Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFS33N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irfs33n15dpbf-datasheets-8950.pdf | 150V | 33A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Lead Free | 56mOhm | 3 | No | Single | 3.8W | 1 | 13 ns | 38ns | 21 ns | 23 ns | 33A | 30V | 3.8W Ta 170W Tc | 150V | N-Channel | 2020pF @ 25V | 56m Ω @ 20A, 10V | 5.5V @ 250μA | 33A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF744PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf744-datasheets-8234.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | 1 | Single | TO-220AB | 1.4nF | 8.7 ns | 28ns | 27 ns | 58 ns | 8.8A | 20V | 450V | 125W Tc | 630mOhm | 450V | N-Channel | 1400pF @ 25V | 630mOhm @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 80nC @ 10V | 630 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRCZ34PBF | Vishay Siliconix | $1.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-ircz34pbf-datasheets-8962.pdf | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | 3.000003g | 1 | TO-220-5 | 1.3nF | 13 ns | 100ns | 52 ns | 29 ns | 30A | 20V | 60V | 88W Tc | 50mOhm | 60V | N-Channel | 1300pF @ 25V | 50mOhm @ 18A, 10V | 4V @ 250μA | 30A Tc | 46nC @ 10V | Current Sensing | 50 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z34NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/infineontechnologies-irf9z34nstrlpbf-datasheets-7808.pdf | -55V | -19A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.826mm | Lead Free | 3 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 68W | 1 | Other Transistors | 13 ns | 55ns | 41 ns | 30 ns | -19A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | -4V | 3.8W Ta 68W Tc | 68A | 0.1Ohm | 180 mJ | -55V | P-Channel | 620pF @ 25V | -4 V | 100m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRL1104SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl1104spbf-datasheets-8973.pdf | 40V | 104A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | No SVHC | 3 | No | Single | 2.4W | D2PAK | 3.445nF | 18 ns | 257ns | 64 ns | 32 ns | 104A | 16V | 40V | 40V | 1V | 2.4W Ta 167W Tc | 126 ns | 12mOhm | 40V | N-Channel | 3445pF @ 25V | 1 V | 8mOhm @ 62A, 10V | 1V @ 250μA | 104A Tc | 68nC @ 4.5V | 8 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IRF9Z34NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf9z34nstrlpbf-datasheets-7808.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 68W Tc | 19A | 68A | 0.1Ohm | 180 mJ | P-Channel | 620pF @ 25V | 100m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLZ34NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlz34nstrlpbf-datasheets-7668.pdf | 55V | 30A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 35MOhm | 3 | No | 68W | 1 | TO-262 | 880pF | 8.9 ns | 100ns | 29 ns | 21 ns | 30A | 16V | 55V | 3.8W Ta 68W Tc | 60mOhm | 55V | N-Channel | 880pF @ 25V | 35mOhm @ 16A, 10V | 2V @ 250μA | 30A Tc | 25nC @ 5V | 35 mΩ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| ZVN1409ASTOB | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn1409astz-datasheets-8304.pdf | 90V | 10mA | E-Line-3 | Lead Free | 3 | EAR99 | unknown | 8541.29.00.95 | WIRE | 3 | Single | 625mW | 1 | Not Qualified | R-PSIP-W3 | 500ps | 500 ps | 350 ps | 10mA | 20V | SILICON | SWITCHING | 625mW Ta | 0.01A | 90V | N-Channel | 6.5pF @ 25V | 250 Ω @ 5mA, 10V | 2.4V @ 100μA | 10mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRL3402PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | /files/infineontechnologies-irl3402pbf-datasheets-8996.pdf | 20V | 85A | TO-220-3 | Lead Free | No SVHC | 10mOhm | 3 | 2.54mm | EAR99 | Single | 110W | 1 | 140ns | 120 ns | 80 ns | 85A | 10V | 20V | 700mV | 110W Tc | 20V | N-Channel | 3300pF @ 15V | 700 mV | 8m Ω @ 51A, 7V | 700mV @ 250μA | 85A Tc | 78nC @ 4.5V | 4.5V 7V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010EZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf1010ezpbf-datasheets-1778.pdf | 60V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | No SVHC | 8.5MOhm | 3 | No | Single | 140W | 1 | D2PAK | 2.81nF | 19 ns | 90ns | 54 ns | 38 ns | 75A | 20V | 60V | 60V | 4V | 140W Tc | 8.5mOhm | 60V | N-Channel | 2810pF @ 25V | 4 V | 8.5mOhm @ 51A, 10V | 4V @ 100μA | 75A Tc | 86nC @ 10V | 8.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRL1104LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl1104spbf-datasheets-8973.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 40V | 2.4W Ta 167W Tc | N-Channel | 3445pF @ 25V | 8m Ω @ 62A, 10V | 1V @ 250μA | 104A Tc | 68nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 64-2092PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3205zstrlpbf-datasheets-3665.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 55V | 170W Tc | N-Channel | 3450pF @ 25V | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRCZ44PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-ircz44pbf-datasheets-9024.pdf | 60V | 50A | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | Lead Free | 5 | 3.000003g | EAR99 | unknown | SINGLE | 260 | 5 | 1 | 40 | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T5 | 19 ns | 120ns | 86 ns | 55 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150W Tc | 0.028Ohm | 30 mJ | 60V | N-Channel | 2500pF @ 25V | 28m Ω @ 31A, 10V | 4V @ 250μA | 50A Tc | 95nC @ 10V | Current Sensing | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRL3303SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3303spbf-datasheets-8940.pdf | 30V | 38A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 3 | No | Single | 68W | D2PAK | 870pF | 7.4 ns | 200ns | 36 ns | 14 ns | 38A | 16V | 30V | 3.8W Ta 68W Tc | 40mOhm | 30V | N-Channel | 870pF @ 25V | 26mOhm @ 20A, 10V | 1V @ 250μA | 38A Tc | 26nC @ 4.5V | 26 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF540NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf540nstrlpbf-datasheets-8721.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 130W Tc | 33A | 110A | 0.044Ohm | 185 mJ | N-Channel | 1960pF @ 25V | 44m Ω @ 16A, 10V | 4V @ 250μA | 33A Tc | 71nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL7833SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl7833pbf-datasheets-2940.pdf | 30V | 150A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 5.084mm | 9.65mm | Lead Free | No SVHC | 3.8MOhm | 3 | EAR99 | No | 1 | Single | 140W | 175°C | 18 ns | 50ns | 6.9 ns | 21 ns | 150A | 20V | 1.4V | 140W Tc | 63 ns | 30V | N-Channel | 4170pF @ 15V | 2.3 V | 3.8m Ω @ 38A, 10V | 2.3V @ 250μA | 150A Tc | 47nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF5305SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irf5305strrpbf-datasheets-1721.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 110W Tc | TO-252 | 31A | 110A | 0.06Ohm | 280 mJ | P-Channel | 1200pF @ 25V | 60m Ω @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFS17N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-irfs17n20dpbf-datasheets-6744.pdf | 200V | 16A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.69mm | 10.54mm | Lead Free | No SVHC | 3 | Single | 140W | 1 | D2PAK | 1.1nF | 11 ns | 19ns | 6.6 ns | 18 ns | 16A | 30V | 200V | 200V | 3.8W Ta 140W Tc | 170mOhm | 200V | N-Channel | 1100pF @ 25V | 5.5 V | 170mOhm @ 9.8A, 10V | 5.5V @ 250μA | 16A Tc | 50nC @ 10V | 170 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRL540NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irl540nstrlpbf-datasheets-4114.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 7 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 140W Tc | 36A | 120A | 0.053Ohm | 310 mJ | N-Channel | 1800pF @ 25V | 44m Ω @ 18A, 10V | 2V @ 250μA | 36A Tc | 74nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IRF2807ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf2807zpbf-datasheets-8787.pdf | 75V | 75A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 9.4MOhm | 3 | No | 170W | 1 | 18 ns | 79ns | 45 ns | 40 ns | 75A | 20V | 170W Tc | 75V | N-Channel | 3270pF @ 25V | 9.4m Ω @ 53A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ46NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfz46nstrlpbf-datasheets-3189.pdf | 55V | 53A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.652mm | Lead Free | 2 | No SVHC | 16.5mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 120W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 76ns | 57 ns | 52 ns | 53A | 20V | 55V | DRAIN | SWITCHING | 4V | 3.8W Ta 107W Tc | 55V | N-Channel | 1696pF @ 25V | 4 V | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 53A Tc | 72nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| BS170FTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-bs170fta-datasheets-4589.pdf | 60V | 150mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 7.994566mg | No SVHC | EAR99 | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1 | Single | 40 | 330mW | 1 | Not Qualified | R-PDSO-G3 | 10 ns | 10 ns | 150mA | 20V | SILICON | 330mW Ta | 5Ohm | 60V | N-Channel | 60pF @ 10V | 5 Ω @ 200mA, 10V | 3V @ 1mA | 150μA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF3315LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-262-3 Long Leads, I2Pak, TO-262AA | 150V | 3.8W Ta 94W Tc | N-Channel | 1300pF @ 25V | 82m Ω @ 12A, 10V | 4V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9530NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf9530nstrrpbf-datasheets-0029.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | EAR99 | not_compliant | 100V | 3.8W Ta 79W Tc | P-Channel | 760pF @ 25V | 200m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL540NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl540nstrlpbf-datasheets-4114.pdf | 100V | 36A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | No SVHC | 3 | EAR99 | 140W | 1 | 81ns | 36A | 16V | 3.8W Ta 140W Tc | 100V | N-Channel | 1800pF @ 25V | 2 V | 44m Ω @ 18A, 10V | 2V @ 250μA | 36A Tc | 74nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB9N30APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb9n30apbf-datasheets-8916.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | 1 | Single | 96W | 1 | TO-220AB | 920pF | 10 ns | 25ns | 29 ns | 35 ns | 9.3A | 30V | 300V | 96W Tc | 450mOhm | 300V | N-Channel | 920pF @ 25V | 450mOhm @ 5.6A, 10V | 4V @ 250μA | 9.3A Tc | 33nC @ 10V | 450 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF3315SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | 150V | 21A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 84W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.6 ns | 32ns | 38 ns | 49 ns | 21A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 94W Tc | 84A | 0.082Ohm | 150V | N-Channel | 1300pF @ 25V | 4 V | 82m Ω @ 12A, 10V | 4V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRFZ44NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfz44nlpbf-datasheets-1585.pdf&product=infineontechnologies-irfz44nspbf-6858970 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 94W Tc | 49A | 160A | 0.0175Ohm | 150 mJ | N-Channel | 1470pF @ 25V | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 49A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL5602SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl5602spbf-datasheets-8829.pdf | -20V | -24A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | No SVHC | 3 | Single | 75W | 1 | D2PAK | 1.46nF | 9.7 ns | 73ns | 84 ns | 53 ns | -24A | 8V | -20V | 20V | -1V | 75W Tc | 42mOhm | -20V | P-Channel | 1460pF @ 15V | -1 V | 42mOhm @ 12A, 4.5V | 1V @ 250μA | 24A Tc | 44nC @ 4.5V | 42 mΩ | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| IRCZ24PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-ircz24pbf-datasheets-8834.pdf | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | 3.000003g | 1 | TO-220-5 | 720pF | 12 ns | 59ns | 38 ns | 25 ns | 17A | 20V | 55V | 60W Tc | 100mOhm | N-Channel | 720pF @ 25V | 100mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 24nC @ 10V | Current Sensing | 100 mΩ | 10V | ±20V |
