Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK9107-55ATE,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2002 | /files/nexperiausainc-buk910755ate118-datasheets-5780.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | 4 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 272W Tc | 75A | 560A | 0.0077Ohm | 500 mJ | N-Channel | 5836pF @ 25V | 6.2m Ω @ 50A, 10V | 2V @ 1mA | 75A Tc | 108nC @ 5V | Temperature Sensing Diode | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK7575-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk7675100a118-datasheets-1584.pdf | TO-220-3 | 6.35mm | 6.35mm | 6.35mm | 3 | 4.535924g | 3 | EAR99 | Tin | No | e3 | 3 | Single | 99W | 1 | FET General Purpose Power | 8 ns | 39ns | 24 ns | 26 ns | 200mA | 20V | 100V | SILICON | DRAIN | SWITCHING | 99W Tc | TO-220AB | 92A | 0.075Ohm | 100V | N-Channel | 1210pF @ 25V | 75m Ω @ 13A, 10V | 4V @ 1mA | 23A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BUK7516-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk751655a127-datasheets-5740.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | 3 | Single | 138W | 1 | FET General Purpose Power | 16 ns | 70ns | 41 ns | 57 ns | 3.8A | 20V | 55V | SILICON | DRAIN | SWITCHING | 138W Tc | TO-220AB | 65.7A | 0.016Ohm | 120 mJ | 55V | N-Channel | 2245pF @ 25V | 16m Ω @ 25A, 10V | 4V @ 1mA | 65.7A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK7528-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | /files/nexperiausainc-buk752855a127-datasheets-5742.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 99W Tc | TO-220AB | 42A | 168A | 0.028Ohm | 58 mJ | N-Channel | 1165pF @ 25V | 28m Ω @ 25A, 10V | 4V @ 1mA | 42A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BUK7105-40ATE,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk710540ate118-datasheets-5690.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | 4 | 5 | EAR99 | Tin | No | e3 | YES | GULL WING | 5 | Single | 272W | 1 | FET General Purpose Power | R-PSSO-G4 | 35 ns | 115ns | 110 ns | 155 ns | 155A | 20V | 40V | SILICON | DRAIN | 272W Tc | 620A | 1460 mJ | 40V | N-Channel | 4500pF @ 25V | 5m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 118nC @ 10V | Temperature Sensing Diode | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQAF8N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqaf8n80-datasheets-5693.pdf | TO-3P-3 Full Pack | TO-3PF | 800V | 107W Tc | N-Channel | 2350pF @ 25V | 1.2Ohm @ 2.95A, 10V | 5V @ 250μA | 5.9A Tc | 57nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN005-30K,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | /files/nexperiausainc-psmn00530k518-datasheets-5694.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | GULL WING | 260 | 8 | 30 | 1 | FET General Purpose Power | Not Qualified | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3.5W Tc | MS-012AA | 0.0055Ohm | N-Channel | 3100pF @ 25V | 5.5m Ω @ 15A, 10V | 3V @ 1mA | 20A Tc | 34nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SPD07N60S5T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd07n60s5t-datasheets-5610.pdf | 650V | 7.3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | PG-TO252-3 | 970pF | 40ns | 7.3A | 600V | 83W Tc | N-Channel | 970pF @ 25V | 600mOhm @ 4.6A, 10V | 5.5V @ 350μA | 7.3A Tc | 35nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN038-100K,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/nexperiausainc-psmn038100k518-datasheets-5700.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | EAR99 | No | 63A | e4 | NICKEL PALLADIUM GOLD | 100V | YES | DUAL | GULL WING | 8 | 3.5W | 1 | FET General Purpose Power | 15 ns | 13ns | 25 ns | 50 ns | 6.3A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.5W Tc | MS-012AA | 100V | N-Channel | 1740pF @ 25V | 38m Ω @ 5.2A, 10V | 4V @ 1mA | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| MTD6N20ET4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-mtd6n20et4-datasheets-6415.pdf | 200V | 6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.8mm | Lead Free | 2 | No SVHC | 460MOhm | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 260 | 3 | Single | 40 | 50W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.8 ns | 29ns | 20 ns | 22 ns | 6A | 20V | 200V | SILICON | DRAIN | SWITCHING | 3V | 1.75W Ta 50W Tc | 6A | 54 mJ | 200V | N-Channel | 480pF @ 25V | 3 V | 700m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| BUK7107-40ATC,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk710740atc118-datasheets-5706.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | 4 | 5 | EAR99 | Tin | No | e3 | YES | GULL WING | 5 | Single | 272W | 1 | FET General Purpose Power | R-PSSO-G4 | 2 μs | 5.7μs | 6.8 μs | 8.9 μs | 140A | 20V | 40V | SILICON | DRAIN | SWITCHING | 272W Tc | 0.007Ohm | 1400 mJ | 40V | N-Channel | 4500pF @ 25V | 7m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 108nC @ 10V | Temperature Sensing Diode | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| HUFA76445S3S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-hufa76445s3st-datasheets-5369.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 60V | 310W Tc | N-Channel | 4965pF @ 25V | 6.5mOhm @ 75A, 10V | 3V @ 250μA | 75A Tc | 150nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO4420T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso4420-datasheets-5589.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8-SO | 2.213nF | 44ns | 13A | 30V | 2.5W Ta | N-Channel | 2213pF @ 25V | 7.8mOhm @ 13A, 10V | 2V @ 80μA | 13A Ta | 33.7nC @ 5V | 7.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7520-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/nexperiausainc-buk752055a127-datasheets-5717.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 118W Tc | TO-220AB | 54A | 217A | 0.02Ohm | 115 mJ | N-Channel | 1592pF @ 25V | 20m Ω @ 25A, 10V | 4V @ 1mA | 54A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK7905-40ATE,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk790540ate127-datasheets-5722.pdf | TO-220-5 | 12 Weeks | 5 | Tin | No | Single | 272W | 1 | TO-220-5 | 4.5nF | 35 ns | 115ns | 110 ns | 155 ns | 155A | 20V | 40V | 40V | 272W Tc | 5mOhm | 40V | N-Channel | 4500pF @ 25V | 5mOhm @ 50A, 10V | 4V @ 1mA | 75A Tc | 118nC @ 10V | Temperature Sensing Diode | 5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQA28N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/onsemiconductor-fqa28n50-datasheets-5727.pdf&product=onsemiconductor-fqa28n50-6861002 | 500V | 28.4A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | EAR99 | Tin | No | e3 | Single | 310W | 1 | 100 ns | 290ns | 175 ns | 250 ns | 28.4A | 30V | 500V | SILICON | SWITCHING | 310W Tc | 500V | N-Channel | 5600pF @ 25V | 5 V | 160m Ω @ 14.2A, 10V | 5V @ 250μA | 28.4A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| BUK9506-75B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk950675b127-datasheets-5730.pdf | TO-220-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | NO | 3 | Single | 300W | 1 | FET General Purpose Power | 68 ns | 144ns | 116 ns | 273 ns | 153A | 15V | 75V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 75A | 0.0066Ohm | 852 mJ | 75V | N-Channel | 11693pF @ 25V | 5.5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 95nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| BUK7535-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk753555a127-datasheets-5684.pdf | TO-220-3 | 3 | EAR99 | ESD PROTECTED | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 85W Tc | TO-220AB | 35A | 139A | 0.035Ohm | 49 mJ | N-Channel | 872pF @ 25V | 35m Ω @ 20A, 10V | 4V @ 1mA | 35A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK7507-30B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk750730b127-datasheets-5688.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 157W Tc | TO-220AB | 75A | 435A | 0.007Ohm | 329 mJ | N-Channel | 2427pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDU8782 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdd8782-datasheets-0062.pdf | TO-251-3 Short Leads, IPak, TO-251AA | compliant | NOT SPECIFIED | NOT SPECIFIED | 25V | 50W Tc | N-Channel | 1220pF @ 13V | 11m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHK5NQ15T,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/nexperiausainc-phk5nq15t518-datasheets-5640.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.45mm | 4mm | 8 | 16 Weeks | 8 | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | GULL WING | 260 | 8 | Single | 30 | 6.25W | 1 | FET General Purpose Power | 12 ns | 12ns | 18 ns | 35 ns | 5A | 20V | 150V | SILICON | SWITCHING | 6.25W Tc | MS-012AA | 5A | 0.075Ohm | 150V | N-Channel | 1150pF @ 25V | 75m Ω @ 5A, 10V | 4V @ 1mA | 5A Tc | 29nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BUK7506-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/nexperiausainc-buk750655a127-datasheets-5643.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | NO | 3 | Single | 300W | 1 | FET General Purpose Power | 35 ns | 115ns | 110 ns | 155 ns | 154A | 20V | 55V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 75A | 616A | 1100 mJ | 55V | N-Channel | 6000pF @ 25V | 6.3m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQA48N20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqa48n20-datasheets-5650.pdf | TO-3P-3, SC-65-3 | TO-3P | 200V | 280W Tc | N-Channel | 5000pF @ 25V | 50mOhm @ 24A, 10V | 5V @ 250μA | 48A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9515-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk9515100a127-datasheets-5651.pdf | TO-220-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | NO | 3 | Single | 230W | 1 | FET General Purpose Power | 45 ns | 130ns | 130 ns | 400 ns | 75A | 10V | 100V | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 100V | N-Channel | 8600pF @ 25V | 14.4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQAF11N90 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqaf11n90-datasheets-5653.pdf | TO-3P-3 Full Pack | 3 | yes | EAR99 | compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 120W Tc | 7A | 28A | 1.1Ohm | 960 mJ | N-Channel | 3500pF @ 25V | 960m Ω @ 3.6A, 10V | 5V @ 250μA | 7.2A Tc | 94nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| PHP30NQ15T,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/nexperiausainc-php30nq15t127-datasheets-5654.pdf | TO-220-3 | 3 | 20 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | NO | 3 | Single | 150W | 1 | FET General Purpose Power | 14 ns | 50ns | 38 ns | 48 ns | 29A | 20V | 150V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 116A | 502 mJ | 150V | N-Channel | 2390pF @ 25V | 63m Ω @ 15A, 10V | 4V @ 1mA | 29A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BUK7520-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7520100a127-datasheets-5659.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 200W Tc | TO-220AB | 63A | 253A | 0.02Ohm | 400 mJ | N-Channel | 4373pF @ 25V | 20m Ω @ 25A, 10V | 4V @ 1mA | 63A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PSMN165-200K,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/nexperiausainc-psmn165200k518-datasheets-5662.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 16 Weeks | 8 | EAR99 | No | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | 30 | 3.5W | 1 | FET General Purpose Power | 12 ns | 11ns | 25 ns | 50 ns | 2.9A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.5W Tc | MS-012AA | 0.165Ohm | 200V | N-Channel | 1330pF @ 25V | 165m Ω @ 2.5A, 10V | 4V @ 1mA | 2.9A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSP317PE6327T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp317pe6327-datasheets-5692.pdf | -250V | -430mA | TO-261-4, TO-261AA | Lead Free | 4 | PG-SOT223-4 | 262pF | 11.1ns | 430mA | 250V | 1.8W Ta | P-Channel | 262pF @ 25V | 4Ohm @ 430mA, 10V | 2V @ 370μA | 430mA Ta | 15.1nC @ 10V | 4 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9511-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | /files/nexperiausainc-buk951155a127-datasheets-5668.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 166W Tc | TO-220AB | 75A | 266A | 0.012Ohm | 330 mJ | N-Channel | 4230pF @ 25V | 10m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 4.5V 10V | ±10V |
