Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRLR3714ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3714zpbf-datasheets-9174.pdf | 20V | 37A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | Lead Free | No SVHC | 3 | No | Single | 35mW | 1 | D-Pak | 560pF | 5.4 ns | 7.6ns | 4.3 ns | 9.2 ns | 37A | 20V | 20V | 2.1V | 35W Tc | 32 ns | 25mOhm | 20V | N-Channel | 560pF @ 10V | 15mOhm @ 15A, 10V | 2.55V @ 250μA | 37A Tc | 7.1nC @ 4.5V | 15 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRL1104PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl1104pbf-datasheets-9181.pdf | 40V | 104A | TO-220-3 | 8.77mm | Lead Free | No SVHC | 3 | Single | 167W | TO-220AB | 3.445nF | 18 ns | 257ns | 64 ns | 32 ns | 104A | 16V | 40V | 40V | 167W Tc | 126 ns | 12mOhm | 40V | N-Channel | 3445pF @ 25V | 1 V | 8mOhm @ 62A, 10V | 1V @ 250μA | 104A Tc | 68nC @ 4.5V | 8 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRFS4710PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb4710pbf-datasheets-0978.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | 75A | 100V | 3.8W Ta 200W Tc | N-Channel | 6160pF @ 25V | 14m Ω @ 45A, 10V | 5.5V @ 250μA | 75A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1404SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf1404lpbf-datasheets-0994.pdf | 40V | 162A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 4mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 140ns | 26 ns | 72 ns | 162A | 20V | 40V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 200W Tc | 110 ns | 75A | 650A | 40V | N-Channel | 7360pF @ 25V | 4 V | 4m Ω @ 95A, 10V | 4V @ 250μA | 162A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IRFS41N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfb41n15dpbf-datasheets-1190.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.1W Ta | 41A | 164A | 0.045Ohm | 470 mJ | N-Channel | 2520pF @ 25V | 45m Ω @ 25A, 10V | 5.5V @ 250μA | 41A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL3103D1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-220-3 | TO-220AB | 30V | 2W Ta 89W Tc | N-Channel | 1900pF @ 25V | 14mOhm @ 34A, 10V | 1V @ 250μA | 64A Tc | 43nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irlz44zpbf-datasheets-1663.pdf | 55V | 51A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No | 80W | 1 | 14 ns | 160ns | 42 ns | 25 ns | 51A | 16V | 80W Tc | 55V | N-Channel | 1620pF @ 25V | 13.5m Ω @ 31A, 10V | 3V @ 250μA | 51A Tc | 36nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1607PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf1607pbf-datasheets-9222.pdf | 75V | 142A | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 7.5Ohm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 380W | 1 | FET General Purpose Power | 22 ns | 130ns | 86 ns | 84 ns | 142A | 20V | 75V | SILICON | DRAIN | SWITCHING | 380W Tc | TO-220AB | 75A | 570A | 75V | N-Channel | 7750pF @ 25V | 4 V | 7.5m Ω @ 85A, 10V | 4V @ 250μA | 142A Tc | 320nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF3305PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irf3305pbf-datasheets-9230.pdf | 55V | 75A | TO-220-3 | 10.668mm | 16.51mm | 4.826mm | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED | No | Single | 330W | 1 | FET General Purpose Power | 16 ns | 88ns | 34 ns | 43 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 330W Tc | TO-220AB | 560A | 0.008Ohm | 860 mJ | 55V | N-Channel | 3650pF @ 25V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF3415SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf3415strlpbf-datasheets-5313.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 200W Tc | 43A | 150A | 0.042Ohm | 590 mJ | N-Channel | 2400pF @ 25V | 42m Ω @ 22A, 10V | 4V @ 250μA | 43A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL3803SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irl3803strlpbf-datasheets-5116.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 200W Tc | 140A | 470A | 0.006Ohm | 610 mJ | N-Channel | 5000pF @ 25V | 6m Ω @ 71A, 10V | 1V @ 250μA | 140A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFS23N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfb23n20dpbf-datasheets-4027.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.8W Ta 170W Tc | 24A | 96A | 0.1Ohm | 250 mJ | N-Channel | 1960pF @ 25V | 100m Ω @ 14A, 10V | 5.5V @ 250μA | 24A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF3710SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf3710strlpbf-datasheets-0132.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 52 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 200W Tc | 57A | 180A | 0.023Ohm | 280 mJ | N-Channel | 3130pF @ 25V | 23m Ω @ 28A, 10V | 4V @ 250μA | 57A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF630NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf630npbf-datasheets-9120.pdf&product=infineontechnologies-irf630nspbf-6858990 | 200V | 9.3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 300mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 82W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.9 ns | 14ns | 15 ns | 27 ns | 9.3A | 20V | SILICON | DRAIN | SWITCHING | 4V | 82W Tc | 176 ns | 94 mJ | 200V | N-Channel | 575pF @ 25V | 4 V | 300m Ω @ 5.4A, 10V | 4V @ 250μA | 9.3A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRL3103SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irl3103strlpbf-datasheets-9763.pdf | 30V | 64A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | No SVHC | 12MOhm | 3 | EAR99 | No | GULL WING | Single | 110W | 1 | R-PSSO-G2 | 8.9 ns | 120ns | 9.1 ns | 14 ns | 64A | 16V | 30V | SILICON | DRAIN | SWITCHING | 1V | 94W Tc | 220A | 30V | N-Channel | 1650pF @ 25V | 1 V | 12m Ω @ 34A, 10V | 1V @ 250μA | 64A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IRFBF30SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbf30strlpbf-datasheets-7017.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 2 | 1.437803g | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 40 | 125W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 25ns | 30 ns | 90 ns | 3.6A | 20V | SILICON | DRAIN | SWITCHING | 900V | 900V | 125W Tc | 250 mJ | N-Channel | 1200pF @ 25V | 3.7 Ω @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRC740PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc740pbf-datasheets-9064.pdf | 400V | 10A | TO-220-5 | Lead Free | 5 | unknown | SINGLE | 260 | 5 | 40 | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T5 | 14 ns | 25ns | 24 ns | 54 ns | 10A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 125W Tc | 40A | 0.55Ohm | 210 mJ | 400V | N-Channel | 1200pF @ 25V | 550m Ω @ 6A, 10V | 4V @ 250μA | 10A Tc | 66nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF1310NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf1310nstrlpbf-datasheets-0241.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 160W Tc | 42A | 140A | 0.036Ohm | 420 mJ | N-Channel | 1900pF @ 25V | 36m Ω @ 22A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF1405SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf1405strlpbf-datasheets-5286.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | 131A | 680A | 0.0053Ohm | 590 mJ | N-Channel | 5480pF @ 25V | 5.3m Ω @ 101A, 10V | 4V @ 250μA | 131A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFS59N10DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfb59n10dpbf-datasheets-3558.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 52 Weeks | EAR99 | 100V | 3.8W Ta 200W Tc | N-Channel | 2450pF @ 25V | 25m Ω @ 35.4A, 10V | 5.5V @ 250μA | 59A Tc | 114nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlz44nstrlpbf-datasheets-4204.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 110W Tc | 47A | 160A | 0.025Ohm | 210 mJ | N-Channel | 1700pF @ 25V | 22m Ω @ 25A, 10V | 2V @ 250μA | 47A Tc | 48nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IRF1010ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1010zstrlpbf-datasheets-9374.pdf | 55V | 75A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No | 140W | 1 | 18 ns | 150ns | 92 ns | 36 ns | 75A | 20V | 140W Tc | 55V | N-Channel | 2840pF @ 25V | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRC840PBF | Vishay Siliconix | $0.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc840pbf-datasheets-9108.pdf | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | 5 | 3.000003g | 5 | EAR99 | unknown | SINGLE | 260 | 5 | 1 | 40 | 1 | Not Qualified | 14 ns | 22ns | 21 ns | 55 ns | 8A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 500V | 125W Tc | 8A | 32A | N-Channel | 1300pF @ 25V | 850m Ω @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 67nC @ 10V | Current Sensing | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRL3502PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3502pbf-datasheets-9110.pdf | 20V | 110A | TO-220-3 | Lead Free | 3 | No | Single | 140W | 1 | TO-220AB | 4.7nF | 10 ns | 140ns | 130 ns | 96 ns | 110A | 10V | 20V | 140W Tc | 8mOhm | 20V | N-Channel | 4700pF @ 15V | 7mOhm @ 64A, 7V | 700mV @ 250μA | 110A Tc | 110nC @ 4.5V | 7 mΩ | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRL2203NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl2203nstrlpbf-datasheets-4378.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 180W Tc | 75A | 400A | 0.007Ohm | 290 mJ | N-Channel | 3290pF @ 25V | 7m Ω @ 60A, 10V | 3V @ 250μA | 116A Tc | 60nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF2807SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf2807strlpbf-datasheets-0613.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 230W Tc | 75A | 280A | 0.013Ohm | 340 mJ | N-Channel | 3820pF @ 25V | 13m Ω @ 43A, 10V | 4V @ 250μA | 82A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL1004SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irl1004spbf-datasheets-9027.pdf | 40V | 130A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 6.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 210ns | 14 ns | 25 ns | 130A | 16V | 40V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 200W Tc | 120 ns | 520A | 700 mJ | 40V | N-Channel | 5330pF @ 25V | 1 V | 6.5m Ω @ 78A, 10V | 1V @ 250μA | 130A Tc | 100nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||
| IRF1010NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf1010nstrlpbf-datasheets-9211.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | 55V | 180W Tc | N-Channel | 3210pF @ 25V | 11m Ω @ 43A, 10V | 4V @ 250μA | 85A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRC530PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc530pbf-datasheets-8948.pdf | 100V | 14A | TO-220-5 | Lead Free | 88W | 1 | 14A | 20V | 88W Tc | N-Channel | 700pF @ 25V | 160m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS33N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irfs33n15dpbf-datasheets-8950.pdf | 150V | 33A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Lead Free | 56mOhm | 3 | No | Single | 3.8W | 1 | 13 ns | 38ns | 21 ns | 23 ns | 33A | 30V | 3.8W Ta 170W Tc | 150V | N-Channel | 2020pF @ 25V | 56m Ω @ 20A, 10V | 5.5V @ 250μA | 33A Tc | 90nC @ 10V | 10V | ±30V |
