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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SPB80N03S2L-06 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp80n03s2l06-datasheets-5469.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 30V | 150W Tc | N-Channel | 2530pF @ 25V | 5.9mOhm @ 80A, 10V | 2V @ 80μA | 80A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPB80N06S2L-06 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2l06-datasheets-1559.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 320A | 0.0084Ohm | 530 mJ | N-Channel | 5050pF @ 25V | 6.3m Ω @ 69A, 10V | 2V @ 180μA | 80A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||
| SPB80N06S2L-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2l05-datasheets-1499.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 320A | 0.0057Ohm | 800 mJ | N-Channel | 7530pF @ 25V | 4.5m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| SPB80N08S2L-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n08s2l07-datasheets-1503.pdf | 75V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 320A | 0.0087Ohm | 810 mJ | N-Channel | 6820pF @ 25V | 6.8m Ω @ 67A, 10V | 2V @ 250μA | 80A Tc | 233nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SPB80N06S2L-11 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2l11-datasheets-1507.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 158W Tc | 320A | 0.0147Ohm | 280 mJ | N-Channel | 2650pF @ 25V | 11m Ω @ 40A, 10V | 2V @ 93μA | 80A Tc | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SPB80N06S2-09 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s209-datasheets-1511.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 190W Tc | 320A | 0.0091Ohm | 370 mJ | N-Channel | 3140pF @ 25V | 9.1m Ω @ 50A, 10V | 4V @ 125μA | 80A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| SPD14N06S2-80 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spd14n06s280-datasheets-1515.pdf | 55V | 17A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 7 ns | 28ns | 27 ns | 22 ns | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30W Tc | 14A | 68A | 0.08Ohm | N-Channel | 400pF @ 25V | 80m Ω @ 7A, 10V | 4V @ 14μA | 17A Tc | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||
| SPB80N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n10l-datasheets-1519.pdf | 100V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 220 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250W Tc | 320A | 0.024Ohm | 700 mJ | N-Channel | 4540pF @ 25V | 14m Ω @ 58A, 10V | 2V @ 2mA | 80A Tc | 240nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SPB80N06S2-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s207-datasheets-1523.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | 320A | 0.0066Ohm | 530 mJ | N-Channel | 4540pF @ 25V | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 80A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| SPB80N03S2L-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n03s2l04g-datasheets-1443.pdf | 30V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 188W Tc | 320A | 0.0062Ohm | 380 mJ | N-Channel | 3900pF @ 25V | 3.9m Ω @ 80A, 10V | 2V @ 130μA | 80A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||
| SPB80N08S2-07 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n08s207-datasheets-1531.pdf | 75V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 320A | 0.0071Ohm | 810 mJ | N-Channel | 6130pF @ 25V | 7.1m Ω @ 66A, 10V | 4V @ 250μA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| SPB70N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb70n10l-datasheets-1535.pdf | 100V | 70A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 70A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250W Tc | 280A | 0.025Ohm | 700 mJ | N-Channel | 4540pF @ 25V | 16m Ω @ 50A, 10V | 2V @ 2mA | 70A Tc | 240nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||
| SPB80P06P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp80p06pbksa1-datasheets-5371.pdf | -60V | -80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 340W Tc | 320A | 0.023Ohm | 824 mJ | P-Channel | 5033pF @ 25V | 23m Ω @ 64A, 10V | 4V @ 5.5mA | 80A Tc | 173nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| SPB80N06S2-08 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s208-datasheets-1543.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 215W Tc | 320A | 0.008Ohm | 450 mJ | N-Channel | 3800pF @ 25V | 8m Ω @ 58A, 10V | 4V @ 150μA | 80A Tc | 96nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| SPB80N06S2-H5 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s2h5-datasheets-1547.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 320A | 0.0055Ohm | 700 mJ | N-Channel | 5500pF @ 25V | 5.5m Ω @ 80A, 10V | 4V @ 230μA | 80A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| SPB80N04S2-04 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n04s204-datasheets-1491.pdf | 40V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e0 | TIN LEAD | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 320A | 0.0034Ohm | 810 mJ | N-Channel | 6980pF @ 25V | 3.4m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| SPB77N06S2-12 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb77n06s212-datasheets-1495.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 158W Tc | 77A | 320A | 0.012Ohm | 280 mJ | N-Channel | 2350pF @ 25V | 12m Ω @ 38A, 10V | 4V @ 93μA | 80A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| SPB10N10L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb10n10l-datasheets-1435.pdf | 100V | 10.3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | No | e0 | TIN LEAD | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 4.6 ns | 19.1ns | 17.8 ns | 27.8 ns | 10.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50W Tc | 42.2A | 0.21Ohm | 60 mJ | N-Channel | 444pF @ 25V | 154m Ω @ 8.1A, 10V | 2V @ 21μA | 10.3A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| SPB21N10 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp21n10-datasheets-5988.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | YES | FET General Purpose Power | Single | 100V | 90W Tc | 21A | N-Channel | 865pF @ 25V | 80m Ω @ 15A, 10V | 4V @ 44μA | 21A Tc | 38.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SPB80N03S2L-04 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n03s2l04g-datasheets-1443.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 30V | 188W Tc | N-Channel | 3900pF @ 25V | 3.9mOhm @ 80A, 10V | 2V @ 130μA | 80A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPB80N03S2L-03 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n03s2l03g-datasheets-1447.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 300W Tc | N-Channel | 8180pF @ 25V | 2.8m Ω @ 80A, 10V | 2V @ 250μA | 80A Tc | 220nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPB80N06S08ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | /files/infineontechnologies-spb80n06s08atma1-datasheets-1451.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 10 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | R-PSSO-G2 | 22 ns | 53ns | 32 ns | 54 ns | 80A | 20V | 55V | SILICON | DRAIN | 300W Tc | 0.0077Ohm | 700 mJ | 55V | N-Channel | 3660pF @ 25V | 7.7m Ω @ 80A, 10V | 4V @ 240μA | 80A Tc | 187nC @ 10V | 10V | ±20V | |||||||||||||||||
| SPB80N03S203GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/infineontechnologies-spb80n03s203gatma1-datasheets-1455.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 80A | 30V | 300W Tc | N-Channel | 7020pF @ 25V | 3.1m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPU05N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf05n03lag-datasheets-5680.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 94W Tc | 50A | 350A | 0.0086Ohm | 300 mJ | N-Channel | 3110pF @ 15V | 5.3m Ω @ 30A, 10V | 2V @ 50μA | 50A Tc | 25nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| SPB10N10 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb10n10g-datasheets-1389.pdf | 100V | 10.3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | EAR99 | AVALANCHE RATED | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 220 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 8.2 ns | 46ns | 23 ns | 29 ns | 10.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 50W Tc | 41.2A | 0.17Ohm | 60 mJ | N-Channel | 426pF @ 25V | 170m Ω @ 7.8A, 10V | 4V @ 21μA | 10.3A Tc | 19.4nC @ 10V | 10V | ±20V | ||||||||||||||||||
| SPB73N03S2L-08 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp73n03s2l08xk-datasheets-5648.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 30V | 107W Tc | N-Channel | 1710pF @ 25V | 8.1mOhm @ 36A, 10V | 2V @ 55μA | 73A Tc | 46.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPSH6N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipuh6n03lbg-datasheets-1365.pdf | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 30V | 83W Tc | N-Channel | 2800pF @ 15V | 6.3mOhm @ 50A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPB42N03S2L-13 G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb42n03s2l13-datasheets-2784.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 83W Tc | N-Channel | 1130pF @ 25V | 12.6m Ω @ 21A, 10V | 2V @ 37μA | 42A Tc | 30.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPU05N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipf05n03lag-datasheets-5680.pdf | 25V | 50A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 94W Tc | 0.0086Ohm | 300 mJ | N-Channel | 3110pF @ 15V | 5.3m Ω @ 30A, 10V | 2V @ 50μA | 50A Tc | 25nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| SPB80N06S2-05 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spb80n06s205-datasheets-1483.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | unknown | e3 | MATTE TIN | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 320A | 0.0048Ohm | 810 mJ | N-Channel | 6790pF @ 25V | 4.8m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 170nC @ 10V | 10V | ±20V |
