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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SPN02N60S5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spn02n60s5-datasheets-1712.pdf | 600V | 400mA | TO-261-4, TO-261AA | Contains Lead | 4 | EAR99 | HIGH VOLTAGE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1.8W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 15ns | 15 ns | 110 ns | 400mA | 3.5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8W Ta | 0.4A | 2.2A | 3Ohm | 50 mJ | 600V | N-Channel | 250pF @ 25V | 3 Ω @ 1.1A, 10V | 5.5V @ 80μA | 400mA Ta | 7.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SPI12N50C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa12n50c3xksa1-datasheets-5545.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 8 Weeks | PG-TO262-3-1 | 560V | 125W Tc | N-Channel | 1200pF @ 25V | 380mOhm @ 7A, 10V | 3.9V @ 500μA | 11.6A Tc | 49nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPI80N03S2-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n03s203gatma1-datasheets-1455.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED | compliant | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 300W Tc | 80A | 320A | 0.0034Ohm | 810 mJ | N-Channel | 7020pF @ 25V | 3.4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SPD50N03S2-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd50n03s207-datasheets-1653.pdf | 30V | 50A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | Single | NOT SPECIFIED | 136W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 36ns | 25 ns | 27 ns | 50A | 20V | SILICON | DRAIN | 136W Tc | 200A | 0.0073Ohm | 250 mJ | 30V | N-Channel | 2170pF @ 25V | 7.3m Ω @ 50A, 10V | 4V @ 85μA | 50A Tc | 46.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SPI10N10 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi10n10-datasheets-1663.pdf | 100V | 10.3A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 10.3A | SILICON | SINGLE WITH BUILT-IN DIODE | 50W Tc | TO-220AB | 41.2A | 0.17Ohm | 60 mJ | N-Channel | 426pF @ 25V | 170m Ω @ 7.8A, 10V | 4V @ 21μA | 10.3A Tc | 19.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SPD30N06S2-15 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd30n06s215-datasheets-1667.pdf | 55V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | AVALANCHE RATED | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 136W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | 240 mJ | N-Channel | 2070pF @ 25V | 14.7m Ω @ 30A, 10V | 4V @ 80μA | 30A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPI10N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi10n10l-datasheets-1671.pdf | 100V | 10.3A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 19.1ns | 17.8 ns | 27.8 ns | 10.3A | 20V | SILICON | SWITCHING | 50W Tc | 42.2A | 0.21Ohm | 60 mJ | 100V | N-Channel | 444pF @ 25V | 154m Ω @ 8.1A, 10V | 2V @ 21μA | 10.3A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPB80N06S2L-H5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2lh5-datasheets-1613.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 320A | 0.0065Ohm | 700 mJ | N-Channel | 6640pF @ 25V | 5m Ω @ 80A, 10V | 2V @ 230μA | 80A Tc | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SPB80N06S2L-09 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2l09-datasheets-1617.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 190W Tc | 320A | 0.0113Ohm | 370 mJ | N-Channel | 3480pF @ 25V | 8.5m Ω @ 52A, 10V | 2V @ 125μA | 80A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPD50N06S2L-13 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd50n06s2l13-datasheets-1621.pdf | 55V | 50A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 136W Tc | 200A | 0.0167Ohm | 240 mJ | N-Channel | 2300pF @ 25V | 12.7m Ω @ 34A, 10V | 2V @ 80μA | 50A Tc | 69nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPI07N65C3HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spi07n65c3hksa1-datasheets-1625.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 650V | 650V | 83W Tc | 7.3A | 21.9A | 0.0006Ohm | 230 mJ | N-Channel | 790pF @ 25V | 600m Ω @ 4.6A, 10V | 3.9V @ 350μA | 7.3A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD30N06S2-23 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | 55V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | 100W | SINGLE | GULL WING | 4 | 175°C | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 120A | 0.023Ohm | 150 mJ | N-Channel | 1250pF @ 25V | 23m Ω @ 21A, 10V | 4V @ 50μA | 30A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP26CN10NGHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp26cn10nghksa1-datasheets-1633.pdf | TO-220-3 | 3 | EAR99 | compliant | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 71W Tc | TO-220AB | 35A | 140A | 0.026Ohm | 65 mJ | N-Channel | 2070pF @ 50V | 26m Ω @ 35A, 10V | 4V @ 39μA | 35A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SPI08N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-spi08n80c3xksa1-datasheets-1638.pdf | 800V | 8A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 3 | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 104W | 1 | Not Qualified | 25 ns | 15ns | 7 ns | 65 ns | 8A | 20V | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 104W Tc | 8A | 24A | 0.65Ohm | N-Channel | 1100pF @ 100V | 650m Ω @ 5.1A, 10V | 3.9V @ 470μA | 8A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SPB80N03S2-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/infineontechnologies-spb80n03s203gatma1-datasheets-1455.pdf | 30V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 220 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 320A | 0.0031Ohm | 810 mJ | N-Channel | 7020pF @ 25V | 3.1m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SPD08P06P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | -60V | -8.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.5mm | 2.3mm | 6.22mm | Lead Free | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 42W | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 16 ns | 48 ns | 8.83A | 20V | -60V | DRAIN | 60V | 42W Tc | TO-252AA | 70 mJ | P-Channel | 420pF @ 25V | 20 V | 300m Ω @ 6.2A, 10V | 4V @ 250μA | 8.83A Ta | 13nC @ 10V | |||||||||||||||||||||||||||||||||
| SPD30N08S2-22 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd30n08s222-datasheets-1649.pdf | 75V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | 120A | 0.0215Ohm | 240 mJ | N-Channel | 1950pF @ 25V | 21.5m Ω @ 25A, 10V | 4V @ 80μA | 30A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SPD15N06S2L-64 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd15n06s2l64-datasheets-1587.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | TIN LEAD | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 47W Tc | 19A | 76A | 0.085Ohm | 43 mJ | N-Channel | 445pF @ 25V | 64m Ω @ 8A, 10V | 2V @ 14μA | 19A Tc | 13nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPD26N06S2L-35 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd26n06s2l35-datasheets-1591.pdf | 55V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 68W Tc | 26A | 120A | 0.047Ohm | 80 mJ | N-Channel | 790pF @ 25V | 35m Ω @ 13A, 10V | 2V @ 26μA | 30A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPD30N06S2L-13 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd30n06s2l13-datasheets-1595.pdf | 55V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 30A | unknown | e0 | Tin/Lead (Sn/Pb) | 55V | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 136W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 136W Tc | 240 mJ | N-Channel | 2300pF @ 25V | 13m Ω @ 30A, 10V | 2V @ 80μA | 30A Tc | 69nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPD25N06S2-40 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd25n06s240-datasheets-1599.pdf | 55V | 29A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 29A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W Tc | 25A | 116A | 0.04Ohm | 80 mJ | N-Channel | 710pF @ 25V | 40m Ω @ 13A, 10V | 4V @ 26μA | 29A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SPB80N04S2-H4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n04s2h4-datasheets-1603.pdf | 40V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 320A | 0.004Ohm | 660 mJ | N-Channel | 5890pF @ 25V | 4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 148nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPI08N50C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp08n50c3xksa1-datasheets-5576.pdf | 560V | 7.6A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10mm | 9.25mm | 4.4mm | Lead Free | 8 Weeks | No SVHC | 3 | Halogen Free | Single | 83W | PG-TO262-3-1 | 750pF | 6 ns | 5ns | 7 ns | 60 ns | 7.6A | 20V | 500V | 560V | 3V | 83W Tc | 600mOhm | 560V | N-Channel | 750pF @ 25V | 600mOhm @ 4.6A, 10V | 3.9V @ 350μA | 7.6A Tc | 32nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPU20N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd20n03l-datasheets-0912.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 30V | 60W Tc | N-Channel | 700pF @ 25V | 20m Ω @ 15A, 10V | 2V @ 25μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB80N03S2L-06 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp80n03s2l06-datasheets-5469.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 30V | 150W Tc | N-Channel | 2530pF @ 25V | 5.9mOhm @ 80A, 10V | 2V @ 80μA | 80A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB80N06S2L-06 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2l06-datasheets-1559.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 320A | 0.0084Ohm | 530 mJ | N-Channel | 5050pF @ 25V | 6.3m Ω @ 69A, 10V | 2V @ 180μA | 80A Tc | 150nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPF06N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu06n03lagxk-datasheets-6263.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 83W Tc | 50A | 350A | 0.0094Ohm | 225 mJ | N-Channel | 2653pF @ 15V | 5.7m Ω @ 30A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPB100N03S2L-03 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 300W Tc | N-Channel | 8180pF @ 25V | 2.7m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD30N08S2L-21 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd30n08s2l21-datasheets-1570.pdf | 75V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 136W Tc | 120A | 0.026Ohm | 240 mJ | N-Channel | 2130pF @ 25V | 20.5m Ω @ 25A, 10V | 2V @ 80μA | 30A Tc | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SPI07N60S5HKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp07n60s5xksa1-datasheets-3550.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | EAR99 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 600V | 600V | 83W Tc | 7.3A | 14.6A | 0.6Ohm | 230 mJ | N-Channel | 970pF @ 25V | 600m Ω @ 4.6A, 10V | 5.5V @ 350μA | 7.3A Tc | 35nC @ 10V | 10V | ±20V |
