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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF3707PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3707pbf-datasheets-8617.pdf | 30V | 62A | TO-220-3 | 8.77mm | Lead Free | 12.5MOhm | 3 | No | Single | 87W | 1 | TO-220AB | 1.99nF | 8.5 ns | 78ns | 3.3 ns | 11.8 ns | 62A | 20V | 30V | 87W Tc | 17mOhm | 30V | N-Channel | 1990pF @ 15V | 12.5mOhm @ 15A, 10V | 3V @ 250μA | 62A Tc | 19nC @ 4.5V | 12.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| ZVN4206GVTC | Diodes Incorporated | $3.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn4206gvta-datasheets-2188.pdf | 60V | 1A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 7.994566mg | EAR99 | FAST SWITCHING | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1 | 40 | 2W | 1 | Not Qualified | R-PDSO-G4 | 8 ns | 12ns | 15 ns | 12 ns | 1A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 2W Ta | 1A | 8A | 1Ohm | 60V | N-Channel | 100pF @ 25V | 1 Ω @ 1.5A, 10V | 3V @ 1mA | 1A Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FCPF20N60T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/onsemiconductor-fcp20n60-datasheets-4162.pdf | 600V | 20A | TO-220-3 Full Pack | Lead Free | 3 | 2.27g | 3 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 39W | 1 | 62 ns | 140ns | 65 ns | 230 ns | 20A | 30V | SILICON | ISOLATED | SWITCHING | 39W Tc | TO-220AB | 60A | 690 mJ | 600V | N-Channel | 3080pF @ 25V | 190m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRL3714ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | /files/infineontechnologies-irl3714zspbf-datasheets-8490.pdf | 20V | 36A | TO-220-3 | 10.54mm | 8.77mm | 4.69mm | Lead Free | No SVHC | 3 | No | 35W | TO-220AB | 550pF | 6 ns | 13ns | 5 ns | 10 ns | 36A | 20V | 20V | 2.1V | 35W Tc | 26mOhm | 20V | N-Channel | 550pF @ 10V | 16mOhm @ 15A, 10V | 2.55V @ 250μA | 36A Tc | 7.2nC @ 4.5V | 16 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFI624GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfi624g-datasheets-8546.pdf | TO-220-3 Full Pack, Isolated Tab | 9.8mm | Lead Free | 1.1Ohm | 3 | Single | 30W | TO-220-3 | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 3.4A | 20V | 250V | 30W Tc | 1.1Ohm | N-Channel | 260pF @ 25V | 1.1Ohm @ 2A, 10V | 4V @ 250μA | 3.4A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN0124ZSTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 240V | 160mA | E-Line-3 | Lead Free | 453.59237mg | 700mW | 1 | 700mW | E-Line (TO-92 compatible) | 85pF | 160mA | 20V | 240V | 16Ohm | 240V | N-Channel | 85pF @ 25V | 16Ohm @ 250mA, 10V | 3V @ 1mA | 160mA Ta | 16 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3708SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf3708pbf-datasheets-1914.pdf | 30V | 62A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | No SVHC | 12MOhm | 3 | No | 87W | 1 | 7.2 ns | 50ns | 3.7 ns | 17.6 ns | 62A | 12V | 2V | 87W Tc | 30V | N-Channel | 2417pF @ 15V | 2 V | 12m Ω @ 15A, 10V | 2V @ 250μA | 62A Tc | 24nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3704SPBF | Infineon Technologies | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3704pbf-datasheets-8551.pdf | 20V | 77A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | No | 90W | D2PAK | 1.996nF | 8.4 ns | 98ns | 5 ns | 12 ns | 77A | 20V | 20V | 87W Tc | 13.5mOhm | 20V | N-Channel | 1996pF @ 10V | 9mOhm @ 15A, 10V | 3V @ 250μA | 77A Tc | 19nC @ 4.5V | 9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI620GPBF | Vishay Siliconix | $7.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli620gpbf-datasheets-8644.pdf | TO-220-3 Full Pack, Isolated Tab | Unknown | 3 | No | Single | 30W | 1 | TO-220-3 | 360pF | 4.2 ns | 31ns | 17 ns | 18 ns | 4A | 10V | 200V | 2V | 30W Tc | 800mOhm | 200V | N-Channel | 360pF @ 25V | 800mOhm @ 2.4A, 5V | 2V @ 250μA | 4A Tc | 16nC @ 10V | 800 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3706LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3706pbf-datasheets-8476.pdf | 20V | 77A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 8.5MOhm | Single | 88W | TO-262 | 2.41nF | 87ns | 4.8 ns | 17 ns | 77A | 12V | 20V | 88W Tc | 10.5mOhm | 20V | N-Channel | 2410pF @ 10V | 8.5mOhm @ 15A, 10V | 2V @ 250μA | 77A Tc | 35nC @ 4.5V | 8.5 mΩ | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3709ZCLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 30V | 79W Tc | N-Channel | 2130pF @ 15V | 6.3mOhm @ 21A, 10V | 2.25V @ 250μA | 87A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3709ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf3709zlpbf-datasheets-8516.pdf | 30V | 87A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | No SVHC | 6.3MOhm | 3 | No | Single | 79mW | 1 | D2PAK | 2.13nF | 13 ns | 41ns | 4.7 ns | 16 ns | 87A | 20V | 30V | 2.25V | 79W Tc | 24 ns | 6.3mOhm | 30V | N-Channel | 2130pF @ 15V | 2.25 V | 6.3mOhm @ 21A, 10V | 2.25V @ 250μA | 87A Tc | 26nC @ 4.5V | 6.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| ZVN3310ASTOA | Diodes Incorporated | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn3310a-datasheets-8837.pdf | 100V | 200mA | E-Line-3 | Lead Free | 3 | 453.59237mg | EAR99 | unknown | e3 | MATTE TIN | WIRE | 260 | 3 | 1 | Single | 40 | 625mW | 1 | Not Qualified | R-PSIP-W3 | 5 ns | 7ns | 7 ns | 6 ns | 200mA | 20V | SILICON | SWITCHING | 625mW Ta | 0.2A | 100V | N-Channel | 40pF @ 25V | 10 Ω @ 500mA, 10V | 2.4V @ 1mA | 200mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRL8113PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl8113pbf-datasheets-8524.pdf | 30V | 105A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Contains Lead, Lead Free | 3 | 15 Weeks | No SVHC | 6MOhm | 3 | EAR99 | Tin | No | Single | 110W | 1 | FET General Purpose Power | 14 ns | 38ns | 5 ns | 18 ns | 105A | 20V | 30V | SILICON | DRAIN | SWITCHING | 2.25V | 110W Tc | TO-220AB | 27 ns | 42A | 420A | 220 mJ | 30V | N-Channel | 2840pF @ 15V | 2.25 V | 6m Ω @ 21A, 10V | 2.25V @ 250μA | 105A Tc | 35nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFZ34EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/infineontechnologies-irfz34epbf-datasheets-8534.pdf | 60V | 28A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Lead Free | No SVHC | 42mOhm | 3 | 2.54mm | EAR99 | Single | 68W | 5.1 ns | 30ns | 30 ns | 5.1 ns | 28A | 20V | 60V | 4V | 68W Tc | 60V | N-Channel | 680pF @ 25V | 4 V | 42m Ω @ 17A, 10V | 4V @ 250μA | 28A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDB6021P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdb6021p-datasheets-8537.pdf | -20V | -28A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | Single | 37W | 1 | TO-263AB | 1.89nF | 10ns | 50 ns | 80 ns | -28A | 8V | 20V | 37W Tc | 30mOhm | -20V | P-Channel | 1890pF @ 10V | 30mOhm @ 14A, 4.5V | 1.5V @ 250μA | 28A Ta | 28nC @ 4.5V | 30 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3707ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf3707zspbf-datasheets-8539.pdf | 30V | 59A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.652mm | Lead Free | 2 | No SVHC | 12.5MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 57W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.8 ns | 41ns | 3.6 ns | 12 ns | 59A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.8V | 57W Tc | 59 ns | 42A | 40 mJ | 30V | N-Channel | 1210pF @ 15V | 1.8 V | 9.5m Ω @ 21A, 10V | 2.25V @ 25μA | 59A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRF3704PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3704pbf-datasheets-8551.pdf | 20V | 77A | TO-220-3 | 8.77mm | Lead Free | No SVHC | 3 | 87W | 1 | TO-220AB | 1.996nF | 8.4 ns | 98ns | 12 ns | 77A | 20V | 20V | 20V | 3V | 87W Tc | 13.5mOhm | 20V | N-Channel | 1996pF @ 10V | 3 V | 9mOhm @ 15A, 10V | 3V @ 250μA | 77A Tc | 19nC @ 4.5V | 9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF3709LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3709pbf-datasheets-7962.pdf | 30V | 90A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | Single | 120W | TO-262 | 2.672nF | 171ns | 9.2 ns | 21 ns | 90A | 20V | 30V | 3.1W Ta 120W Tc | 10.5mOhm | 30V | N-Channel | 2672pF @ 16V | 9mOhm @ 15A, 10V | 3V @ 250μA | 90A Tc | 41nC @ 5V | 9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL8113SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irl8113pbf-datasheets-8524.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 110W Tc | 42A | 420A | 0.006Ohm | 220 mJ | N-Channel | 2840pF @ 15V | 6m Ω @ 21A, 10V | 2.25V @ 250μA | 105A Tc | 35nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRLIZ24NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irliz24npbf-datasheets-8572.pdf | 55V | 14A | TO-220-3 Full Pack | 10.6172mm | 16.12mm | 4.826mm | Lead Free | No SVHC | 3 | EAR99 | No | Single | 26W | 1 | 2kV | 7.1 ns | 74ns | 20 ns | 14A | 16V | 55V | 2V | 26W Tc | 55V | N-Channel | 480pF @ 25V | 2 V | 60m Ω @ 8.4A, 10V | 2V @ 250μA | 14A Tc | 15nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF3711SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3711pbf-datasheets-8504.pdf | 20V | 110A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | No SVHC | 6MOhm | 3 | EAR99 | No | 120W | 1 | 12 ns | 220ns | 12 ns | 17 ns | 110A | 20V | 3V | 3.1W Ta 120W Tc | 20V | N-Channel | 2980pF @ 10V | 6m Ω @ 15A, 10V | 3V @ 250μA | 110A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AUXCLFZ24NSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfz24nstrrpbf-datasheets-7326.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 3.8W Ta 45W Tc | N-Channel | 370pF @ 25V | 70mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN2110ASTOB | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn2110astz-datasheets-5399.pdf | 100V | 230mA | E-Line-3 | Lead Free | 3 | 453.59237mg | EAR99 | unknown | e3 | MATTE TIN | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | Not Qualified | R-PSIP-W3 | 7 ns | 8ns | 8 ns | 13 ns | 320mA | 20V | SILICON | SWITCHING | 700mW Ta | 0.32A | 4Ohm | 100V | N-Channel | 75pF @ 25V | 4 Ω @ 1A, 10V | 2.4V @ 1mA | 320mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF3707ZCLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3707zclpbf-datasheets-8590.pdf | 30V | 59A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 57W | 1 | TO-262 | 1.21nF | 41ns | 59A | 20V | 30V | 57W Tc | 12.5mOhm | 30V | N-Channel | 1210pF @ 15V | 9.5mOhm @ 21A, 10V | 2.25V @ 25μA | 59A Tc | 15nC @ 4.5V | 9.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3711LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3711pbf-datasheets-8504.pdf | 20V | 110A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | No | 120W | 12 ns | 220ns | 12 ns | 17 ns | 110A | 20V | 3.1W Ta 120W Tc | 20V | N-Channel | 2980pF @ 10V | 6m Ω @ 15A, 10V | 3V @ 250μA | 110A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3202PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irl3202pbf-datasheets-8600.pdf | 20V | 48A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | No SVHC | 3 | Single | 69W | TO-220AB | 2nF | 8.5 ns | 100ns | 82 ns | 12 ns | 48A | 10V | 20V | 69W Tc | 100 ns | 19mOhm | 20V | N-Channel | 2000pF @ 15V | 700 mV | 16mOhm @ 29A, 7V | 700mV @ 250μA | 48A Tc | 43nC @ 4.5V | 16 mΩ | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF3707ZCSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3707zclpbf-datasheets-8590.pdf | 30V | 59A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12.5MOhm | 3 | Single | 57W | 1 | D2PAK | 1.21nF | 41ns | 3.6 ns | 12 ns | 59A | 20V | 30V | 57W Tc | 12.5mOhm | 30V | N-Channel | 1210pF @ 15V | 9.5mOhm @ 21A, 10V | 2.25V @ 25μA | 59A Tc | 15nC @ 4.5V | 9.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ24NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irfz24nstrrpbf-datasheets-7326.pdf | 55V | 17A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | EAR99 | 45W | 1 | 34ns | 17A | 20V | 3.8W Ta 45W Tc | 55V | N-Channel | 370pF @ 25V | 70m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL520NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | /files/infineontechnologies-irl520nstrlpbf-datasheets-9993.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | 100V | 3.8W Ta 48W Tc | N-Channel | 440pF @ 25V | 180m Ω @ 6A, 10V | 2V @ 250μA | 10A Tc | 20nC @ 5V | 4V 10V | ±16V |
