Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IRF3711ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/infineontechnologies-irf3711zpbf-datasheets-8407.pdf | 20V | 92A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Lead Free | No SVHC | 6mOhm | 3 | No | Single | 79W | 1 | D2PAK | 2.15nF | 12 ns | 16ns | 5.4 ns | 15 ns | 92A | 20V | 20V | 20V | 2V | 79W Tc | 24 ns | 7.3mOhm | 20V | N-Channel | 2150pF @ 10V | 2 V | 6mOhm @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRF3709SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf3709pbf-datasheets-7962.pdf | 30V | 90A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | No SVHC | 9MOhm | 3 | No | Single | 120W | 1 | D2PAK | 2.672nF | 11 ns | 171ns | 9.2 ns | 21 ns | 90A | 20V | 30V | 30V | 3V | 3.1W Ta 120W Tc | 10.5mOhm | 30V | N-Channel | 2672pF @ 16V | 3 V | 9mOhm @ 15A, 10V | 3V @ 250μA | 90A Tc | 41nC @ 5V | 9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRL3715LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3715spbf-datasheets-8355.pdf | 20V | 54A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 71W | TO-262 | 1.06nF | 73ns | 54A | 20V | 20V | 3.8W Ta 71W Tc | 20mOhm | 20V | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 14 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF520NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 100V | 3.8W Ta 48W Tc | N-Channel | 330pF @ 25V | 200mOhm @ 5.7A, 10V | 4V @ 250μA | 9.7A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFZ44ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfz44zpbf-datasheets-9533.pdf | 55V | 51A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 16 Weeks | No SVHC | 13.9mOhm | 3 | EAR99 | No | Single | 80W | 1 | 14 ns | 68ns | 41 ns | 33 ns | 51A | 20V | 55V | 4V | 80W Tc | 35 ns | 55V | N-Channel | 1420pF @ 25V | 4 V | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFZ48ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfz48zpbf-datasheets-8463.pdf | 55V | 61A | TO-220-3 | 8.77mm | Lead Free | No SVHC | 11Ohm | 3 | 91W | 1 | TO-220AB | 1.72nF | 15 ns | 69ns | 35 ns | 61A | 20V | 55V | 55V | 91W Tc | 31 ns | 11mOhm | 55V | N-Channel | 1720pF @ 25V | 4 V | 11mOhm @ 37A, 10V | 4V @ 250μA | 61A Tc | 64nC @ 10V | 11 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRFZ46ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/infineontechnologies-irfz46zstrlpbf-datasheets-9839.pdf | 55V | 51A | TO-220-3 | 10.6426mm | 9.017mm | 4.82mm | Lead Free | 3 | No SVHC | 13.6MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | SINGLE | 82W | 1 | FET General Purpose Power | 13 ns | 63ns | 39 ns | 37 ns | 51A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 82W Tc | TO-220AB | 200A | 97 mJ | 55V | N-Channel | 1460pF @ 25V | 4 V | 13.6m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRF3706PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf3706pbf-datasheets-8476.pdf | 20V | 77A | TO-220-3 | Lead Free | No SVHC | 8.5MOhm | 3 | Single | 88W | 1 | TO-220AB | 2.41nF | 87ns | 4.8 ns | 17 ns | 77A | 12V | 20V | 20V | 2V | 88W Tc | 10.5mOhm | 20V | N-Channel | 2410pF @ 10V | 2 V | 8.5mOhm @ 15A, 10V | 2V @ 250μA | 77A Tc | 35nC @ 4.5V | 8.5 mΩ | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
IRFZ46ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfz46zstrlpbf-datasheets-9839.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 82W Tc | 51A | 200A | 0.0136Ohm | 97 mJ | N-Channel | 1460pF @ 25V | 13.6m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRL3714ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/infineontechnologies-irl3714zspbf-datasheets-8490.pdf | 20V | 36A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Lead Free | No SVHC | 16mOhm | 3 | No | Single | 35W | 1 | D2PAK | 550pF | 6 ns | 13ns | 5 ns | 10 ns | 36A | 20V | 20V | 20V | 2.1V | 35W Tc | 12 ns | 16mOhm | 20V | N-Channel | 550pF @ 10V | 2.1 V | 16mOhm @ 15A, 10V | 2.55V @ 250μA | 36A Tc | 7.2nC @ 4.5V | 16 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRL3302PBF | Infineon Technologies | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3302pbf-datasheets-8499.pdf | 20V | 39A | TO-220-3 | Lead Free | 23MOhm | 3 | Single | 57W | TO-220AB | 1.3nF | 7.2 ns | 110ns | 89 ns | 41 ns | 39A | 10V | 20V | 57W Tc | 20mOhm | 20V | N-Channel | 1300pF @ 15V | 20mOhm @ 23A, 7V | 700mV @ 250μA | 39A Tc | 31nC @ 4.5V | 20 mΩ | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
IRF3711PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irf3711pbf-datasheets-8504.pdf | 20V | 110A | TO-220-3 | 10.5156mm | 8.763mm | 4.69mm | Lead Free | 3 | No SVHC | 6MOhm | 3 | EAR99 | No | Single | 120W | 1 | FET General Purpose Power | 12 ns | 220ns | 12 ns | 17 ns | 110A | 20V | 20V | SILICON | DRAIN | SWITCHING | 3V | 3.1W Ta 120W Tc | TO-220AB | 440A | 460 mJ | 20V | N-Channel | 2980pF @ 10V | 3 V | 6m Ω @ 15A, 10V | 3V @ 250μA | 110A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRF9Z24NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf9z24nstrlpbf-datasheets-8674.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 55V | 3.8W Ta 45W Tc | P-Channel | 350pF @ 25V | 175mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF3709ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3709zlpbf-datasheets-8516.pdf | 30V | 87A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 6.3MOhm | 3 | No | Single | 79W | 1 | TO-262 | 2.13nF | 13 ns | 41ns | 4.7 ns | 16 ns | 87A | 20V | 30V | 79W Tc | 6.3mOhm | 30V | N-Channel | 2130pF @ 15V | 6.3mOhm @ 21A, 10V | 2.25V @ 250μA | 87A Tc | 26nC @ 4.5V | 6.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
ZVN2535ASTOB | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn2535astoa-datasheets-8325.pdf | 350V | 90mA | E-Line-3 | Lead Free | 3 | EAR99 | unknown | 8541.29.00.95 | WIRE | 3 | Single | 700mW | 1 | Not Qualified | R-PSIP-W3 | 7ns | 7 ns | 16 ns | 90mA | 20V | SILICON | SWITCHING | 700mW Ta | 0.09A | 40Ohm | 350V | N-Channel | 70pF @ 25V | 35 Ω @ 100mA, 10V | 3V @ 1mA | 90mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
ZVN3310FTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn3310fta-datasheets-8117.pdf | 100V | 200mA | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 7.994566mg | EAR99 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1 | Single | 40 | 330mW | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | 3 ns | 5ns | 5 ns | 4 ns | 100mA | 20V | SILICON | 330mW Ta | 5 pF | 100V | N-Channel | 40pF @ 25V | 10 Ω @ 500mA, 10V | 2.4V @ 1mA | 100mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
ZVN3306FTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn3306fta-datasheets-6225.pdf | 60V | 150mA | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 7.994566mg | 1 | Single | 330mW | FET General Purpose Power | 3 ns | 4ns | 4 ns | 4 ns | 150mA | 20V | 330mW Ta | 60V | N-Channel | 35pF @ 18V | 5 Ω @ 500mA, 10V | 2.4V @ 1mA | 150mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRF520NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | 100V | 9.7A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 10.16mm | Lead Free | 2 | No SVHC | 200mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 4.5 ns | 23ns | 23 ns | 32 ns | 9.7A | 20V | DRAIN | SWITCHING | 4V | 3.8W Ta 48W Tc | 150 ns | 100V | N-Channel | 330pF @ 25V | 4 V | 200m Ω @ 5.7A, 10V | 4V @ 250μA | 9.7A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
IRFPS29N60LPBF | Vishay Siliconix | $5.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfps29n60lpbf-datasheets-8377.pdf | TO-274AA | 15.6mm | 20.3mm | 5mm | Unknown | 3 | 1 | Single | SUPER-247™ (TO-274AA) | 6.16nF | 34 ns | 100ns | 54 ns | 66 ns | 29A | 30V | 600V | 480W Tc | 210mOhm | N-Channel | 6160pF @ 25V | 210mOhm @ 17A, 10V | 5V @ 250μA | 29A Tc | 220nC @ 10V | 210 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRL3714SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3714lpbf-datasheets-8347.pdf | 20V | 36A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | No SVHC | 20mOhm | 3 | D2PAK | 670pF | 78ns | 36A | 20V | 20V | 3V | 47W Tc | N-Channel | 670pF @ 10V | 3 V | 20mOhm @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 20 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRLZ44ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlz44zpbf-datasheets-1663.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 80W Tc | 51A | 204A | 0.0135Ohm | 78 mJ | N-Channel | 1620pF @ 25V | 13.5m Ω @ 31A, 10V | 3V @ 250μA | 51A Tc | 36nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
ZVN4106FTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn4106fta-datasheets-1663.pdf | 60V | 200mA | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 7.994566mg | EAR99 | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1 | Single | 40 | 330mW | 1 | Not Qualified | R-PDSO-G3 | 5 ns | 7ns | 7 ns | 6 ns | 200mA | 20V | SILICON | 350mW Ta | 0.2A | 8 pF | 60V | N-Channel | 35pF @ 25V | 2.5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
ZVN2120GTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn2120gta-datasheets-3053.pdf | 200V | 320mA | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 7.994566mg | EAR99 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 4 | 1 | 40 | 2W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 8 ns | 8ns | 12 ns | 20 ns | 320mA | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 2W Ta | 0.32A | 2A | 200V | N-Channel | 85pF @ 25V | 10 Ω @ 250mA, 10V | 3V @ 1mA | 320mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFPS30N60KPBF | Vishay Siliconix | $57.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps30n60kpbf-datasheets-8396.pdf | TO-274AA | 15.6mm | 20.3mm | 5mm | 3 | 1 | Single | SUPER-247™ (TO-274AA) | 5.87nF | 29 ns | 120ns | 50 ns | 56 ns | 30A | 30V | 600V | 450W Tc | 190mOhm | N-Channel | 5870pF @ 25V | 190mOhm @ 18A, 10V | 5V @ 250μA | 30A Tc | 220nC @ 10V | 190 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
FDR838P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 1999 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdr838p-datasheets-8398.pdf | 8-LSOP (0.130, 3.30mm Width) | SuperSOT™-8 | 20V | 1.8W Ta | P-Channel | 3300pF @ 10V | 17mOhm @ 8A, 4.5V | 1.5V @ 250μA | 8A Ta | 45nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL2703SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 30V | 24A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | No SVHC | 40mOhm | 3 | No | Single | 45W | D2PAK | 450pF | 8.5 ns | 140ns | 20 ns | 12 ns | 24A | 16V | 30V | 30V | 45W Tc | 60mOhm | 30V | N-Channel | 450pF @ 25V | 1 V | 40mOhm @ 14A, 10V | 1V @ 250μA | 24A Tc | 15nC @ 4.5V | 40 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
IRF3711ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/infineontechnologies-irf3711zpbf-datasheets-8407.pdf | 20V | 92A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Lead Free | No SVHC | 6Ohm | 3 | No | 79W | 1 | TO-220AB | 2.15nF | 12 ns | 16ns | 5.4 ns | 15 ns | 92A | 20V | 20V | 20V | 2V | 79W Tc | 24 ns | 7.3mOhm | 20V | N-Channel | 2150pF @ 10V | 2 V | 6mOhm @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
ZVN0124ZSTOA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 240V | 160mA | E-Line-3 | Lead Free | 700mW | 700mW | E-Line (TO-92 compatible) | 85pF | 160mA | 20V | 240V | 16Ohm | 240V | N-Channel | 85pF @ 25V | 16Ohm @ 250mA, 10V | 3V @ 1mA | 160mA Ta | 16 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL3715PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3715spbf-datasheets-8355.pdf | 20V | 54A | TO-220-3 | Lead Free | 3 | 71W | TO-220AB | 1.06nF | 73ns | 54A | 20V | 20V | 3.8W Ta 71W Tc | 20mOhm | 20V | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 14 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS6672A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds6672a-datasheets-8365.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 2.5W Ta | N-Channel | 5070pF @ 15V | 8mOhm @ 14A, 10V | 2V @ 250μA | 12.5A Ta | 46nC @ 4.5V | 4.5V 10V | ±12V |
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