Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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ZVN3320ASTOB | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 200V | 100mA | E-Line-3 | Lead Free | 3 | EAR99 | unknown | 8541.29.00.95 | e3 | MATTE TIN | SINGLE | WIRE | 260 | 3 | 40 | 330mW | 1 | Not Qualified | R-PSIP-W3 | 100mA | 20V | SILICON | SINGLE | SWITCHING | 625mW Ta | 0.1A | 200V | N-Channel | 45pF @ 25V | 25 Ω @ 100mA, 10V | 3V @ 1mA | 100mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRL3302SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3302spbf-datasheets-8815.pdf | 20V | 39A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | No SVHC | 3 | Single | 57W | 1 | D2PAK | 1.3nF | 110ns | 89 ns | 41 ns | 39A | 10V | 20V | 57W Tc | 23mOhm | 20V | N-Channel | 1300pF @ 15V | 700 mV | 20mOhm @ 23A, 7V | 700mV @ 250μA | 39A Tc | 31nC @ 4.5V | 20 mΩ | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
IRL3705ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl3705zpbf-datasheets-2074.pdf | 55V | 86A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 8mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 130W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 240ns | 83 ns | 26 ns | 75A | 16V | 55V | SILICON | DRAIN | SWITCHING | 3V | 130W Tc | 24 ns | 55V | N-Channel | 2880pF @ 25V | 3 V | 8m Ω @ 52A, 10V | 3V @ 250μA | 75A Tc | 60nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||
IRL5602SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl5602spbf-datasheets-8829.pdf | -20V | -24A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | No SVHC | 3 | Single | 75W | 1 | D2PAK | 1.46nF | 9.7 ns | 73ns | 84 ns | 53 ns | -24A | 8V | -20V | 20V | -1V | 75W Tc | 42mOhm | -20V | P-Channel | 1460pF @ 15V | -1 V | 42mOhm @ 12A, 4.5V | 1V @ 250μA | 24A Tc | 44nC @ 4.5V | 42 mΩ | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
IRCZ24PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-ircz24pbf-datasheets-8834.pdf | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | 3.000003g | 1 | TO-220-5 | 720pF | 12 ns | 59ns | 38 ns | 25 ns | 17A | 20V | 55V | 60W Tc | 100mOhm | N-Channel | 720pF @ 25V | 100mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 24nC @ 10V | Current Sensing | 100 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRF634SPBF | Vishay Siliconix | $7.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf634strrpbf-datasheets-9861.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | 1.437803g | Unknown | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 770pF | 9.6 ns | 21ns | 19 ns | 42 ns | 8.1A | 20V | 250V | 4V | 3.1W Ta 74W Tc | 450mOhm | 250V | N-Channel | 770pF @ 25V | 450mOhm @ 5.1A, 10V | 4V @ 250μA | 8.1A Tc | 41nC @ 10V | 450 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFZ44ESPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfz44estrlpbf-datasheets-8378.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 110W Tc | 48A | 192A | 0.023Ohm | 220 mJ | N-Channel | 1360pF @ 25V | 23m Ω @ 29A, 10V | 4V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRF530NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf530nstrlpbf-datasheets-3873.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 70W Tc | 17A | 60A | 0.09Ohm | 93 mJ | N-Channel | 920pF @ 25V | 90m Ω @ 9A, 10V | 4V @ 250μA | 17A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFZ34NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfz34nstrlpbf-datasheets-4174.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 68W Tc | 29A | 100A | 0.04Ohm | 130 mJ | N-Channel | 700pF @ 25V | 40m Ω @ 16A, 10V | 4V @ 250μA | 29A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
FDS7088SN3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds7088sn3-datasheets-8782.pdf | 30V | 21A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 3W | 1 | 8-SO | 3.23nF | 21ns | 33 ns | 45 ns | 21A | 20V | 30V | 3W Ta | 3.4mOhm | 30V | N-Channel | 3230pF @ 15V | 4mOhm @ 21A, 10V | 3V @ 1mA | 21A Ta | 80nC @ 10V | 4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRL530NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl530nstrlpbf-datasheets-7930.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 79W Tc | 17A | 60A | 0.12Ohm | 150 mJ | N-Channel | 800pF @ 25V | 100m Ω @ 9A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRLZ34NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irlz34nstrlpbf-datasheets-7668.pdf | 55V | 30A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 60mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 68W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 8.9 ns | 100ns | 29 ns | 21 ns | 30A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 68W Tc | 76 ns | 55V | N-Channel | 880pF @ 25V | 2 V | 35m Ω @ 16A, 10V | 2V @ 250μA | 30A Tc | 25nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||
IRL3102PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3102pbf-datasheets-8805.pdf | TO-220-3 | 20V | 89W Tc | N-Channel | 2500pF @ 15V | 13m Ω @ 37A, 7V | 700mV @ 250μA | 61A Tc | 58nC @ 4.5V | 4.5V 7V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6215SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf6215strrpbf-datasheets-2240.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 110W Tc | 13A | 44A | 0.29Ohm | 310 mJ | P-Channel | 860pF @ 25V | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRF644NPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644nspbf-datasheets-8681.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | 1 | Single | 150W | 1 | TO-220AB | 1.06nF | 10 ns | 21ns | 17 ns | 30 ns | 14A | 20V | 250V | 150W Tc | 240mOhm | 250V | N-Channel | 1060pF @ 25V | 240mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 54nC @ 10V | 240 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
FDP13AN06A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/onsemiconductor-fdp13an06a0-datasheets-8720.pdf | 60V | 62A | TO-220-3 | 10.67mm | 9.65mm | 4.83mm | Lead Free | Unknown | 3 | Single | 115W | 1 | TO-220-3 | 1.35nF | 9 ns | 96ns | 26 ns | 44 ns | 62A | 20V | 60V | 4V | 115W Tc | 13.5mOhm | 60V | N-Channel | 1350pF @ 25V | 4 V | 13.5mOhm @ 62A, 10V | 4V @ 250μA | 10.9A Ta 62A Tc | 29nC @ 10V | 13.5 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRFZ48NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfz48nstrlpbf-datasheets-8663.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 22 Weeks | EAR99 | 55V | 3.8W Ta 130W Tc | N-Channel | 1970pF @ 25V | 14m Ω @ 32A, 10V | 4V @ 250μA | 64A Tc | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF3707SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3707pbf-datasheets-8617.pdf | 30V | 62A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | No SVHC | 12.5MOhm | 3 | Single | 87W | 1 | D2PAK | 1.99nF | 78ns | 3.3 ns | 11.8 ns | 62A | 20V | 30V | 30V | 3V | 87W Tc | 17mOhm | 30V | N-Channel | 1990pF @ 15V | 3 V | 12.5mOhm @ 15A, 10V | 3V @ 250μA | 62A Tc | 19nC @ 4.5V | 12.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF3707LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3707pbf-datasheets-8617.pdf | 30V | 62A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | Single | 87W | TO-262 | 1.99nF | 78ns | 3.3 ns | 11.8 ns | 62A | 20V | 30V | 87W Tc | 17mOhm | 30V | N-Channel | 1990pF @ 15V | 12.5mOhm @ 15A, 10V | 3V @ 250μA | 62A Tc | 19nC @ 4.5V | 12.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRF630NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf630npbf-datasheets-9120.pdf | 200V | 9A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 300mOhm | 3 | No | Single | 82W | 1 | TO-262 | 575pF | 7.9 ns | 14ns | 15 ns | 27 ns | 9.5A | 20V | 200V | 82W Tc | 300mOhm | 200V | N-Channel | 575pF @ 25V | 300mOhm @ 5.4A, 10V | 4V @ 250μA | 9.3A Tc | 35nC @ 10V | 300 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFZ30PBF | Vishay Siliconix | $8.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz30pbf-datasheets-8746.pdf | TO-220-3 | Lead Free | Unknown | 50mOhm | 3 | No | Single | 75W | TO-220AB | 1.6nF | 12 ns | 16ns | 16 ns | 23 ns | 30A | 20V | 50V | 4V | 74W Tc | 50mOhm | 50V | N-Channel | 1600pF @ 25V | 50mOhm @ 16A, 10V | 4V @ 250μA | 30A Tc | 30nC @ 10V | 50 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRF737LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf737lcpbf-datasheets-8664.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | 1 | Single | TO-220AB | 430pF | 6.6 ns | 21ns | 12 ns | 13 ns | 6.1A | 30V | 300V | 74W Tc | 750mOhm | N-Channel | 430pF @ 25V | 750mOhm @ 3.7A, 10V | 4V @ 250μA | 6.1A Tc | 17nC @ 10V | 750 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
ZVN3320FTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn3320fta-datasheets-6432.pdf | 200V | 60mA | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 7.994566mg | EAR99 | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1 | Single | 10 | 330mW | 1 | Not Qualified | R-PDSO-G3 | 5 ns | 7ns | 7 ns | 6 ns | 60mA | 20V | SILICON | 330mW Ta | 0.06A | 5 pF | 200V | N-Channel | 45pF @ 25V | 25 Ω @ 100mA, 10V | 3V @ 1mA | 60mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRLZ24NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | 55V | 3.8W Ta 45W Tc | N-Channel | 480pF @ 25V | 60m Ω @ 11A, 10V | 2V @ 250μA | 18A Tc | 15nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF644NSPBF | Vishay Siliconix | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644nspbf-datasheets-8681.pdf | 250V | 14A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 1.437803g | 1 | Single | 150W | 1 | D2PAK | 1.06nF | 10 ns | 21ns | 17 ns | 30 ns | 14A | 20V | 250V | 150W Tc | 240mOhm | 250V | N-Channel | 1060pF @ 25V | 240mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 54nC @ 10V | 240 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRF540ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf540zspbf-datasheets-8683.pdf&product=infineontechnologies-irf540zspbf-6858931 | 100V | 36A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 9 Weeks | No SVHC | 26.5mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 92W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 51ns | 39 ns | 43 ns | 36A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 92W Tc | 50 ns | 100V | N-Channel | 1770pF @ 25V | 4 V | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
IRFZ48ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/infineontechnologies-irfz48zpbf-datasheets-8463.pdf | 55V | 61A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.576mm | 9.652mm | Lead Free | 2 | No SVHC | 11MOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 91W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15 ns | 69ns | 39 ns | 35 ns | 61A | 20V | SILICON | DRAIN | SWITCHING | 4V | 91W Tc | 100 ns | 240A | 120 mJ | 55V | N-Channel | 1720pF @ 25V | 11m Ω @ 37A, 10V | 4V @ 250μA | 61A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
IRL3102SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3102spbf-datasheets-8704.pdf | 20V | 61A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | No SVHC | 3 | Single | 89W | 1 | D2PAK | 2.5nF | 130ns | 110 ns | 80 ns | 61A | 10V | 20V | 89W Tc | 15mOhm | 20V | N-Channel | 2500pF @ 15V | 700 mV | 13mOhm @ 37A, 7V | 700mV @ 250μA | 61A Tc | 58nC @ 4.5V | 13 mΩ | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
IRL3714ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | /files/infineontechnologies-irl3714zspbf-datasheets-8490.pdf | 20V | 36A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Lead Free | No SVHC | 3 | No | 35W | TO-220AB | 550pF | 6 ns | 13ns | 5 ns | 10 ns | 36A | 20V | 20V | 2.1V | 35W Tc | 26mOhm | 20V | N-Channel | 550pF @ 10V | 16mOhm @ 15A, 10V | 2.55V @ 250μA | 36A Tc | 7.2nC @ 4.5V | 16 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRFI624GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfi624g-datasheets-8546.pdf | TO-220-3 Full Pack, Isolated Tab | 9.8mm | Lead Free | 1.1Ohm | 3 | Single | 30W | TO-220-3 | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 3.4A | 20V | 250V | 30W Tc | 1.1Ohm | N-Channel | 260pF @ 25V | 1.1Ohm @ 2A, 10V | 4V @ 250μA | 3.4A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V |
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