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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPS04N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd04n03lag-datasheets-5751.pdf | TO-251-3 Stub Leads, IPak | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 115W Tc | TO-251AA | 50A | 350A | 0.0059Ohm | 600 mJ | N-Channel | 5199pF @ 15V | 4m Ω @ 50A, 10V | 2V @ 80μA | 50A Tc | 41nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPP08CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp08cne8ng-datasheets-1165.pdf | TO-220-3 | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 85V | 85V | 167W Tc | TO-220AB | 95A | 380A | 262 mJ | N-Channel | 6690pF @ 40V | 6.4m Ω @ 95A, 10V | 4V @ 130μA | 95A Tc | 99nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPP08CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp08cn10ng-datasheets-1096.pdf | TO-220-3 | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 167W Tc | TO-220AB | 95A | 380A | 0.0085Ohm | 262 mJ | N-Channel | 6660pF @ 50V | 8.5m Ω @ 95A, 10V | 4V @ 130μA | 95A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPP05N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp05n03lbg-datasheets-1100.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 94W Tc | TO-220AB | 80A | 320A | 0.0053Ohm | 136 mJ | N-Channel | 3209pF @ 15V | 5.3m Ω @ 60A, 10V | 2V @ 40μA | 80A Tc | 25nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPI80N06S3-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s307-datasheets-1105.pdf | 55V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | 260 | 3 | Single | 40 | 135W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 41ns | 33 ns | 34 ns | 80A | 20V | SILICON | 135W Tc | 0.0068Ohm | 55V | N-Channel | 7768pF @ 25V | 6.8m Ω @ 51A, 10V | 4V @ 80μA | 80A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IPI80N06S3-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s305-datasheets-1109.pdf | 55V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | e3 | MATTE TIN | 260 | 3 | Single | 40 | 165W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 50ns | 47 ns | 46 ns | 80A | 20V | SILICON | 165W Tc | 320A | 0.0054Ohm | 345 mJ | 55V | N-Channel | 10760pF @ 25V | 5.4m Ω @ 63A, 10V | 4V @ 110μA | 80A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IPP11N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi11n03la-datasheets-1060.pdf | 25V | 30A | TO-220-3 | Lead Free | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 52W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 43ns | 2.8 ns | 20 ns | 30A | 20V | SILICON | SWITCHING | 52W Tc | TO-220AB | 210A | 0.0115Ohm | 80 mJ | 25V | N-Channel | 1358pF @ 15V | 11.5m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| IPP16CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp16cne8ng-datasheets-1118.pdf | TO-220-3 | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 85V | 85V | 100W Tc | TO-220AB | 53A | 212A | 0.0165Ohm | 107 mJ | N-Channel | 3230pF @ 40V | 16.5m Ω @ 53A, 10V | 4V @ 61μA | 53A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF530NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf530nstrlpbf-datasheets-3873.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 70W Tc | 17A | 60A | 0.09Ohm | 93 mJ | N-Channel | 920pF @ 25V | 90m Ω @ 9A, 10V | 4V @ 250μA | 17A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPP80N06S3L-08 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s3l08-datasheets-0998.pdf | 55V | 80A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 105W | 1 | FET General Purpose Power | Not Qualified | 35ns | 25 ns | 39 ns | 80A | 16V | SILICON | SWITCHING | 105W Tc | TO-220AB | 0.0079Ohm | 55V | N-Channel | 6475pF @ 25V | 7.9m Ω @ 43A, 10V | 2.2V @ 55μA | 80A Tc | 134nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||||
| IPP80N06S3L-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s3l05-datasheets-1085.pdf | 55V | 80A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 165W | 1 | FET General Purpose Power | Not Qualified | 49ns | 41 ns | 65 ns | 80A | 16V | SILICON | SWITCHING | 165W Tc | TO-220AB | 0.008Ohm | 55V | N-Channel | 13060pF @ 25V | 4.8m Ω @ 69A, 10V | 2.2V @ 115μA | 80A Tc | 273nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||||
| IPP04N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp04n03lbg-datasheets-1141.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 107W Tc | TO-220AB | 80A | 320A | 0.0054Ohm | 270 mJ | N-Channel | 5203pF @ 15V | 3.8m Ω @ 55A, 10V | 2V @ 70μA | 80A Tc | 40nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPP80N06S3-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s305-datasheets-1109.pdf | 55V | 80A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 165W | 1 | FET General Purpose Power | Not Qualified | 50ns | 47 ns | 46 ns | 80A | 20V | SILICON | 165W Tc | TO-220AB | 0.0054Ohm | 55V | N-Channel | 10760pF @ 25V | 5.4m Ω @ 63A, 10V | 4V @ 110μA | 80A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IPP21N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | 2009 | TO-220-3 | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S3-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s307-datasheets-1105.pdf | 55V | 80A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 135W | 1 | FET General Purpose Power | Not Qualified | 41ns | 33 ns | 34 ns | 80A | 20V | SILICON | 135W Tc | TO-220AB | 0.0068Ohm | 55V | N-Channel | 7768pF @ 25V | 6.8m Ω @ 51A, 10V | 4V @ 80μA | 80A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IPP77N06S3-09 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi77n06s309-datasheets-1002.pdf | 55V | 77A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 107W | 1 | FET General Purpose Power | Not Qualified | 51ns | 51 ns | 29 ns | 77A | 20V | SILICON | SWITCHING | 107W Tc | TO-220AB | 55V | N-Channel | 5335pF @ 25V | 9.1m Ω @ 39A, 10V | 4V @ 55μA | 77A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IPP25N06S3L-22 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi25n06s3l22-datasheets-1052.pdf | 55V | 25A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | 260 | 3 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | 26ns | 43 ns | 30 ns | 25A | 16V | SILICON | 50W Tc | TO-220AB | 100A | 0.0216Ohm | 120 mJ | 55V | N-Channel | 2260pF @ 25V | 21.6m Ω @ 17A, 10V | 2.2V @ 20μA | 25A Tc | 47nC @ 10V | 5V 10V | ±16V | |||||||||||||||||||||||||||
| IPP03N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp03n03lbg-datasheets-1013.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 150W Tc | TO-220AB | 80A | 320A | 0.0042Ohm | 580 mJ | N-Channel | 7624pF @ 15V | 3.1m Ω @ 55A, 10V | 2V @ 100μA | 80A Tc | 59nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPP054NE8NGHKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp054ne8nghksa2-datasheets-1018.pdf | TO-220-3 | 3 | EAR99 | compliant | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 85V | 85V | 300W Tc | TO-220AB | 100A | 400A | 0.0054Ohm | 826 mJ | N-Channel | 12100pF @ 40V | 5.4m Ω @ 100A, 10V | 4V @ 250μA | 100A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPI100N06S3-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi100n06s304-datasheets-1023.pdf | 55V | 100A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | e3 | MATTE TIN | 260 | 3 | Single | 40 | 214W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 62ns | 62 ns | 62 ns | 100A | 20V | SILICON | 214W Tc | 400A | 0.0044Ohm | 450 mJ | 55V | N-Channel | 14230pF @ 25V | 4.4m Ω @ 80A, 10V | 4V @ 150μA | 100A Tc | 314nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IRF3205ZSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/infineontechnologies-irf3205zstrlpbf-datasheets-3665.pdf | 55V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 6.5MOhm | 3 | No | 170W | 1 | D2PAK | 3.45nF | 18 ns | 95ns | 67 ns | 45 ns | 75A | 20V | 55V | 170W Tc | 6.5mOhm | 55V | N-Channel | 3450pF @ 25V | 6.5mOhm @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 6.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||
| IPI100N06S3-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi100n06s303-datasheets-1041.pdf | 55V | 100A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | 260 | 3 | Single | 40 | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 67ns | 60 ns | 77 ns | 100A | 20V | SILICON | 300W Tc | 400A | 0.0033Ohm | 2390 mJ | 55V | N-Channel | 21620pF @ 25V | 3.3m Ω @ 80A, 10V | 4V @ 230μA | 100A Tc | 480nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IPI25N06S3-25 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi25n06s325-datasheets-1045.pdf | 55V | 25A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | 260 | 3 | Single | 40 | 48W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 27ns | 27 ns | 16 ns | 25A | 20V | SILICON | SWITCHING | 48W Tc | 60 mJ | 55V | N-Channel | 1862pF @ 25V | 25.1m Ω @ 15A, 10V | 4V @ 20μA | 25A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IPI25N06S3L-22 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi25n06s3l22-datasheets-1052.pdf | 55V | 25A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | 260 | 3 | Single | 40 | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 26ns | 43 ns | 30 ns | 25A | 16V | SILICON | 50W Tc | 100A | 0.0216Ohm | 120 mJ | 55V | N-Channel | 2260pF @ 25V | 21.6m Ω @ 17A, 10V | 2.2V @ 20μA | 25A Tc | 47nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||||
| IPI45N06S3-16 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi45n06s316-datasheets-1056.pdf | 55V | 45A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | e3 | MATTE TIN | 260 | 3 | Single | 40 | 65W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 61ns | 68 ns | 26 ns | 45A | 20V | SILICON | 65W Tc | 95 mJ | 55V | N-Channel | 2980pF @ 25V | 15.7m Ω @ 23A, 10V | 4V @ 30μA | 45A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IPI11N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi11n03la-datasheets-1060.pdf | 25V | 30A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 52W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 43ns | 2.8 ns | 20 ns | 30A | 20V | SILICON | SWITCHING | 52W Tc | 210A | 0.0115Ohm | 80 mJ | 25V | N-Channel | 1358pF @ 15V | 11.5m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| IPP06CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp06cne8ng-datasheets-1068.pdf | TO-220-3 | 3 | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 85V | 85V | 214W Tc | TO-220AB | 100A | 400A | 0.0065Ohm | 480 mJ | N-Channel | 9240pF @ 40V | 6.5m Ω @ 100A, 10V | 4V @ 180μA | 100A Tc | 138nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPP065N06LGAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp065n06lgaksa1-datasheets-1073.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 250W Tc | TO-220AB | 80A | 320A | 0.0065Ohm | 530 mJ | N-Channel | 5100pF @ 30V | 6.5m Ω @ 80A, 10V | 2V @ 180μA | 80A Tc | 157nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPI100N06S3L-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb100n06s3l03-datasheets-7862.pdf | 55V | 100A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | 260 | 3 | Single | 40 | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 70ns | 77 ns | 110 ns | 100A | 16V | SILICON | SWITCHING | 300W Tc | 400A | 0.0046Ohm | 690 mJ | 55V | N-Channel | 26240pF @ 25V | 3m Ω @ 80A, 10V | 2.2V @ 230μA | 100A Tc | 550nC @ 10V | 5V 10V | ±16V | |||||||||||||||||||||||||||
| IPI80N06S3L-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ipi80n06s3l05-datasheets-1085.pdf | 55V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | 260 | 3 | Single | 40 | 165W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 49ns | 41 ns | 65 ns | 80A | 16V | SILICON | SWITCHING | 165W Tc | 320A | 0.008Ohm | 345 mJ | 55V | N-Channel | 13060pF @ 25V | 4.8m Ω @ 69A, 10V | 2.2V @ 115μA | 80A Tc | 273nC @ 10V | 5V 10V | ±16V |
