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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPI100N06S3-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi100n06s303-datasheets-1041.pdf | 55V | 100A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | 260 | 3 | Single | 40 | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 67ns | 60 ns | 77 ns | 100A | 20V | SILICON | 300W Tc | 400A | 0.0033Ohm | 2390 mJ | 55V | N-Channel | 21620pF @ 25V | 3.3m Ω @ 80A, 10V | 4V @ 230μA | 100A Tc | 480nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF7832ZTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7832ztr-datasheets-0954.pdf | 8-SOIC (0.154, 3.90mm Width) | 30V | 2.5W Ta | N-Channel | 3860pF @ 15V | 3.8m Ω @ 20A, 10V | 2.35V @ 250μA | 21A Ta | 45nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7805ATRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf7805trpbf-datasheets-9622.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | No | 2.5W | 1 | 8-SO | 16 ns | 20ns | 16 ns | 38 ns | 13A | 12V | 30V | 2.5W Ta | 11mOhm | 30V | N-Channel | 11mOhm @ 7A, 4.5V | 3V @ 250μA | 13A Ta | 31nC @ 5V | 11 mΩ | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| IPI45N06S3L-13 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi45n06s3l13-datasheets-0964.pdf | 55V | 45A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | 260 | 3 | Single | 40 | 65W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 46ns | 124 ns | 58 ns | 45A | 16V | SILICON | 65W Tc | 95 mJ | 55V | N-Channel | 3600pF @ 25V | 13.4m Ω @ 26A, 10V | 2.2V @ 30μA | 45A Tc | 75nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IRF7241PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7241trpbf-datasheets-0336.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 2.5W Ta | MS-012AA | 6.2A | P-Channel | 3220pF @ 25V | 41m Ω @ 6.2A, 10V | 3V @ 250μA | 6.2A Ta | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD230N06NGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd230n06ngbtma1-datasheets-0982.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 100W Tc | TO-252AA | 30A | 120A | 0.023Ohm | 150 mJ | N-Channel | 1100pF @ 30V | 23m Ω @ 30A, 10V | 4V @ 50μA | 30A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPI09N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp09n03la-datasheets-5497.pdf | 25V | 50A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 88.5ns | 4.2 ns | 22 ns | 50A | 20V | SILICON | SWITCHING | 63W Tc | 65A | 0.0155Ohm | 75 mJ | 25V | N-Channel | 1642pF @ 15V | 9.2m Ω @ 30A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPI60R385CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi60r385cpxksa1-datasheets-0991.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 8 Weeks | yes | compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 83W Tc | 9A | 27A | 0.385Ohm | 227 mJ | N-Channel | 790pF @ 100V | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 9A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPI80N06S3L-08 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ipi80n06s3l08-datasheets-0998.pdf | 55V | 80A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | 260 | 3 | Single | 40 | 105W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 35ns | 25 ns | 39 ns | 80A | 16V | SILICON | SWITCHING | 105W Tc | 320A | 0.0079Ohm | 55V | N-Channel | 6475pF @ 25V | 7.9m Ω @ 43A, 10V | 2.2V @ 55μA | 80A Tc | 134nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IPI77N06S3-09 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi77n06s309-datasheets-1002.pdf | 55V | 77A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | 260 | 3 | Single | 40 | 107W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 51ns | 51 ns | 29 ns | 77A | 20V | SILICON | SWITCHING | 107W Tc | 308A | 55V | N-Channel | 5335pF @ 25V | 9.1m Ω @ 39A, 10V | 4V @ 55μA | 77A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPP070N06L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp070n06lg-datasheets-1006.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 214W Tc | TO-220AB | 80A | 320A | 0.007Ohm | 450 mJ | N-Channel | 4300pF @ 30V | 7m Ω @ 80A, 10V | 2V @ 150μA | 80A Tc | 126nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP050N06N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp050n06ng-datasheets-1009.pdf | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | compliant | NO | SINGLE | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 300W Tc | TO-220AB | 100A | 400A | 0.005Ohm | 810 mJ | N-Channel | 6100pF @ 30V | 5m Ω @ 100A, 10V | 4V @ 270μA | 100A Tc | 167nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF3711STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf3711pbf-datasheets-8504.pdf | 20V | 110A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 3 | No | 120W | D2PAK | 2.98nF | 12 ns | 220ns | 12 ns | 17 ns | 110A | 20V | 20V | 3.1W Ta 120W Tc | 8.5mOhm | 20V | N-Channel | 2980pF @ 10V | 6mOhm @ 15A, 10V | 3V @ 250μA | 110A Tc | 44nC @ 4.5V | 6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPF04N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd04n03lag-datasheets-5751.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 115W Tc | 50A | 350A | 0.0057Ohm | 600 mJ | N-Channel | 5199pF @ 15V | 3.8m Ω @ 50A, 10V | 2V @ 30μA | 50A Tc | 41nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF7205PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7205trpbf-datasheets-7529.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Tc | MS-012AA | 4.6A | 15A | 0.07Ohm | P-Channel | 870pF @ 10V | 70m Ω @ 4.6A, 10V | 3V @ 250μA | 4.6A Ta | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPI14N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp14n03la-datasheets-5522.pdf | 25V | 30A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 46W Tc | 210A | 0.0139Ohm | 60 mJ | N-Channel | 1043pF @ 15V | 13.9m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 8.3nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF7207PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | -20V | -5.4A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | No | 2.5W | 1 | 8-SO | 780pF | 11 ns | 24ns | 41 ns | 43 ns | -5.4A | 12V | 20V | -700mV | 2.5W Tc | 60mOhm | -20V | P-Channel | 780pF @ 15V | 60mOhm @ 5.4A, 4.5V | 700mV @ 250μA | 5.4A Tc | 22nC @ 4.5V | 60 mΩ | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| IPF10N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf10n03lag-datasheets-0865.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 52W Tc | 30A | 210A | 0.0104Ohm | 80 mJ | N-Channel | 1358pF @ 15V | 10.4m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPF10N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf10n03lag-datasheets-0865.pdf | 25V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 220 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | 52W Tc | 210A | 0.0104Ohm | 80 mJ | N-Channel | 1358pF @ 15V | 10.4m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF7822TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf7822pbf-datasheets-6787.pdf | 30V | 18A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 6.5MOhm | 8 | No | 3.1W | 1 | 8-SO | 5.5nF | 15 ns | 5.5ns | 12 ns | 22 ns | 18A | 12V | 30V | 3.1W Ta | 6.5mOhm | 30V | N-Channel | 5500pF @ 16V | 6.5mOhm @ 15A, 4.5V | 1V @ 250μA | 18A Ta | 60nC @ 5V | 6.5 mΩ | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| IPFH6N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdh6n03lag-datasheets-7964.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 71W Tc | 50A | 350A | 0.0062Ohm | 150 mJ | N-Channel | 2390pF @ 15V | 6.2m Ω @ 50A, 10V | 2V @ 30μA | 50A Tc | 19nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF7233PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7233trpbf-datasheets-0753.pdf | -12V | -9.5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 20MOhm | 8 | No | 2.5W | 1 | 8-SO | 6nF | 540ns | 370 ns | 77 ns | -9.5A | 12V | 12V | 2.5W Ta | 20mOhm | -12V | P-Channel | 6000pF @ 10V | 20mOhm @ 9.5A, 4.5V | 600mV @ 250μA | 9.5A Ta | 74nC @ 5V | 20 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| AUXHMF7321D2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7321d2trpbf-datasheets-9658.pdf | 8-SOIC (0.154, 3.90mm Width) | 30V | 2W Ta | P-Channel | 710pF @ 25V | 62m Ω @ 4.9A, 10V | 1V @ 250μA | 4.7A Ta | 34nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPF04N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd04n03lag-datasheets-5751.pdf | 25V | 50A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G3 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 115W Tc | TO-252AA | 0.0059Ohm | 600 mJ | N-Channel | 5199pF @ 15V | 3.8m Ω @ 50A, 10V | 2V @ 30μA | 50A Tc | 41nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPD20N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd20n03lg-datasheets-0908.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | YES | SINGLE | GULL WING | 4 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 42W Tc | 30A | 120A | 0.031Ohm | 15 mJ | N-Channel | 695pF @ 25V | 20m Ω @ 15A, 10V | 2V @ 25μA | 30A Tc | 19nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPD20N03L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/infineontechnologies-ipd20n03l-datasheets-0912.pdf | 30V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | No SVHC | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 255 | 4 | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.6V | 60W Tc | TO-252AA | N-Channel | 700pF @ 25V | 1.6 V | 20m Ω @ 15A, 10V | 2V @ 25μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF3717PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf3717trpbf-datasheets-9611.pdf&product=infineontechnologies-irf3717pbf-6859370 | 20V | 20A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | No SVHC | 4.4MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 12 ns | 14ns | 6 ns | 15 ns | 20A | 20V | SILICON | SWITCHING | 2V | 2.5W Ta | 32 ns | 32 mJ | 20V | N-Channel | 2890pF @ 10V | 2 V | 4.4m Ω @ 20A, 10V | 2.45V @ 250μA | 20A Ta | 33nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IPF09N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu09n03lag-datasheets-5465.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 63W Tc | 50A | 350A | 0.0148Ohm | 75 mJ | N-Channel | 1642pF @ 15V | 8.6m Ω @ 30A, 10V | 2V @ 20μA | 50A Tc | 13nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPDH5N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdh5n03lag-datasheets-0847.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 83W Tc | TO-252AA | 50A | 350A | 0.0052Ohm | 225 mJ | N-Channel | 2653pF @ 15V | 5.2m Ω @ 50A, 10V | 2V @ 35μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF7807D1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7807d1pbf-datasheets-7682.pdf | 30V | 8.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | EAR99 | No | Single | 1.6W | FET General Purpose Power | 8.3A | 12V | 2.5W Ta | 30V | N-Channel | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 17nC @ 5V | Schottky Diode (Isolated) | 4.5V | ±12V |
