Single MOSFETs Transistors(33658)

Name	Manufacturer	Pricing(USD)	Quantity	Size(LxWxH)	Part Status	Series	Mount	Mounting Type	Operating Temperature	Packaging	Moisture Sensitivity Level (MSL)	Termination	Max Operating Temperature	Min Operating Temperature	Technology	Operating Mode	RoHS Status	Published	Datasheet	Voltage - Rated DC	Current Rating	Package / Case	Length	Height	Width	Lead Free	Number of Terminations	Factory Lead Time	Weight	REACH SVHC	Resistance	Number of Pins	Lead Pitch	ECCN Code	Additional Feature	Radiation Hardening	Reach Compliance Code	HTS Code	JESD-609 Code	Terminal Finish	Surface Mount	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Pin Count	Number of Channels	Element Configuration	Time@Peak Reflow Temperature-Max (s)	Power Dissipation	Number of Elements	Subcategory	Qualification Status	Max Junction Temperature (Tj)	JESD-30 Code	Supplier Device Package	Input Capacitance	Turn On Delay Time	Rise Time	Fall Time (Typ)	Turn-Off Delay Time	Continuous Drain Current (ID)	Gate to Source Voltage (Vgs)	Dual Supply Voltage	Transistor Element Material	Configuration	Case Connection	Transistor Application	Drain to Source Voltage (Vdss)	DS Breakdown Voltage-Min	Threshold Voltage	Power Dissipation-Max	JEDEC-95 Code	Recovery Time	Drain Current-Max (Abs) (ID)	Pulsed Drain Current-Max (IDM)	Drain-source On Resistance-Max	Drain to Source Resistance	Avalanche Energy Rating (Eas)	Drain to Source Breakdown Voltage	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Nominal Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Rds On Max	Drive Voltage (Max Rds On,Min Rds On)	Vgs (Max)
IRLZ34NLPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Through Hole	Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)		175°C	-55°C	MOSFET (Metal Oxide)		RoHS Compliant	1997	https://pdf.utmel.com/r/datasheets/infineontechnologies-irlz34nstrlpbf-datasheets-7668.pdf	55V	30A	TO-262-3 Long Leads, I2Pak, TO-262AA	10.668mm	9.65mm	4.826mm	Lead Free					35MOhm	3				No													68W	1					TO-262	880pF	8.9 ns	100ns	29 ns	21 ns	30A	16V						55V			3.8W Ta 68W Tc						60mOhm		55V	N-Channel	880pF @ 25V		35mOhm @ 16A, 10V	2V @ 250μA	30A Tc	25nC @ 5V		35 mΩ	4V 10V	±16V
ZVN1409ASTOB	Diodes Incorporated		RFQ Min: 1 Mult: 1	0x0x0	download		Through Hole	Through Hole	-55°C~150°C TJ	Tape & Reel (TR)	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	RoHS Compliant	2012	https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn1409astz-datasheets-8304.pdf	90V	10mA	E-Line-3				Lead Free	3							EAR99			unknown	8541.29.00.95					WIRE		3		Single		625mW	1		Not Qualified		R-PSIP-W3				500ps	500 ps	350 ps	10mA	20V		SILICON			SWITCHING				625mW Ta			0.01A					90V	N-Channel	6.5pF @ 25V		250 Ω @ 5mA, 10V	2.4V @ 100μA	10mA Ta				10V	±20V
IRL3402PBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)	Through Hole			MOSFET (Metal Oxide)		RoHS Compliant	1997	/files/infineontechnologies-irl3402pbf-datasheets-8996.pdf	20V	85A	TO-220-3				Lead Free				No SVHC	10mOhm	3	2.54mm	EAR99													Single		110W	1								140ns	120 ns	80 ns	85A	10V	20V							700mV	110W Tc								20V	N-Channel	3300pF @ 15V	700 mV	8m Ω @ 51A, 7V	700mV @ 250μA	85A Tc	78nC @ 4.5V			4.5V 7V	±10V
IRF1010EZSPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Surface Mount	Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)		175°C	-55°C	MOSFET (Metal Oxide)		ROHS3 Compliant	2004	/files/infineontechnologies-irf1010ezpbf-datasheets-1778.pdf	60V	75A	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	10.668mm	4.826mm	9.65mm	Lead Free				No SVHC	8.5MOhm	3				No											Single		140W	1					D2PAK	2.81nF	19 ns	90ns	54 ns	38 ns	75A	20V	60V					60V		4V	140W Tc						8.5mOhm		60V	N-Channel	2810pF @ 25V	4 V	8.5mOhm @ 51A, 10V	4V @ 100μA	75A Tc	86nC @ 10V		8.5 mΩ	10V	±20V
IRL1104LPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)			2004	https://pdf.utmel.com/r/datasheets/infineontechnologies-irl1104spbf-datasheets-8973.pdf			TO-262-3 Long Leads, I2Pak, TO-262AA																																														40V			2.4W Ta 167W Tc									N-Channel	3445pF @ 25V		8m Ω @ 62A, 10V	1V @ 250μA	104A Tc	68nC @ 4.5V			4.5V 10V	±16V
64-2092PBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)			2010	https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3205zstrlpbf-datasheets-3665.pdf			TO-263-3, D2Pak (2 Leads + Tab), TO-263AB																																														55V			170W Tc									N-Channel	3450pF @ 25V		6.5m Ω @ 66A, 10V	4V @ 250μA	75A Tc	110nC @ 10V			10V	±20V
IRCZ44PBF	Vishay Siliconix		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Through Hole	Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	1997	https://pdf.utmel.com/r/datasheets/vishaysiliconix-ircz44pbf-datasheets-9024.pdf	60V	50A	TO-220-5	10.67mm	9.02mm	4.83mm	Lead Free	5		3.000003g					EAR99			unknown					SINGLE		260	5	1		40	150W	1	FET General Purpose Power	Not Qualified		R-PSFM-T5			19 ns	120ns	86 ns	55 ns	50A	20V		SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING				150W Tc					0.028Ohm		30 mJ	60V	N-Channel	2500pF @ 25V		28m Ω @ 31A, 10V	4V @ 250μA	50A Tc	95nC @ 10V	Current Sensing		10V	±20V
IRFB4215PBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Through Hole	Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)		175°C	-55°C	MOSFET (Metal Oxide)		RoHS Compliant	2010	/files/infineontechnologies-irfb4215pbf-datasheets-8945.pdf	60V	115A	TO-220-3				Lead Free				No SVHC	9Ohm	3				No											Single		270W	1					TO-220AB	4.08nF		160ns	110 ns	77 ns	115A	20V	60V					60V			270W Tc						9mOhm		60V	N-Channel	4080pF @ 25V	4 V	9mOhm @ 54A, 10V	4V @ 250μA	115A Tc	170nC @ 10V		9 mΩ	10V	±20V
IRC530PBF	Vishay Siliconix		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Through Hole	Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)		ROHS3 Compliant	2005	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc530pbf-datasheets-8948.pdf	100V	14A	TO-220-5				Lead Free																							88W	1											14A	20V									88W Tc									N-Channel	700pF @ 25V		160m Ω @ 8.4A, 10V	4V @ 250μA	14A Tc	26nC @ 10V	Current Sensing		10V	±20V
IRFS33N15DPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Surface Mount	Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)		RoHS Compliant	2004	/files/infineontechnologies-irfs33n15dpbf-datasheets-8950.pdf	150V	33A	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	10.668mm	4.699mm	9.65mm	Lead Free					56mOhm	3				No											Single		3.8W	1							13 ns	38ns	21 ns	23 ns	33A	30V									3.8W Ta 170W Tc								150V	N-Channel	2020pF @ 25V		56m Ω @ 20A, 10V	5.5V @ 250μA	33A Tc	90nC @ 10V			10V	±30V
IRF744PBF	Vishay Siliconix		RFQ Min: 1 Mult: 1	0x0x0	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)		150°C	-55°C	MOSFET (Metal Oxide)		ROHS3 Compliant	2009	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf744-datasheets-8234.pdf			TO-220-3	10.41mm	9.01mm	4.7mm				6.000006g			3														1	Single								TO-220AB	1.4nF	8.7 ns	28ns	27 ns	58 ns	8.8A	20V						450V			125W Tc						630mOhm		450V	N-Channel	1400pF @ 25V		630mOhm @ 5.3A, 10V	4V @ 250μA	8.8A Tc	80nC @ 10V		630 mΩ	10V	±20V
IRCZ34PBF	Vishay Siliconix	$1.59	RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Through Hole	Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)		175°C	-55°C	MOSFET (Metal Oxide)		ROHS3 Compliant	1997	https://pdf.utmel.com/r/datasheets/vishaysiliconix-ircz34pbf-datasheets-8962.pdf			TO-220-5	10.67mm	9.02mm	4.83mm				3.000003g																	1									TO-220-5	1.3nF	13 ns	100ns	52 ns	29 ns	30A	20V						60V			88W Tc						50mOhm		60V	N-Channel	1300pF @ 25V		50mOhm @ 18A, 10V	4V @ 250μA	30A Tc	46nC @ 10V	Current Sensing	50 mΩ	10V	±20V
IRF9Z34NLPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Through Hole	Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	RoHS Compliant	1997	/files/infineontechnologies-irf9z34nstrlpbf-datasheets-7808.pdf	-55V	-19A	TO-262-3 Long Leads, I2Pak, TO-262AA	10.67mm	9.65mm	4.826mm	Lead Free	3			No SVHC		3		EAR99	AVALANCHE RATED, HIGH RELIABILITY	No			e3	Matte Tin (Sn) - with Nickel (Ni) barrier		SINGLE		260				30	68W	1	Other Transistors						13 ns	55ns	41 ns	30 ns	-19A	20V		SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	55V		-4V	3.8W Ta 68W Tc				68A	0.1Ohm		180 mJ	-55V	P-Channel	620pF @ 25V	-4 V	100m Ω @ 10A, 10V	4V @ 250μA	19A Tc	35nC @ 10V			10V	±20V
IRF2807ZLPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Through Hole	Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)		RoHS Compliant	2004	/files/infineontechnologies-irf2807zpbf-datasheets-8787.pdf	75V	75A	TO-262-3 Long Leads, I2Pak, TO-262AA	10.668mm	9.65mm	4.826mm	Lead Free					9.4MOhm	3				No													170W	1							18 ns	79ns	45 ns	40 ns	75A	20V									170W Tc								75V	N-Channel	3270pF @ 25V		9.4m Ω @ 53A, 10V	4V @ 250μA	75A Tc	110nC @ 10V			10V	±20V
IRFZ46NSPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Surface Mount	Surface Mount		Tube	1 (Unlimited)		175°C	-55°C	MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2004	/files/infineontechnologies-irfz46nstrlpbf-datasheets-3189.pdf	55V	53A	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	10.668mm	4.826mm	9.652mm	Lead Free	2			No SVHC	16.5mOhm	3		EAR99	AVALANCHE RATED, HIGH RELIABILITY	No			e3	Matte Tin (Sn) - with Nickel (Ni) barrier			GULL WING	260			Single	30	120W	1	FET General Purpose Power			R-PSSO-G2			14 ns	76ns	57 ns	52 ns	53A	20V	55V			DRAIN	SWITCHING			4V	3.8W Ta 107W Tc								55V	N-Channel	1696pF @ 25V	4 V	16.5m Ω @ 28A, 10V	4V @ 250μA	53A Tc	72nC @ 10V			10V	±20V
BS170FTC	Diodes Incorporated		RFQ Min: 1 Mult: 1	0x0x0	download		Surface Mount	Surface Mount	-55°C~150°C TJ	Tape & Reel (TR)	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	RoHS Compliant		https://pdf.utmel.com/r/datasheets/diodesincorporated-bs170fta-datasheets-4589.pdf	60V	150mA	TO-236-3, SC-59, SOT-23-3	2.9mm	1mm	1.3mm	Lead Free	3		7.994566mg	No SVHC				EAR99			unknown		e3	MATTE TIN		DUAL	GULL WING	260		1	Single	40	330mW	1		Not Qualified		R-PDSO-G3			10 ns			10 ns	150mA	20V		SILICON							330mW Ta					5Ohm			60V	N-Channel	60pF @ 10V		5 Ω @ 200mA, 10V	3V @ 1mA	150μA Ta				10V	±20V
IRF3315LPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)			2004				TO-262-3 Long Leads, I2Pak, TO-262AA																																														150V			3.8W Ta 94W Tc									N-Channel	1300pF @ 25V		82m Ω @ 12A, 10V	4V @ 250μA	21A Tc	95nC @ 10V			10V	±20V
IRF9530NSPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)		ROHS3 Compliant	1998	/files/infineontechnologies-irf9530nstrrpbf-datasheets-0029.pdf			TO-263-3, D2Pak (2 Leads + Tab), TO-263AB						14 Weeks						EAR99			not_compliant																															100V			3.8W Ta 79W Tc									P-Channel	760pF @ 25V		200m Ω @ 8.4A, 10V	4V @ 250μA	14A Tc	58nC @ 10V			10V	±20V
IRL540NLPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Through Hole	Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)		RoHS Compliant	2004	https://pdf.utmel.com/r/datasheets/infineontechnologies-irl540nstrlpbf-datasheets-4114.pdf	100V	36A	TO-262-3 Long Leads, I2Pak, TO-262AA				Lead Free				No SVHC		3		EAR99															140W	1								81ns			36A	16V									3.8W Ta 140W Tc								100V	N-Channel	1800pF @ 25V	2 V	44m Ω @ 18A, 10V	2V @ 250μA	36A Tc	74nC @ 5V			4V 10V	±16V
IRFB9N30APBF	Vishay Siliconix		RFQ Min: 1 Mult: 1	0x0x0	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)		150°C	-55°C	MOSFET (Metal Oxide)		ROHS3 Compliant	2009	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb9n30apbf-datasheets-8916.pdf			TO-220-3	10.41mm	9.01mm	4.7mm				6.000006g			3														1	Single		96W	1					TO-220AB	920pF	10 ns	25ns	29 ns	35 ns	9.3A	30V						300V			96W Tc						450mOhm		300V	N-Channel	920pF @ 25V		450mOhm @ 5.6A, 10V	4V @ 250μA	9.3A Tc	33nC @ 10V		450 mΩ	10V	±30V
IRF3315SPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Surface Mount	Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)	SMD/SMT			MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	1997		150V	21A	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	10.67mm	4.83mm	9.65mm	Lead Free	2			No SVHC		3		EAR99	AVALANCHE RATED	No			e3	Matte Tin (Sn) - with Nickel (Ni) barrier			GULL WING	260			Single	30	84W	1	FET General Purpose Power			R-PSSO-G2			9.6 ns	32ns	38 ns	49 ns	21A	20V	150V	SILICON		DRAIN	SWITCHING			4V	3.8W Ta 94W Tc				84A	0.082Ohm			150V	N-Channel	1300pF @ 25V	4 V	82m Ω @ 12A, 10V	4V @ 250μA	21A Tc	95nC @ 10V			10V	±20V
IRFZ44NSPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2001	/files/infineontechnologies-irfz44nlpbf-datasheets-1585.pdf&product=infineontechnologies-irfz44nspbf-6858970			TO-263-3, D2Pak (2 Leads + Tab), TO-263AB					2							EAR99	AVALANCHE RATED, HIGH RELIABILITY				e3	Matte Tin (Sn) - with Nickel (Ni) barrier	YES	SINGLE	GULL WING	260				30		1	FET General Purpose Power	Not Qualified		R-PSSO-G2										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	55V	55V		3.8W Ta 94W Tc			49A	160A	0.0175Ohm		150 mJ		N-Channel	1470pF @ 25V		17.5m Ω @ 25A, 10V	4V @ 250μA	49A Tc	63nC @ 10V			10V	±20V
IRL3303SPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Surface Mount	Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)		175°C	-55°C	MOSFET (Metal Oxide)		RoHS Compliant	2004	https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3303spbf-datasheets-8940.pdf	30V	38A	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	10.668mm	4.572mm	9.65mm	Lead Free						3				No											Single		68W						D2PAK	870pF	7.4 ns	200ns	36 ns	14 ns	38A	16V						30V			3.8W Ta 68W Tc						40mOhm		30V	N-Channel	870pF @ 25V		26mOhm @ 20A, 10V	1V @ 250μA	38A Tc	26nC @ 4.5V		26 mΩ	4.5V 10V	±16V
IRF540NSPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2004	/files/infineontechnologies-irf540nstrlpbf-datasheets-8721.pdf			TO-263-3, D2Pak (2 Leads + Tab), TO-263AB					2							EAR99	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE				e3	Matte Tin (Sn) - with Nickel (Ni) barrier	YES	SINGLE	GULL WING	260				30		1	FET General Purpose Power	Not Qualified		R-PSSO-G2										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	100V	100V		130W Tc			33A	110A	0.044Ohm		185 mJ		N-Channel	1960pF @ 25V		44m Ω @ 16A, 10V	4V @ 250μA	33A Tc	71nC @ 10V			10V	±20V
IRL7833SPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Surface Mount	Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)		ROHS3 Compliant	2004	/files/infineontechnologies-irl7833pbf-datasheets-2940.pdf	30V	150A	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	10.668mm	5.084mm	9.65mm	Lead Free				No SVHC	3.8MOhm	3		EAR99		No										1	Single		140W				175°C				18 ns	50ns	6.9 ns	21 ns	150A	20V								1.4V	140W Tc		63 ns						30V	N-Channel	4170pF @ 15V	2.3 V	3.8m Ω @ 38A, 10V	2.3V @ 250μA	150A Tc	47nC @ 4.5V			4.5V 10V	±20V
IRF5305SPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2000	/files/infineontechnologies-irf5305strrpbf-datasheets-1721.pdf			TO-263-3, D2Pak (2 Leads + Tab), TO-263AB					2							EAR99	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY				e3	Matte Tin (Sn) - with Nickel (Ni) barrier	YES	SINGLE	GULL WING	260				30		1	Other Transistors	Not Qualified		R-PSSO-G2										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	55V	55V		3.8W Ta 110W Tc	TO-252		31A	110A	0.06Ohm		280 mJ		P-Channel	1200pF @ 25V		60m Ω @ 16A, 10V	4V @ 250μA	31A Tc	63nC @ 10V			10V	±20V
IRFS17N20DPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Surface Mount	Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)		175°C	-55°C	MOSFET (Metal Oxide)		RoHS Compliant	2004	https://pdf.utmel.com/r/datasheets/infineon-irfs17n20dpbf-datasheets-6744.pdf	200V	16A	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB		4.69mm	10.54mm	Lead Free				No SVHC		3															Single		140W	1					D2PAK	1.1nF	11 ns	19ns	6.6 ns	18 ns	16A	30V	200V					200V			3.8W Ta 140W Tc						170mOhm		200V	N-Channel	1100pF @ 25V	5.5 V	170mOhm @ 9.8A, 10V	5.5V @ 250μA	16A Tc	50nC @ 10V		170 mΩ	10V	±30V
IRL540NSPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	1998	/files/infineontechnologies-irl540nstrlpbf-datasheets-4114.pdf			TO-263-3, D2Pak (2 Leads + Tab), TO-263AB					2	7 Weeks						EAR99	AVALANCHE RATED, HIGH RELIABILITY				e3	Matte Tin (Sn) - with Nickel (Ni) barrier	YES	SINGLE	GULL WING	260				30		1	FET General Purpose Power	Not Qualified		R-PSSO-G2										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	100V	100V		3.8W Ta 140W Tc			36A	120A	0.053Ohm		310 mJ		N-Channel	1800pF @ 25V		44m Ω @ 18A, 10V	2V @ 250μA	36A Tc	74nC @ 5V			4V 10V	±16V
FDS7088SN3	ON Semiconductor		RFQ Min: 1 Mult: 1	0x0x0	download	PowerTrench®	Surface Mount	Surface Mount	-55°C~150°C TJ	Tape & Reel (TR)	1 (Unlimited)		150°C	-55°C	MOSFET (Metal Oxide)		RoHS Compliant	2004	https://pdf.utmel.com/r/datasheets/onsemiconductor-fds7088sn3-datasheets-8782.pdf	30V	21A	8-SOIC (0.154, 3.90mm Width)				Lead Free						8																	3W	1					8-SO	3.23nF		21ns	33 ns	45 ns	21A	20V						30V			3W Ta						3.4mOhm		30V	N-Channel	3230pF @ 15V		4mOhm @ 21A, 10V	3V @ 1mA	21A Ta	80nC @ 10V		4 mΩ	4.5V 10V	±20V
IRL530NSPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2004	https://pdf.utmel.com/r/datasheets/infineontechnologies-irl530nstrlpbf-datasheets-7930.pdf			TO-263-3, D2Pak (2 Leads + Tab), TO-263AB					2							EAR99	AVALANCHE RATED, HIGH RELIABILITY				e3	Matte Tin (Sn) - with Nickel (Ni) barrier	YES	SINGLE	GULL WING	260				30		1	FET General Purpose Power	Not Qualified		R-PSSO-G2										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	100V	100V		3.8W Ta 79W Tc			17A	60A	0.12Ohm		150 mJ		N-Channel	800pF @ 25V		100m Ω @ 9A, 10V	2V @ 250μA	17A Tc	34nC @ 5V			4V 10V	±20V

Single MOSFETs Transistors(33658)

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