | 13 ns | 8ns | 45 ns | 175 ns | 1A | 20V | 500mW Ta | 100V | N-Channel | 140pF @ 10V | 700m Ω @ 500mA, 10V | 2V @ 1mA | 1A Ta | 6.3nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQPF90N10V2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqp90n10v2-datasheets-5360.pdf | TO-220-3 Full Pack | TO-220F | 100V | 83W Tc | N-Channel | 6150pF @ 25V | 10mOhm @ 45A, 10V | 4V @ 250μA | 90A Tc | 191nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA38N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/onsemiconductor-fqa38n30-datasheets-5429.pdf&product=onsemiconductor-fqa38n30-6860869 | 300V | 38.4A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | 3 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 290W | 1 | Not Qualified | 80 ns | 430ns | 190 ns | 170 ns | 38.4A | 30V | SILICON | SWITCHING | 290W Tc | 0.085Ohm | 300V | N-Channel | 4400pF @ 25V | 85m Ω @ 19.2A, 10V | 5V @ 250μA | 38.4A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| HUFA75852G3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-hufa75852g3-datasheets-5432.pdf | TO-247-3 | EAR99 | compliant | 8541.29.00.95 | NO | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 150V | 500W Tc | 75A | N-Channel | 7690pF @ 25V | 16m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 480nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP170PE6327T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp170pe6327-datasheets-5688.pdf | -60V | -1.9A | TO-261-4, TO-261AA | Lead Free | PG-SOT223-4 | 410pF | 28ns | 1.9A | 60V | 1.8W Ta | P-Channel | 410pF @ 25V | 300mOhm @ 1.9A, 10V | 4V @ 250μA | 1.9A Ta | 14nC @ 10V | 300 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQH140N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqh140n10-datasheets-5439.pdf | TO-247-3 | TO-247-3 | 100V | 375W Tc | N-Channel | 7900pF @ 25V | 10mOhm @ 70A, 10V | 4V @ 250μA | 140A Tc | 285nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75645P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-hufa75645p3-datasheets-5452.pdf | 100V | 75A | TO-220-3 | Lead Free | 3 | No | Single | 310W | TO-220-3 | 3.79nF | 14 ns | 117ns | 97 ns | 41 ns | 75A | 20V | 100V | 310W Tc | 14mOhm | 100V | N-Channel | 3790pF @ 25V | 14mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 238nC @ 20V | 14 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQA10N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqa10n80-datasheets-5460.pdf | TO-3P-3, SC-65-3 | 3 | yes | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 240W Tc | 10A | 40A | 1.1Ohm | 920 mJ | N-Channel | 2700pF @ 25V | 1.05 Ω @ 4.9A, 10V | 5V @ 250μA | 9.8A Tc | 71nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75545S3S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-hufa75545p3-datasheets-5374.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 80V | 270W Tc | N-Channel | 3750pF @ 25V | 10mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 235nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA8N80C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqa8n80c-datasheets-5462.pdf | TO-3P-3, SC-65-3 | TO-3P | 800V | 220W Tc | N-Channel | 2050pF @ 25V | 1.55Ohm @ 4.2A, 10V | 5V @ 250μA | 8.4A Tc | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB7N80TM_AM002 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 800V | 3.13W Ta 167W Tc | N-Channel | 1850pF @ 25V | 1.5Ohm @ 3.3A, 10V | 5V @ 250μA | 6.6A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS87E6327T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss87h6327ftsa1-datasheets-2744.pdf | 240V | 290mA | TO-243AA | Lead Free | PG-SOT89-4-2 | 97pF | 10ns | 260mA | 240V | 1W Ta | N-Channel | 97pF @ 25V | 6Ohm @ 260mA, 10V | 1.8V @ 108μA | 260mA Ta | 5.5nC @ 10V | 6 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB05N03LAT | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb05n03la-datasheets-5628.pdf | 25V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | PG-TO263-3-2 | 3.11nF | 26ns | 80A | 25V | 94W Tc | N-Channel | 3110pF @ 15V | 4.6mOhm @ 55A, 10V | 2V @ 50μA | 80A Tc | 25nC @ 5V | 4.6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75842S3S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-hufa75842p3-datasheets-5275.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 150V | 230W Tc | N-Channel | 2730pF @ 25V | 42mOhm @ 43A, 10V | 4V @ 250μA | 43A Tc | 175nC @ 20V | 10V | ±20V |
