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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK7508-40B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk750840b127-datasheets-5833.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 157W Tc | TO-220AB | 75A | 407A | 0.008Ohm | 241 mJ | N-Channel | 2689pF @ 25V | 8m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PSMN003-30P,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nexperia-psmn00330p127-datasheets-8971.pdf | TO-220-3 | Lead Free | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | 8541.29.00.75 | e3 | Tin (Sn) | 3 | Single | 230W | 1 | FET General Purpose Power | 33 ns | 66ns | 115 ns | 210 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 400A | 0.004Ohm | 500 mJ | 30V | N-Channel | 9200pF @ 25V | 2.8m Ω @ 25A, 10V | 3V @ 1mA | 75A Tc | 170nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTV22N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq22n60p-datasheets-0455.pdf | 600V | 22A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 20ns | 23 ns | 60 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 66A | 1000 mJ | 600V | N-Channel | 3600pF @ 25V | 350m Ω @ 11A, 10V | 5.5V @ 250μA | 22A Tc | 62nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTY1R4N60P | IXYS | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r4n60p-datasheets-5843.pdf | 600V | 1.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 50W | 1 | R-PSSO-G2 | 16ns | 16 ns | 25 ns | 1.4A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 50W Tc | TO-252AA | 9Ohm | 75 mJ | 600V | N-Channel | 140pF @ 25V | 9 Ω @ 700mA, 10V | 5.5V @ 25μA | 1.4A Tc | 5.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFV36N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh36n50p-datasheets-4795.pdf | 500V | 36A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 90A | 0.17Ohm | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 170m Ω @ 500mA, 10V | 5V @ 4mA | 36A Tc | 93nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTI12N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp12n50p-datasheets-2268.pdf | 500V | 12A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | 27ns | 20 ns | 55 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | 0.5Ohm | 600 mJ | 500V | N-Channel | 1830pF @ 25V | 500m Ω @ 6A, 10V | 5.5V @ 250μA | 12A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| BUK9540-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2000 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk9540100a127-datasheets-5810.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 158W Tc | TO-220AB | 39A | 159A | 0.043Ohm | 182 mJ | N-Channel | 3072pF @ 25V | 39m Ω @ 25A, 10V | 2V @ 1mA | 39A Tc | 48nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||
| IXTV22N50PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq22n50p-datasheets-2023.pdf | 500V | 22A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | 50A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 250μA | 22A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTV36N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth36n50p-datasheets-5556.pdf | 500V | 36A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 108A | 0.17Ohm | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 170m Ω @ 500mA, 10V | 5V @ 250μA | 36A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| BUK954R2-55B,127 | Nexperia USA Inc. | $4.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk954r255b127-datasheets-5818.pdf | TO-220-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | NO | 3 | Single | 300W | 1 | FET General Purpose Power | 63 ns | 232ns | 178 ns | 273 ns | 191A | 15V | 55V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 75A | 765A | 0.0044Ohm | 55V | N-Channel | 10220pF @ 25V | 3.7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 95nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||
| IXTP3N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n50p-datasheets-5773.pdf | 500V | 3A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | 15ns | 12 ns | 38 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-220AB | 8A | 2Ohm | 180 mJ | 500V | N-Channel | 409pF @ 25V | 2 Ω @ 1.8A, 10V | 5.5V @ 50μA | 3.6A Tc | 9.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTP8N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp8n50p-datasheets-5784.pdf | 500V | 8A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 28ns | 23 ns | 65 ns | 8A | 30V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 8A | 14A | 0.8Ohm | 400 mJ | 500V | N-Channel | 1050pF @ 25V | 800m Ω @ 4A, 10V | 5.5V @ 100μA | 8A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| PH955L,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2009 | https://pdf.utmel.com/r/datasheets/nexperiausainc-ph955l115-datasheets-5786.pdf | SC-100, SOT-669 | 4 | 20 Weeks | EAR99 | LOGIC LEVEL | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 62.5W Tc | MO-235 | 62.5A | 187A | 0.0083Ohm | 195 mJ | N-Channel | 2836pF @ 25V | 8.3m Ω @ 25A, 10V | 2V @ 1mA | 62.5A Tc | 42nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BUK754R0-55B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk754r055b127-datasheets-5790.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | NO | 3 | Single | 300W | 1 | FET General Purpose Power | 23 ns | 51ns | 41 ns | 71 ns | 193A | 20V | 55V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 75A | 774A | 0.004Ohm | 1200 mJ | 55V | N-Channel | 6776pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BUK9230-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk923055a118-datasheets-5795.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 88W Tc | 38A | 154A | 0.033Ohm | 57.8 mJ | N-Channel | 1725pF @ 25V | 27m Ω @ 15A, 10V | 2V @ 1mA | 38A Tc | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||
| BUK9575-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/nexperiausainc-buk957555a127-datasheets-5798.pdf | TO-220-3 | 6.35mm | 6.35mm | 6.35mm | 3 | 4.535924g | 3 | EAR99 | Tin | No | e3 | NO | 3 | Single | 62W | 1 | FET General Purpose Power | 10 ns | 47ns | 33 ns | 28 ns | 20A | 10V | 55V | SILICON | DRAIN | SWITCHING | 62W Tc | TO-220AB | 72 mJ | 55V | N-Channel | 643pF @ 25V | 68m Ω @ 10A, 10V | 2V @ 1mA | 20A Tc | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||
| IXTP1R6N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r6n50p-datasheets-5758.pdf | 500V | 1A | TO-220-3 | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 43W | 1 | Not Qualified | 26ns | 23 ns | 45 ns | 1.6A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 43W Tc | TO-220AB | 2.5A | 75 mJ | 500V | N-Channel | 140pF @ 25V | 6.5 Ω @ 500mA, 10V | 5.5V @ 25μA | 1.6A Tc | 3.9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTV26N50PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt26n50p-datasheets-3884.pdf | 500V | 26A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 78A | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 250μA | 26A Tc | 65nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTV22N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq22n50p-datasheets-2023.pdf | 500V | 22A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | 27ns | 21 ns | 75 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | 50A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 250μA | 22A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTY2R4N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty2r4n50p-datasheets-5764.pdf | 500V | 2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 55W | 1 | Not Qualified | R-PSSO-G2 | 29ns | 28 ns | 65 ns | 2.4A | 30V | SILICON | DRAIN | SWITCHING | 55W Tc | TO-252AA | 4.5A | 100 mJ | 500V | N-Channel | 240pF @ 25V | 3.75 Ω @ 500mA, 10V | 5.5V @ 25μA | 2.4A Tc | 6.1nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| BUK7575-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/nexperiausainc-buk757555a127-datasheets-5766.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | NO | 3 | Single | 62W | 1 | FET General Purpose Power | 10 ns | 50ns | 40 ns | 70 ns | 20.3A | 20V | 55V | SILICON | DRAIN | SWITCHING | 62W Tc | TO-220AB | 81A | 0.075Ohm | 55V | N-Channel | 483pF @ 25V | 75m Ω @ 10A, 10V | 4V @ 1mA | 20.3A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FQB12N60CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | /files/onsemiconductor-fqi12n60ctu-datasheets-5290.pdf | 600V | 12A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | Single | 225W | D2PAK (TO-263AB) | 2.29nF | 85ns | 90 ns | 155 ns | 12A | 30V | 600V | 3.13W Ta 225W Tc | 650mOhm | 600V | N-Channel | 2290pF @ 25V | 650mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 63nC @ 10V | 650 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTY3N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n50p-datasheets-5773.pdf | 500V | 3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 15ns | 12 ns | 38 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-252AA | 8A | 2Ohm | 180 mJ | 500V | N-Channel | 409pF @ 25V | 2 Ω @ 1.8A, 10V | 5.5V @ 50μA | 3.6A Tc | 9.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTC26N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtc26n50p-datasheets-5775.pdf | 500V | 26A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | 25ns | 20 ns | 58 ns | 15A | 30V | SILICON | ISOLATED | SWITCHING | 130W Tc | 78A | 0.26Ohm | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 260m Ω @ 13A, 10V | 5.5V @ 250μA | 15A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| BUK7905-40AI,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/nexperiausainc-buk790540ai127-datasheets-5777.pdf | TO-220-5 | 5 | 12 Weeks | 5 | EAR99 | Tin | No | e3 | NO | 5 | Single | 272W | 1 | 35 ns | 115ns | 110 ns | 155 ns | 155A | 20V | 40V | SILICON | DRAIN | SWITCHING | 272W Tc | 620A | 40V | N-Channel | 5000pF @ 25V | 5m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 127nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUK9107-55ATE,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2002 | /files/nexperiausainc-buk910755ate118-datasheets-5780.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | 4 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 272W Tc | 75A | 560A | 0.0077Ohm | 500 mJ | N-Channel | 5836pF @ 25V | 6.2m Ω @ 50A, 10V | 2V @ 1mA | 75A Tc | 108nC @ 5V | Temperature Sensing Diode | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| BUK7575-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk7675100a118-datasheets-1584.pdf | TO-220-3 | 6.35mm | 6.35mm | 6.35mm | 3 | 4.535924g | 3 | EAR99 | Tin | No | e3 | 3 | Single | 99W | 1 | FET General Purpose Power | 8 ns | 39ns | 24 ns | 26 ns | 200mA | 20V | 100V | SILICON | DRAIN | SWITCHING | 99W Tc | TO-220AB | 92A | 0.075Ohm | 100V | N-Channel | 1210pF @ 25V | 75m Ω @ 13A, 10V | 4V @ 1mA | 23A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BUK7516-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk751655a127-datasheets-5740.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | 3 | Single | 138W | 1 | FET General Purpose Power | 16 ns | 70ns | 41 ns | 57 ns | 3.8A | 20V | 55V | SILICON | DRAIN | SWITCHING | 138W Tc | TO-220AB | 65.7A | 0.016Ohm | 120 mJ | 55V | N-Channel | 2245pF @ 25V | 16m Ω @ 25A, 10V | 4V @ 1mA | 65.7A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BUK7528-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | /files/nexperiausainc-buk752855a127-datasheets-5742.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 99W Tc | TO-220AB | 42A | 168A | 0.028Ohm | 58 mJ | N-Channel | 1165pF @ 25V | 28m Ω @ 25A, 10V | 4V @ 1mA | 42A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BUK7526-100B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2014 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7526100b127-datasheets-5746.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 157W Tc | TO-220AB | 49A | 197A | 0.026Ohm | 144 mJ | N-Channel | 2891pF @ 25V | 26m Ω @ 25A, 10V | 4V @ 1mA | 49A Tc | 38nC @ 10V | 10V | ±20V |
