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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQAF11N90 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqaf11n90-datasheets-5653.pdf | TO-3P-3 Full Pack | 3 | yes | EAR99 | compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 120W Tc | 7A | 28A | 1.1Ohm | 960 mJ | N-Channel | 3500pF @ 25V | 960m Ω @ 3.6A, 10V | 5V @ 250μA | 7.2A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| PHP30NQ15T,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/nexperiausainc-php30nq15t127-datasheets-5654.pdf | TO-220-3 | 3 | 20 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | NO | 3 | Single | 150W | 1 | FET General Purpose Power | 14 ns | 50ns | 38 ns | 48 ns | 29A | 20V | 150V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 116A | 502 mJ | 150V | N-Channel | 2390pF @ 25V | 63m Ω @ 15A, 10V | 4V @ 1mA | 29A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BUK7520-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7520100a127-datasheets-5659.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 200W Tc | TO-220AB | 63A | 253A | 0.02Ohm | 400 mJ | N-Channel | 4373pF @ 25V | 20m Ω @ 25A, 10V | 4V @ 1mA | 63A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| PSMN165-200K,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/nexperiausainc-psmn165200k518-datasheets-5662.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 16 Weeks | 8 | EAR99 | No | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | 30 | 3.5W | 1 | FET General Purpose Power | 12 ns | 11ns | 25 ns | 50 ns | 2.9A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.5W Tc | MS-012AA | 0.165Ohm | 200V | N-Channel | 1330pF @ 25V | 165m Ω @ 2.5A, 10V | 4V @ 1mA | 2.9A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSP317PE6327T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp317pe6327-datasheets-5692.pdf | -250V | -430mA | TO-261-4, TO-261AA | Lead Free | 4 | PG-SOT223-4 | 262pF | 11.1ns | 430mA | 250V | 1.8W Ta | P-Channel | 262pF @ 25V | 4Ohm @ 430mA, 10V | 2V @ 370μA | 430mA Ta | 15.1nC @ 10V | 4 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9511-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | /files/nexperiausainc-buk951155a127-datasheets-5668.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 166W Tc | TO-220AB | 75A | 266A | 0.012Ohm | 330 mJ | N-Channel | 4230pF @ 25V | 10m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| FQI16N25CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqb16n25ctm-datasheets-4887.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 250V | 3.13W Ta 139W Tc | N-Channel | 1080pF @ 25V | 270mOhm @ 7.8A, 10V | 4V @ 250μA | 15.6A Tc | 53.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP123E6327T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp123l6327htsa1-datasheets-5079.pdf | 100V | 380mA | TO-261-4, TO-261AA | Lead Free | 4 | PG-SOT223-4 | 70pF | 5ns | 370mA | 100V | 1.79W Ta | N-Channel | 70pF @ 25V | 6Ohm @ 370mA, 10V | 1.8V @ 50μA | 370mA Ta | 2.4nC @ 10V | 6 Ω | 2.8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF79N15 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdpf79n15-datasheets-5587.pdf | TO-220-3 Full Pack | TO-220F | 150V | 38W Tc | N-Channel | 3410pF @ 25V | 30mOhm @ 39.5A, 10V | 5V @ 250μA | 79A Tc | 73nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB5N50CFTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/onsemiconductor-fqb5n50cftm-datasheets-5624.pdf | 500V | 5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | No SVHC | 2 | Single | 96W | 46ns | 48 ns | 50 ns | 5A | 30V | 4V | 96W Tc | 500V | N-Channel | 625pF @ 25V | 1.55 Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCB11N60FTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fcb11n60ftm-datasheets-5583.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | FCB11N60 | D2PAK | 600V | 125W Tc | N-Channel | 1490pF @ 25V | 380mOhm @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP88L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp88e6327-datasheets-5159.pdf | TO-261-4, TO-261AA | 4 | No | 1.8W | 1 | PG-SOT223-4 | 95pF | 3.6 ns | 3.5ns | 18.9 ns | 17.9 ns | 350mA | 20V | 240V | 1.7W Ta | N-Channel | 95pF @ 25V | 6Ohm @ 350mA, 10V | 1.4V @ 108μA | 350mA Ta | 6.8nC @ 10V | 6 Ω | 2.8V 4.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP315PE6327T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp315pe6327-datasheets-5075.pdf | -60V | -1.17A | TO-261-4, TO-261AA | Lead Free | 4 | PG-SOT223-4 | 160pF | 9ns | 1.17A | 60V | 1.8W Ta | P-Channel | 160pF @ 25V | 800mOhm @ 1.17A, 10V | 2V @ 160μA | 1.17A Ta | 7.8nC @ 10V | 800 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCD7N60TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | FCD7N60 | D-Pak | 600V | 83W Tc | N-Channel | 920pF @ 25V | 600mOhm @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS350A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 1999 | https://pdf.utmel.com/r/datasheets/onsemiconductor-irfs350a-datasheets-5600.pdf | TO-3P-3 Full Pack | TO-3PF | 400V | 92W Tc | N-Channel | 2780pF @ 25V | 300mOhm @ 5.75A, 10V | 4V @ 250μA | 11.5A Tc | 131nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDI33N25TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdi33n25tu-datasheets-5601.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 250V | 235W Tc | N-Channel | 2135pF @ 25V | 94mOhm @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS192PE6327T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineon-bss192pe6327t-datasheets-8802.pdf | -250V | -190mA | TO-243AA | Lead Free | PG-SOT89 | 104pF | 5.2ns | 190mA | 250V | 1W Ta | P-Channel | 104pF @ 25V | 12Ohm @ 190mA, 10V | 2V @ 130μA | 190mA Ta | 6.1nC @ 10V | 12 Ω | 2.8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NMSD200B01-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | DEPLETION MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-nmsd200b017-datasheets-0326.pdf | 60V | 200mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 6.010099mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 40 | 200mW | 1 | FET General Purpose Power | 20 ns | 40 ns | 200mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200mW Ta | 0.2A | 2Ohm | 5 pF | 60V | N-Channel | 50pF @ 25V | 3 Ω @ 50mA, 5V | 3V @ 1mA | 200mA Ta | Schottky Diode (Isolated) | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| FCU7N60TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 600V | 7A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | No SVHC | 3 | Single | 83W | 55ns | 32 ns | 75 ns | 7A | 30V | 5V | 83W Tc | 600V | N-Channel | 920pF @ 25V | 600m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STY100NS20FD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MESH OVERLAY™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sty100ns20fd-datasheets-5609.pdf | 200V | 100A | TO-247-3 | Lead Free | 3 | 247 | EAR99 | No | STY100 | 3 | Single | 450W | 1 | FET General Purpose Power | R-PSIP-T3 | 42 ns | 140ns | 140 ns | 100A | 20V | SILICON | SWITCHING | 450W Tc | 400A | 0.024Ohm | 750 mJ | 200V | N-Channel | 7900pF @ 25V | 24m Ω @ 50A, 10V | 4V @ 250μA | 100A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDU8770 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/onsemiconductor-fdu8770-datasheets-5614.pdf | TO-251-3 Short Leads, IPak, TO-251AA | compliant | NOT SPECIFIED | NOT SPECIFIED | 25V | 115W Tc | N-Channel | 3720pF @ 13V | 4m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 73nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD5810 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 60V | 35A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | yes | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 88W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 75ns | 34 ns | 26 ns | 37A | 20V | SILICON | DRAIN | SWITCHING | 72W Tc | TO-252AA | 7.4A | 0.022Ohm | 45 mJ | 60V | N-Channel | 1890pF @ 25V | 22m Ω @ 32A, 10V | 2V @ 250μA | 7.4A Ta 37A Tc | 34nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SPD07N60C3T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd07n60c3t-datasheets-5540.pdf | 650V | 7.3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | PG-TO252-3 | 790pF | 3.5ns | 7.3A | 650V | 83W Tc | N-Channel | 790pF @ 25V | 600mOhm @ 4.6A, 10V | 3.9V @ 350μA | 7.3A Tc | 27nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF75345S3S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 55V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 325W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 118ns | 26 ns | 42 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 325W Tc | 0.007Ohm | 55V | N-Channel | 4000pF @ 25V | 7m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 275nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDU8780 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdu8780-datasheets-5502.pdf | 25V | 35A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | NOT SPECIFIED | Single | NOT SPECIFIED | 50W | 1 | 9ns | 24 ns | 43 ns | 35A | 20V | 50W Tc | 25V | N-Channel | 1440pF @ 13V | 8.5m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP295E6327T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp295e6327-datasheets-5163.pdf | 50V | 1.8A | TO-261-4, TO-261AA | Lead Free | 4 | PG-SOT223-4 | 368pF | 20ns | 1.8A | 60V | 1.8W Ta | N-Channel | 368pF @ 25V | 300mOhm @ 1.8A, 10V | 1.8V @ 400μA | 1.8A Ta | 17nC @ 10V | 300 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP316PE6327T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp316pe6327-datasheets-5601.pdf | TO-261-4, TO-261AA | 100V | 1.8W Ta | P-Channel | 146pF @ 25V | 1.8 Ω @ 680mA, 10V | 2V @ 170μA | 680mA Ta | 6.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTD5P06VT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-mtd5p06vt4-datasheets-6398.pdf | -60V | -5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | No SVHC | 340MOhm | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | YES | GULL WING | 260 | 3 | Single | 40 | 40W | 1 | Other Transistors | R-PSSO-G2 | 11 ns | 26ns | 19 ns | 17 ns | 5A | 15V | SILICON | DRAIN | SWITCHING | 60V | 2.8V | 2.1W Ta 40W Tc | 5A | -60V | P-Channel | 510pF @ 25V | 450m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 20nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||
| SPD04N50C3T | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd04n50c3t-datasheets-5525.pdf | 560V | 4.5A | TO-252-3 | Lead Free | 3 | 50W | 470pF | 4.5A | 560V | 950 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF10N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqaf10n80-datasheets-5529.pdf | TO-3P-3 Full Pack | TO-3PF | 800V | 113W Tc | N-Channel | 2700pF @ 25V | 1.05Ohm @ 3.35A, 10V | 5V @ 250μA | 6.7A Tc | 71nC @ 10V | 10V | ±30V |
