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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFV22N60PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n60p-datasheets-3796.pdf | 600V | 22A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 23 ns | 60 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 66A | 1000 mJ | 600V | N-Channel | 3600pF @ 25V | 350m Ω @ 11A, 10V | 5.5V @ 4mA | 22A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| BUK7907-40ATC,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk790740atc127-datasheets-5882.pdf | TO-220-5 | 5 | 12 Weeks | 5 | EAR99 | Tin | No | e3 | NO | 5 | Single | 272W | 1 | FET General Purpose Power | 2 μs | 5.7μs | 6.8 μs | 8.9 μs | 140A | 20V | 40V | SILICON | DRAIN | SWITCHING | 272W Tc | 0.007Ohm | 40V | N-Channel | 4500pF @ 25V | 7m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 108nC @ 10V | Temperature Sensing Diode | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTP1R4N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r4n60p-datasheets-5843.pdf | 600V | 1.4A | TO-220-3 | Lead Free | 3 | 2 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | Not Qualified | R-PSFM-T3 | 16ns | 16 ns | 25 ns | 1.4A | 30V | SILICON | DRAIN | SWITCHING | 50W Tc | TO-220AB | 9Ohm | 75 mJ | 600V | N-Channel | 140pF @ 25V | 9 Ω @ 700mA, 10V | 5.5V @ 25μA | 1.4A Tc | 5.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFC36N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr36n50p-datasheets-3707.pdf | 500V | 36A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 156W | 1 | Not Qualified | 23ns | 23 ns | 82 ns | 19A | 30V | SILICON | ISOLATED | SWITCHING | 156W Tc | 500V | N-Channel | 5500pF @ 25V | 190m Ω @ 18A, 10V | 5V @ 4mA | 19A Tc | 93nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTV36N50PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth36n50p-datasheets-5556.pdf | 500V | 36A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 108A | 0.17Ohm | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 170m Ω @ 500mA, 10V | 5V @ 250μA | 36A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTV26N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth26n60p-datasheets-3794.pdf | 600V | 26A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 250μA | 26A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTI10N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixti10n60p-datasheets-5893.pdf | 600V | 10A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | R-PSIP-T3 | 24ns | 18 ns | 55 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-263 | 30A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5V @ 100μA | 10A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFC26N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc26n50p-datasheets-5861.pdf | 500V | 26A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | 25ns | 20 ns | 58 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 130W Tc | 78A | 0.26Ohm | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 260m Ω @ 13A, 10V | 5.5V @ 4mA | 15A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTP4N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp4n60p-datasheets-5863.pdf | 600V | 4A | TO-220-3 | Lead Free | 3 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 89W | 1 | Not Qualified | R-PSFM-T3 | 10ns | 20 ns | 50 ns | 4A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | TO-220AB | 4A | 10A | 2Ohm | 150 mJ | 600V | N-Channel | 635pF @ 25V | 2 Ω @ 2A, 10V | 5.5V @ 100μA | 4A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTP7N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp7n60p-datasheets-5865.pdf | 600V | 7A | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 20 ns | 27ns | 26 ns | 65 ns | 7A | 30V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 7A | 14A | 400 mJ | 600V | N-Channel | 1080pF @ 25V | 1.1 Ω @ 3.5A, 10V | 5.5V @ 100μA | 7A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTV18N60PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq18n60p-datasheets-0063.pdf | 600V | 18A | PLUS-220SMD | Lead Free | 2 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 22ns | 22 ns | 62 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 54A | 0.42Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 420m Ω @ 9A, 10V | 5.5V @ 250μA | 18A Tc | 49nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFV36N50PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh36n50p-datasheets-4795.pdf | 500V | 36A | PLUS-220SMD | Lead Free | 2 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 36A | 30V | 500V | SILICON | DRAIN | SWITCHING | 5V | 540W Tc | 200 ns | 90A | 0.17Ohm | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 5 V | 170m Ω @ 500mA, 10V | 5V @ 4mA | 36A Tc | 93nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFV26N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n60p-datasheets-1292.pdf | 600V | 26A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 4mA | 26A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFC14N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc14n60p-datasheets-5873.pdf | 600V | 14A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | 27ns | 26 ns | 70 ns | 8A | 30V | SILICON | ISOLATED | SWITCHING | 125W Tc | 8A | 42A | 900 mJ | 600V | N-Channel | 2500pF @ 25V | 630m Ω @ 7A, 10V | 5.5V @ 2.5mA | 8A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFV18N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n60p-datasheets-2073.pdf | 600V | 18A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 22ns | 22 ns | 62 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 45A | 0.4Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 400m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 18A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTP2N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/ixys-ixtp2n60p-datasheets-5877.pdf | 600V | 2A | TO-220-3 | Lead Free | 3 | 25 Weeks | 3 | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 55W | 1 | FET General Purpose Power | Not Qualified | 20ns | 23 ns | 60 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 55W Tc | TO-220AB | 2A | 4A | 150 mJ | 600V | N-Channel | 240pF @ 25V | 5.1 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| MMBF2202PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-mmbf2202pt1-datasheets-6880.pdf | -20V | -300mA | SC-70, SOT-323 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 3 | Single | 40 | 150mW | 1 | Other Transistors | Not Qualified | 1ns | 1 ns | 16 ns | 300mA | 20V | SILICON | SWITCHING | -1.7V | 150mW Ta | 20V | P-Channel | 50pF @ 5V | 2.2 Ω @ 200mA, 10V | 2.4V @ 250μA | 300mA Ta | 2.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTP5N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtu5n50p-datasheets-2981.pdf | 500V | 5A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 89W | 1 | FET General Purpose Power | Not Qualified | 26ns | 24 ns | 65 ns | 4.8A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | TO-220AB | 5A | 10A | 250 mJ | 500V | N-Channel | 620pF @ 25V | 1.4 Ω @ 2.4A, 10V | 5.5V @ 50μA | 4.8A Tc | 12.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTV18N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq18n60p-datasheets-0063.pdf | 600V | 18A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 22ns | 22 ns | 62 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 54A | 0.42Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 420m Ω @ 9A, 10V | 5.5V @ 250μA | 18A Tc | 49nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTV30N60PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n60p-datasheets-1373.pdf | 600V | 30A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 5050pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 82nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTA6N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta6n50p-datasheets-5823.pdf | 500V | 6A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSSO-G2 | 28ns | 26 ns | 65 ns | 6A | 30V | SILICON | DRAIN | SWITCHING | 100W Tc | 6A | 15A | 250 mJ | 500V | N-Channel | 740pF @ 25V | 1.1 Ω @ 3A, 10V | 5V @ 50μA | 6A Tc | 14.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| BUK954R4-40B,127 | Nexperia USA Inc. | $3.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk954r440b127-datasheets-5825.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | NO | 3 | Single | 254W | 1 | FET General Purpose Power | 44 ns | 118ns | 132 ns | 197 ns | 174A | 15V | 40V | SILICON | DRAIN | SWITCHING | 254W Tc | TO-220AB | 75A | 697A | 0.0044Ohm | 961 mJ | 40V | N-Channel | 7124pF @ 25V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 64nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||
| IXTA8PN50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 500V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 8A | N-Channel | 8A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9514-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | /files/nexperiausainc-buk951455a127-datasheets-5827.pdf | TO-220-3 | 3 | Tin | No | Single | 149W | TO-220AB | 3.307nF | 26 ns | 152ns | 125 ns | 166 ns | 73A | 10V | 55V | 55V | 149W Tc | 13mOhm | 55V | N-Channel | 3307pF @ 25V | 13mOhm @ 25A, 10V | 2V @ 1mA | 73A Tc | 13 mΩ | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7508-40B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk750840b127-datasheets-5833.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 157W Tc | TO-220AB | 75A | 407A | 0.008Ohm | 241 mJ | N-Channel | 2689pF @ 25V | 8m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN003-30P,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nexperia-psmn00330p127-datasheets-8971.pdf | TO-220-3 | Lead Free | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | 8541.29.00.75 | e3 | Tin (Sn) | 3 | Single | 230W | 1 | FET General Purpose Power | 33 ns | 66ns | 115 ns | 210 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 400A | 0.004Ohm | 500 mJ | 30V | N-Channel | 9200pF @ 25V | 2.8m Ω @ 25A, 10V | 3V @ 1mA | 75A Tc | 170nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTV22N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq22n60p-datasheets-0455.pdf | 600V | 22A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 20ns | 23 ns | 60 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 66A | 1000 mJ | 600V | N-Channel | 3600pF @ 25V | 350m Ω @ 11A, 10V | 5.5V @ 250μA | 22A Tc | 62nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTY1R4N60P | IXYS | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r4n60p-datasheets-5843.pdf | 600V | 1.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 50W | 1 | R-PSSO-G2 | 16ns | 16 ns | 25 ns | 1.4A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 50W Tc | TO-252AA | 9Ohm | 75 mJ | 600V | N-Channel | 140pF @ 25V | 9 Ω @ 700mA, 10V | 5.5V @ 25μA | 1.4A Tc | 5.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFV36N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh36n50p-datasheets-4795.pdf | 500V | 36A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 90A | 0.17Ohm | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 170m Ω @ 500mA, 10V | 5V @ 4mA | 36A Tc | 93nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTV30N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50p-datasheets-3823.pdf | 500V | 30A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 75A | 0.2Ohm | 1200 mJ | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 70nC @ 10V | 10V | ±30V |
