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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPSH5N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdh5n03lag-datasheets-0847.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 83W Tc | 50A | 350A | 0.0054Ohm | 225 mJ | N-Channel | 2653pF @ 15V | 5.4m Ω @ 50A, 10V | 2V @ 35μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||
| IPSH6N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdh6n03lag-datasheets-7964.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 71W Tc | TO-251AA | 50A | 350A | 0.0062Ohm | 150 mJ | N-Channel | 2390pF @ 15V | 6.2m Ω @ 50A, 10V | 2V @ 30μA | 50A Tc | 19nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||
| IPS13N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf13n03lag-datasheets-2614.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 46W Tc | 30A | 210A | 0.0128Ohm | 60 mJ | N-Channel | 1043pF @ 15V | 12.8m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 8.3nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||
| IPS20N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | 2009 | TO-251-3 Stub Leads, IPak | 30V | N-Channel | 30A Ta | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU04N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd04n03lbg-datasheets-0061.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 115W Tc | 50A | 200A | 0.006Ohm | 430 mJ | N-Channel | 5200pF @ 15V | 4.3m Ω @ 50A, 10V | 2V @ 70μA | 50A Tc | 40nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||
| IPS09N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips09n03lbg-datasheets-1250.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 58W Tc | TO-251AA | 50A | 200A | 0.0144Ohm | 57 mJ | N-Channel | 1600pF @ 15V | 9.3m Ω @ 50A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||
| IPSH4N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdh4n03lag-datasheets-9767.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 94W Tc | 90A | 360A | 0.0044Ohm | 150 mJ | N-Channel | 3200pF @ 15V | 4.4m Ω @ 60A, 10V | 2V @ 40μA | 90A Tc | 26nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||
| IPS06N03LZ G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips06n03lzg-datasheets-1258.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 83W Tc | 50A | 350A | 0.0095Ohm | 225 mJ | N-Channel | 2653pF @ 15V | 5.9m Ω @ 30A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||
| IPS03N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips03n03lbg-datasheets-1262.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 115W Tc | 90A | 360A | 0.0051Ohm | 240 mJ | N-Channel | 5200pF @ 15V | 3.5m Ω @ 60A, 10V | 2V @ 70μA | 90A Tc | 40nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||
| IPP26CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp26cne8ng-datasheets-1266.pdf | TO-220-3 | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 85V | 85V | 71W Tc | TO-220AB | 35A | 140A | 0.026Ohm | 65 mJ | N-Channel | 2070pF @ 40V | 26m Ω @ 35A, 10V | 4V @ 39μA | 35A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||
| IPS10N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf10n03lag-datasheets-0865.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 52W Tc | TO-251AA | 30A | 210A | 0.0104Ohm | 80 mJ | N-Channel | 1358pF @ 15V | 10.4m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||
| IPP12CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp12cn10ng-datasheets-1275.pdf | TO-220-3 | 3 | EAR99 | FAST SWITCHING | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 125W Tc | TO-220AB | 67A | 268A | 0.0129Ohm | 154 mJ | N-Channel | 4320pF @ 50V | 12.9m Ω @ 67A, 10V | 4V @ 83μA | 67A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||
| IPS05N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips05n03lbg-datasheets-1279.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 94W Tc | 90A | 420A | 0.005Ohm | 120 mJ | N-Channel | 3200pF @ 15V | 5m Ω @ 60A, 10V | 2V @ 40μA | 90A Tc | 25nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||
| IPS05N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf05n03lag-datasheets-5680.pdf | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 25V | 94W Tc | N-Channel | 3110pF @ 15V | 5.3mOhm @ 30A, 10V | 2V @ 50μA | 50A Tc | 25nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPP120N06NGAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp120n06ngaksa1-datasheets-1226.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | Not Qualified | 75A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 158W Tc | TO-220AB | 0.012Ohm | 280 mJ | N-Channel | 2100pF @ 30V | 12m Ω @ 75A, 10V | 4V @ 94μA | 75A Tc | 62nC @ 10V | 10V | ±20V | |||||||||||||||||||
| IPP100N06S3L-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb100n06s3l03-datasheets-7862.pdf | 55V | 100A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 70ns | 77 ns | 110 ns | 100A | 16V | SILICON | SWITCHING | 300W Tc | TO-220AB | 400A | 0.0046Ohm | 690 mJ | 55V | N-Channel | 26240pF @ 25V | 3m Ω @ 80A, 10V | 2.2V @ 230μA | 100A Tc | 550nC @ 10V | 5V 10V | ±16V | |||||||||||||
| IPP12CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp12cne8ng-datasheets-1234.pdf | TO-220-3 | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 85V | 85V | 125W Tc | TO-220AB | 67A | 268A | 0.0129Ohm | 154 mJ | N-Channel | 4340pF @ 40V | 12.9m Ω @ 67A, 10V | 4V @ 83μA | 67A Tc | 64nC @ 10V | 10V | ±20V | |||||||||||||||||||
| IPU04N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd04n03lag-datasheets-5751.pdf | 25V | 50A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 115W Tc | 0.0059Ohm | 600 mJ | N-Channel | 5199pF @ 15V | 4m Ω @ 50A, 10V | 2V @ 80μA | 50A Tc | 41nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||
| IPP080N06N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb080n06ng-datasheets-5038.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 214W Tc | TO-220AB | 80A | 320A | 0.008Ohm | 448 mJ | N-Channel | 3500pF @ 30V | 8m Ω @ 80A, 10V | 4V @ 150μA | 80A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||
| IPP100N06S3L-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi100n06s3l04xk-datasheets-5374.pdf | 55V | 100A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 214W | 1 | FET General Purpose Power | Not Qualified | 58ns | 55 ns | 82 ns | 100A | 16V | SILICON | 214W Tc | TO-220AB | 400A | 0.0062Ohm | 450 mJ | 55V | N-Channel | 17270pF @ 25V | 3.8m Ω @ 80A, 10V | 2.2V @ 150μA | 100A Tc | 362nC @ 10V | 5V 10V | ±16V | ||||||||||||||
| IPP048N06L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp048n06lg-datasheets-1185.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 300W Tc | TO-220AB | 100A | 400A | 0.0047Ohm | 810 mJ | N-Channel | 7600pF @ 30V | 4.7m Ω @ 100A, 10V | 2V @ 270μA | 100A Tc | 225nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||
| IPP80CN10NGHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80cn10nghksa1-datasheets-1189.pdf | TO-220-3 | 3 | EAR99 | compliant | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 31W Tc | TO-220AB | 13A | 52A | 0.08Ohm | 17 mJ | N-Channel | 716pF @ 50V | 80m Ω @ 13A, 10V | 4V @ 12μA | 13A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IPP45N06S3-16 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi45n06s316-datasheets-1056.pdf | 55V | 45A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 65W | 1 | FET General Purpose Power | Not Qualified | 61ns | 68 ns | 26 ns | 45A | 20V | SILICON | 65W Tc | TO-220AB | 95 mJ | 55V | N-Channel | 2980pF @ 25V | 15.7m Ω @ 23A, 10V | 4V @ 30μA | 45A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||
| IPP80N06S3L-06 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80n06s3l06-datasheets-1198.pdf | 55V | 80A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 136W | 1 | FET General Purpose Power | Not Qualified | 43ns | 39 ns | 55 ns | 80A | 16V | SILICON | SWITCHING | 136W Tc | TO-220AB | 0.0059Ohm | 250 mJ | 55V | N-Channel | 9417pF @ 25V | 5.9m Ω @ 56A, 10V | 2.2V @ 80μA | 80A Tc | 196nC @ 10V | 5V 10V | ±16V | ||||||||||||||
| IPP10N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp10n03lbg-datasheets-1202.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 58W Tc | TO-220AB | 50A | 200A | 0.0099Ohm | 57 mJ | N-Channel | 1639pF @ 15V | 9.9m Ω @ 50A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||
| IPS04N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd04n03lbg-datasheets-0061.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 115W Tc | 50A | 200A | 0.006Ohm | 430 mJ | N-Channel | 5200pF @ 15V | 4.3m Ω @ 50A, 10V | 2V @ 70μA | 50A Tc | 40nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||
| IPP100N06S3-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi100n06s303-datasheets-1041.pdf | 55V | 100A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 67ns | 60 ns | 77 ns | 100A | 20V | SILICON | 300W Tc | TO-220AB | 400A | 55V | N-Channel | 21620pF @ 25V | 3.3m Ω @ 80A, 10V | 4V @ 230μA | 100A Tc | 480nC @ 10V | 10V | ±20V | ||||||||||||||||
| IPP070N06N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp070n06ng-datasheets-1215.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 250W Tc | TO-220AB | 80A | 320A | 0.007Ohm | 530 mJ | N-Channel | 4100pF @ 30V | 7m Ω @ 80A, 10V | 4V @ 180μA | 80A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||
| IPS04N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd04n03lag-datasheets-5751.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 115W Tc | TO-251AA | 50A | 350A | 0.0059Ohm | 600 mJ | N-Channel | 5199pF @ 15V | 4m Ω @ 50A, 10V | 2V @ 80μA | 50A Tc | 41nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||
| IPP08CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp08cne8ng-datasheets-1165.pdf | TO-220-3 | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 85V | 85V | 167W Tc | TO-220AB | 95A | 380A | 262 mJ | N-Channel | 6690pF @ 40V | 6.4m Ω @ 95A, 10V | 4V @ 130μA | 95A Tc | 99nC @ 10V | 10V | ±20V |
